Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Düsseldorf
VDI Verl.
1998
|
| Edition: | Als Ms. gedr. |
| Series: | Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI / 9]
275 |
| Subjects: | |
| Item Description: | Zugl.: Darmstadt, Techn. Hochsch., Diss. |
| Physical Description: | XI, 137 S. Ill., graph. Darst. |
Staff View
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| 100 | 1 | |a Henkel, Achim |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |c Achim Henkel |
| 250 | |a Als Ms. gedr. | ||
| 264 | 1 | |a Düsseldorf |b VDI Verl. |c 1998 | |
| 300 | |a XI, 137 S. |b Ill., graph. Darst. | ||
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Record in the Search Index
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| author | Henkel, Achim |
| author_facet | Henkel, Achim |
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| author_sort | Henkel, Achim |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV011987737 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:19:44Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008111720 |
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| physical | XI, 137 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | VDI Verl. |
| record_format | marc |
| series2 | Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI / 9] |
| spelling | Henkel, Achim Verfasser aut Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel Als Ms. gedr. Düsseldorf VDI Verl. 1998 XI, 137 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI / 9] 275 Zugl.: Darmstadt, Techn. Hochsch., Diss. Galliumphosphid (DE-588)4155879-0 gnd rswk-swf Hochfrequenztechnik (DE-588)4025202-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Heteroübergang (DE-588)4127243-2 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Indiumphosphid (DE-588)4161535-9 s Galliumphosphid (DE-588)4155879-0 s Galliumarsenid (DE-588)4019155-2 s Heteroübergang (DE-588)4127243-2 s Heterobipolartransistor (DE-588)4254091-4 s Hochfrequenztechnik (DE-588)4025202-4 s DE-604 9] Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI 275 (DE-604)BV047505631 275 |
| spellingShingle | Henkel, Achim Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Galliumphosphid (DE-588)4155879-0 gnd Hochfrequenztechnik (DE-588)4025202-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Heteroübergang (DE-588)4127243-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| subject_GND | (DE-588)4155879-0 (DE-588)4025202-4 (DE-588)4019155-2 (DE-588)4127243-2 (DE-588)4254091-4 (DE-588)4161535-9 (DE-588)4113937-9 |
| title | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_auth | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_exact_search | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_full | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel |
| title_fullStr | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel |
| title_full_unstemmed | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel |
| title_short | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_sort | study and realization of ingap gaas collector up double heterojunction bipolar transistors for high performance rf applications |
| topic | Galliumphosphid (DE-588)4155879-0 gnd Hochfrequenztechnik (DE-588)4025202-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Heteroübergang (DE-588)4127243-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| topic_facet | Galliumphosphid Hochfrequenztechnik Galliumarsenid Heteroübergang Heterobipolartransistor Indiumphosphid Hochschulschrift |
| volume_link | (DE-604)BV047505631 |
| work_keys_str_mv | AT henkelachim studyandrealizationofingapgaascollectorupdoubleheterojunctionbipolartransistorsforhighperformancerfapplications |