Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Düsseldorf
VDI Verl.
1998
|
| Ausgabe: | Als Ms. gedr. |
| Schriftenreihe: | Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI / 9]
275 |
| Schlagworte: | |
| Beschreibung: | Zugl.: Darmstadt, Techn. Hochsch., Diss. |
| Beschreibung: | XI, 137 S. Ill., graph. Darst. |
Internformat
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| 100 | 1 | |a Henkel, Achim |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |c Achim Henkel |
| 250 | |a Als Ms. gedr. | ||
| 264 | 1 | |a Düsseldorf |b VDI Verl. |c 1998 | |
| 300 | |a XI, 137 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI / 9] |v 275 | |
| 500 | |a Zugl.: Darmstadt, Techn. Hochsch., Diss. | ||
| 650 | 0 | 7 | |a Galliumphosphid |0 (DE-588)4155879-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Hochfrequenztechnik |0 (DE-588)4025202-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heteroübergang |0 (DE-588)4127243-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
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| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
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Datensatz im Suchindex
| _version_ | 1804126582019719168 |
|---|---|
| any_adam_object | |
| author | Henkel, Achim |
| author_facet | Henkel, Achim |
| author_role | aut |
| author_sort | Henkel, Achim |
| author_variant | a h ah |
| building | Verbundindex |
| bvnumber | BV011987737 |
| classification_rvk | ZN 4850 |
| classification_tum | ELT 315d ELT 280d |
| ctrlnum | (OCoLC)75848598 (DE-599)BVBBV011987737 |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | Als Ms. gedr. |
| format | Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV011987737 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:19:44Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008111720 |
| oclc_num | 75848598 |
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| owner_facet | DE-91 DE-BY-TUM DE-210 DE-83 |
| physical | XI, 137 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | VDI Verl. |
| record_format | marc |
| series2 | Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI / 9] |
| spelling | Henkel, Achim Verfasser aut Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel Als Ms. gedr. Düsseldorf VDI Verl. 1998 XI, 137 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI / 9] 275 Zugl.: Darmstadt, Techn. Hochsch., Diss. Galliumphosphid (DE-588)4155879-0 gnd rswk-swf Hochfrequenztechnik (DE-588)4025202-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Heteroübergang (DE-588)4127243-2 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Indiumphosphid (DE-588)4161535-9 s Galliumphosphid (DE-588)4155879-0 s Galliumarsenid (DE-588)4019155-2 s Heteroübergang (DE-588)4127243-2 s Heterobipolartransistor (DE-588)4254091-4 s Hochfrequenztechnik (DE-588)4025202-4 s DE-604 9] Verein Deutscher Ingenieure: [Fortschritt-Berichte VDI 275 (DE-604)BV047505631 275 |
| spellingShingle | Henkel, Achim Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Galliumphosphid (DE-588)4155879-0 gnd Hochfrequenztechnik (DE-588)4025202-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Heteroübergang (DE-588)4127243-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| subject_GND | (DE-588)4155879-0 (DE-588)4025202-4 (DE-588)4019155-2 (DE-588)4127243-2 (DE-588)4254091-4 (DE-588)4161535-9 (DE-588)4113937-9 |
| title | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_auth | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_exact_search | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_full | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel |
| title_fullStr | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel |
| title_full_unstemmed | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications Achim Henkel |
| title_short | Study and realization of InGaP/GaAs "collector-up" double heterojunction bipolar transistors for high performance RF applications |
| title_sort | study and realization of ingap gaas collector up double heterojunction bipolar transistors for high performance rf applications |
| topic | Galliumphosphid (DE-588)4155879-0 gnd Hochfrequenztechnik (DE-588)4025202-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Heteroübergang (DE-588)4127243-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| topic_facet | Galliumphosphid Hochfrequenztechnik Galliumarsenid Heteroübergang Heterobipolartransistor Indiumphosphid Hochschulschrift |
| volume_link | (DE-604)BV047505631 |
| work_keys_str_mv | AT henkelachim studyandrealizationofingapgaascollectorupdoubleheterojunctionbipolartransistorsforhighperformancerfapplications |