Optical absorption of impurities and defects in semiconducting crystals: 1 Hydrogen-like centres
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2010
|
| Schriftenreihe: | Springer series in solid state sciences
158 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XIX, 470 S. graph. Darst. |
| ISBN: | 9783540959557 9783642263569 |
Internformat
MARC
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Datensatz im Suchindex
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CONTENTS 1 INTRODUCTION 1 1.1 BASIC CONCEPTS 1 1.2 A SHORT HISTORICAL
SURVEY 3 1.3 GENERAL PROPERTIES OF THE HYDROGEN-LIKE CENTRES 5 1.3.1
WHAT ARE THE HYDROGEN-LIKE CENTRES 5 1.3.2 ELECTRICAL ACTIVITY 6 1.3.2.1
COMPENSATION 8 1.3.2.2 PASSIVATION 11 1.3.3 OPTICAL TRANSITIONS 11 1.3.4
BOUND EXCITONS 14 1.3.5 SPIN EFFECTS 16 1.4 NOTATIONS FOR CENTRES AND
OPTICAL TRANSITIONS 17 REFERENCES 18 2 ORIGINS AND ATOMIC PROPERTIES OF
H-LIKE CENTRES 21 2.1 ORIGINS 21 2.1.1 OCCURRENCE IN NATURE 21 2.1.2
CONTAMINATION 22 2.1.3 DOPING 25 2.1.4 THERMAL TREATMENTS AND
IRRADIATION 29 2.1.5 CONCENTRATION MEASUREMENTS 30 2.2 STRUCTURAL
PROPERTIES 31 2.2.1 GLOBAL ATOMIC CONFIGURATIONS 31 2.2.2 SOLUBILITIES
AND DIFFUSION COEFFICIENTS 35 2.2.2.1 SOLUBILITY 35 2.2.2.2 DIFFUSION
COEFFICIENTS 37 2.2.3 LATTICE DISTORTION AND METASTABILITY 38 REFERENCES
42 BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/993291155
DIGITALISIERT DURCH XVI CONTENTS 3 BULK OPTICAL ABSORPTION 45 3.1
REFRACTIVE INDEX AND DIELECTRIC CONSTANT 45 3.2 INTRINSIC LATTICE
ABSORPTION 50 3.2.1 ONE-PHONON EFFECT 50 3.2.2 MULTI-PHONON ABSORPTION
AND ANHARMONIEITY 55 3.3 ELECTRONIC ABSORPTION 57 3.3.1 ENERGY GAP AND
FUNDAMENTAL ABSORPTION 57 3.3.2 EXCITONS 74 3.3.3 FREE-CARRIER EFFECTS
77 REFERENCES 81 4 METHODS AND TECHNIQUES OF ABSORPTION SPECTROSCOPY OF
SOLIDS 85 4.1 INTRODUCTION 85 4.2 RADIATION SOURCES AND SPECTROMETERS 89
4.2.1 TUNABLE SOURCES 89 4.2.2 BROADBAND SOURCES 90 4.2.3 SPECTROMETERS
91 4.2.3.1 DISPERSIVE MONOCHROMATORS 91 4.2.3.2 FOURIER TRANSFORM
SPECTROMETERS 94 4.3 FILTERING AND POLARIZATION 99 4.4 RADIATION
DETECTION 100 4.4.1 THERMAL DETECTION 100 4.4.2 PHOTOCONDUCTIVE
DETECTION 103 4.4.2.1 INTRINSIC PHOTOCONDUCTORS 103 4.4.2.2 EXTRINSIC
PHOTOCONDUCTORS 104 4.4.3 LIMITS TO DETECTORS SENSITIVITY 106 4.5
CONDITIONING THE SAMPLES 110 4.6 COOLING THE SAMPLES ILL 4.7 COMPRESSING
THE SAMPLES 115 4.7.1 UNIAXIAL STRESSES 115 4.7.2 HYDROSTATIC STRESSES
116 4.8 MAGNETOOPTICAL MEASUREMENTS 119 REFERENCES 121 5 EFFECTIVE-MASS
THEORY AND ITS USE 125 5.1 INITIAL ASSUMPTIONS 125 5.1.1 SELECTION RULES
127 5.2 DONOR CENTRES 128 5.2. CONTENTS XVII 5.4 OSCILLATOR STRENGTHS
159 5.4.1 DONOR TRANSITIONS 160 5.4.2 ACCEPTOR TRANSITIONS 163
REFERENCES 165 DONOR AND DONOR-LIKE EM SPECTRA 169 6.1 INTRODUCTION 169
6.2 GROUP-V AND LI DONORS IN GROUP-IV CRYSTALS 171 6.2.1 SILICON 171
6.2.2 GERMANIUM 186 6.2.3 SILICON CARBIDE 193 6.2.4 DIAMOND 196 6.3
GROUP-VI- AND MG DONORS IN GROUP-IV CRYSTALS 198 6.3.1 SILICON 198
6.3.1.1 THE NEUTRAL CHARGE STATE 198 6.3.1.2 THE SINGLY-IONIZED CHARGE
STATE 208 6.3.1.3 OTHER CHALCOGEN-RELATED DONORS 215 6.3.2 GERMANIUM 218
6.4 O-RELATED DONORS IN GROUP IV CRYSTALS 220 6.4.1 THE THERMAL DOUBLE
DONORS 220 6.4.1.1 SILICON 221 6.4.1.2 GERMANIUM 231 6.4.2 THE SHALLOW
THERMAL DONORS IN SILICON 236 6.4.3 THE ULTRASHALLOW THERMAL DONORS IN
SILICON 241 6.5 OTHER SHALLOW DONORS INVOLVING HYDROGEN 242 6.6 TMS,
GROUP-I ELEMENTS AND PT IN SILICON 243 6.6.1 INTERSTITIAL IRON 243 6.6.2
AG, AU, AND PT 247 6.7 PSEUDO-DONORS AND ISOELECTRONIC DONORS 249 6.7.1
THE "C" AND "P" CENTRES IN SILICON 250 6.7.2 THE (S,CU) CENTRE IN
SILICON 253 6.7.3 PSEUDO-DONOR BES IN GERMANIUM 254 6.8 DONORS IN III-V
AND II-VI COMPOUNDS 255 6.8.1 QUASI-HYDROGENIC EFFECTIVE-MASS DONORS 257
6.8.1.1 CUBIC SEMICONDUCTORS 257 6.8.1.2 NON-CUBIC SEMICONDUCTORS 261
6.8.2 SEMICONDUCTORS WITH CB DEGENERACY 263 6. XVIII CONTENTS 7 EM
ACCEPTOR SPECTRA 281 7.1 INTRODUCTION 281 7.2 GROUP-ILL ACCEPTORS IN
GROUP-IV CRYSTALS 282 7.2.1 SILICON 282 7.2.1.1 THE P3/2 SPECTRA 283
7.2.1.2 THE P 1/2 SPECTRA 298 7.2.2 GERMANIUM 300 7.2.2.1 SINGLE
ACCEPTOR COMPLEXES 304 7.2.3 DIAMOND AND SIC 307 7.3 GROUPS-II AND -I
ACCEPTORS IN GROUP-IV CRYSTALS 311 7.3.1 GERMANIUM 312 7.3.1.1 THE A 0
CHARGE STATE 312 7.3.1.2 THE A~ CHARGE STATE 315 7.3.2 SILICON 317 7.4
AN ISOELECTRONIC ACCEPTOR: THE BE 2 PAIR IN SILICON 323 7.5 AN ACCEPTOR
EQUIVALENT OF H~: THE A + ION 327 7.6 ACCEPTORS IN III-V AND II-VI
SEMICONDUCTORS 328 7.6.1 GROUPS-II AND -IV ACCEPTORS IN III-V COMPOUNDS
328 7.6.2 THE B AS (78-MEV/203-MEV) DOUBLE ACCEPTOR IN GAAS. 334 7.6.3
TMS ACCEPTORS IN III-V COMPOUNDS 335 7.6.4 ACCEPTORS IN II-VI COMPOUNDS
337 REFERENCES 339 8 EFFECTS OF PERTURBATIONS 347 8.1 INTRODUCTION 347
8.2 MECHANICAL STRESSES 348 8.2.1 EFFECTS ON ELECTRONIC TRANSITIONS 349
8.2.1.1 EM DONORS WITH CB DEGENERACY 350 8.2.1.2 EM ACCEPTORS 373
8.2.1.3 STRESS-INDUCED INHOMOGENEOUS BROADENING . 382 8.2. CONTENTS
XIX 8.5 LINE WIDTHS AND LIFETIMES 418 8.5.1 PHONON BROADENING 419 8.5.2
CONCENTRATION BROADENING 422 8.5.3 LIFETIMES 422 REFERENCES 424 APPENDIX
A ENERGY UNITS USED IN SPECTROSCOPY AND SOLID-STATE PHYSICS 431 APPENDIX
B BRAVAIS LATTICES, SYMMETRY AND CRYSTALS 433 B.I THE RECIPROCAL LATTICE
435 B.2 LATTICE PLANES AND MILLER INDICES 436 B.3 A TOOLBOX FOR SYMMETRY
GROUPS 437 B.3.1 THE ABSTRACT GROUPS 437 B.3.2 THE SYMMETRY POINT GROUPS
438 B.3.3 REPRESENTATIONS AND BASIS FUNCTIONS 439 B.3.4 THE SYMMETRY
SPACE GROUPS 442 B.4 SOME CRYSTAL STRUCTURES 444 B.4.1 CUBIC STRUCTURES
444 B.4.2 HEXAGONAL STRUCTURES 445 B.4.3 OTHER CRYSTAL STRUCTURES 447
REFERENCES 448 APPENDIX C OPTICAL BAND GAPS AND CRYSTAL STRUCTURES OF
SOME INSULATORS AND SEMICONDUCTORS 449 APPENDIX D TABLE OF ISOTOPES 451
APPENDIX E SOME TENSOR PROPERTIES 461 REFERENCES 462 INDEX 463 |
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| language | English |
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| spelling | Pajot, Bernard Verfasser aut Optical absorption of impurities and defects in semiconducting crystals 1 Hydrogen-like centres Bernard Pajot Berlin [u.a.] Springer 2010 XIX, 470 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in solid state sciences 158 Halbleiter (DE-588)4022993-2 gnd rswk-swf Verunreinigung (DE-588)4188107-2 gnd rswk-swf Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s Optische Eigenschaft (DE-588)4123887-4 s DE-604 Verunreinigung (DE-588)4188107-2 s (DE-604)BV036547097 1 Erscheint auch als Online-Ausgabe 978-3-540-95956-4 Springer series in solid state sciences 158 (DE-604)BV000016582 158 text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3261704&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020468762&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Pajot, Bernard Optical absorption of impurities and defects in semiconducting crystals Springer series in solid state sciences Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4188107-2 (DE-588)4123887-4 (DE-588)4125030-8 |
| title | Optical absorption of impurities and defects in semiconducting crystals |
| title_auth | Optical absorption of impurities and defects in semiconducting crystals |
| title_exact_search | Optical absorption of impurities and defects in semiconducting crystals |
| title_full | Optical absorption of impurities and defects in semiconducting crystals 1 Hydrogen-like centres Bernard Pajot |
| title_fullStr | Optical absorption of impurities and defects in semiconducting crystals 1 Hydrogen-like centres Bernard Pajot |
| title_full_unstemmed | Optical absorption of impurities and defects in semiconducting crystals 1 Hydrogen-like centres Bernard Pajot |
| title_short | Optical absorption of impurities and defects in semiconducting crystals |
| title_sort | optical absorption of impurities and defects in semiconducting crystals hydrogen like centres |
| topic | Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | Halbleiter Verunreinigung Optische Eigenschaft Gitterbaufehler |
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