Semiconductors :: silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China /
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| Weitere Verfasser: | |
| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Zurich, Switzerland :
Trans Tech Publications Ltd,
[2019]
|
| Schriftenreihe: | Materials science forum ;
v. 954. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | 1 online resource |
| ISBN: | 9783035733853 3035733856 |
Internformat
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| 505 | 0 | |a Chapter 1: Growth, structure and property of wide bandgap semiconductors -- Effect of growth chamber structure on the growth of aluminum nitride crystals -- Investigation of the 6-folded pattern in the facetted region of 4° off axis 4H-SiC -- Effects of annealing parameters on epitaxial graphene on SiC substrates -- Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene -- Theoretical calculation and simulation for microcantilevers based on SiC epitaxial layers -- Homepitaxial growth on Si-Face (0001) on-axis 4H-SiC substrates -- Progress in single crystal growth of wide bandgap semiconductor SiC -- Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system -- Electron mobility due to surface roughness scattering in depleted GaAs free-standing thin ribbon -- Measurement of resistivity of silicon carbide by discharge time of equivalent capacitance of the sample -- Study of the growth temperature measurement and control for silicon carbide crystal -- Phase control of Ga203 thin films grown by metal-organic chemical vapor deposition -- Microstructure of interfacial basal plane dislocations in 4H-SiC epilayers | |
| 505 | 8 | |a Chapter 2: Fabrication, property and application of wide bandgap semiconductor devices -- Design, fabrication and characterization of a 4.5kV/50A 4H-SiCpiN rectifiers -- Recent progress of SiC MOSFET devices -- Improved electrical properties of 4H-SiC MOS devices with high temperature thermal oxidation -- The correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions -- Reliability of 4H-SiC (001) MOS gate oxide by NO post-oxide-annealing -- Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices -- Effect of grinding-induced stress on interface state density of SiC/SiO2 -- GaN Schottky barrier diodes with TiN electrode for microwave power transmission -- Research on threshold voltage instability in SiC MOSFET devices with precision measurement -- Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS -- The influence of temperature storage on threshold voltage stability for SiC VDMOSFET -- An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge -- An optiized p+ shielding 4H-SiC trench gate MOSFETs structure with floating regions -- Simplified silicon carbide MOSFET model based on neural network -- The effect of circuit parameters on reverse biased safe operating area of SiC MOSFET -- Effect of tunneling on small signal characteristics of IMPATT diodes with SiC heteropolytype structures -- Simulation on large signal and noise properties of (n)Si/(p)SiC heterostructural IMPATT diodes -- Research on performance contrast between SiC MOSFET and Si IGBT based on the converter of urban rail vehicles -- Comparison of high voltage SiC MOSFET and Si IGBT power module thermal performance -- Thermo-mechanical reliability of 1200 V-450A IGBT module considering voids in the solder layer -- Keyword index -- Author index. | |
| 650 | 0 | |a Semiconductors |v Congresses. | |
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Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-on1101898556 |
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| adam_text | |
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| author2 | Lu, Min |
| author2_role | edt |
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| author_corporate | Asia-Pacific Conference on Silicon Carbide and Related Materials Beijing, China |
| author_corporate_role | |
| author_facet | Lu, Min Asia-Pacific Conference on Silicon Carbide and Related Materials Beijing, China |
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| contents | Chapter 1: Growth, structure and property of wide bandgap semiconductors -- Effect of growth chamber structure on the growth of aluminum nitride crystals -- Investigation of the 6-folded pattern in the facetted region of 4° off axis 4H-SiC -- Effects of annealing parameters on epitaxial graphene on SiC substrates -- Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene -- Theoretical calculation and simulation for microcantilevers based on SiC epitaxial layers -- Homepitaxial growth on Si-Face (0001) on-axis 4H-SiC substrates -- Progress in single crystal growth of wide bandgap semiconductor SiC -- Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system -- Electron mobility due to surface roughness scattering in depleted GaAs free-standing thin ribbon -- Measurement of resistivity of silicon carbide by discharge time of equivalent capacitance of the sample -- Study of the growth temperature measurement and control for silicon carbide crystal -- Phase control of Ga203 thin films grown by metal-organic chemical vapor deposition -- Microstructure of interfacial basal plane dislocations in 4H-SiC epilayers Chapter 2: Fabrication, property and application of wide bandgap semiconductor devices -- Design, fabrication and characterization of a 4.5kV/50A 4H-SiCpiN rectifiers -- Recent progress of SiC MOSFET devices -- Improved electrical properties of 4H-SiC MOS devices with high temperature thermal oxidation -- The correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions -- Reliability of 4H-SiC (001) MOS gate oxide by NO post-oxide-annealing -- Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices -- Effect of grinding-induced stress on interface state density of SiC/SiO2 -- GaN Schottky barrier diodes with TiN electrode for microwave power transmission -- Research on threshold voltage instability in SiC MOSFET devices with precision measurement -- Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS -- The influence of temperature storage on threshold voltage stability for SiC VDMOSFET -- An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge -- An optiized p+ shielding 4H-SiC trench gate MOSFETs structure with floating regions -- Simplified silicon carbide MOSFET model based on neural network -- The effect of circuit parameters on reverse biased safe operating area of SiC MOSFET -- Effect of tunneling on small signal characteristics of IMPATT diodes with SiC heteropolytype structures -- Simulation on large signal and noise properties of (n)Si/(p)SiC heterostructural IMPATT diodes -- Research on performance contrast between SiC MOSFET and Si IGBT based on the converter of urban rail vehicles -- Comparison of high voltage SiC MOSFET and Si IGBT power module thermal performance -- Thermo-mechanical reliability of 1200 V-450A IGBT module considering voids in the solder layer -- Keyword index -- Author index. |
| ctrlnum | (OCoLC)1101898556 |
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| id | ZDB-4-EBA-on1101898556 |
| illustrated | Not Illustrated |
| indexdate | 2024-11-27T13:29:29Z |
| institution | BVB |
| isbn | 9783035733853 3035733856 |
| language | English |
| oclc_num | 1101898556 |
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| spelling | Asia-Pacific Conference on Silicon Carbide and Related Materials (2018 : Beijing, China) Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / edited by Min Liu. Zurich, Switzerland : Trans Tech Publications Ltd, [2019] 1 online resource text txt rdacontent computer c rdamedia online resource cr rdacarrier Materials science forum ; volume 954 Online resource; title from digital title page (viewed on August 12, 2019). Chapter 1: Growth, structure and property of wide bandgap semiconductors -- Effect of growth chamber structure on the growth of aluminum nitride crystals -- Investigation of the 6-folded pattern in the facetted region of 4° off axis 4H-SiC -- Effects of annealing parameters on epitaxial graphene on SiC substrates -- Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene -- Theoretical calculation and simulation for microcantilevers based on SiC epitaxial layers -- Homepitaxial growth on Si-Face (0001) on-axis 4H-SiC substrates -- Progress in single crystal growth of wide bandgap semiconductor SiC -- Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system -- Electron mobility due to surface roughness scattering in depleted GaAs free-standing thin ribbon -- Measurement of resistivity of silicon carbide by discharge time of equivalent capacitance of the sample -- Study of the growth temperature measurement and control for silicon carbide crystal -- Phase control of Ga203 thin films grown by metal-organic chemical vapor deposition -- Microstructure of interfacial basal plane dislocations in 4H-SiC epilayers Chapter 2: Fabrication, property and application of wide bandgap semiconductor devices -- Design, fabrication and characterization of a 4.5kV/50A 4H-SiCpiN rectifiers -- Recent progress of SiC MOSFET devices -- Improved electrical properties of 4H-SiC MOS devices with high temperature thermal oxidation -- The correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions -- Reliability of 4H-SiC (001) MOS gate oxide by NO post-oxide-annealing -- Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices -- Effect of grinding-induced stress on interface state density of SiC/SiO2 -- GaN Schottky barrier diodes with TiN electrode for microwave power transmission -- Research on threshold voltage instability in SiC MOSFET devices with precision measurement -- Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS -- The influence of temperature storage on threshold voltage stability for SiC VDMOSFET -- An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge -- An optiized p+ shielding 4H-SiC trench gate MOSFETs structure with floating regions -- Simplified silicon carbide MOSFET model based on neural network -- The effect of circuit parameters on reverse biased safe operating area of SiC MOSFET -- Effect of tunneling on small signal characteristics of IMPATT diodes with SiC heteropolytype structures -- Simulation on large signal and noise properties of (n)Si/(p)SiC heterostructural IMPATT diodes -- Research on performance contrast between SiC MOSFET and Si IGBT based on the converter of urban rail vehicles -- Comparison of high voltage SiC MOSFET and Si IGBT power module thermal performance -- Thermo-mechanical reliability of 1200 V-450A IGBT module considering voids in the solder layer -- Keyword index -- Author index. Semiconductors Congresses. Semi-conducteurs Congrès. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Semiconductors fast Conference papers and proceedings fast Lu, Min, editor. has work: Semiconductors: Silicon Carbide and Related Materials (Work) https://id.oclc.org/worldcat/entity/E39PCY63WHVRwFjBjPwWQVGKtX https://id.oclc.org/worldcat/ontology/hasWork Materials science forum ; v. 954. http://id.loc.gov/authorities/names/no94007967 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2138911 Volltext |
| spellingShingle | Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / Materials science forum ; Chapter 1: Growth, structure and property of wide bandgap semiconductors -- Effect of growth chamber structure on the growth of aluminum nitride crystals -- Investigation of the 6-folded pattern in the facetted region of 4° off axis 4H-SiC -- Effects of annealing parameters on epitaxial graphene on SiC substrates -- Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene -- Theoretical calculation and simulation for microcantilevers based on SiC epitaxial layers -- Homepitaxial growth on Si-Face (0001) on-axis 4H-SiC substrates -- Progress in single crystal growth of wide bandgap semiconductor SiC -- Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system -- Electron mobility due to surface roughness scattering in depleted GaAs free-standing thin ribbon -- Measurement of resistivity of silicon carbide by discharge time of equivalent capacitance of the sample -- Study of the growth temperature measurement and control for silicon carbide crystal -- Phase control of Ga203 thin films grown by metal-organic chemical vapor deposition -- Microstructure of interfacial basal plane dislocations in 4H-SiC epilayers Chapter 2: Fabrication, property and application of wide bandgap semiconductor devices -- Design, fabrication and characterization of a 4.5kV/50A 4H-SiCpiN rectifiers -- Recent progress of SiC MOSFET devices -- Improved electrical properties of 4H-SiC MOS devices with high temperature thermal oxidation -- The correlation between the reduction of interface state density at the SiO2/SiC interface and the NO post-oxide-annealing conditions -- Reliability of 4H-SiC (001) MOS gate oxide by NO post-oxide-annealing -- Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices -- Effect of grinding-induced stress on interface state density of SiC/SiO2 -- GaN Schottky barrier diodes with TiN electrode for microwave power transmission -- Research on threshold voltage instability in SiC MOSFET devices with precision measurement -- Simulation of electrothermal characteristics of 1200V/75A 4H-SiC JBS -- The influence of temperature storage on threshold voltage stability for SiC VDMOSFET -- An improved 4H-SiC trench gate MOSFETs structure with low on-resistance and reduced gate charge -- An optiized p+ shielding 4H-SiC trench gate MOSFETs structure with floating regions -- Simplified silicon carbide MOSFET model based on neural network -- The effect of circuit parameters on reverse biased safe operating area of SiC MOSFET -- Effect of tunneling on small signal characteristics of IMPATT diodes with SiC heteropolytype structures -- Simulation on large signal and noise properties of (n)Si/(p)SiC heterostructural IMPATT diodes -- Research on performance contrast between SiC MOSFET and Si IGBT based on the converter of urban rail vehicles -- Comparison of high voltage SiC MOSFET and Si IGBT power module thermal performance -- Thermo-mechanical reliability of 1200 V-450A IGBT module considering voids in the solder layer -- Keyword index -- Author index. Semiconductors Congresses. Semi-conducteurs Congrès. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Semiconductors fast |
| title | Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / |
| title_auth | Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / |
| title_exact_search | Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / |
| title_full | Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / edited by Min Liu. |
| title_fullStr | Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / edited by Min Liu. |
| title_full_unstemmed | Semiconductors : silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / edited by Min Liu. |
| title_short | Semiconductors : |
| title_sort | semiconductors silicon carbide and related materials asia pacific conference on silicon carbide and related materials apcscrm 2018 selected peer reviewed papers from the asia pacific conference on silicon carbide and related materials apcscrm 2018 july 9 12 2018 beijing china |
| title_sub | silicon carbide and related materials : Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) : selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China / |
| topic | Semiconductors Congresses. Semi-conducteurs Congrès. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Semiconductors fast |
| topic_facet | Semiconductors Congresses. Semi-conducteurs Congrès. TECHNOLOGY & ENGINEERING Mechanical. Semiconductors Conference papers and proceedings |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=2138911 |
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