Holdings: Measurement and modeling of silicon heterostructure devices

Measurement and modeling of silicon heterostructure devices:

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Bibliographic Details
Other Authors:	Cressler, John D. 1961- (Editor)
Format:	Book
Language:	English
Published:	Boca Raton, Fla. [u.a.] CRC Press 2008
Subjects:	Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction
Online Access:	Inhaltsverzeichnis
Physical Description:	Getr. Zählung
ISBN:	9781420066920 1420066927

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MARC


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Record in the Search Index

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adam_text	Contents 1 The Big Picture ............................................................................................................................1-І John D. Cressler 2 A Brief History of the Field ........................................................................................................2-1 John D. Cressler 3 Overview: Measurement and Modeling .....................................................................................3-1 John D. Cressler 4 Best-Practice AC Measurement Techniques ...............................................................................4-1 Robert A. Groves 5 Industrial Application of TCAD for SiGe Development ..........................................................5-1 David C. Sheridan, Jeffrey B. Johnson, and Rajendran Krishnasamy 6 Compact Modeling of SiGe HBTs: HICUM ...............................................................................6-1 Michael Schröter 7 Compact Modeling of SiGe HBTs: Mextram .............................................................................7-1 Slobodan Mijalković 8 CAD Tools and Design Kits ........................................................................................................8-1 Sue E. Strang 9 Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs ....9-1 Raminderpal Singh 10 Transmission lines on Si ...........................................................................................................10-1 Youri V. Tretiakov 11 Improved De-Embedding Techniques ......................................................................................11-1 Qingqing Liang A.I Properties of Silicon and Germanium ................................................................................... АЛ-І John D. Cressler A.2 The Generalized Moll-Ross Relations .................................................................................... АЛ-І John D. Cressler A.3 Integral Charge-Control Relations ......................................................................................... A.3-1 Michael Schröter A.4 Sample SiGe HBT Compact Model Parameters ..................................................................... A.4-1 Ramana M. Malladi Index ....................................................................................................................................................... II
adam_txt	Contents 1 The Big Picture .1-І John D. Cressler 2 A Brief History of the Field .2-1 John D. Cressler 3 Overview: Measurement and Modeling .3-1 John D. Cressler 4 Best-Practice AC Measurement Techniques .4-1 Robert A. Groves 5 Industrial Application of TCAD for SiGe Development .5-1 David C. Sheridan, Jeffrey B. Johnson, and Rajendran Krishnasamy 6 Compact Modeling of SiGe HBTs: HICUM .6-1 Michael Schröter 7 Compact Modeling of SiGe HBTs: Mextram .7-1 Slobodan Mijalković 8 CAD Tools and Design Kits .8-1 Sue E. Strang 9 Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs .9-1 Raminderpal Singh 10 Transmission lines on Si .10-1 Youri V. Tretiakov 11 Improved De-Embedding Techniques .11-1 Qingqing Liang A.I Properties of Silicon and Germanium . АЛ-І John D. Cressler A.2 The Generalized Moll-Ross Relations . АЛ-І John D. Cressler A.3 Integral Charge-Control Relations . A.3-1 Michael Schröter A.4 Sample SiGe HBT Compact Model Parameters . A.4-1 Ramana M. Malladi Index . II
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isbn	9781420066920 1420066927
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spelling	Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler Boca Raton, Fla. [u.a.] CRC Press 2008 Getr. Zählung txt rdacontent n rdamedia nc rdacarrier Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction Cressler, John D. 1961- (DE-588)140008055 edt Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016778511&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Measurement and modeling of silicon heterostructure devices Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction
title	Measurement and modeling of silicon heterostructure devices
title_auth	Measurement and modeling of silicon heterostructure devices
title_exact_search	Measurement and modeling of silicon heterostructure devices
title_exact_search_txtP	Measurement and modeling of silicon heterostructure devices
title_full	Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler
title_fullStr	Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler
title_full_unstemmed	Measurement and modeling of silicon heterostructure devices ed. by John D. Cressler
title_short	Measurement and modeling of silicon heterostructure devices
title_sort	measurement and modeling of silicon heterostructure devices
topic	Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction
topic_facet	Mathematisches Modell Bipolar transistors / Mathematical models Bipolar transistors Heterostructures Integrated circuits / Design and construction
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016778511&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
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