Electrochemistry of silicon and its oxide:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Kluwer Academic/Plenum Publishers
2001
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXVI, 510 S. Ill., graph. Darst. |
| ISBN: | 0306465418 |
Internformat
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Datensatz im Suchindex
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| adam_text | ELECTROCHEMISTRY OF SILICON AND ITS OXIDE XIAOGE GREGORY ZHANG COMINCO
LTD. MISSISSAUGA, ONTARIO, CANADA AND MCMASTER UNIVERSITY HAMILTON,
ONTARIO, CANADA KLUWER ACADEMIC/PLENUM PUBLISHERS NEW YORK BOSTON
DORDRECHT LONDON MOSCOW / CONTENTS LIST OF SYMBOLS XXIII CHAPTER 1.
BASIC THEORIES OF SEMICONDUCTOR ELECTROCHEMISTRY 1.1. INTRODUCTION 1
1.2. ENERGETICS OF SEMICONDUCTOR/ELECTROLYTE INTERFACE 2 1.2.1. ENERGY
LEVELS IN SEMICONDUCTOR 4 1.2.2. ENERGY LEVELS IN ELECTROLYTE 6 1.2.3.
DISTRIBUTION OF ENERGY LEVELS IN ELECTROLYTE 6 1.2.4. ENERGY LEVELS AT
SEMICONDUCTOR/ELECTROLYTE INTERFACE 7 1.3. POTENTIAL AND CHARGE
DISTRIBUTION IN SPACE CHARGE LAYER 9 1.3.1. CARRIER DENSITY IN SPACE
CHARGE REGION 9 1.3.2. DEPLETION LAYER 10 1.3.3. ACCUMULATION LAYER AND
INVERSION LAYER 11 1.3.4. HEIMHOLTE DOUBLE LAYER 13 1.3.5. SURFACE
STATES 14 1.3.6. FERMI LEVEL PINNING 16 1.3.7. EQUIVALENT CIRCUIT AND
CAPACITANCE OF SEMICONDUCTOR/ELECTROLYTE INTERFACE 16 1.3.8. FIATBAND
POTENTIALS 18 1.4. KINETICS OF CHARGE TRANSFER 21 1.4.1. BASIC THEORIES
21 1.4.2. LIMITATIONS OF THE BASIC THEORIES 25 1.4.3. LIMITING CURRENT
27 1.4.4. BREAKDOWN 27 1.4.5. POTENTIAL DISTRIBUTION 29 1.4.6. CURRENT
MULTIPLICATION 31 1.5. PHOTOEFFECTS 31 1.5.1. PHOTOCURRENT 31 1.5.2.
PHOTOPOTENTIAL 35 1.5.3. EFNCIENCY OF ENERGY CONVERSION 37 XV XVI
CONTENTS 1.5.4. SURFACE RECOMBINATION 37 1.6. OPEN-CIRCUIT POTENTIAL 39
1.7. EXPERIMENTAL TECHNIQUES 42 CHAPTER 2. SILICON/ELECTROLYTE INTERFACE
2.1. BASIC PROPERTIES OF SILICON 45 2.2. THERMODYNAMIC STABILITY IN
AQUEOUS SOLUTIONS 47 2.3. SURFACE ADSORPTION 53 2.3.1. HYDROGEN
TERMINATION 55 MECHANISTIC ASPECTS 58 2.3.2. FLUORIDE TERMINATION 60
2.3.3. ADSORPTION OF METAL AND ORGANIC IMPURITIES 61 2.4. NATIVE OXIDE
63 2.4.1. IN AIR 63 2.4.2. IN WATER AND SOLUTIONS 67 2.5. HYDROPHOBIE
AND HYDROPHILIC SURFACES 70 2.6. SURFACE STATES 71 2.7. FIATBAND
POTENTIALS : 75 2.7.1. EFFECT OF PH 75 2.7.2. EFFECT OF SURFACE
CONDITION 78 2.7.3. EFFECT OF SURFACE STATES 80 2.7.4. BAND DIAGRAMS 82
2.8. OPEN-CIRCUIT POTENTIALS 82 2.8.1. EFFECT OF VARIOUS FACTORS 82
2.8.2. CORROSION CURRENT 89 CHAPTER 3. ANODIC OXIDE 3.1. INTRODUCTION 91
3.2. TYPES OF OXIDES 91 3.2.1. THERMAL OXIDE 92 3.2.2. CHEMICAL VAPOR
DEPOSITION 93 3.2.3. LIQUID-PHASE DEPOSITION 93 3.2.4. NATIVE OXIDE AND
ANODIC OXIDE 93 3.2.5. USE OF OXIDES IN DEVICE FABRICATION 94 3.3.
FORMATION OF ANODIC OXIDES 94 3.3.1. GENERAL 94 3.3.2. EFFECT OF
SOLUTION COMPOSITUM 96 3.3.3. EFFECT OF SILICON SUBSTRATE 100 3.3.4.
EFFECT OF POLARIZATION CONDITIONS 101 3.3.5. EFFECT OF ILLUMINATION 103
3.3.6. ELECTROLUMINESCENCE 104 3.4. GROWTH MECHANISMS 105 CONTENTS XVUE
3.4.1. REACTIONS 105 3.4.2. IONIC TRANSPORT WITHIN OXIDE 106 3.4.3.
GROWTH ON N-SI 108 3.4.4. ELECTROLUMINESCENCE 109 3.4.5. AN OVERALL
GROWTH MODEL 110 3.4.6. GROWTH KINETICS 112 THERMAL OXIDES 112 ANODIC
OXIDES 115 3.5. PROPERTIES 116 3.5.1. PHYSICAL AND CHEMICAL PROPERTIES
118 SI/SI0 2 INTERFACE 120 3.5.2. ELECTRICAL PROPERTIES 122 THERMAL
OXIDES 123 ANODIC OXIDES 125 CHAPTER 4. ETCHING OF OXIDES 4.1.
INTRODUCTION 131 4.2. GENERAL 131 4.3. THERMAL OXIDE 136 4.4. QUARTZ AND
FUSED SILICA 142 4.5. DEPOSITED OXIDES 146 4.6. ANODIC OXIDES 148 4.7.
ETCHING MECHANISMS 151 4.7.1. REACTIONS 151 IN NONFLUORIDE SOLUTIONS 151
IN HF-BASED SOLUTIONS . 155 4.7.2. RATE EQUATIONS 158 4.7.3. EFFECT OF
OXIDE STRUCTURE 163 CHAPTER 5. ANODIC BEHAVIO R 5.1. INTRODUCTION 167
5.2. CURRENT-POTENTIAL RELATIONSHIP 167 5.2.1. FLUORIDE SOLUTIONS 168
EFFECT OF SOLUTION COMPOSITION 170 5.2.2. ALKALINE SOLUTIONS 173 5.3.
PHOTOEFFECT 174 5.3.1. QUANTUM YIELD AND SURFACE RECOMBINATION 175 5.4.
EFFECTIVE DISSOLUTION VALENCE 180 5.5. HYDROGEN EVOLUTION 183 5.6.
LIMITING CURRENT 184 5.7. IMPEDANCE OF INTERFACE LAYERS 189 5.8. TAFEL
SLOPE AND DISTRIBUTION OF POTENTIAL 193 XVUEI CONTENTS 5.8.1. TAFEL SLOPE
193 5.8.2. POTENTIAL DISTRIBUTION 194 5.9. PASSIVATION 195 5.9.1.
OCCURRENCE 195 5.9.2. PASSIVATION IN ALKALINE SOLUTIONS 196 5.9.3.
PASSIVE FILMS 201 5.10. CURRENT OSCILLATION 207 5.10.1. AMPLITUDE AND
FREQUENCY 207 5.10.2. OSCILLATION OF ANODIC OXIDE THICKNESS AND
PROPERTIES 210 5.10.3. MECHANISMS 212 A NEW MODEL 215 5.11.
PARTICIPATION OF BANDS AND RATE-LIMITING PROCESSES 216 5.12. REACTION
MECHANISMS 219 5.12.1. TURNER-MEMMING MODEL 219 5.12.2. LATER
MODIFICATIONS 222 MODEL TO ACCOUNT FOR ELECTRON INJECTION INTO THE
CURRENT BAND 222 MODIFICATION FOR HYDROGEN TERMINATION 222 CONSIDERATION
OF CHEMICAL VERSUS ELECTROCHEMICAL REACTION 223 INDIVIDUAL STEPS IN THE
TRANSFER OF VALENCE ELECTRONS 223 5.12.3. MODELS FOR THE REACTION
MECHANISMS IN ALKALINE SOLUTIONS 225 5.12.4. AN OVERALL REACTION SCHEME
228 ELEMENTAL STEPS 229 REACTION PATHS 231 CHAPTER 6. CATHODIC BEHAVIOR
AND REDOX COUPLES 6.1. INTRODUCTION 237 6.2. HYDROGEN EVOLUTION 237
6.2.1. KINETICS 238 6.2.2. SURFACE TRANSFORMATION 241 6.3. METAL
DEPOSITION 243 6.3.1. KINETICS 243 6.3.2. MORPHOLOGY 249 6.4. DEPOSITION
OF SILICON 251 6.5. REDOX COUPLES 252 6.5.1. INDIVIDUAL REDOX COUPLES
254 NOI/ NOI 256 BR/BR 258 H 2 0 2 /H 2 0 260 OTHER REDOX SPECIES 261
6.5.2. ELECTROLUMINESCENCE ASSOCIATED WITH REDOX REACTIONS 266 CONTENTS
XIX 6.6. OPEN-CIRCUIT PHOTOVOLTAGE 268 6.7. SURFACE MODIFIKATION 270
6.7.1. METALLIC DEPOSITS 272 6.7.2. POLYMER COATINGS 274 6.7.3.
NONAQUEOUS SOLUTIONS 276 CHAPTER 7. ETCHING OF SILICON 7.1. INTRODUCTION
279 7.2. GENERAL 279 7.3. FLUORIDE SOLUTIONS 285 7.3.1. ABSENCE OF
OXIDANTS 285 7.3.2. EFFECT OF CR0 3 288 7.3.3. EFFECT OF HN0 3 290
7.3.4. EFFECT OF OTHER OXIDANTS 293 7.4. ALKALINE SOLUTIONS 294 7.4.1.
KOH SOLUTIONS 295 ETCHING MECHANISM 297 7.4.2. OTHER INORGANIC SOLUTIONS
298 NA40H SOLUTIONS 299 HYDRAZINE 301 7.4.3. ORGANIC SOLUTIONS 302 EDP
SOLNTIONS 302 ETHANOLAMINE 305 TETRAMETHYL AMMONIUM HYDROXIDE (TMAH) 306
7.5. ETCH RATE REDUCTION OF HEAVILY DOPED MATERIALS 308 7.6. ANISOTROPIE
ETCHING 312 7.6.1. SENSITIVITY OF ETCH RATES TO CRYSTAL ORIENTATION 312
7.6.2. MECHANISMS 316 RATE-LIMITING PROCESS 317 PASSIVATION MODELS 317
SURFACE REACTION KINETICS-BASED MODELS 318 MECHANISM OF ANISOTROPIE
ETCHING 320 7.6.3. BASIC FEATURES OF ANISOTROPICALLY ETCHED SURFACES 323
7.7. SURFACE ROUGHNESS 327 7.7.1. MICROROUGHNESS 328 7.7.2.
MACROROUGHNESS 331 CRYSTALLOGRAPHIC CHARACTERS AND FORMATION OF HIUOCKS
. . . 334 7.7.3. ORIGINS OF ROUGHNESS 338 7.8. APPLICATIONS 339 7.8.1.
CLEANING 340 RCA CLEANING 342 7.8.2. DEFECT ETCHING 344 XX CONTENTS
7.8.3. MATERIAL REMOVAL 347 UNIFORM MATERIAL REMOVAL 347 SELECTIVE
MATERIAL REMOVAL 349 CHAPTER 8. POROUS SILICON 8.1. INTRODUCTION 353
8.2. FORMATION OF POROUS SILICON 353 8.2.1. CHARACTERISTICS OF
J -VCURVES 353 8.2.2. CONDITIONS FOR PS FORMATION AND ELECTROCHEMICAL
POLISHING 356 8.2.3. EFFECTIVE DISSOLUTION VALENCE AND HYDROGEN
EVOLUTION 358 8.2.4. GROWTH RATE OF POROUS SILICON 362 8.2.5. MASS
TRANSPORT 365 8.2.6. CHEMICAL DISSOLUTION DURING PS FORMATION 367 8.3.
MORPHOLOGY 368 8.3.1. GENERAL 368 8.3.2. DIAMETER AND INTERPORE SPACING
370 EFFECT OF DOPING 370 EFFECT OF POTENTIAL 370 PRIMARY AND BRANCHED
PORES 373 PORE ARRAYS 373 VARIATION FROM SURFACE TO BULK 375 INTERPORE
SPACING 377 DISTRIBUTION OF PORE DIAMETER 377 PORE DENSITY 378 8.3.3.
PORE ORIENTATION AND SHAPE 380 8.3.4. PORE BRANDUNG 383 8.3.5. INTERFACE
BETWEEN PS AND SILICON 386 8.3.6. DEPTH VARIATION 386 TRANSITIONAL LAYER
386 TWO-LAYER PS 389 FILL OF PORES 393 8.3.7. DENSITY AND SPECIFIC
SURFACE AREA 394 8.3.8. COMPOSITUM 398 8.3.9. CRYSTALLOGRAPHIC STRUCTURE
399 8.3.10. SUMMARY 402 8.4. PS FORMED AT OCP 406 8.5. PS FORMED UNDER
SPECIAL CONDITIONS 407 8.6. FORMATION MECHANISMS 408 8.6.1. HISTORICAL
DEVELOPMENT 408 DISCOVERY OF PS AND THE INITIAL MODEL 408 MACROPORES ON
N-SI AND THE BARRIER BREAKDOWN MODEL . . . 410 CHARACTERIZATION OF PS
AND GROWTH KINETICS 410 CONTENTS XXI DEPLETION LAYER AND FIELD
INTENSIFICATION MODEL 410 CARRIER DIFFUSION MODEL 411 FORMATION
CONDITION OF PS 412 QUANTUM CONFINEMENT MODEL 412 SURFACE CURVATURE
MODEL 413 FORMATION OF UNIFORMLY SPACED PORE ARRAY 414 FORMATION OF
TWO-LAYER PS ON MUMINATED N-SI 415 THEORIES ON THE MACRO PS FORMED ON
LOWLY DOPED P-SI.. 415 MISCELLANEOUS HYPOTHESES 416 INTEGRATION OF
MODELS 416 CURRENT BURST THEORY 417 ADVANCES IN THE UNDERSTANDING OF
ELECTROCHEMICAL REACTIONS 419 SUMMARY 420 8.6.2. ANALYSIS OF THE
MECHANISTIC ASPECTS INVOLVED IN PS FORMATION 420 EFFECT OF RADIUS OF
CURVATURE 420 POTENTIAL DROP IN THE SUBSTRATE 422 ANISOTROPIE EFFECT 423
REACTIONS ON THE SURFACES OF SILICON AND SILICON OXIDE . . . 425
DISTRIBUTION OF REACTIONS AND THEIR RATES ON PORE BOTTOMS 426
DISSOLUTION OF PS 428 POTENTIAL DROPS IN DIFFERENT PHASES OF THE CURRENT
PATH . . . 428 RELATIVITY OF THE DIMENSIONS AND EVENTS 429 PORE DIAMETER
AND INTERPORE SPACING 430 VARITATION OF MORPHOLOGY FROM SURFACE TO BULK.
INITIATION OF PORES 433 8.6.3. SUMMARY 435 8.7. PROPERTIES AND
APPLICATIONS 437 CHAPTER 9. SUMMARIES AND GENERAL REMARKS 9.1.
COMPLEXITY 441 9.2. SURFACE CONDITION 444 9.3. OXIDE FILM 444 9.4.
SENSITIVITY TO CURVATURE 446 9.5. SENSITIVITY TO LATTICE STRUCTURE 448
9.6. RELATIVITY 449 9.7. FUTURE RESEARCH INTERESTS 450 REFERENCES 453
INDEX 499
|
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| illustrated | Illustrated |
| indexdate | 2024-07-09T19:02:09Z |
| institution | BVB |
| isbn | 0306465418 |
| language | English |
| lccn | 2001042287 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009844351 |
| oclc_num | 47216683 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | XXVI, 510 S. Ill., graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Kluwer Academic/Plenum Publishers |
| record_format | marc |
| spelling | Zhang, Xiaoge Gregory Verfasser aut Electrochemistry of silicon and its oxide Xiaoge Gregory Zhang New York [u.a.] Kluwer Academic/Plenum Publishers 2001 XXVI, 510 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemistry Semiconductors Electric properties Silicon compounds Electric properties Siliciumoxide (DE-588)4181398-4 gnd rswk-swf Elektrochemie (DE-588)4014241-3 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Siliciumoxide (DE-588)4181398-4 s Elektrochemie (DE-588)4014241-3 s DE-604 Silicium (DE-588)4077445-4 s GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009844351&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Zhang, Xiaoge Gregory Electrochemistry of silicon and its oxide Electrochemistry Semiconductors Electric properties Silicon compounds Electric properties Siliciumoxide (DE-588)4181398-4 gnd Elektrochemie (DE-588)4014241-3 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4181398-4 (DE-588)4014241-3 (DE-588)4077445-4 |
| title | Electrochemistry of silicon and its oxide |
| title_auth | Electrochemistry of silicon and its oxide |
| title_exact_search | Electrochemistry of silicon and its oxide |
| title_full | Electrochemistry of silicon and its oxide Xiaoge Gregory Zhang |
| title_fullStr | Electrochemistry of silicon and its oxide Xiaoge Gregory Zhang |
| title_full_unstemmed | Electrochemistry of silicon and its oxide Xiaoge Gregory Zhang |
| title_short | Electrochemistry of silicon and its oxide |
| title_sort | electrochemistry of silicon and its oxide |
| topic | Electrochemistry Semiconductors Electric properties Silicon compounds Electric properties Siliciumoxide (DE-588)4181398-4 gnd Elektrochemie (DE-588)4014241-3 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Electrochemistry Semiconductors Electric properties Silicon compounds Electric properties Siliciumoxide Elektrochemie Silicium |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009844351&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT zhangxiaogegregory electrochemistryofsiliconanditsoxide |