Electrochemistry of silicon: instrumentation, science, materials and applications
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2002
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| Schlagworte: | |
| Online-Zugang: | Table of contents Inhaltsverzeichnis |
| Beschreibung: | XI, 277 S. Ill., graph. Darst. |
| ISBN: | 3527293213 |
Internformat
MARC
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Datensatz im Suchindex
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| adam_text | VOLKER LEHMANN ELECTROCHEMISTRY OF SILICON INSTRUMENTATION, SCIENCE,
MATERIALS AND APPLICATIONS WILEY-VCH I- CONTENTS PREFACE VII 1
INTRODUCTION, SAFETY AND INSTRUMENTATION 1 1.1 EARLY STUDIES OF THE
ELECTROCHEMISTRY OF SILICON 1 1.2 SAFETY FIRST 3 1.3 THE BASIC
PROPERTIES OF SILICON 5 1.4 COMMON ELECTROLYTES 7 1.5 THE ELECTRODES 11
1.6 CELL DESIGNS 15 2 THE CHEMICAL DISSOLUTION OF SILICON 23 2.1 THE
BASICS OFWET PROCESSING OF SILICON 23 2.2 SILICON SURFACE CONDITIONS AND
CLEANING PROCEDURES 24 2.3 CHEMICAL ETCHING IN ALKALINE SOLUTIONS 27 2.4
CHEMICAL ETCHING IN ACIDIC SOLUTIONS 30 2.5 DEFECT AND JUNCTION
DELINEATION 33 2.6 SELECTIVE ETCHING OF COMMON THIN FILM MATERIALS 36 3
THE SEMICONDUCTOR-ELECTROLYTE JUNCTION 39 3.1 BASICS OF THE
SEMICONDUCTOR-ELECTROLYTE CONTACT 39 3.2 THE I-V CHARACTERISTICS OF
SILICON ELECTRODES IN ACIDIC ELECTROLYTES 42 3.3 THE I-V CHARACTERISTICS
OF SILICON ELECTRODES IN ALKALINE ELECTROLYTES 49 4 THE ELECTROCHEMICAL
DISSOLUTION OF SILICON 52 4.1 ELECTROCHEMICAL REACTIONS 51 4.2 THE
DISSOLUTION VALENCE 57 4.3 THE CHARACTERISTIC ANODIC CURRENTS IN HF 59
4.4 REVERSE CURRENTS, ELECTRON AND HOLE INJECTION 63 4.5 ELECTROCHEMICAL
ETCH STOPS 68 4.6 PHOTOELECTROCHEMICAL ETCHING 72 X I CONTENTS 5 ANODIC
OXIDATION 77 5.1 SILICON OXIDATION TECHNIQUES 77 5.2 NATIVE AND CHEMICAL
OXIDES 78 5.3 ANODIC OXIDE FORMATION AND IONIC TRANSPORT 79 5.4 OXIDE
MORPHOLOGY, CHEMICAL COMPOSITION AND ELECTRICAL PROPERTIES 82 5.5
ELECTROCHEMICAL OSCILLATIONS 89 5.6 ELECTROPOLISHING 94 6
ELECTROCHEMICAL PORE FORMATION 97 6.1 BASICS OF PORE FORMATION 97 6.2
POROUS SILICON FORMATION MODELS 99 6.3 PORE SIZE REGIMES AND PORE GROWTH
RATES 104 6.4 POROSITY, PORE DENSITY AND SPECIFIC SURFACE AREA 108 6.5
MECHANICAL PROPERTIES AND DRYING METHODS 114 6.6 CHEMICAL COMPOSITION
AND AGEING EFFECTS 117 6.7 ELECTRICAL PROPERTIES OF POROUS SILICON 120 7
MICROPOROUS SILICON 127 7.1 MICROPORE FORMATION MECHANISM 127 7.2
MORPHOLOGY OF MICROPOROUS SILICON 128 7.3 ABSORPTION, REFLECTION AND
NONLINEAR OPTICAL EFFECTS 133 7.4 LUMINESCENCE PROPERTIES 138 7.5
QUANTUM CONFINEMENT AND MODELS OF THE LUMINESCENCE PROCESS 150 7.6
OXIDIZED POROUS SILICON 159 7.7 RELATED MATERIALS 162 8 MESOPOROUS
SILICON 167 8.1 MESOPORE FORMATION MECHANISMS 167 8.2 MESOPORES IN
HIGHLY DOPED P-TYPE SILICON 171 8.3 MESOPORES IN HIGHLY DOPED N-TYPE
SILICON 274 8.4 MESOPORE FORMATION AND SPIKING IN LOW-DOPED N-TYPE
SILICON 177 8.5 ETCH PIT FORMATION BY AVALANCHE BREAKDOWN IN LOW-DOPED
N-TYPE SILICON 180 9 MACROPOROUS SILICON 183 9.1 MACROPORE FORMATION
MECHANISMS 183 9.2 MACROPORES IN P-TYPE SILICON 187 9.3 THE
PHENOMENOLOGY OF MACROPORE FORMATION IN N-TYPE SILICON 190 9.4
CALCULATING MACROPORE GROWTH AND MASS TRANSPORT 198 9.5 DESIGN RULES AND
LIMITS OF MACROPORE ARRAY FABRICATION 202 CONTENTS XI 10 APPLICATIONS
207 10.1 OVERVIEW 207 10.2 AC PROPERTIES OF SILICON ELECTRODES AND
CARRIER CONCENTRATION PROFILING 208 10.3 DIFFUSION LENGTH AND DEFECT
MAPPING 211 10.4 SENSORS AND BIOCHIPS 219 10.5 PASSIVE AND ACTIVE
OPTICAL DEVICES 225 10.6 POROUS SILICON-BASED ELECTRONIC DEVICES 232
10.7 SACRIFICIAL LAYER APPLICATIONS 236 APPENDICES 243 SUPPLIER
REFERENCES 249 REFERENCES 251 SUBJECT INDEX 273
|
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| discipline | Chemie / Pharmazie Elektrotechnik / Elektronik / Nachrichtentechnik |
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| illustrated | Illustrated |
| indexdate | 2024-07-09T18:58:22Z |
| institution | BVB |
| isbn | 3527293213 |
| language | English |
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| physical | XI, 277 S. Ill., graph. Darst. |
| publishDate | 2002 |
| publishDateSearch | 2002 |
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| publisher | Wiley-VCH |
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| spelling | Lehmann, Volker Verfasser aut Electrochemistry of silicon instrumentation, science, materials and applications Volker Lehmann Weinheim Wiley-VCH 2002 XI, 277 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Elektrochemie (DE-588)4014241-3 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Silicium (DE-588)4077445-4 s Elektrochemie (DE-588)4014241-3 s DE-604 http://www.loc.gov/catdir/toc/wiley023/2002280326.html Table of contents GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009689898&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Lehmann, Volker Electrochemistry of silicon instrumentation, science, materials and applications Elektrochemie (DE-588)4014241-3 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4014241-3 (DE-588)4077445-4 |
| title | Electrochemistry of silicon instrumentation, science, materials and applications |
| title_auth | Electrochemistry of silicon instrumentation, science, materials and applications |
| title_exact_search | Electrochemistry of silicon instrumentation, science, materials and applications |
| title_full | Electrochemistry of silicon instrumentation, science, materials and applications Volker Lehmann |
| title_fullStr | Electrochemistry of silicon instrumentation, science, materials and applications Volker Lehmann |
| title_full_unstemmed | Electrochemistry of silicon instrumentation, science, materials and applications Volker Lehmann |
| title_short | Electrochemistry of silicon |
| title_sort | electrochemistry of silicon instrumentation science materials and applications |
| title_sub | instrumentation, science, materials and applications |
| topic | Elektrochemie (DE-588)4014241-3 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Elektrochemie Silicium |
| url | http://www.loc.gov/catdir/toc/wiley023/2002280326.html http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009689898&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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