AlN base layers for UV LEDs:
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English German |
Veröffentlicht: |
Göttingen :
Cuvillier Verlag,
2021.
|
Schriftenreihe: | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ;
Bd. 66. |
Schlagworte: | |
Online-Zugang: | DE-862 DE-863 |
Beschreibung: | Description based upon print version of record. |
Beschreibung: | 1 online resource (157 p.). |
Bibliographie: | Includes bibliographical references and index. |
ISBN: | 373696451X 9783736964518 |
Internformat
MARC
LEADER | 00000cam a2200000Mu 4500 | ||
---|---|---|---|
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003 | OCoLC | ||
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006 | m o d | ||
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049 | |a MAIN | ||
100 | 1 | |a Walde, Sebastian, |e author. | |
245 | 1 | 0 | |a AlN base layers for UV LEDs |h [electronic resource]. |
260 | |a Göttingen : |b Cuvillier Verlag, |c 2021. | ||
300 | |a 1 online resource (157 p.). | ||
490 | 1 | |a Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; |v Band 66 | |
500 | |a Description based upon print version of record. | ||
504 | |a Includes bibliographical references and index. | ||
505 | 0 | |a Intro -- Introduction and Motivation -- CHAPTER 1 Experimental methods -- 1.1 Heteroepitaxial growth of AlN on sapphire -- 1.2 AlN templates as UV LED base layers -- 1.3 State of research -- CHAPTER 2 Experimental methods -- 2.1 Sample fabrication -- 2.2 Characterisation methods -- 2.3 Method for light extraction simulations -- CHAPTER 3 High temperature annealing of MOVPE grown AlN -- 3.1 Annealing of 350 nm thick AlN -- 3.2 Annealing of layer thickness series -- 3.3 Variation of the annealing parameters -- CHAPTER 4 Nanopatterned sapphire substrates -- 4.1 Light extraction simulations of nanopatternedinterface -- 4.2 Growth on sapphire nanopillars -- 4.3 Growth on sapphire nanoholes -- CHAPTER 5 UVC LED performance on the developed AlN templates -- Conclusion -- APPENDIX A. | |
650 | 0 | |a Electronic apparatus and appliances |x Dissertations. | |
650 | 0 | |a Light emitting diodes |x Dissertations. | |
650 | 0 | |a Nitrides |x Electric properties |x Dissertations. | |
650 | 6 | |a Diodes électroluminescentes |x Thèses et écrits académiques. | |
650 | 7 | |a Electronic apparatus and appliances |2 fast | |
650 | 7 | |a Light emitting diodes |2 fast | |
655 | 7 | |a Academic theses |2 fast | |
758 | |i has work: |a AlN base layers for UV LEDs (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFRg3QD6Mx43Tm8ytxmTVy |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
776 | 0 | 8 | |i Print version: |a Walde, Sebastian |t AlN base layers for UV LEDs |d Göttingen : Cuvillier Verlag,c2021 |z 9783736974517 |
830 | 0 | |a Innovationen mit Mikrowellen und Licht. |p Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; |v Bd. 66. | |
966 | 4 | 0 | |l DE-862 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2959118 |3 Volltext |
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Datensatz im Suchindex
DE-BY-FWS_katkey | ZDB-4-EBA-on1259323924 |
---|---|
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adam_text | |
any_adam_object | |
author | Walde, Sebastian |
author_facet | Walde, Sebastian |
author_role | aut |
author_sort | Walde, Sebastian |
author_variant | s w sw |
building | Verbundindex |
bvnumber | localFWS |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.89.L53 |
callnumber-search | TK7871.89.L53 |
callnumber-sort | TK 47871.89 L53 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
collection | ZDB-4-EBA |
contents | Intro -- Introduction and Motivation -- CHAPTER 1 Experimental methods -- 1.1 Heteroepitaxial growth of AlN on sapphire -- 1.2 AlN templates as UV LED base layers -- 1.3 State of research -- CHAPTER 2 Experimental methods -- 2.1 Sample fabrication -- 2.2 Characterisation methods -- 2.3 Method for light extraction simulations -- CHAPTER 3 High temperature annealing of MOVPE grown AlN -- 3.1 Annealing of 350 nm thick AlN -- 3.2 Annealing of layer thickness series -- 3.3 Variation of the annealing parameters -- CHAPTER 4 Nanopatterned sapphire substrates -- 4.1 Light extraction simulations of nanopatternedinterface -- 4.2 Growth on sapphire nanopillars -- 4.3 Growth on sapphire nanoholes -- CHAPTER 5 UVC LED performance on the developed AlN templates -- Conclusion -- APPENDIX A. |
ctrlnum | (OCoLC)1259323924 |
dewey-full | 621.3815/22 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/22 |
dewey-search | 621.3815/22 |
dewey-sort | 3621.3815 222 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
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indexdate | 2025-03-18T14:26:25Z |
institution | BVB |
isbn | 373696451X 9783736964518 |
language | English German |
oclc_num | 1259323924 |
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physical | 1 online resource (157 p.). |
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publisher | Cuvillier Verlag, |
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series | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; |
series2 | Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; |
spelling | Walde, Sebastian, author. AlN base layers for UV LEDs [electronic resource]. Göttingen : Cuvillier Verlag, 2021. 1 online resource (157 p.). Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; Band 66 Description based upon print version of record. Includes bibliographical references and index. Intro -- Introduction and Motivation -- CHAPTER 1 Experimental methods -- 1.1 Heteroepitaxial growth of AlN on sapphire -- 1.2 AlN templates as UV LED base layers -- 1.3 State of research -- CHAPTER 2 Experimental methods -- 2.1 Sample fabrication -- 2.2 Characterisation methods -- 2.3 Method for light extraction simulations -- CHAPTER 3 High temperature annealing of MOVPE grown AlN -- 3.1 Annealing of 350 nm thick AlN -- 3.2 Annealing of layer thickness series -- 3.3 Variation of the annealing parameters -- CHAPTER 4 Nanopatterned sapphire substrates -- 4.1 Light extraction simulations of nanopatternedinterface -- 4.2 Growth on sapphire nanopillars -- 4.3 Growth on sapphire nanoholes -- CHAPTER 5 UVC LED performance on the developed AlN templates -- Conclusion -- APPENDIX A. Electronic apparatus and appliances Dissertations. Light emitting diodes Dissertations. Nitrides Electric properties Dissertations. Diodes électroluminescentes Thèses et écrits académiques. Electronic apparatus and appliances fast Light emitting diodes fast Academic theses fast has work: AlN base layers for UV LEDs (Text) https://id.oclc.org/worldcat/entity/E39PCFRg3QD6Mx43Tm8ytxmTVy https://id.oclc.org/worldcat/ontology/hasWork Print version: Walde, Sebastian AlN base layers for UV LEDs Göttingen : Cuvillier Verlag,c2021 9783736974517 Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; Bd. 66. |
spellingShingle | Walde, Sebastian AlN base layers for UV LEDs Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; Intro -- Introduction and Motivation -- CHAPTER 1 Experimental methods -- 1.1 Heteroepitaxial growth of AlN on sapphire -- 1.2 AlN templates as UV LED base layers -- 1.3 State of research -- CHAPTER 2 Experimental methods -- 2.1 Sample fabrication -- 2.2 Characterisation methods -- 2.3 Method for light extraction simulations -- CHAPTER 3 High temperature annealing of MOVPE grown AlN -- 3.1 Annealing of 350 nm thick AlN -- 3.2 Annealing of layer thickness series -- 3.3 Variation of the annealing parameters -- CHAPTER 4 Nanopatterned sapphire substrates -- 4.1 Light extraction simulations of nanopatternedinterface -- 4.2 Growth on sapphire nanopillars -- 4.3 Growth on sapphire nanoholes -- CHAPTER 5 UVC LED performance on the developed AlN templates -- Conclusion -- APPENDIX A. Electronic apparatus and appliances Dissertations. Light emitting diodes Dissertations. Nitrides Electric properties Dissertations. Diodes électroluminescentes Thèses et écrits académiques. Electronic apparatus and appliances fast Light emitting diodes fast |
title | AlN base layers for UV LEDs |
title_auth | AlN base layers for UV LEDs |
title_exact_search | AlN base layers for UV LEDs |
title_full | AlN base layers for UV LEDs [electronic resource]. |
title_fullStr | AlN base layers for UV LEDs [electronic resource]. |
title_full_unstemmed | AlN base layers for UV LEDs [electronic resource]. |
title_short | AlN base layers for UV LEDs |
title_sort | aln base layers for uv leds |
topic | Electronic apparatus and appliances Dissertations. Light emitting diodes Dissertations. Nitrides Electric properties Dissertations. Diodes électroluminescentes Thèses et écrits académiques. Electronic apparatus and appliances fast Light emitting diodes fast |
topic_facet | Electronic apparatus and appliances Dissertations. Light emitting diodes Dissertations. Nitrides Electric properties Dissertations. Diodes électroluminescentes Thèses et écrits académiques. Electronic apparatus and appliances Light emitting diodes Academic theses |
work_keys_str_mv | AT waldesebastian alnbaselayersforuvleds |