Electron-beam, X-ray, and ion-beam technology: submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Bellingham, Wash.
SPIE
1990
|
Schriftenreihe: | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
1263 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | Literaturangaben |
Beschreibung: | VIII, 344 S. Ill., zahlr. graph. Darst. |
ISBN: | 0819403105 |
Internformat
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245 | 1 | 0 | |a Electron-beam, X-ray, and ion-beam technology |b submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California |c Douglas J. Resnick chair/ed. |
264 | 1 | |a Bellingham, Wash. |b SPIE |c 1990 | |
300 | |a VIII, 344 S. |b Ill., zahlr. graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
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490 | 1 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1263 | |
500 | |a Literaturangaben | ||
650 | 4 | |a Ion beam lithography |v Congresses | |
650 | 4 | |a Lithography, Electron beam |v Congresses | |
650 | 4 | |a X-ray lithography |v Congresses | |
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adam_text | ELECTRON-BEAM, X-RAY, AND ION-BEAM TECHNOLOGY:
SUBMICROMETER LITHOGRAPHIES IX
Volume
1263
CONTENTS
Conference Committee
.................................................................vi
Introduction
.........................................................................
vii
SESSION
1
ION-BEAM, LITHOGRAPHY
1263-01
Model for focused ion-beam deposition
J. P. Levin, P. G. Blauner, A. Wagner, IBM Corp
............................................2
1263Ό2
Microstructuring of gold on x-ray masks with focused
Ga1
ion beams
K. P.
Müller,
H.
Petzold,
Fraunhofer-Institut für
Mikrostrukturtechník (FRG)
................... 12
1263-03
Focused ion-beam-induced tungsten deposition for repair of clear defects on
x-ray masks
D. K. Stewart, L. A. Stern, Micrion Corp.; G.
Foss,
G.
P. Hughes, P. K. Govil,
Perkin-Elmer Corp
....................................................................21
1263-04
Advances in mask fabrication and alignment for masked ion-beam lithography
D. P. Stumbo, G. A.
Damm,
D.
W.
Engler, F.
О.
Fong,
S. Sen, J. C.
Wolfe,
Univ. of Houston; J.
N.
Randall, Texas Instruments Inc.; P. E. Mauger, A. R. Shimkunas,
Nanostructures, Inc.;
H. Loschner, Ion Microfabrication
Systems (Austria)
......................35
1263-06
Gate oxide breakdown by focused ion-beam irradiation
Y. Nakashima, H. Morimoto, H. Yamamoto,
S. Kato, Y. Watakabe,
A. Yasuoka, Mitsubishi
Electric Corp. (Japan)
..................................................................44
1263-05
Focused ion-beam modification and patterning of high-Tc superconductors
L. R. Harriott, P. A. Polakos,
С
E.
Rice, P.
L.
Gammel, AT&T Bell Labs.;
W. P. Robinson, C. Hiner, MicroBeam Ine................................................53
1263-35
Focused ion-beam-assisted deposition of tungsten
Y.
Madokoro,
T. Ohnishi, T. Ishitani,
Hitachi, Ltd.
Oapan)
...................................62
1263-07
KeVion-beam
exposed
PMIPK and PPEPK
W. Loong,
N.
Peng,
National
Chiao Tung Univ.
(Taiwan)
....................................73
SESSION
2
X-RAY LITHOGRAPHY I
1263-08
Comparison of
projection
and proximity printings
—
from UV to x-ray
B. J. Lin, IBM Corp
...................................,...............................80
1263-34 20:1
projection soft x-ray lithography using trilevel resist
T. E. Jewell, M. M. Becker, J. E. Bjorkholm, J.
Bokor,
L.
Eichner,
R. R.
Freeman,
W.
M.
Mansfield,
AT&T
Bell Labs.; A. A. MacDowell,
Brookhaven National
Lab.;
M. L. O Malley, E. L.
Raab,
W.
T. Silfvast, L. H. Szeto, D. M. Tennant,
W. K. Waskiewia, D. L.
White,
AT&T
Bell Labs.; D. L.
Windt,
AT&T
Bell
Labs. and Univ.
of Maryland;
O. R.
Wood II, AT&T Bell Labs.;
J. H. Bruning,
CCA Corp
..........................................................................90
1263-10
Defect
printability
for
soft
х
-ray
microiithography
D. W.
Peters,
B. J. Dardzinski, R. D.
Frankéi,
Hampshire
Instruments,
Inc......................
99
1263-11
Target
x-ray source lithography and photolithography mix and match system
S. Hattoti, Nagoya Industrial Science Research Institute (Japan); S. Morita,
Nagoya Univ. (Japan); A. Yoshida, Toyoda Automatic Loom Works, Ltd. (Japan);
T. Nomura, Nippon Seiko K.K. (Japan); T. Tagawa, Meitec Co. (Japan);
H. Yoshikawa, ULVAC Co. (Japan)
..................................................... 110
(continued)
ELECTRON-BEAM, X-RAY, AND ION-BEAM TECHNOLOGY:
SUBMICROMETER LITHOGRAPHIES IX
Volume
1263
1263-12
Electron storage rings as x-ray lithography sources: an overview (Invited Paper)
J. B. Murphy,
Brookhaven
National Lab
................................................. 116
1263-13
Helios: a compact superconducting x-ray source for production lithography
D. E. Andrews, M.
N.
Wilson, A. I. Smith, V.
С
Kempson, A. L. Purvis, R. J. Anderson,
A. S. Bhutta, A. R.
Jorden,
Oxford Instruments Ltd. (UK)
..................................124
1263-14
ALF:
a facility for x-ray lithography
L. G. Lesoine, K. Kukkonen, IBM Corp.; J. A. Leavey, IBM/Thomas J. Watson Research Ctr
.....131
1263-15
Optimizing a synchrotron-based x-ray lithography system for
1С
manufacturing
S.
Kovács,
К.
Speiser,
W.
Thaw,
Grumman Corp.;
R.
W.
Heese,
Brookhaven
National
Lab.......140
SESSION 3
ELECTRON-BEAM LITHOGRAPHY
1263-16
Electron-beam lithography: directions in direct write and mask making
(Invited Paper)
F. J.
Hohn,
IBM/Thomas J. Watson Research Ctr
......................................... 152
1263-17
Chip cluster registration technique for increased throughput in e-beam
direct writing
J. F. Bass, COMSAT Labs.; M. J. Butler, Cambridge Instruments, Ltd. (UK)
...................164
1263-18
Neural network approach to proximity effect corrections in electron-beam
lithography
R. C. Frye, K. D. Cummings, E. A. Rietman,
AT&T
Bell Labs
...............................175
1263-28
Modified maleic anhydride copolymers as
е
-beam resists
S. Malhotra, Motorola Inc.;
В. С
Dems, Y. M.
Ñamaste,
F.
Rodriguez,
S. K.
Obendorf,
Cornell
Univ
........................................................................187
1263-20
Charge-up prevention process for
е
-beam direct writing with multilayer resist
Y.
Tono
-ока,
K. Sakamoto, T. Honda, H. Matsumoto, Y. Iida, NEC Corp. (Japan)
..............199
1263-21
Vacuum
passi va
ted T-gates a new method for fabricating
submicron
gates
D. K.
Atwood, Raytheon Co
...........................................................209
1263-22
Е
-beam direct write of rectangular and mushroom gates for GaAs FETs
Z.
C. Tan, S. E.
Silverman,
Varían
Research Ctr
...........................................217
SESSION
4
X-RAY LITHOGRAPHY II
1263-23
Modeling of thermal stresses and distortions in x-ray masks employing the
embedded absorber structure
N.
I. Maluf,
S. Y. Chou, R. F.
Pease, Stanford Univ
........................................230
1263-24
75-mm diameter diamond x-ray membrane
H. Windischmann, British Petroleum America
............................................241
1263-25
Control of optical and mechanical properties of polycrystalline silicon
membranes for x-ray masks
L. E. Trimble,
G. K. Celler,
J. Frackoviak, AT&T Bell Labs
.................................251
1263-26
X-ray absorbing and mechanical properties of Au-C film for x-ray
mask absorber
H. Fukushima, H. Yarrada, T. Matsui, T. Tagawa, Meitec Corp. 0apan);
S. Monta,
Nagoya Univ. (Japan); S. Hattori, Meitec Corp. (Japan)
............................259
SESSION
5
ELECTRON-BEAM AND X-RAY RESIST TECHNOLOGY
1263-09
Soft x-ray resist characterization: studies with a laser plasma x-ray source
G. D. Kubiak, D. A. Outka, J. M. Zeigler,
Sandia
National Labs
..............................272
ELECTRON-BEAM, X-RAY, AND ION-BEAM TECHNOLOGY:
SUBMICROMETER LITHOGRAPHIES IX
Volume
1263
1263-29
PRIME process: an alternative to multiple-layer resist systems and high
accelerating voltage for
е
-beam lithography
S. V.
Tedesco,
С.
Pierrat, F.
Vinet,
В.
Florin,
M. Lerme,
J. C.
Guibert,
LETl/CENG
(France)................................................................282
1263-30 System-*):
a new positive-tone novalac-based high-resolution electron-beam resist
A. H. Perera, J. P. Krusius, Cornell Univ.
................................................297
SESSION
6
POSTER SESSION: BEAM LITHOGRAPHY
1263-31
Projection
moiré
alignment technique for mix and match lithographic system
D. Sugimoto, S. Kimura, M. Eishima, T. Nomura, Nippon Seiko K.K. (Japan); Y. Uchida,
Aichi Institute of Technology (Japan); S. Hattori, Nagoya Industrial Science Research
Institute (Japan)
.....................................................................306
1263-32
Metrology for gold absorber/silicon membrane x-ray reticles
B. J. Dardzinski, R. A. Grant, D. D. Ball, Hampshire Instruments,
Inc
.........................312
1263-33
Development of radiation-cooled slotted rotating target x-ray source (III)
M.
Asano,
T.
Tagawa, Meitec Corp. (Japan); H. Yoshikawa,
ULV
AC Corp. (Japan);
S. Hattori, Meitec Corp. (Japan)
........................................................322
ADDITIONAL PAPER
1263-27
Advanced chemically amplified resist
H. Takahashi, K. Wakui, D. J. C.
Herr,
J. S. Petersen, Shipley Microelectronics Ltd. Oapan)»
T. H. Fedynyshyn, M.
F. Cronin,
Shipley
Company
Inc.....................................
330
Author
Index.......................................................................343·
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genre_facet | Konferenzschrift 1990 San Jose Calif. |
id | DE-604.BV004302904 |
illustrated | Illustrated |
indexdate | 2024-07-09T16:11:11Z |
institution | BVB |
isbn | 0819403105 |
language | English |
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physical | VIII, 344 S. Ill., zahlr. graph. Darst. |
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spelling | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California Douglas J. Resnick chair/ed. Bellingham, Wash. SPIE 1990 VIII, 344 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1263 Literaturangaben Ion beam lithography Congresses Lithography, Electron beam Congresses X-ray lithography Congresses Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 San Jose Calif. gnd-content Lithografie Halbleitertechnologie (DE-588)4191584-7 s DE-604 Resnick, Douglas J. Sonstige oth Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1263 (DE-604)BV000010887 1263 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002675993&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE Ion beam lithography Congresses Lithography, Electron beam Congresses X-ray lithography Congresses Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd |
subject_GND | (DE-588)4191584-7 (DE-588)1071861417 |
title | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California |
title_auth | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California |
title_exact_search | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California |
title_full | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California Douglas J. Resnick chair/ed. |
title_fullStr | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California Douglas J. Resnick chair/ed. |
title_full_unstemmed | Electron-beam, X-ray, and ion-beam technology submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California Douglas J. Resnick chair/ed. |
title_short | Electron-beam, X-ray, and ion-beam technology |
title_sort | electron beam x ray and ion beam technology submicrometer lithographies ix 7 8 march 1990 san jose california |
title_sub | submicrometer lithographies IX ; 7 - 8 March 1990 San Jose, California |
topic | Ion beam lithography Congresses Lithography, Electron beam Congresses X-ray lithography Congresses Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd |
topic_facet | Ion beam lithography Congresses Lithography, Electron beam Congresses X-ray lithography Congresses Lithografie Halbleitertechnologie Konferenzschrift 1990 San Jose Calif. |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002675993&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV000010887 |
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