Heteroepitaxie von InP auf Si (001):
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | German |
| Published: |
1991
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| Subjects: | |
| Item Description: | Berlin, Techn., Univ., Diss. |
| Physical Description: | VII, 181 S. Ill., graph. Darst. |
Staff View
MARC
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Record in the Search Index
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| author | Grundmann, Marius 1964- |
| author_GND | (DE-588)112740014 |
| author_facet | Grundmann, Marius 1964- |
| author_role | aut |
| author_sort | Grundmann, Marius 1964- |
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| building | Verbundindex |
| bvnumber | BV007711072 |
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| ctrlnum | (OCoLC)46104004 (DE-599)BVBBV007711072 |
| discipline | Physik |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV007711072 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:08:08Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-005065239 |
| oclc_num | 46104004 |
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| owner | DE-355 DE-BY-UBR DE-91 DE-BY-TUM |
| owner_facet | DE-355 DE-BY-UBR DE-91 DE-BY-TUM |
| physical | VII, 181 S. Ill., graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| record_format | marc |
| spelling | Grundmann, Marius 1964- Verfasser (DE-588)112740014 aut Heteroepitaxie von InP auf Si (001) von Marius Grundmann 1991 VII, 181 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berlin, Techn., Univ., Diss. Kristallfläche (DE-588)4151344-7 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Heteroepitaxie (DE-588)4260178-2 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Heteroepitaxie (DE-588)4260178-2 s Silicium (DE-588)4077445-4 s Kristallfläche (DE-588)4151344-7 s Indiumphosphid (DE-588)4161535-9 s MOCVD-Verfahren (DE-588)4314628-4 s DE-604 |
| spellingShingle | Grundmann, Marius 1964- Heteroepitaxie von InP auf Si (001) Kristallfläche (DE-588)4151344-7 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heteroepitaxie (DE-588)4260178-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4151344-7 (DE-588)4314628-4 (DE-588)4260178-2 (DE-588)4161535-9 (DE-588)4077445-4 (DE-588)4113937-9 |
| title | Heteroepitaxie von InP auf Si (001) |
| title_auth | Heteroepitaxie von InP auf Si (001) |
| title_exact_search | Heteroepitaxie von InP auf Si (001) |
| title_full | Heteroepitaxie von InP auf Si (001) von Marius Grundmann |
| title_fullStr | Heteroepitaxie von InP auf Si (001) von Marius Grundmann |
| title_full_unstemmed | Heteroepitaxie von InP auf Si (001) von Marius Grundmann |
| title_short | Heteroepitaxie von InP auf Si (001) |
| title_sort | heteroepitaxie von inp auf si 001 |
| topic | Kristallfläche (DE-588)4151344-7 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heteroepitaxie (DE-588)4260178-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Kristallfläche MOCVD-Verfahren Heteroepitaxie Indiumphosphid Silicium Hochschulschrift |
| work_keys_str_mv | AT grundmannmarius heteroepitaxievoninpaufsi001 |