Modeling and simulating charge sensitive MOS circuits:
Abstract: "We show how charge distribution effects in MOS transistors are reflected only correctly by models based on the physical properties of the device. Hence one has to consider carefully the impact of modeling to obtain correct results for MOS circuits by numerical simulation. Additionall...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
München
1995
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| Schriftenreihe: | Technische Universität <München>: TUM-MATH
9509 D |
| Schlagworte: | |
| Zusammenfassung: | Abstract: "We show how charge distribution effects in MOS transistors are reflected only correctly by models based on the physical properties of the device. Hence one has to consider carefully the impact of modeling to obtain correct results for MOS circuits by numerical simulation. Additionally, the choice of an appropriate integration scheme is essential for both reliable and efficient simulation results. To spotlight these influences, we use a charge pump as an instructive test circuit and discuss a variety of modeling approaches." |
| Beschreibung: | 16 S. graph. Darst. |
Internformat
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| 100 | 1 | |a Denk, Georg |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Modeling and simulating charge sensitive MOS circuits |c G. Denk ; U. Feldmann ; M. Günther |
| 264 | 1 | |a München |c 1995 | |
| 300 | |a 16 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Technische Universität <München>: TUM-MATH |v 9509 D | |
| 520 | 3 | |a Abstract: "We show how charge distribution effects in MOS transistors are reflected only correctly by models based on the physical properties of the device. Hence one has to consider carefully the impact of modeling to obtain correct results for MOS circuits by numerical simulation. Additionally, the choice of an appropriate integration scheme is essential for both reliable and efficient simulation results. To spotlight these influences, we use a charge pump as an instructive test circuit and discuss a variety of modeling approaches." | |
| 650 | 4 | |a Computer-aided design | |
| 650 | 4 | |a Electric discharges | |
| 650 | 4 | |a Metal oxide semiconductors |x Simulation methods | |
| 650 | 4 | |a Transistors |x Simulation methods | |
| 700 | 1 | |a Feldmann, Uwe |e Verfasser |4 aut | |
| 700 | 1 | |a Günther, Michael |e Verfasser |4 aut | |
| 830 | 0 | |a Technische Universität <München>: TUM-MATH |v 9509 D |w (DE-604)BV006186461 |9 9509 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007184109 | ||
Datensatz im Suchindex
| _version_ | 1804125237723267072 |
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| author | Denk, Georg Feldmann, Uwe Günther, Michael |
| author_facet | Denk, Georg Feldmann, Uwe Günther, Michael |
| author_role | aut aut aut |
| author_sort | Denk, Georg |
| author_variant | g d gd u f uf m g mg |
| building | Verbundindex |
| bvnumber | BV010756823 |
| ctrlnum | (OCoLC)38039453 (DE-599)BVBBV010756823 |
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| id | DE-604.BV010756823 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:58:22Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007184109 |
| oclc_num | 38039453 |
| open_access_boolean | |
| owner | DE-12 DE-91G DE-BY-TUM |
| owner_facet | DE-12 DE-91G DE-BY-TUM |
| physical | 16 S. graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| record_format | marc |
| series | Technische Universität <München>: TUM-MATH |
| series2 | Technische Universität <München>: TUM-MATH |
| spelling | Denk, Georg Verfasser aut Modeling and simulating charge sensitive MOS circuits G. Denk ; U. Feldmann ; M. Günther München 1995 16 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Technische Universität <München>: TUM-MATH 9509 D Abstract: "We show how charge distribution effects in MOS transistors are reflected only correctly by models based on the physical properties of the device. Hence one has to consider carefully the impact of modeling to obtain correct results for MOS circuits by numerical simulation. Additionally, the choice of an appropriate integration scheme is essential for both reliable and efficient simulation results. To spotlight these influences, we use a charge pump as an instructive test circuit and discuss a variety of modeling approaches." Computer-aided design Electric discharges Metal oxide semiconductors Simulation methods Transistors Simulation methods Feldmann, Uwe Verfasser aut Günther, Michael Verfasser aut Technische Universität <München>: TUM-MATH 9509 D (DE-604)BV006186461 9509 |
| spellingShingle | Denk, Georg Feldmann, Uwe Günther, Michael Modeling and simulating charge sensitive MOS circuits Technische Universität <München>: TUM-MATH Computer-aided design Electric discharges Metal oxide semiconductors Simulation methods Transistors Simulation methods |
| title | Modeling and simulating charge sensitive MOS circuits |
| title_auth | Modeling and simulating charge sensitive MOS circuits |
| title_exact_search | Modeling and simulating charge sensitive MOS circuits |
| title_full | Modeling and simulating charge sensitive MOS circuits G. Denk ; U. Feldmann ; M. Günther |
| title_fullStr | Modeling and simulating charge sensitive MOS circuits G. Denk ; U. Feldmann ; M. Günther |
| title_full_unstemmed | Modeling and simulating charge sensitive MOS circuits G. Denk ; U. Feldmann ; M. Günther |
| title_short | Modeling and simulating charge sensitive MOS circuits |
| title_sort | modeling and simulating charge sensitive mos circuits |
| topic | Computer-aided design Electric discharges Metal oxide semiconductors Simulation methods Transistors Simulation methods |
| topic_facet | Computer-aided design Electric discharges Metal oxide semiconductors Simulation methods Transistors Simulation methods |
| volume_link | (DE-604)BV006186461 |
| work_keys_str_mv | AT denkgeorg modelingandsimulatingchargesensitivemoscircuits AT feldmannuwe modelingandsimulatingchargesensitivemoscircuits AT gunthermichael modelingandsimulatingchargesensitivemoscircuits |