Heteroepitaxie von InP auf Si (001):
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
1991
|
| Schlagworte: | |
| Beschreibung: | Berlin, Techn., Univ., Diss. |
| Beschreibung: | VII, 181 S. Ill., graph. Darst. |
Internformat
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| 049 | |a DE-355 |a DE-91 | ||
| 084 | |a PHY 658d |2 stub | ||
| 100 | 1 | |a Grundmann, Marius |d 1964- |e Verfasser |0 (DE-588)112740014 |4 aut | |
| 245 | 1 | 0 | |a Heteroepitaxie von InP auf Si (001) |c von Marius Grundmann |
| 264 | 1 | |c 1991 | |
| 300 | |a VII, 181 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Berlin, Techn., Univ., Diss. | ||
| 650 | 0 | 7 | |a Kristallfläche |0 (DE-588)4151344-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heteroepitaxie |0 (DE-588)4260178-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumphosphid |0 (DE-588)4161535-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Heteroepitaxie |0 (DE-588)4260178-2 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
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| 689 | 0 | 3 | |a Indiumphosphid |0 (DE-588)4161535-9 |D s |
| 689 | 0 | 4 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |D s |
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Datensatz im Suchindex
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| author | Grundmann, Marius 1964- |
| author_GND | (DE-588)112740014 |
| author_facet | Grundmann, Marius 1964- |
| author_role | aut |
| author_sort | Grundmann, Marius 1964- |
| author_variant | m g mg |
| building | Verbundindex |
| bvnumber | BV007711072 |
| classification_tum | PHY 658d |
| ctrlnum | (OCoLC)46104004 (DE-599)BVBBV007711072 |
| discipline | Physik |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV007711072 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:08:08Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005065239 |
| oclc_num | 46104004 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR DE-91 DE-BY-TUM |
| owner_facet | DE-355 DE-BY-UBR DE-91 DE-BY-TUM |
| physical | VII, 181 S. Ill., graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| record_format | marc |
| spelling | Grundmann, Marius 1964- Verfasser (DE-588)112740014 aut Heteroepitaxie von InP auf Si (001) von Marius Grundmann 1991 VII, 181 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berlin, Techn., Univ., Diss. Kristallfläche (DE-588)4151344-7 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Heteroepitaxie (DE-588)4260178-2 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Heteroepitaxie (DE-588)4260178-2 s Silicium (DE-588)4077445-4 s Kristallfläche (DE-588)4151344-7 s Indiumphosphid (DE-588)4161535-9 s MOCVD-Verfahren (DE-588)4314628-4 s DE-604 |
| spellingShingle | Grundmann, Marius 1964- Heteroepitaxie von InP auf Si (001) Kristallfläche (DE-588)4151344-7 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heteroepitaxie (DE-588)4260178-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4151344-7 (DE-588)4314628-4 (DE-588)4260178-2 (DE-588)4161535-9 (DE-588)4077445-4 (DE-588)4113937-9 |
| title | Heteroepitaxie von InP auf Si (001) |
| title_auth | Heteroepitaxie von InP auf Si (001) |
| title_exact_search | Heteroepitaxie von InP auf Si (001) |
| title_full | Heteroepitaxie von InP auf Si (001) von Marius Grundmann |
| title_fullStr | Heteroepitaxie von InP auf Si (001) von Marius Grundmann |
| title_full_unstemmed | Heteroepitaxie von InP auf Si (001) von Marius Grundmann |
| title_short | Heteroepitaxie von InP auf Si (001) |
| title_sort | heteroepitaxie von inp auf si 001 |
| topic | Kristallfläche (DE-588)4151344-7 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heteroepitaxie (DE-588)4260178-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Kristallfläche MOCVD-Verfahren Heteroepitaxie Indiumphosphid Silicium Hochschulschrift |
| work_keys_str_mv | AT grundmannmarius heteroepitaxievoninpaufsi001 |