Measurement and modeling of silicon heterostructure devices:
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boca Raton, Fla. [u.a.]
CRC Press
2008
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Getr. Zählung |
| ISBN: | 9781420066920 1420066927 |
Internformat
MARC
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| 245 | 1 | 0 | |a Measurement and modeling of silicon heterostructure devices |c ed. by John D. Cressler |
| 264 | 1 | |a Boca Raton, Fla. [u.a.] |b CRC Press |c 2008 | |
| 300 | |a Getr. Zählung | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Bipolar transistors / Mathematical models | |
| 650 | 4 | |a Bipolar transistors | |
| 650 | 4 | |a Heterostructures | |
| 650 | 4 | |a Integrated circuits / Design and construction | |
| 700 | 1 | |a Cressler, John D. |d 1961- |0 (DE-588)140008055 |4 edt | |
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Datensatz im Suchindex
| _version_ | 1804138083148365824 |
|---|---|
| adam_text | Contents
1 The Big
Picture
............................................................................................................................1-І
John
D. Cressler
2
A Brief History of the Field
........................................................................................................2-1
John D. Cressler
3
Overview: Measurement and Modeling
.....................................................................................3-1
John D. Cressler
4
Best-Practice AC Measurement Techniques
...............................................................................4-1
Robert A. Groves
5
Industrial Application of TCAD for SiGe Development
..........................................................5-1
David C. Sheridan, Jeffrey B. Johnson, and Rajendran Krishnasamy
6
Compact Modeling of SiGe HBTs: HICUM
...............................................................................6-1
Michael
Schröter
7
Compact Modeling of SiGe HBTs: Mextram
.............................................................................7-1
Slobodan
Mijalković
8
CAD Tools and Design Kits
........................................................................................................8-1
Sue E.
Strang
9
Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs
....9-1
Raminderpal Singh
10
Transmission lines on Si
...........................................................................................................10-1
Youri
V. Tretiakov
11
Improved De-Embedding Techniques
......................................................................................11-1
Qingqing Liang
A.I Properties of Silicon and Germanium
...................................................................................
АЛ-І
John D. Cressler
A.2 The Generalized Moll-Ross Relations
....................................................................................
АЛ-І
John D. Cressler
A.3 Integral Charge-Control Relations
.........................................................................................
A.3-1
Michael
Schröter
A.4 Sample SiGe HBT Compact Model Parameters
.....................................................................
A.4-1
Ramana
M. Malladi
Index
.......................................................................................................................................................
II
|
| adam_txt |
Contents
1 The Big
Picture
.1-І
John
D. Cressler
2
A Brief History of the Field
.2-1
John D. Cressler
3
Overview: Measurement and Modeling
.3-1
John D. Cressler
4
Best-Practice AC Measurement Techniques
.4-1
Robert A. Groves
5
Industrial Application of TCAD for SiGe Development
.5-1
David C. Sheridan, Jeffrey B. Johnson, and Rajendran Krishnasamy
6
Compact Modeling of SiGe HBTs: HICUM
.6-1
Michael
Schröter
7
Compact Modeling of SiGe HBTs: Mextram
.7-1
Slobodan
Mijalković
8
CAD Tools and Design Kits
.8-1
Sue E.
Strang
9
Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs
.9-1
Raminderpal Singh
10
Transmission lines on Si
.10-1
Youri
V. Tretiakov
11
Improved De-Embedding Techniques
.11-1
Qingqing Liang
A.I Properties of Silicon and Germanium
.
АЛ-І
John D. Cressler
A.2 The Generalized Moll-Ross Relations
.
АЛ-І
John D. Cressler
A.3 Integral Charge-Control Relations
.
A.3-1
Michael
Schröter
A.4 Sample SiGe HBT Compact Model Parameters
.
A.4-1
Ramana
M. Malladi
Index
.
II |
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| index_date | 2024-07-02T22:17:22Z |
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| spelling | Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler Boca Raton, Fla. [u.a.] CRC Press 2008 Getr. Zählung txt rdacontent n rdamedia nc rdacarrier Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction Cressler, John D. 1961- (DE-588)140008055 edt Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016778511&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Measurement and modeling of silicon heterostructure devices Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction |
| title | Measurement and modeling of silicon heterostructure devices |
| title_auth | Measurement and modeling of silicon heterostructure devices |
| title_exact_search | Measurement and modeling of silicon heterostructure devices |
| title_exact_search_txtP | Measurement and modeling of silicon heterostructure devices |
| title_full | Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler |
| title_fullStr | Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler |
| title_full_unstemmed | Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler |
| title_short | Measurement and modeling of silicon heterostructure devices |
| title_sort | measurement and modeling of silicon heterostructure devices |
| topic | Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction |
| topic_facet | Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction |
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