Rare earth and transition metal doping of semiconductor materials :: synthesis, magnetic properties and room temperature spintronics /
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconduct...
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| Weitere Verfasser: | , , |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Cambridge :
Woodhead Publishing,
2016.
|
| Schriftenreihe: | Woodhead Publishing series in electronic and optical materials ;
no. 87. |
| Schlagworte: | |
| Online-Zugang: | Volltext Volltext |
| Zusammenfassung: | Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devicesAnalyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronicsDetails the properties of semiconductors for spintronics. |
| Beschreibung: | 1 online resource (472 pages) |
| ISBN: | 9780081000601 008100060X |
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| 245 | 0 | 0 | |a Rare earth and transition metal doping of semiconductor materials : |b synthesis, magnetic properties and room temperature spintronics / |c edited by Volkmar Dierolf, Ian Ferguson, John M. Zavada. |
| 260 | |a Cambridge : |b Woodhead Publishing, |c 2016. | ||
| 300 | |a 1 online resource (472 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 490 | 1 | |a Woodhead Publishing Series in Electronic and Optical Materials ; |v no. 87 | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Related titles; Rare Earth and Transition Metal Doping of Semiconductor Materials; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; One -- Theory of magnetism in III-V semiconductors; 1 -- Computational nanomaterials design for nanospintronics: room-temperature spintronics applications; 1.1 Introduction; 1.2 Disordered dilute magnetic semiconductors; 1.2.1 p-d exchange and double exchange mechanisms; 1.2.2 Reliable calculation of TC; 1.2.3 Toward high TC; 1.3 Spinodal nanodecomposition and high blocking temperature. | |
| 505 | 8 | |a 1.3.1 Mixing energy1.3.2 Chemical pair interaction; 1.3.3 Simulation of the spinodal nanodecomposition: Dairiseki phase versus Konbu phase; 1.3.3.1 Dairiseki phase; 1.3.3.2 Konbu phase; 1.3.4 Superparamagnetic blocking phenomena; 1.4 Rare-earth impurities in gallium nitride; 1.4.1 High-efficiency light emission; 1.4.2 High-density doping; 1.4.3 Zener's p-f exchange interaction; 1.4.4 Circularly polarized luminescence; 1.4.5 Summary; 1.5 MgO-based high-TC nanospintronics; References. | |
| 505 | 8 | |a 2 -- Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models2.1 Introduction; 2.2 Electronic structure of transition-metal and rare-earth elements in semiconductors; 2.2.1 Basic energy level scheme; 2.2.2 Multiplet splittings for f electrons and Hund's rules; 2.3 Computational methods dealing with strongly correlated electrons; 2.3.1 Failures of density functional theory; 2.3.2 Hubbard U correction: LDA+U and SIC; 2.3.3 Hybrid functionals; 2.3.4 The GW method; 2.3.5 Dynamic mean field theory; 2.3.6 Concluding remarks; 2.4 Magnetism. | |
| 505 | 8 | |a 2.4.1 Magnetic moments, ferromagnetic and antiferromagnetic coupling2.4.1.1 Introductory remarks; 2.4.1.2 Mapping of total energy differences on a Heisenberg model; 2.4.1.3 Liechtenstein's linear response theory; 2.4.1.4 Disordered local moments theory; 2.4.2 Spatial fluctuations of magnetic moments; 2.4.3 Percolation theory; 2.4.4 Effects of different underlying electronic structure methods; 2.4.5 Calculating critical temperatures; 2.4.6 Spinodal decomposition; 2.4.7 d0 magnetism: role of defects in magnetism; 2.4.8 Model exchange mechanisms; 2.5 Case study: Gd in GaN. | |
| 505 | 8 | |a 2.5.1 Introduction and experimental literature2.5.2 Models for explaining the magnetism; 2.5.2.1 Sphere of influence model; 2.5.2.2 s-f coupling model; 2.5.2.3 Ga vacancies; 2.5.2.4 Critique of the vacancy model; 2.5.2.5 Interstitials; 2.5.2.6 Analysis of exchange interactions; 2.5.2.7 Ga-vacancy clusters; 2.5.2.8 Results of percolation theory; 2.5.2.9 Fermi-level pinning near clusters; 2.5.3 Growth simulations of clustering; 2.5.3.1 Experimental evidence for clustering and role of extended defects; 2.5.3.2 Discussion; 2.5.4 Summary; Acknowledgments; References. | |
| 505 | 8 | |a 3 -- Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles. | |
| 520 | |a Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devicesAnalyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronicsDetails the properties of semiconductors for spintronics. | ||
| 650 | 0 | |a Semiconductors. |0 http://id.loc.gov/authorities/subjects/sh85119903 | |
| 650 | 0 | |a Doped semiconductors. |0 http://id.loc.gov/authorities/subjects/sh85039078 | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 6 | |a Semi-conducteurs dopés. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Doped semiconductors |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 655 | 4 | |a Electronic book. | |
| 700 | 1 | |a Dierolf, Volkmar, |d 1960- |1 https://id.oclc.org/worldcat/entity/E39PCjDBd8FFDYXVdfcFCq64YP |0 http://id.loc.gov/authorities/names/n2003006729 | |
| 700 | 1 | |a Ferguson, Ian T. |0 http://id.loc.gov/authorities/names/no00072785 | |
| 700 | 1 | |a Zavada, J. M. |0 http://id.loc.gov/authorities/names/n92009138 | |
| 758 | |i has work: |a Rare earth and transition metal doping of semiconductor materials (Text) |1 https://id.oclc.org/worldcat/entity/E39PCH3XwTmGQ8gddGH9Jt7tjC |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Dierolf, Volkmar. |t Rare Earth and Transition Metal Doping of Semiconductor Materials : Synthesis, Magnetic Properties and Room Temperature Spintronics. |d : Elsevier Science, ©2016 |z 9780081000410 |
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| contents | Front Cover; Related titles; Rare Earth and Transition Metal Doping of Semiconductor Materials; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; One -- Theory of magnetism in III-V semiconductors; 1 -- Computational nanomaterials design for nanospintronics: room-temperature spintronics applications; 1.1 Introduction; 1.2 Disordered dilute magnetic semiconductors; 1.2.1 p-d exchange and double exchange mechanisms; 1.2.2 Reliable calculation of TC; 1.2.3 Toward high TC; 1.3 Spinodal nanodecomposition and high blocking temperature. 1.3.1 Mixing energy1.3.2 Chemical pair interaction; 1.3.3 Simulation of the spinodal nanodecomposition: Dairiseki phase versus Konbu phase; 1.3.3.1 Dairiseki phase; 1.3.3.2 Konbu phase; 1.3.4 Superparamagnetic blocking phenomena; 1.4 Rare-earth impurities in gallium nitride; 1.4.1 High-efficiency light emission; 1.4.2 High-density doping; 1.4.3 Zener's p-f exchange interaction; 1.4.4 Circularly polarized luminescence; 1.4.5 Summary; 1.5 MgO-based high-TC nanospintronics; References. 2 -- Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models2.1 Introduction; 2.2 Electronic structure of transition-metal and rare-earth elements in semiconductors; 2.2.1 Basic energy level scheme; 2.2.2 Multiplet splittings for f electrons and Hund's rules; 2.3 Computational methods dealing with strongly correlated electrons; 2.3.1 Failures of density functional theory; 2.3.2 Hubbard U correction: LDA+U and SIC; 2.3.3 Hybrid functionals; 2.3.4 The GW method; 2.3.5 Dynamic mean field theory; 2.3.6 Concluding remarks; 2.4 Magnetism. 2.4.1 Magnetic moments, ferromagnetic and antiferromagnetic coupling2.4.1.1 Introductory remarks; 2.4.1.2 Mapping of total energy differences on a Heisenberg model; 2.4.1.3 Liechtenstein's linear response theory; 2.4.1.4 Disordered local moments theory; 2.4.2 Spatial fluctuations of magnetic moments; 2.4.3 Percolation theory; 2.4.4 Effects of different underlying electronic structure methods; 2.4.5 Calculating critical temperatures; 2.4.6 Spinodal decomposition; 2.4.7 d0 magnetism: role of defects in magnetism; 2.4.8 Model exchange mechanisms; 2.5 Case study: Gd in GaN. 2.5.1 Introduction and experimental literature2.5.2 Models for explaining the magnetism; 2.5.2.1 Sphere of influence model; 2.5.2.2 s-f coupling model; 2.5.2.3 Ga vacancies; 2.5.2.4 Critique of the vacancy model; 2.5.2.5 Interstitials; 2.5.2.6 Analysis of exchange interactions; 2.5.2.7 Ga-vacancy clusters; 2.5.2.8 Results of percolation theory; 2.5.2.9 Fermi-level pinning near clusters; 2.5.3 Growth simulations of clustering; 2.5.3.1 Experimental evidence for clustering and role of extended defects; 2.5.3.2 Discussion; 2.5.4 Summary; Acknowledgments; References. 3 -- Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles. |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | ZDB-4-EBA-ocn939262274 |
| illustrated | Not Illustrated |
| indexdate | 2024-11-27T13:27:03Z |
| institution | BVB |
| isbn | 9780081000601 008100060X |
| language | English |
| oclc_num | 939262274 |
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| physical | 1 online resource (472 pages) |
| psigel | ZDB-4-EBA |
| publishDate | 2016 |
| publishDateSearch | 2016 |
| publishDateSort | 2016 |
| publisher | Woodhead Publishing, |
| record_format | marc |
| series | Woodhead Publishing series in electronic and optical materials ; |
| series2 | Woodhead Publishing Series in Electronic and Optical Materials ; |
| spelling | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / edited by Volkmar Dierolf, Ian Ferguson, John M. Zavada. Cambridge : Woodhead Publishing, 2016. 1 online resource (472 pages) text txt rdacontent computer c rdamedia online resource cr rdacarrier Woodhead Publishing Series in Electronic and Optical Materials ; no. 87 Print version record. Front Cover; Related titles; Rare Earth and Transition Metal Doping of Semiconductor Materials; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; One -- Theory of magnetism in III-V semiconductors; 1 -- Computational nanomaterials design for nanospintronics: room-temperature spintronics applications; 1.1 Introduction; 1.2 Disordered dilute magnetic semiconductors; 1.2.1 p-d exchange and double exchange mechanisms; 1.2.2 Reliable calculation of TC; 1.2.3 Toward high TC; 1.3 Spinodal nanodecomposition and high blocking temperature. 1.3.1 Mixing energy1.3.2 Chemical pair interaction; 1.3.3 Simulation of the spinodal nanodecomposition: Dairiseki phase versus Konbu phase; 1.3.3.1 Dairiseki phase; 1.3.3.2 Konbu phase; 1.3.4 Superparamagnetic blocking phenomena; 1.4 Rare-earth impurities in gallium nitride; 1.4.1 High-efficiency light emission; 1.4.2 High-density doping; 1.4.3 Zener's p-f exchange interaction; 1.4.4 Circularly polarized luminescence; 1.4.5 Summary; 1.5 MgO-based high-TC nanospintronics; References. 2 -- Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models2.1 Introduction; 2.2 Electronic structure of transition-metal and rare-earth elements in semiconductors; 2.2.1 Basic energy level scheme; 2.2.2 Multiplet splittings for f electrons and Hund's rules; 2.3 Computational methods dealing with strongly correlated electrons; 2.3.1 Failures of density functional theory; 2.3.2 Hubbard U correction: LDA+U and SIC; 2.3.3 Hybrid functionals; 2.3.4 The GW method; 2.3.5 Dynamic mean field theory; 2.3.6 Concluding remarks; 2.4 Magnetism. 2.4.1 Magnetic moments, ferromagnetic and antiferromagnetic coupling2.4.1.1 Introductory remarks; 2.4.1.2 Mapping of total energy differences on a Heisenberg model; 2.4.1.3 Liechtenstein's linear response theory; 2.4.1.4 Disordered local moments theory; 2.4.2 Spatial fluctuations of magnetic moments; 2.4.3 Percolation theory; 2.4.4 Effects of different underlying electronic structure methods; 2.4.5 Calculating critical temperatures; 2.4.6 Spinodal decomposition; 2.4.7 d0 magnetism: role of defects in magnetism; 2.4.8 Model exchange mechanisms; 2.5 Case study: Gd in GaN. 2.5.1 Introduction and experimental literature2.5.2 Models for explaining the magnetism; 2.5.2.1 Sphere of influence model; 2.5.2.2 s-f coupling model; 2.5.2.3 Ga vacancies; 2.5.2.4 Critique of the vacancy model; 2.5.2.5 Interstitials; 2.5.2.6 Analysis of exchange interactions; 2.5.2.7 Ga-vacancy clusters; 2.5.2.8 Results of percolation theory; 2.5.2.9 Fermi-level pinning near clusters; 2.5.3 Growth simulations of clustering; 2.5.3.1 Experimental evidence for clustering and role of extended defects; 2.5.3.2 Discussion; 2.5.4 Summary; Acknowledgments; References. 3 -- Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles. Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devicesAnalyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronicsDetails the properties of semiconductors for spintronics. Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Doped semiconductors. http://id.loc.gov/authorities/subjects/sh85039078 Semi-conducteurs. Semi-conducteurs dopés. semiconductor. aat TECHNOLOGY & ENGINEERING Mechanical. bisacsh Doped semiconductors fast Semiconductors fast Electronic book. Dierolf, Volkmar, 1960- https://id.oclc.org/worldcat/entity/E39PCjDBd8FFDYXVdfcFCq64YP http://id.loc.gov/authorities/names/n2003006729 Ferguson, Ian T. http://id.loc.gov/authorities/names/no00072785 Zavada, J. M. http://id.loc.gov/authorities/names/n92009138 has work: Rare earth and transition metal doping of semiconductor materials (Text) https://id.oclc.org/worldcat/entity/E39PCH3XwTmGQ8gddGH9Jt7tjC https://id.oclc.org/worldcat/ontology/hasWork Print version: Dierolf, Volkmar. Rare Earth and Transition Metal Doping of Semiconductor Materials : Synthesis, Magnetic Properties and Room Temperature Spintronics. : Elsevier Science, ©2016 9780081000410 Woodhead Publishing series in electronic and optical materials ; no. 87. http://id.loc.gov/authorities/names/no2013009353 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1144142 Volltext FWS01 ZDB-4-EBA FWS_PDA_EBA https://www.sciencedirect.com/science/book/9780081000410 Volltext |
| spellingShingle | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / Woodhead Publishing series in electronic and optical materials ; Front Cover; Related titles; Rare Earth and Transition Metal Doping of Semiconductor Materials; Copyright; Contents; List of contributors; Woodhead Publishing Series in Electronic and Optical Materials; One -- Theory of magnetism in III-V semiconductors; 1 -- Computational nanomaterials design for nanospintronics: room-temperature spintronics applications; 1.1 Introduction; 1.2 Disordered dilute magnetic semiconductors; 1.2.1 p-d exchange and double exchange mechanisms; 1.2.2 Reliable calculation of TC; 1.2.3 Toward high TC; 1.3 Spinodal nanodecomposition and high blocking temperature. 1.3.1 Mixing energy1.3.2 Chemical pair interaction; 1.3.3 Simulation of the spinodal nanodecomposition: Dairiseki phase versus Konbu phase; 1.3.3.1 Dairiseki phase; 1.3.3.2 Konbu phase; 1.3.4 Superparamagnetic blocking phenomena; 1.4 Rare-earth impurities in gallium nitride; 1.4.1 High-efficiency light emission; 1.4.2 High-density doping; 1.4.3 Zener's p-f exchange interaction; 1.4.4 Circularly polarized luminescence; 1.4.5 Summary; 1.5 MgO-based high-TC nanospintronics; References. 2 -- Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models2.1 Introduction; 2.2 Electronic structure of transition-metal and rare-earth elements in semiconductors; 2.2.1 Basic energy level scheme; 2.2.2 Multiplet splittings for f electrons and Hund's rules; 2.3 Computational methods dealing with strongly correlated electrons; 2.3.1 Failures of density functional theory; 2.3.2 Hubbard U correction: LDA+U and SIC; 2.3.3 Hybrid functionals; 2.3.4 The GW method; 2.3.5 Dynamic mean field theory; 2.3.6 Concluding remarks; 2.4 Magnetism. 2.4.1 Magnetic moments, ferromagnetic and antiferromagnetic coupling2.4.1.1 Introductory remarks; 2.4.1.2 Mapping of total energy differences on a Heisenberg model; 2.4.1.3 Liechtenstein's linear response theory; 2.4.1.4 Disordered local moments theory; 2.4.2 Spatial fluctuations of magnetic moments; 2.4.3 Percolation theory; 2.4.4 Effects of different underlying electronic structure methods; 2.4.5 Calculating critical temperatures; 2.4.6 Spinodal decomposition; 2.4.7 d0 magnetism: role of defects in magnetism; 2.4.8 Model exchange mechanisms; 2.5 Case study: Gd in GaN. 2.5.1 Introduction and experimental literature2.5.2 Models for explaining the magnetism; 2.5.2.1 Sphere of influence model; 2.5.2.2 s-f coupling model; 2.5.2.3 Ga vacancies; 2.5.2.4 Critique of the vacancy model; 2.5.2.5 Interstitials; 2.5.2.6 Analysis of exchange interactions; 2.5.2.7 Ga-vacancy clusters; 2.5.2.8 Results of percolation theory; 2.5.2.9 Fermi-level pinning near clusters; 2.5.3 Growth simulations of clustering; 2.5.3.1 Experimental evidence for clustering and role of extended defects; 2.5.3.2 Discussion; 2.5.4 Summary; Acknowledgments; References. 3 -- Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles. Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Doped semiconductors. http://id.loc.gov/authorities/subjects/sh85039078 Semi-conducteurs. Semi-conducteurs dopés. semiconductor. aat TECHNOLOGY & ENGINEERING Mechanical. bisacsh Doped semiconductors fast Semiconductors fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85119903 http://id.loc.gov/authorities/subjects/sh85039078 |
| title | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / |
| title_auth | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / |
| title_exact_search | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / |
| title_full | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / edited by Volkmar Dierolf, Ian Ferguson, John M. Zavada. |
| title_fullStr | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / edited by Volkmar Dierolf, Ian Ferguson, John M. Zavada. |
| title_full_unstemmed | Rare earth and transition metal doping of semiconductor materials : synthesis, magnetic properties and room temperature spintronics / edited by Volkmar Dierolf, Ian Ferguson, John M. Zavada. |
| title_short | Rare earth and transition metal doping of semiconductor materials : |
| title_sort | rare earth and transition metal doping of semiconductor materials synthesis magnetic properties and room temperature spintronics |
| title_sub | synthesis, magnetic properties and room temperature spintronics / |
| topic | Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Doped semiconductors. http://id.loc.gov/authorities/subjects/sh85039078 Semi-conducteurs. Semi-conducteurs dopés. semiconductor. aat TECHNOLOGY & ENGINEERING Mechanical. bisacsh Doped semiconductors fast Semiconductors fast |
| topic_facet | Semiconductors. Doped semiconductors. Semi-conducteurs. Semi-conducteurs dopés. semiconductor. TECHNOLOGY & ENGINEERING Mechanical. Doped semiconductors Semiconductors Electronic book. |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1144142 https://www.sciencedirect.com/science/book/9780081000410 |
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