Layout techniques for integrated circuit designers /:
This book provides complete step-by-step guidance on the physical implementation of modern integrated circuits, showing you their limitations and guiding you through their common remedies. The book describes today's manufacturing techniques and how they impact design rules. You will understand...
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
[Place of publication not identified] :
Artech House,
2022.
|
Schlagworte: | |
Online-Zugang: | Volltext |
Zusammenfassung: | This book provides complete step-by-step guidance on the physical implementation of modern integrated circuits, showing you their limitations and guiding you through their common remedies. The book describes today's manufacturing techniques and how they impact design rules. You will understand how to build common high frequency devices such as inductors, capacitors and T-coils, and will also learn strategies for dealing with high-speed routing both on package level and on-chip applications. Numerous algorithms implemented in Python are provided to guide you through how extraction, netlist comparison and design rule checkers can be built. The book also helps you unravel complexities that effect circuit design, including signal integrity, matching, IR drop, parasitic impedance and more, saving you time in addressing these effects directly. You will also find detailed descriptions of software tools used to analyze a layout database, showing you how devices can be recognized and connectivity accurately assessed. The book removes much of fog that often hides the inner workings of layout related software tools and helps you better understand: the physics of advanced nodes, high speed techniques used in modern integrated technologies, and the inner working of software used to analyze layout databases. This is an excellent resource for circuit designers implementing a schematic in a layout database, especially those involved in deep submicron designs, as well as layout designers wishing to deepen their understanding of modern layout rules. |
Beschreibung: | 1 online resource |
ISBN: | 9781630819118 1630819115 |
Internformat
MARC
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520 | |a This book provides complete step-by-step guidance on the physical implementation of modern integrated circuits, showing you their limitations and guiding you through their common remedies. The book describes today's manufacturing techniques and how they impact design rules. You will understand how to build common high frequency devices such as inductors, capacitors and T-coils, and will also learn strategies for dealing with high-speed routing both on package level and on-chip applications. Numerous algorithms implemented in Python are provided to guide you through how extraction, netlist comparison and design rule checkers can be built. The book also helps you unravel complexities that effect circuit design, including signal integrity, matching, IR drop, parasitic impedance and more, saving you time in addressing these effects directly. You will also find detailed descriptions of software tools used to analyze a layout database, showing you how devices can be recognized and connectivity accurately assessed. The book removes much of fog that often hides the inner workings of layout related software tools and helps you better understand: the physics of advanced nodes, high speed techniques used in modern integrated technologies, and the inner working of software used to analyze layout databases. This is an excellent resource for circuit designers implementing a schematic in a layout database, especially those involved in deep submicron designs, as well as layout designers wishing to deepen their understanding of modern layout rules. | ||
588 | 0 | |a Title details screen. | |
505 | 0 | |a Intro -- Layout Techniques for Integrated Circuit Designers -- Contents -- Preface -- Chapter 1 Introduction -- Part I: Manufacturing and Physical Layout Techniques -- Chapter 2 Preliminaries -- 2.1 Silicon Manufacturing Basics -- 2.1.1 Basic Overview -- 2.1.2 Epitaxy -- 2.1.3 Oxidation -- 2.1.4 Photolithography -- 2.1.5 Etching -- 2.1.6 Doping -- 2.1.7 Deposition -- 2.1.8 Planarization -- 2.1.9 Wafer Stack-Up -- 2.1.10 Thinning -- 2.1.11 Singulation (Dicing/Cutting) -- 2.1.12 Bonding -- 2.1.13 Bumping -- 2.1.14 Packaging -- 2.1.15 Wafer-Level Probe Test -- 2.1.16 Final Test | |
505 | 8 | |a 2.2 Semiconductor Yield -- 2.2.1 Functional Yield -- 2.2.2 Parametric Yield -- 2.3 Layout Database Formats -- 2.3.1 Calma and GDSII -- 2.3.2 OASIS and Open Access -- 2.4 Schematic Netlist Formats -- 2.4.1 SPICE Format -- 2.4.2 CDL Format -- 2.4.3 Spectre Format -- 2.5 Simulation Output Formats -- 2.6 Formats Used in the Book -- 2.7 Summary -- Exercises -- References -- Chapter 3 Device Formation in Layout -- 3.1 Process Stack-Up -- 3.2 Fundamental Devices -- 3.2.1 Silicide Formation -- 3.2.2 Resistors -- 3.2.3 Maxwell's Equations -- 3.2.4 Capacitors -- 3.2.5 Inductors -- 3.2.6 Transmission Lines | |
505 | 8 | |a 3.2.7 MOSFET Devices -- 3.2.8 Bipolar Transistor Devices -- 3.2.9 Summary of Device Manufacturing -- 3.3 Device Matching -- 3.3.1 Process-Related Causes of Mismatch -- 3.3.2 Layout Strategies to Minimize Mismatch -- 3.3.3 Design Strategies to Reduce the Effect of Mismatch -- 3.4 Manufacturing Challenges: Design Rules -- 3.4.1 Design Rule Derivations -- 3.4.2 Width Rules -- 3.4.3 Spacing Rules -- 3.4.4 Enclosure/Overlap Rules -- 3.4.5 Area Rules -- 3.4.6 Antenna Rules -- 3.4.7 Density Rules -- 3.5 Future Directions -- 3.6 Summary -- Exercises -- References | |
505 | 8 | |a Chapter 4 Layout with Ultrasmall Geometry CMOS Technologies -- 4.1 Small Geometry Effects -- 4.1.1 Thin Metal Effects -- 4.1.2 Strain Effects -- 4.1.3 Well Proximity Effect -- 4.1.4 Substrate Contact Distance Requirements -- 4.1.5 EM and IR Drop -- 4.2 Small Geometry CMOS Flow -- 4.2.1 Strategies to Manage High-Resistance Interconnect -- 4.2.2 Strategies to Manage Parasitic Capacitance -- 4.2.3 Strategies to Manage Parasitic Inductance -- 4.2.4 Overall Parasitic Strategies -- 4.3 Summary -- Exercises -- References -- Chapter 5 Layout with Bipolar Technologies SiGe -- 5.1 Introduction | |
505 | 8 | |a 5.2 Process Flow -- 5.2.1 Physics of SiGe Bipolar Transistors -- 5.2.2 Collector Formation -- 5.2.3 Base Formation -- 5.2.4 Emitter Formation -- 5.2.5 Parasitics of Bipolar Transistors -- 5.2.6 PNP Transistors -- 5.2.7 Future Direction of SiGe transistors -- 5.3 Layout Flow -- 5.3.1 SIGe Technology Metallization -- 5.3.2 Transistor Layout Topologies -- 5.4 Other Technologies -- 5.4.1 InP HBT -- 5.4.2 GaAs HBT -- 5.4.3 Comparison of Different HBT Technologies -- 5.5 Summary -- References -- Chapter 6 Aspects of High-Speed Layout 10-100+ GHz -- 6.1 Single-Ended Transmission Lines On-Chip | |
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adam_text | |
any_adam_object | |
author | Sahrling, Mikael, 1964- |
author_GND | http://id.loc.gov/authorities/names/no2019039843 |
author_facet | Sahrling, Mikael, 1964- |
author_role | aut |
author_sort | Sahrling, Mikael, 1964- |
author_variant | m s ms |
building | Verbundindex |
bvnumber | localFWS |
callnumber-first | T - Technology |
callnumber-label | TK7874 |
callnumber-raw | TK7874.55 |
callnumber-search | TK7874.55 |
callnumber-sort | TK 47874.55 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
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contents | Intro -- Layout Techniques for Integrated Circuit Designers -- Contents -- Preface -- Chapter 1 Introduction -- Part I: Manufacturing and Physical Layout Techniques -- Chapter 2 Preliminaries -- 2.1 Silicon Manufacturing Basics -- 2.1.1 Basic Overview -- 2.1.2 Epitaxy -- 2.1.3 Oxidation -- 2.1.4 Photolithography -- 2.1.5 Etching -- 2.1.6 Doping -- 2.1.7 Deposition -- 2.1.8 Planarization -- 2.1.9 Wafer Stack-Up -- 2.1.10 Thinning -- 2.1.11 Singulation (Dicing/Cutting) -- 2.1.12 Bonding -- 2.1.13 Bumping -- 2.1.14 Packaging -- 2.1.15 Wafer-Level Probe Test -- 2.1.16 Final Test 2.2 Semiconductor Yield -- 2.2.1 Functional Yield -- 2.2.2 Parametric Yield -- 2.3 Layout Database Formats -- 2.3.1 Calma and GDSII -- 2.3.2 OASIS and Open Access -- 2.4 Schematic Netlist Formats -- 2.4.1 SPICE Format -- 2.4.2 CDL Format -- 2.4.3 Spectre Format -- 2.5 Simulation Output Formats -- 2.6 Formats Used in the Book -- 2.7 Summary -- Exercises -- References -- Chapter 3 Device Formation in Layout -- 3.1 Process Stack-Up -- 3.2 Fundamental Devices -- 3.2.1 Silicide Formation -- 3.2.2 Resistors -- 3.2.3 Maxwell's Equations -- 3.2.4 Capacitors -- 3.2.5 Inductors -- 3.2.6 Transmission Lines 3.2.7 MOSFET Devices -- 3.2.8 Bipolar Transistor Devices -- 3.2.9 Summary of Device Manufacturing -- 3.3 Device Matching -- 3.3.1 Process-Related Causes of Mismatch -- 3.3.2 Layout Strategies to Minimize Mismatch -- 3.3.3 Design Strategies to Reduce the Effect of Mismatch -- 3.4 Manufacturing Challenges: Design Rules -- 3.4.1 Design Rule Derivations -- 3.4.2 Width Rules -- 3.4.3 Spacing Rules -- 3.4.4 Enclosure/Overlap Rules -- 3.4.5 Area Rules -- 3.4.6 Antenna Rules -- 3.4.7 Density Rules -- 3.5 Future Directions -- 3.6 Summary -- Exercises -- References Chapter 4 Layout with Ultrasmall Geometry CMOS Technologies -- 4.1 Small Geometry Effects -- 4.1.1 Thin Metal Effects -- 4.1.2 Strain Effects -- 4.1.3 Well Proximity Effect -- 4.1.4 Substrate Contact Distance Requirements -- 4.1.5 EM and IR Drop -- 4.2 Small Geometry CMOS Flow -- 4.2.1 Strategies to Manage High-Resistance Interconnect -- 4.2.2 Strategies to Manage Parasitic Capacitance -- 4.2.3 Strategies to Manage Parasitic Inductance -- 4.2.4 Overall Parasitic Strategies -- 4.3 Summary -- Exercises -- References -- Chapter 5 Layout with Bipolar Technologies SiGe -- 5.1 Introduction 5.2 Process Flow -- 5.2.1 Physics of SiGe Bipolar Transistors -- 5.2.2 Collector Formation -- 5.2.3 Base Formation -- 5.2.4 Emitter Formation -- 5.2.5 Parasitics of Bipolar Transistors -- 5.2.6 PNP Transistors -- 5.2.7 Future Direction of SiGe transistors -- 5.3 Layout Flow -- 5.3.1 SIGe Technology Metallization -- 5.3.2 Transistor Layout Topologies -- 5.4 Other Technologies -- 5.4.1 InP HBT -- 5.4.2 GaAs HBT -- 5.4.3 Comparison of Different HBT Technologies -- 5.5 Summary -- References -- Chapter 6 Aspects of High-Speed Layout 10-100+ GHz -- 6.1 Single-Ended Transmission Lines On-Chip |
ctrlnum | (OCoLC)1343120029 |
dewey-full | 621.3815 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815 |
dewey-search | 621.3815 |
dewey-sort | 3621.3815 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
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id | ZDB-4-EBA-on1343120029 |
illustrated | Not Illustrated |
indexdate | 2024-11-27T13:30:37Z |
institution | BVB |
isbn | 9781630819118 1630819115 |
language | English |
oclc_num | 1343120029 |
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spelling | Sahrling, Mikael, 1964- author. https://id.oclc.org/worldcat/entity/E39PCjqBPY8vv9Yp3PJVHHGpGd http://id.loc.gov/authorities/names/no2019039843 Layout techniques for integrated circuit designers / Mikael Sahrling. [Place of publication not identified] : Artech House, 2022. 1 online resource text txt rdacontent computer c rdamedia online resource cr rdacarrier This book provides complete step-by-step guidance on the physical implementation of modern integrated circuits, showing you their limitations and guiding you through their common remedies. The book describes today's manufacturing techniques and how they impact design rules. You will understand how to build common high frequency devices such as inductors, capacitors and T-coils, and will also learn strategies for dealing with high-speed routing both on package level and on-chip applications. Numerous algorithms implemented in Python are provided to guide you through how extraction, netlist comparison and design rule checkers can be built. The book also helps you unravel complexities that effect circuit design, including signal integrity, matching, IR drop, parasitic impedance and more, saving you time in addressing these effects directly. You will also find detailed descriptions of software tools used to analyze a layout database, showing you how devices can be recognized and connectivity accurately assessed. The book removes much of fog that often hides the inner workings of layout related software tools and helps you better understand: the physics of advanced nodes, high speed techniques used in modern integrated technologies, and the inner working of software used to analyze layout databases. This is an excellent resource for circuit designers implementing a schematic in a layout database, especially those involved in deep submicron designs, as well as layout designers wishing to deepen their understanding of modern layout rules. Title details screen. Intro -- Layout Techniques for Integrated Circuit Designers -- Contents -- Preface -- Chapter 1 Introduction -- Part I: Manufacturing and Physical Layout Techniques -- Chapter 2 Preliminaries -- 2.1 Silicon Manufacturing Basics -- 2.1.1 Basic Overview -- 2.1.2 Epitaxy -- 2.1.3 Oxidation -- 2.1.4 Photolithography -- 2.1.5 Etching -- 2.1.6 Doping -- 2.1.7 Deposition -- 2.1.8 Planarization -- 2.1.9 Wafer Stack-Up -- 2.1.10 Thinning -- 2.1.11 Singulation (Dicing/Cutting) -- 2.1.12 Bonding -- 2.1.13 Bumping -- 2.1.14 Packaging -- 2.1.15 Wafer-Level Probe Test -- 2.1.16 Final Test 2.2 Semiconductor Yield -- 2.2.1 Functional Yield -- 2.2.2 Parametric Yield -- 2.3 Layout Database Formats -- 2.3.1 Calma and GDSII -- 2.3.2 OASIS and Open Access -- 2.4 Schematic Netlist Formats -- 2.4.1 SPICE Format -- 2.4.2 CDL Format -- 2.4.3 Spectre Format -- 2.5 Simulation Output Formats -- 2.6 Formats Used in the Book -- 2.7 Summary -- Exercises -- References -- Chapter 3 Device Formation in Layout -- 3.1 Process Stack-Up -- 3.2 Fundamental Devices -- 3.2.1 Silicide Formation -- 3.2.2 Resistors -- 3.2.3 Maxwell's Equations -- 3.2.4 Capacitors -- 3.2.5 Inductors -- 3.2.6 Transmission Lines 3.2.7 MOSFET Devices -- 3.2.8 Bipolar Transistor Devices -- 3.2.9 Summary of Device Manufacturing -- 3.3 Device Matching -- 3.3.1 Process-Related Causes of Mismatch -- 3.3.2 Layout Strategies to Minimize Mismatch -- 3.3.3 Design Strategies to Reduce the Effect of Mismatch -- 3.4 Manufacturing Challenges: Design Rules -- 3.4.1 Design Rule Derivations -- 3.4.2 Width Rules -- 3.4.3 Spacing Rules -- 3.4.4 Enclosure/Overlap Rules -- 3.4.5 Area Rules -- 3.4.6 Antenna Rules -- 3.4.7 Density Rules -- 3.5 Future Directions -- 3.6 Summary -- Exercises -- References Chapter 4 Layout with Ultrasmall Geometry CMOS Technologies -- 4.1 Small Geometry Effects -- 4.1.1 Thin Metal Effects -- 4.1.2 Strain Effects -- 4.1.3 Well Proximity Effect -- 4.1.4 Substrate Contact Distance Requirements -- 4.1.5 EM and IR Drop -- 4.2 Small Geometry CMOS Flow -- 4.2.1 Strategies to Manage High-Resistance Interconnect -- 4.2.2 Strategies to Manage Parasitic Capacitance -- 4.2.3 Strategies to Manage Parasitic Inductance -- 4.2.4 Overall Parasitic Strategies -- 4.3 Summary -- Exercises -- References -- Chapter 5 Layout with Bipolar Technologies SiGe -- 5.1 Introduction 5.2 Process Flow -- 5.2.1 Physics of SiGe Bipolar Transistors -- 5.2.2 Collector Formation -- 5.2.3 Base Formation -- 5.2.4 Emitter Formation -- 5.2.5 Parasitics of Bipolar Transistors -- 5.2.6 PNP Transistors -- 5.2.7 Future Direction of SiGe transistors -- 5.3 Layout Flow -- 5.3.1 SIGe Technology Metallization -- 5.3.2 Transistor Layout Topologies -- 5.4 Other Technologies -- 5.4.1 InP HBT -- 5.4.2 GaAs HBT -- 5.4.3 Comparison of Different HBT Technologies -- 5.5 Summary -- References -- Chapter 6 Aspects of High-Speed Layout 10-100+ GHz -- 6.1 Single-Ended Transmission Lines On-Chip Integrated circuit layout. http://id.loc.gov/authorities/subjects/sh2001008431 Circuits intégrés Implantation. Integrated circuit layout fast Integrated Circuits Technology & Engineering Print version: 1630819107 9781630819101 (OCoLC)1323246598 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=3372234 Volltext |
spellingShingle | Sahrling, Mikael, 1964- Layout techniques for integrated circuit designers / Intro -- Layout Techniques for Integrated Circuit Designers -- Contents -- Preface -- Chapter 1 Introduction -- Part I: Manufacturing and Physical Layout Techniques -- Chapter 2 Preliminaries -- 2.1 Silicon Manufacturing Basics -- 2.1.1 Basic Overview -- 2.1.2 Epitaxy -- 2.1.3 Oxidation -- 2.1.4 Photolithography -- 2.1.5 Etching -- 2.1.6 Doping -- 2.1.7 Deposition -- 2.1.8 Planarization -- 2.1.9 Wafer Stack-Up -- 2.1.10 Thinning -- 2.1.11 Singulation (Dicing/Cutting) -- 2.1.12 Bonding -- 2.1.13 Bumping -- 2.1.14 Packaging -- 2.1.15 Wafer-Level Probe Test -- 2.1.16 Final Test 2.2 Semiconductor Yield -- 2.2.1 Functional Yield -- 2.2.2 Parametric Yield -- 2.3 Layout Database Formats -- 2.3.1 Calma and GDSII -- 2.3.2 OASIS and Open Access -- 2.4 Schematic Netlist Formats -- 2.4.1 SPICE Format -- 2.4.2 CDL Format -- 2.4.3 Spectre Format -- 2.5 Simulation Output Formats -- 2.6 Formats Used in the Book -- 2.7 Summary -- Exercises -- References -- Chapter 3 Device Formation in Layout -- 3.1 Process Stack-Up -- 3.2 Fundamental Devices -- 3.2.1 Silicide Formation -- 3.2.2 Resistors -- 3.2.3 Maxwell's Equations -- 3.2.4 Capacitors -- 3.2.5 Inductors -- 3.2.6 Transmission Lines 3.2.7 MOSFET Devices -- 3.2.8 Bipolar Transistor Devices -- 3.2.9 Summary of Device Manufacturing -- 3.3 Device Matching -- 3.3.1 Process-Related Causes of Mismatch -- 3.3.2 Layout Strategies to Minimize Mismatch -- 3.3.3 Design Strategies to Reduce the Effect of Mismatch -- 3.4 Manufacturing Challenges: Design Rules -- 3.4.1 Design Rule Derivations -- 3.4.2 Width Rules -- 3.4.3 Spacing Rules -- 3.4.4 Enclosure/Overlap Rules -- 3.4.5 Area Rules -- 3.4.6 Antenna Rules -- 3.4.7 Density Rules -- 3.5 Future Directions -- 3.6 Summary -- Exercises -- References Chapter 4 Layout with Ultrasmall Geometry CMOS Technologies -- 4.1 Small Geometry Effects -- 4.1.1 Thin Metal Effects -- 4.1.2 Strain Effects -- 4.1.3 Well Proximity Effect -- 4.1.4 Substrate Contact Distance Requirements -- 4.1.5 EM and IR Drop -- 4.2 Small Geometry CMOS Flow -- 4.2.1 Strategies to Manage High-Resistance Interconnect -- 4.2.2 Strategies to Manage Parasitic Capacitance -- 4.2.3 Strategies to Manage Parasitic Inductance -- 4.2.4 Overall Parasitic Strategies -- 4.3 Summary -- Exercises -- References -- Chapter 5 Layout with Bipolar Technologies SiGe -- 5.1 Introduction 5.2 Process Flow -- 5.2.1 Physics of SiGe Bipolar Transistors -- 5.2.2 Collector Formation -- 5.2.3 Base Formation -- 5.2.4 Emitter Formation -- 5.2.5 Parasitics of Bipolar Transistors -- 5.2.6 PNP Transistors -- 5.2.7 Future Direction of SiGe transistors -- 5.3 Layout Flow -- 5.3.1 SIGe Technology Metallization -- 5.3.2 Transistor Layout Topologies -- 5.4 Other Technologies -- 5.4.1 InP HBT -- 5.4.2 GaAs HBT -- 5.4.3 Comparison of Different HBT Technologies -- 5.5 Summary -- References -- Chapter 6 Aspects of High-Speed Layout 10-100+ GHz -- 6.1 Single-Ended Transmission Lines On-Chip Integrated circuit layout. http://id.loc.gov/authorities/subjects/sh2001008431 Circuits intégrés Implantation. Integrated circuit layout fast |
subject_GND | http://id.loc.gov/authorities/subjects/sh2001008431 |
title | Layout techniques for integrated circuit designers / |
title_auth | Layout techniques for integrated circuit designers / |
title_exact_search | Layout techniques for integrated circuit designers / |
title_full | Layout techniques for integrated circuit designers / Mikael Sahrling. |
title_fullStr | Layout techniques for integrated circuit designers / Mikael Sahrling. |
title_full_unstemmed | Layout techniques for integrated circuit designers / Mikael Sahrling. |
title_short | Layout techniques for integrated circuit designers / |
title_sort | layout techniques for integrated circuit designers |
topic | Integrated circuit layout. http://id.loc.gov/authorities/subjects/sh2001008431 Circuits intégrés Implantation. Integrated circuit layout fast |
topic_facet | Integrated circuit layout. Circuits intégrés Implantation. Integrated circuit layout |
url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=3372234 |
work_keys_str_mv | AT sahrlingmikael layouttechniquesforintegratedcircuitdesigners |