Nano devices and sensors /:
"The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engi...
Gespeichert in:
| Körperschaft: | |
|---|---|
| Weitere Verfasser: | , , |
| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston ; Berlin :
De Gruyter,
[2016]
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | "The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies"--Provided by publisher |
| Beschreibung: | Selection of papers from 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. |
| Beschreibung: | 1 online resource (220 pages) : illustrations |
| Bibliographie: | Includes bibliographical references. |
| ISBN: | 9781501501531 1501501534 9781501501555 1501501550 9781523104611 1523104619 9781501501548 1501501542 |
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| 505 | 0 | |a Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-æW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-æm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors. | |
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| author2 | Liou, Juin J. Liaw, Shien-Kuei Chung, Yung-Hui |
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| author_corporate | International Symposium on Next-Generation Electronics Taipei, Taiwan |
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| author_facet | Liou, Juin J. Liaw, Shien-Kuei Chung, Yung-Hui International Symposium on Next-Generation Electronics Taipei, Taiwan |
| author_sort | International Symposium on Next-Generation Electronics Taipei, Taiwan |
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| contents | Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-æW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-æm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors. |
| ctrlnum | (OCoLC)948780477 |
| dewey-full | 620.5 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
| dewey-raw | 620.5 |
| dewey-search | 620.5 |
| dewey-sort | 3620.5 |
| dewey-tens | 620 - Engineering and allied operations |
| format | Electronic Conference Proceeding eBook |
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| indexdate | 2024-11-27T13:27:11Z |
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| isbn | 9781501501531 1501501534 9781501501555 1501501550 9781523104611 1523104619 9781501501548 1501501542 |
| language | English |
| oclc_num | 948780477 |
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| physical | 1 online resource (220 pages) : illustrations |
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| spelling | International Symposium on Next-Generation Electronics (4th : 2015 : Taipei, Taiwan) http://id.loc.gov/authorities/names/no2016027997 Nano devices and sensors / edited by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. Boston ; Berlin : De Gruyter, [2016] ©2016 1 online resource (220 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier text file Selection of papers from 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. Includes bibliographical references. "The chapters in this edited book are written by some authors who have presented very high quality papers at the 2015 International Symposium of Next-Generation Electronics (ISNE 2015) held in Taipei, Taiwan. The ISNE 2015 was intended to provide a common forum for researchers, scientists, engineers, and practitioners throughout the world to present their latest research findings, ideas, developments, and applications in the general areas of electron devices, integrated circuits, and microelectronic systems and technologies"--Provided by publisher Print version record. In English. Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-æW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-æm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors. Nanoelectronics Congresses. Nanoélectronique Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Nanoelectronics fast proceedings (reports) aat Conference papers and proceedings fast Conference papers and proceedings. lcgft http://id.loc.gov/authorities/genreForms/gf2014026068 Actes de congrès. rvmgf Liou, Juin J., editor. http://id.loc.gov/authorities/names/n93104714 Liaw, Shien-Kuei, editor. http://id.loc.gov/authorities/names/n2016019045 Chung, Yung-Hui, editor. http://id.loc.gov/authorities/names/n2016019047 has work: Nano devices and sensors (Text) https://id.oclc.org/worldcat/entity/E39PCFPJqTC77MWhWdbhGP98kC https://id.oclc.org/worldcat/ontology/hasWork Print version: International Symposium on Next-Generation Electronics (4th : 2015 : Taipei, Taiwan). Nano devices and sensors. Berlin ; Boston : De Gruyter, [2016] 9781501510502 (DLC) 2016016432 (OCoLC)948968348 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1246429 Volltext 505-00/(S Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-μW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits. |
| spellingShingle | Nano devices and sensors / Subthreshold Behaviors of Nanoscale Silicon and Germanium Junctionless Cylindrical Surrounding-Gate MOSFETs -- Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation -- Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory -- Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices -- A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-Based Resistive Switching Memory -- On-chip Wide Range Bidirectional Current Sensor for Li-ion Battery Management System -- A 12-bit 1-MS/s 26-æW SAR ADC for Sensor Applications -- A 5.2/5.8 GHz Dual Band On-Off Keying Transmitter Design for Bio-Signal Transmission -- Impacts of ESD Reliability by Different Layout Engineering in the 0.25-æm 60-V High-Voltage LDMOS Devices -- Impact-Based Area Allocation for Yield Optimization in Integrated Circuits -- Editors -- List of authors. Nanoelectronics Congresses. Nanoélectronique Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Nanoelectronics fast |
| subject_GND | http://id.loc.gov/authorities/genreForms/gf2014026068 |
| title | Nano devices and sensors / |
| title_auth | Nano devices and sensors / |
| title_exact_search | Nano devices and sensors / |
| title_full | Nano devices and sensors / edited by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. |
| title_fullStr | Nano devices and sensors / edited by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. |
| title_full_unstemmed | Nano devices and sensors / edited by Juin J. Liou, Shien-Kuei Liaw, Yung-Hui Chung. |
| title_short | Nano devices and sensors / |
| title_sort | nano devices and sensors |
| topic | Nanoelectronics Congresses. Nanoélectronique Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Nanoelectronics fast |
| topic_facet | Nanoelectronics Congresses. Nanoélectronique Congrès. TECHNOLOGY & ENGINEERING Engineering (General) TECHNOLOGY & ENGINEERING Reference. Nanoelectronics proceedings (reports) Conference papers and proceedings Conference papers and proceedings. Actes de congrès. |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1246429 |
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