Parameter extraction and complex nonlinear transistor models /:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston :
Artech House,
[2020]
|
| Schriftenreihe: | Artech House microwave library.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | 1 online resource : illustrations |
| Bibliographie: | Includes bibliographical references and index |
| ISBN: | 9781630817459 1630817457 |
Internformat
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | ZDB-4-EBA-on1140200295 | ||
| 003 | OCoLC | ||
| 005 | 20241004212047.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 200116s2020 maua ob 001 0 eng d | ||
| 040 | |a STF |b eng |e rda |e pn |c STF |d CUV |d YDX |d UKAHL |d OCLCF |d EBLCP |d N$T |d VRC |d OCLCO |d IEEEE |d VT2 |d OCLCQ |d OCLCO |d UPM |d OCLCQ |d OCLCO |d TMA |d OCLCL |d OCLCQ |d OCLCO |d SXB |d OCLCQ | ||
| 019 | |a 1151196130 |a 1262682480 |a 1272923379 | ||
| 020 | |a 9781630817459 |q (electronic bk.) | ||
| 020 | |a 1630817457 |q (electronic bk.) | ||
| 020 | |z 9781630817442 | ||
| 020 | |z 1630817449 | ||
| 035 | |a (OCoLC)1140200295 |z (OCoLC)1151196130 |z (OCoLC)1262682480 |z (OCoLC)1272923379 | ||
| 050 | 4 | |a TK7876 | |
| 082 | 7 | |a 621.381/3 |2 23 | |
| 049 | |a MAIN | ||
| 100 | 1 | |a Kompa, Günter, |e author. | |
| 245 | 1 | 0 | |a Parameter extraction and complex nonlinear transistor models / |c Günter Kompa. |
| 264 | 1 | |a Boston : |b Artech House, |c [2020] | |
| 300 | |a 1 online resource : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Artech House microwave library | |
| 588 | 0 | |a Online resource; title from PDF title page (viewed on March 09, 2020) | |
| 504 | |a Includes bibliographical references and index | ||
| 505 | 0 | |a Parameter Extraction and Complex Nonlinear Transistor Models -- Contents -- Preface -- Chapter 1 Introduction -- REFERENCES -- Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT -- 2.1 INTRODUCTION -- 2.2 EVOLUTION OF FET DEVICES -- 2.2.1 Field-Effect Transistors -- 2.2.2 Heterojunction Bipolar Transistors -- 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING -- 2.3.1 MESFET -- 2.3.2 HEMT -- 2.3.3 HBT -- 2.5 SUMMARY -- REFERENCES -- Chapter 3 Classification of Transistor Models -- 3.1 INTRODUCTION -- 3.2 PHYSICAL MODELS -- 3.2.1 Numerical Physical Models -- 3.2.2 Analytical Physical Models | |
| 505 | 8 | |a 3.3 EMPIRICAL MODELS -- 3.4 EXPERIMENTAL MODELS -- 3.5 BEHAVIORAL MODELS -- 3.5.1 ANN-Based Models -- 3.5.2 X-Parameter-Based Models -- 3.6 SUMMARY -- REFERENCES -- Chapter 4 Classical Shockley Model and Enhanced Modifications -- 4.1 INTRODUCTION -- 4.2 LONG-CHANNEL (SHOCKLEY) MODEL -- 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS -- 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION -- 4.5 TWO-REGION MODEL -- 4.6 SHORT-CHANNEL SATURATION MODEL -- 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS -- 4.7.1 Transconductance -- 4.7.2 Gate-Source Capacitance | |
| 505 | 8 | |a 4.7.3 MESFET and HEMT Transconductance Comparison -- 4.8 PROBLEMS AND SOLUTIONS -- 4.9 SUMMARY -- REFERENCES -- Chapter 5 Extrinsic Transistor Network at DC -- 5.1 INTRODUCTION -- 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING -- 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES -- 5.4 REGRIDDING ISSUES WITH MATLAB -- 5.5 SUMMARY -- REFERENCES -- Chapter 6 Estimation of Model Element Values Based on Device Physical Data -- 6.1 INTRODUCTION -- 6.2 RESISTANCES -- 6.2.1 Ohmic Contact Resistance -- 6.2.2 Series Resistances -- 6.2.3 Gate Resistance, Gate Inductance | |
| 505 | 8 | |a 6.2.4 Gate Charging Resistance -- 6.3 CONDUCTANCES -- 6.3.1 Transconductance -- 6.3.2 Channel Conductance -- 6.4 CAPACITANCES -- 6.4.1 Gate-Source Capacitance -- 6.4.2 Gate-Drain Capacitance -- 6.4.3 Drain-Source Capacitance -- 6.5 DELAY TIME -- 6.6 CONTACT AND INTERCONNECT STRUCTURES -- 6.6.1 Device Contacting Pads -- 6.6.2 Bondwire Inductance -- 6.6.3 Via Hole Inductance -- 6.6.4 Air Bridge -- 6.6.5 Field Plate -- 6.7 SUMMARY -- REFERENCES -- Chapter 7 Small-Signal Transistor Model Complexity -- 7.1 INTRODUCTION -- 7.2 SMALL-SIGNAL TRANSISTOR OPERATION | |
| 505 | 8 | |a 7.2.1 Two-Port Y-Matrix Transistor Model -- 7.2.2 Generic Extrinsic Transistor Pi-Model -- 7.3 TRANSISTOR MODEL COMPLEXITY -- 7.3.1 Small-Periphery Devices -- 7.3.2 Large-Periphery Devices -- 7.3.3 High-Resistivity Silicon Substrates -- 7.4 SUMMARY -- REFERENCES -- Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements -- 8.1 INTRODUCTION -- 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS -- 8.2.1 Generic Transconductance and Output Conductance -- 8.2.2 Generic Capacitances -- 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS | |
| 505 | 8 | |a 8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS | |
| 650 | 0 | |a Microwave devices |x Mathematical models. | |
| 650 | 6 | |a Dispositifs à micro-ondes |x Modèles mathématiques. | |
| 650 | 7 | |a Microwave devices |x Mathematical models |2 fast | |
| 653 | |a Technology, Engineering, Agriculture | ||
| 653 | |a Technologie, Ingenieurswissenschaft, Landwirtschaft | ||
| 653 | |a Technologie, ingénierie et agriculture | ||
| 653 | |a Electronics & communications engineering | ||
| 653 | |a Elektronik, Nachrichtentechnik | ||
| 653 | |a Ingénierie électronique et technologie des communications | ||
| 653 | |a Electronics engineering | ||
| 653 | |a Elektronik | ||
| 653 | |a Génie électronique | ||
| 653 | |a Microwave technology | ||
| 653 | |a Mikrowellentechnik | ||
| 653 | |a Technologie des micro-ondes | ||
| 758 | |i has work: |a Parameter extraction and complex nonlinear transistor models (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFMh3c9rVrjvvHv9HybG9C |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Kompa, Günter |t Parameter Extraction and Complex Nonlinear Transistor Models |d Norwood : Artech House,c2019 |z 9781630817442 |
| 830 | 0 | |a Artech House microwave library. |0 http://id.loc.gov/authorities/names/n42002465 | |
| 856 | 4 | 0 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2450266 |3 Volltext |
| 938 | |a Askews and Holts Library Services |b ASKH |n AH37370433 | ||
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL6176645 | ||
| 938 | |a EBSCOhost |b EBSC |n 2450266 | ||
| 938 | |a IEEE |b IEEE |n 9098794 | ||
| 938 | |a YBP Library Services |b YANK |n 16736914 | ||
| 994 | |a 92 |b GEBAY | ||
| 912 | |a ZDB-4-EBA | ||
| 049 | |a DE-863 | ||
Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-on1140200295 |
|---|---|
| _version_ | 1816882510733246464 |
| adam_text | |
| any_adam_object | |
| author | Kompa, Günter |
| author_facet | Kompa, Günter |
| author_role | aut |
| author_sort | Kompa, Günter |
| author_variant | g k gk |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | T - Technology |
| callnumber-label | TK7876 |
| callnumber-raw | TK7876 |
| callnumber-search | TK7876 |
| callnumber-sort | TK 47876 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | Parameter Extraction and Complex Nonlinear Transistor Models -- Contents -- Preface -- Chapter 1 Introduction -- REFERENCES -- Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT -- 2.1 INTRODUCTION -- 2.2 EVOLUTION OF FET DEVICES -- 2.2.1 Field-Effect Transistors -- 2.2.2 Heterojunction Bipolar Transistors -- 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING -- 2.3.1 MESFET -- 2.3.2 HEMT -- 2.3.3 HBT -- 2.5 SUMMARY -- REFERENCES -- Chapter 3 Classification of Transistor Models -- 3.1 INTRODUCTION -- 3.2 PHYSICAL MODELS -- 3.2.1 Numerical Physical Models -- 3.2.2 Analytical Physical Models 3.3 EMPIRICAL MODELS -- 3.4 EXPERIMENTAL MODELS -- 3.5 BEHAVIORAL MODELS -- 3.5.1 ANN-Based Models -- 3.5.2 X-Parameter-Based Models -- 3.6 SUMMARY -- REFERENCES -- Chapter 4 Classical Shockley Model and Enhanced Modifications -- 4.1 INTRODUCTION -- 4.2 LONG-CHANNEL (SHOCKLEY) MODEL -- 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS -- 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION -- 4.5 TWO-REGION MODEL -- 4.6 SHORT-CHANNEL SATURATION MODEL -- 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS -- 4.7.1 Transconductance -- 4.7.2 Gate-Source Capacitance 4.7.3 MESFET and HEMT Transconductance Comparison -- 4.8 PROBLEMS AND SOLUTIONS -- 4.9 SUMMARY -- REFERENCES -- Chapter 5 Extrinsic Transistor Network at DC -- 5.1 INTRODUCTION -- 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING -- 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES -- 5.4 REGRIDDING ISSUES WITH MATLAB -- 5.5 SUMMARY -- REFERENCES -- Chapter 6 Estimation of Model Element Values Based on Device Physical Data -- 6.1 INTRODUCTION -- 6.2 RESISTANCES -- 6.2.1 Ohmic Contact Resistance -- 6.2.2 Series Resistances -- 6.2.3 Gate Resistance, Gate Inductance 6.2.4 Gate Charging Resistance -- 6.3 CONDUCTANCES -- 6.3.1 Transconductance -- 6.3.2 Channel Conductance -- 6.4 CAPACITANCES -- 6.4.1 Gate-Source Capacitance -- 6.4.2 Gate-Drain Capacitance -- 6.4.3 Drain-Source Capacitance -- 6.5 DELAY TIME -- 6.6 CONTACT AND INTERCONNECT STRUCTURES -- 6.6.1 Device Contacting Pads -- 6.6.2 Bondwire Inductance -- 6.6.3 Via Hole Inductance -- 6.6.4 Air Bridge -- 6.6.5 Field Plate -- 6.7 SUMMARY -- REFERENCES -- Chapter 7 Small-Signal Transistor Model Complexity -- 7.1 INTRODUCTION -- 7.2 SMALL-SIGNAL TRANSISTOR OPERATION 7.2.1 Two-Port Y-Matrix Transistor Model -- 7.2.2 Generic Extrinsic Transistor Pi-Model -- 7.3 TRANSISTOR MODEL COMPLEXITY -- 7.3.1 Small-Periphery Devices -- 7.3.2 Large-Periphery Devices -- 7.3.3 High-Resistivity Silicon Substrates -- 7.4 SUMMARY -- REFERENCES -- Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements -- 8.1 INTRODUCTION -- 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS -- 8.2.1 Generic Transconductance and Output Conductance -- 8.2.2 Generic Capacitances -- 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS 8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS |
| ctrlnum | (OCoLC)1140200295 |
| dewey-full | 621.381/3 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/3 |
| dewey-search | 621.381/3 |
| dewey-sort | 3621.381 13 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>05993cam a2200709 i 4500</leader><controlfield tag="001">ZDB-4-EBA-on1140200295</controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20241004212047.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr cn|||||||||</controlfield><controlfield tag="008">200116s2020 maua ob 001 0 eng d</controlfield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">STF</subfield><subfield code="b">eng</subfield><subfield code="e">rda</subfield><subfield code="e">pn</subfield><subfield code="c">STF</subfield><subfield code="d">CUV</subfield><subfield code="d">YDX</subfield><subfield code="d">UKAHL</subfield><subfield code="d">OCLCF</subfield><subfield code="d">EBLCP</subfield><subfield code="d">N$T</subfield><subfield code="d">VRC</subfield><subfield code="d">OCLCO</subfield><subfield code="d">IEEEE</subfield><subfield code="d">VT2</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">UPM</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">TMA</subfield><subfield code="d">OCLCL</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">SXB</subfield><subfield code="d">OCLCQ</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">1151196130</subfield><subfield code="a">1262682480</subfield><subfield code="a">1272923379</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781630817459</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1630817457</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9781630817442</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">1630817449</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1140200295</subfield><subfield code="z">(OCoLC)1151196130</subfield><subfield code="z">(OCoLC)1262682480</subfield><subfield code="z">(OCoLC)1272923379</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">TK7876</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">621.381/3</subfield><subfield code="2">23</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kompa, Günter,</subfield><subfield code="e">author.</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Parameter extraction and complex nonlinear transistor models /</subfield><subfield code="c">Günter Kompa.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston :</subfield><subfield code="b">Artech House,</subfield><subfield code="c">[2020]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource :</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Artech House microwave library</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Online resource; title from PDF title page (viewed on March 09, 2020)</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Parameter Extraction and Complex Nonlinear Transistor Models -- Contents -- Preface -- Chapter 1 Introduction -- REFERENCES -- Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT -- 2.1 INTRODUCTION -- 2.2 EVOLUTION OF FET DEVICES -- 2.2.1 Field-Effect Transistors -- 2.2.2 Heterojunction Bipolar Transistors -- 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING -- 2.3.1 MESFET -- 2.3.2 HEMT -- 2.3.3 HBT -- 2.5 SUMMARY -- REFERENCES -- Chapter 3 Classification of Transistor Models -- 3.1 INTRODUCTION -- 3.2 PHYSICAL MODELS -- 3.2.1 Numerical Physical Models -- 3.2.2 Analytical Physical Models</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">3.3 EMPIRICAL MODELS -- 3.4 EXPERIMENTAL MODELS -- 3.5 BEHAVIORAL MODELS -- 3.5.1 ANN-Based Models -- 3.5.2 X-Parameter-Based Models -- 3.6 SUMMARY -- REFERENCES -- Chapter 4 Classical Shockley Model and Enhanced Modifications -- 4.1 INTRODUCTION -- 4.2 LONG-CHANNEL (SHOCKLEY) MODEL -- 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS -- 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION -- 4.5 TWO-REGION MODEL -- 4.6 SHORT-CHANNEL SATURATION MODEL -- 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS -- 4.7.1 Transconductance -- 4.7.2 Gate-Source Capacitance</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">4.7.3 MESFET and HEMT Transconductance Comparison -- 4.8 PROBLEMS AND SOLUTIONS -- 4.9 SUMMARY -- REFERENCES -- Chapter 5 Extrinsic Transistor Network at DC -- 5.1 INTRODUCTION -- 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING -- 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES -- 5.4 REGRIDDING ISSUES WITH MATLAB -- 5.5 SUMMARY -- REFERENCES -- Chapter 6 Estimation of Model Element Values Based on Device Physical Data -- 6.1 INTRODUCTION -- 6.2 RESISTANCES -- 6.2.1 Ohmic Contact Resistance -- 6.2.2 Series Resistances -- 6.2.3 Gate Resistance, Gate Inductance</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">6.2.4 Gate Charging Resistance -- 6.3 CONDUCTANCES -- 6.3.1 Transconductance -- 6.3.2 Channel Conductance -- 6.4 CAPACITANCES -- 6.4.1 Gate-Source Capacitance -- 6.4.2 Gate-Drain Capacitance -- 6.4.3 Drain-Source Capacitance -- 6.5 DELAY TIME -- 6.6 CONTACT AND INTERCONNECT STRUCTURES -- 6.6.1 Device Contacting Pads -- 6.6.2 Bondwire Inductance -- 6.6.3 Via Hole Inductance -- 6.6.4 Air Bridge -- 6.6.5 Field Plate -- 6.7 SUMMARY -- REFERENCES -- Chapter 7 Small-Signal Transistor Model Complexity -- 7.1 INTRODUCTION -- 7.2 SMALL-SIGNAL TRANSISTOR OPERATION</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">7.2.1 Two-Port Y-Matrix Transistor Model -- 7.2.2 Generic Extrinsic Transistor Pi-Model -- 7.3 TRANSISTOR MODEL COMPLEXITY -- 7.3.1 Small-Periphery Devices -- 7.3.2 Large-Periphery Devices -- 7.3.3 High-Resistivity Silicon Substrates -- 7.4 SUMMARY -- REFERENCES -- Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements -- 8.1 INTRODUCTION -- 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS -- 8.2.1 Generic Transconductance and Output Conductance -- 8.2.2 Generic Capacitances -- 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Microwave devices</subfield><subfield code="x">Mathematical models.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Dispositifs à micro-ondes</subfield><subfield code="x">Modèles mathématiques.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Microwave devices</subfield><subfield code="x">Mathematical models</subfield><subfield code="2">fast</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Technology, Engineering, Agriculture</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Technologie, Ingenieurswissenschaft, Landwirtschaft</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Technologie, ingénierie et agriculture</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Electronics & communications engineering</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Elektronik, Nachrichtentechnik</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Ingénierie électronique et technologie des communications</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Electronics engineering</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Elektronik</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Génie électronique</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Microwave technology</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Mikrowellentechnik</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Technologie des micro-ondes</subfield></datafield><datafield tag="758" ind1=" " ind2=" "><subfield code="i">has work:</subfield><subfield code="a">Parameter extraction and complex nonlinear transistor models (Text)</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCFMh3c9rVrjvvHv9HybG9C</subfield><subfield code="4">https://id.oclc.org/worldcat/ontology/hasWork</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="a">Kompa, Günter</subfield><subfield code="t">Parameter Extraction and Complex Nonlinear Transistor Models</subfield><subfield code="d">Norwood : Artech House,c2019</subfield><subfield code="z">9781630817442</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Artech House microwave library.</subfield><subfield code="0">http://id.loc.gov/authorities/names/n42002465</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2450266</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">Askews and Holts Library Services</subfield><subfield code="b">ASKH</subfield><subfield code="n">AH37370433</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ProQuest Ebook Central</subfield><subfield code="b">EBLB</subfield><subfield code="n">EBL6176645</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">2450266</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">IEEE</subfield><subfield code="b">IEEE</subfield><subfield code="n">9098794</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">16736914</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-863</subfield></datafield></record></collection> |
| id | ZDB-4-EBA-on1140200295 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:29:46Z |
| institution | BVB |
| isbn | 9781630817459 1630817457 |
| language | English |
| oclc_num | 1140200295 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2020 |
| publishDateSearch | 2020 |
| publishDateSort | 2020 |
| publisher | Artech House, |
| record_format | marc |
| series | Artech House microwave library. |
| series2 | Artech House microwave library |
| spelling | Kompa, Günter, author. Parameter extraction and complex nonlinear transistor models / Günter Kompa. Boston : Artech House, [2020] 1 online resource : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Artech House microwave library Online resource; title from PDF title page (viewed on March 09, 2020) Includes bibliographical references and index Parameter Extraction and Complex Nonlinear Transistor Models -- Contents -- Preface -- Chapter 1 Introduction -- REFERENCES -- Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT -- 2.1 INTRODUCTION -- 2.2 EVOLUTION OF FET DEVICES -- 2.2.1 Field-Effect Transistors -- 2.2.2 Heterojunction Bipolar Transistors -- 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING -- 2.3.1 MESFET -- 2.3.2 HEMT -- 2.3.3 HBT -- 2.5 SUMMARY -- REFERENCES -- Chapter 3 Classification of Transistor Models -- 3.1 INTRODUCTION -- 3.2 PHYSICAL MODELS -- 3.2.1 Numerical Physical Models -- 3.2.2 Analytical Physical Models 3.3 EMPIRICAL MODELS -- 3.4 EXPERIMENTAL MODELS -- 3.5 BEHAVIORAL MODELS -- 3.5.1 ANN-Based Models -- 3.5.2 X-Parameter-Based Models -- 3.6 SUMMARY -- REFERENCES -- Chapter 4 Classical Shockley Model and Enhanced Modifications -- 4.1 INTRODUCTION -- 4.2 LONG-CHANNEL (SHOCKLEY) MODEL -- 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS -- 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION -- 4.5 TWO-REGION MODEL -- 4.6 SHORT-CHANNEL SATURATION MODEL -- 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS -- 4.7.1 Transconductance -- 4.7.2 Gate-Source Capacitance 4.7.3 MESFET and HEMT Transconductance Comparison -- 4.8 PROBLEMS AND SOLUTIONS -- 4.9 SUMMARY -- REFERENCES -- Chapter 5 Extrinsic Transistor Network at DC -- 5.1 INTRODUCTION -- 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING -- 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES -- 5.4 REGRIDDING ISSUES WITH MATLAB -- 5.5 SUMMARY -- REFERENCES -- Chapter 6 Estimation of Model Element Values Based on Device Physical Data -- 6.1 INTRODUCTION -- 6.2 RESISTANCES -- 6.2.1 Ohmic Contact Resistance -- 6.2.2 Series Resistances -- 6.2.3 Gate Resistance, Gate Inductance 6.2.4 Gate Charging Resistance -- 6.3 CONDUCTANCES -- 6.3.1 Transconductance -- 6.3.2 Channel Conductance -- 6.4 CAPACITANCES -- 6.4.1 Gate-Source Capacitance -- 6.4.2 Gate-Drain Capacitance -- 6.4.3 Drain-Source Capacitance -- 6.5 DELAY TIME -- 6.6 CONTACT AND INTERCONNECT STRUCTURES -- 6.6.1 Device Contacting Pads -- 6.6.2 Bondwire Inductance -- 6.6.3 Via Hole Inductance -- 6.6.4 Air Bridge -- 6.6.5 Field Plate -- 6.7 SUMMARY -- REFERENCES -- Chapter 7 Small-Signal Transistor Model Complexity -- 7.1 INTRODUCTION -- 7.2 SMALL-SIGNAL TRANSISTOR OPERATION 7.2.1 Two-Port Y-Matrix Transistor Model -- 7.2.2 Generic Extrinsic Transistor Pi-Model -- 7.3 TRANSISTOR MODEL COMPLEXITY -- 7.3.1 Small-Periphery Devices -- 7.3.2 Large-Periphery Devices -- 7.3.3 High-Resistivity Silicon Substrates -- 7.4 SUMMARY -- REFERENCES -- Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements -- 8.1 INTRODUCTION -- 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS -- 8.2.1 Generic Transconductance and Output Conductance -- 8.2.2 Generic Capacitances -- 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS 8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS Microwave devices Mathematical models. Dispositifs à micro-ondes Modèles mathématiques. Microwave devices Mathematical models fast Technology, Engineering, Agriculture Technologie, Ingenieurswissenschaft, Landwirtschaft Technologie, ingénierie et agriculture Electronics & communications engineering Elektronik, Nachrichtentechnik Ingénierie électronique et technologie des communications Electronics engineering Elektronik Génie électronique Microwave technology Mikrowellentechnik Technologie des micro-ondes has work: Parameter extraction and complex nonlinear transistor models (Text) https://id.oclc.org/worldcat/entity/E39PCFMh3c9rVrjvvHv9HybG9C https://id.oclc.org/worldcat/ontology/hasWork Print version: Kompa, Günter Parameter Extraction and Complex Nonlinear Transistor Models Norwood : Artech House,c2019 9781630817442 Artech House microwave library. http://id.loc.gov/authorities/names/n42002465 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2450266 Volltext |
| spellingShingle | Kompa, Günter Parameter extraction and complex nonlinear transistor models / Artech House microwave library. Parameter Extraction and Complex Nonlinear Transistor Models -- Contents -- Preface -- Chapter 1 Introduction -- REFERENCES -- Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT -- 2.1 INTRODUCTION -- 2.2 EVOLUTION OF FET DEVICES -- 2.2.1 Field-Effect Transistors -- 2.2.2 Heterojunction Bipolar Transistors -- 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING -- 2.3.1 MESFET -- 2.3.2 HEMT -- 2.3.3 HBT -- 2.5 SUMMARY -- REFERENCES -- Chapter 3 Classification of Transistor Models -- 3.1 INTRODUCTION -- 3.2 PHYSICAL MODELS -- 3.2.1 Numerical Physical Models -- 3.2.2 Analytical Physical Models 3.3 EMPIRICAL MODELS -- 3.4 EXPERIMENTAL MODELS -- 3.5 BEHAVIORAL MODELS -- 3.5.1 ANN-Based Models -- 3.5.2 X-Parameter-Based Models -- 3.6 SUMMARY -- REFERENCES -- Chapter 4 Classical Shockley Model and Enhanced Modifications -- 4.1 INTRODUCTION -- 4.2 LONG-CHANNEL (SHOCKLEY) MODEL -- 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS -- 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION -- 4.5 TWO-REGION MODEL -- 4.6 SHORT-CHANNEL SATURATION MODEL -- 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS -- 4.7.1 Transconductance -- 4.7.2 Gate-Source Capacitance 4.7.3 MESFET and HEMT Transconductance Comparison -- 4.8 PROBLEMS AND SOLUTIONS -- 4.9 SUMMARY -- REFERENCES -- Chapter 5 Extrinsic Transistor Network at DC -- 5.1 INTRODUCTION -- 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING -- 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES -- 5.4 REGRIDDING ISSUES WITH MATLAB -- 5.5 SUMMARY -- REFERENCES -- Chapter 6 Estimation of Model Element Values Based on Device Physical Data -- 6.1 INTRODUCTION -- 6.2 RESISTANCES -- 6.2.1 Ohmic Contact Resistance -- 6.2.2 Series Resistances -- 6.2.3 Gate Resistance, Gate Inductance 6.2.4 Gate Charging Resistance -- 6.3 CONDUCTANCES -- 6.3.1 Transconductance -- 6.3.2 Channel Conductance -- 6.4 CAPACITANCES -- 6.4.1 Gate-Source Capacitance -- 6.4.2 Gate-Drain Capacitance -- 6.4.3 Drain-Source Capacitance -- 6.5 DELAY TIME -- 6.6 CONTACT AND INTERCONNECT STRUCTURES -- 6.6.1 Device Contacting Pads -- 6.6.2 Bondwire Inductance -- 6.6.3 Via Hole Inductance -- 6.6.4 Air Bridge -- 6.6.5 Field Plate -- 6.7 SUMMARY -- REFERENCES -- Chapter 7 Small-Signal Transistor Model Complexity -- 7.1 INTRODUCTION -- 7.2 SMALL-SIGNAL TRANSISTOR OPERATION 7.2.1 Two-Port Y-Matrix Transistor Model -- 7.2.2 Generic Extrinsic Transistor Pi-Model -- 7.3 TRANSISTOR MODEL COMPLEXITY -- 7.3.1 Small-Periphery Devices -- 7.3.2 Large-Periphery Devices -- 7.3.3 High-Resistivity Silicon Substrates -- 7.4 SUMMARY -- REFERENCES -- Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements -- 8.1 INTRODUCTION -- 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS -- 8.2.1 Generic Transconductance and Output Conductance -- 8.2.2 Generic Capacitances -- 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS 8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS Microwave devices Mathematical models. Dispositifs à micro-ondes Modèles mathématiques. Microwave devices Mathematical models fast |
| title | Parameter extraction and complex nonlinear transistor models / |
| title_auth | Parameter extraction and complex nonlinear transistor models / |
| title_exact_search | Parameter extraction and complex nonlinear transistor models / |
| title_full | Parameter extraction and complex nonlinear transistor models / Günter Kompa. |
| title_fullStr | Parameter extraction and complex nonlinear transistor models / Günter Kompa. |
| title_full_unstemmed | Parameter extraction and complex nonlinear transistor models / Günter Kompa. |
| title_short | Parameter extraction and complex nonlinear transistor models / |
| title_sort | parameter extraction and complex nonlinear transistor models |
| topic | Microwave devices Mathematical models. Dispositifs à micro-ondes Modèles mathématiques. Microwave devices Mathematical models fast |
| topic_facet | Microwave devices Mathematical models. Dispositifs à micro-ondes Modèles mathématiques. Microwave devices Mathematical models |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2450266 |
| work_keys_str_mv | AT kompagunter parameterextractionandcomplexnonlineartransistormodels |