Silicon carbide and related materials 2013 /:
The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invi...
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| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Switzerland :
Trans Tech Publications,
2014.
|
| Schriftenreihe: | Materials science forum ;
v. 778-780. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. |
| Beschreibung: | "The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface |
| Beschreibung: | 1 online resource (1205 pages) : illustrations (some color) |
| Bibliographie: | Includes bibliographical references and indexes. |
| ISBN: | 9783038263913 3038263915 |
| ISSN: | 0255-5476 ; 1662-9752 |
Internformat
MARC
| LEADER | 00000cam a2200000 i 4500 | ||
|---|---|---|---|
| 001 | ZDB-4-EBA-ocn872573051 | ||
| 003 | OCoLC | ||
| 005 | 20241004212047.0 | ||
| 006 | m o d | ||
| 007 | cr ||||||||||| | ||
| 008 | 140313t20142014sz a ob 101 0 eng d | ||
| 040 | |a CUS |b eng |e rda |e pn |c CUS |d SEA |d E7B |d N$T |d OCLCO |d OCLCQ |d OCLCF |d YDXCP |d EBLCP |d DEBSZ |d OCLCO |d OCL |d AGLDB |d OCLCQ |d MERUC |d ICG |d ZCU |d OCL |d VTS |d OCLCQ |d STF |d DKC |d OCLCQ |d M8D |d OCLCQ |d AJS |d OCLCO |d OCLCQ |d UKAHL |d OCLCO | ||
| 019 | |a 878138273 |a 899159009 | ||
| 020 | |a 9783038263913 |q (electronic bk.) | ||
| 020 | |a 3038263915 |q (electronic bk.) | ||
| 020 | |z 9783038350101 | ||
| 035 | |a (OCoLC)872573051 |z (OCoLC)878138273 |z (OCoLC)899159009 | ||
| 050 | 4 | |a TK7871.15.S56 |b .S555 2014eb | |
| 072 | 7 | |a TEC |x 009070 |2 bisacsh | |
| 082 | 7 | |a 621.38152 |2 23 | |
| 049 | |a MAIN | ||
| 111 | 2 | |a International Conference on Silicon Carbide and Related Materials |n (15th : |d 2013 : |c Miyazaki-shi, Japan) | |
| 245 | 1 | 0 | |a Silicon carbide and related materials 2013 / |c edited by Hajime Okumura [and eight others]. |
| 264 | 1 | |a Switzerland : |b Trans Tech Publications, |c 2014. | |
| 264 | 4 | |c ©2014 | |
| 300 | |a 1 online resource (1205 pages) : |b illustrations (some color) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum, |x 0255-5476 ; |v vols. 778-780 | |
| 500 | |a "The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface | ||
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014). | |
| 520 | |a The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. | ||
| 505 | 0 | |a Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth. | |
| 505 | 8 | |a Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method. | |
| 505 | 8 | |a Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity. | |
| 505 | 8 | |a Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle. | |
| 505 | 8 | |a Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate. | |
| 650 | 0 | |a Silicon carbide |v Congresses. | |
| 650 | 0 | |a Silicon carbide |x Electric properties |v Congresses. | |
| 650 | 0 | |a Silicon-carbide thin films |v Congresses. | |
| 650 | 0 | |a Nitrides |v Congresses. | |
| 650 | 0 | |a Graphene |v Congresses. | |
| 650 | 0 | |a Crystal growth |v Congresses. | |
| 650 | 0 | |a Wide gap semiconductors |x Materials |v Congresses. | |
| 650 | 0 | |a Wide gap semiconductors |x Materials |x Technological innovations |v Congresses. | |
| 650 | 6 | |a Couches minces de carbure de silicium |v Congrès. | |
| 650 | 6 | |a Nitrures |v Congrès. | |
| 650 | 6 | |a Graphène |v Congrès. | |
| 650 | 6 | |a Cristaux |x Croissance |v Congrès. | |
| 650 | 6 | |a Semi-conducteurs à large bande interdite |x Matériaux |v Congrès. | |
| 650 | 6 | |a Semi-conducteurs à large bande interdite |x Matériaux |x Innovations |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Crystal growth |2 fast | |
| 650 | 7 | |a Graphene |2 fast | |
| 650 | 7 | |a Nitrides |2 fast | |
| 650 | 7 | |a Silicon carbide |2 fast | |
| 650 | 7 | |a Silicon carbide |x Electric properties |2 fast | |
| 650 | 7 | |a Silicon-carbide thin films |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Okumura, Hajime, |e editor. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Silicon Carbide and Related Materials (15th : 2013 : Miyazaki-shi, Japan). |t Silicon carbide and related materials : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. |d Zurich, Switzerland : TTP, ©2014 |h 1230 pages |k Materials science forum ; Volume 778-780 |x 1662-9752 |
| 830 | 0 | |a Materials science forum ; |v v. 778-780. |0 http://id.loc.gov/authorities/names/no94007967 | |
| 856 | 4 | 0 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=711956 |3 Volltext |
| 938 | |a Askews and Holts Library Services |b ASKH |n BDZ0034364508 | ||
| 938 | |a EBL - Ebook Library |b EBLB |n EBL1910707 | ||
| 938 | |a ebrary |b EBRY |n ebr10846253 | ||
| 938 | |a EBSCOhost |b EBSC |n 711956 | ||
| 938 | |a YBP Library Services |b YANK |n 11697649 | ||
| 994 | |a 92 |b GEBAY | ||
| 912 | |a ZDB-4-EBA | ||
| 049 | |a DE-863 | ||
Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocn872573051 |
|---|---|
| _version_ | 1816882263583883265 |
| adam_text | |
| any_adam_object | |
| author2 | Okumura, Hajime |
| author2_role | edt |
| author2_variant | h o ho |
| author_corporate | International Conference on Silicon Carbide and Related Materials Miyazaki-shi, Japan |
| author_corporate_role | |
| author_facet | Okumura, Hajime International Conference on Silicon Carbide and Related Materials Miyazaki-shi, Japan |
| author_sort | International Conference on Silicon Carbide and Related Materials Miyazaki-shi, Japan |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.15.S56 .S555 2014eb |
| callnumber-search | TK7871.15.S56 .S555 2014eb |
| callnumber-sort | TK 47871.15 S56 S555 42014EB |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth. Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method. Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity. Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle. Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate. |
| ctrlnum | (OCoLC)872573051 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic Conference Proceeding eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>07570cam a2200817 i 4500</leader><controlfield tag="001">ZDB-4-EBA-ocn872573051</controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20241004212047.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr |||||||||||</controlfield><controlfield tag="008">140313t20142014sz a ob 101 0 eng d</controlfield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">CUS</subfield><subfield code="b">eng</subfield><subfield code="e">rda</subfield><subfield code="e">pn</subfield><subfield code="c">CUS</subfield><subfield code="d">SEA</subfield><subfield code="d">E7B</subfield><subfield code="d">N$T</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCF</subfield><subfield code="d">YDXCP</subfield><subfield code="d">EBLCP</subfield><subfield code="d">DEBSZ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCL</subfield><subfield code="d">AGLDB</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">MERUC</subfield><subfield code="d">ICG</subfield><subfield code="d">ZCU</subfield><subfield code="d">OCL</subfield><subfield code="d">VTS</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">STF</subfield><subfield code="d">DKC</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">M8D</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">AJS</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">UKAHL</subfield><subfield code="d">OCLCO</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">878138273</subfield><subfield code="a">899159009</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783038263913</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3038263915</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9783038350101</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)872573051</subfield><subfield code="z">(OCoLC)878138273</subfield><subfield code="z">(OCoLC)899159009</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">TK7871.15.S56</subfield><subfield code="b">.S555 2014eb</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">009070</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">23</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">International Conference on Silicon Carbide and Related Materials</subfield><subfield code="n">(15th :</subfield><subfield code="d">2013 :</subfield><subfield code="c">Miyazaki-shi, Japan)</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon carbide and related materials 2013 /</subfield><subfield code="c">edited by Hajime Okumura [and eight others].</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Switzerland :</subfield><subfield code="b">Trans Tech Publications,</subfield><subfield code="c">2014.</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">©2014</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (1205 pages) :</subfield><subfield code="b">illustrations (some color)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Materials science forum,</subfield><subfield code="x">0255-5476 ;</subfield><subfield code="v">vols. 778-780</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">"The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and indexes.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014).</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Silicon carbide</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Silicon carbide</subfield><subfield code="x">Electric properties</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Silicon-carbide thin films</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Nitrides</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Graphene</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Crystal growth</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Wide gap semiconductors</subfield><subfield code="x">Materials</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Wide gap semiconductors</subfield><subfield code="x">Materials</subfield><subfield code="x">Technological innovations</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Couches minces de carbure de silicium</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Nitrures</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Graphène</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Cristaux</subfield><subfield code="x">Croissance</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Semi-conducteurs à large bande interdite</subfield><subfield code="x">Matériaux</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Semi-conducteurs à large bande interdite</subfield><subfield code="x">Matériaux</subfield><subfield code="x">Innovations</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Mechanical.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Crystal growth</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Graphene</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrides</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="x">Electric properties</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon-carbide thin films</subfield><subfield code="2">fast</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="a">Conference papers and proceedings</subfield><subfield code="2">fast</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Okumura, Hajime,</subfield><subfield code="e">editor.</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="a">International Conference on Silicon Carbide and Related Materials (15th : 2013 : Miyazaki-shi, Japan).</subfield><subfield code="t">Silicon carbide and related materials : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.</subfield><subfield code="d">Zurich, Switzerland : TTP, ©2014</subfield><subfield code="h">1230 pages</subfield><subfield code="k">Materials science forum ; Volume 778-780</subfield><subfield code="x">1662-9752</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Materials science forum ;</subfield><subfield code="v">v. 778-780.</subfield><subfield code="0">http://id.loc.gov/authorities/names/no94007967</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=711956</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">Askews and Holts Library Services</subfield><subfield code="b">ASKH</subfield><subfield code="n">BDZ0034364508</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBL - Ebook Library</subfield><subfield code="b">EBLB</subfield><subfield code="n">EBL1910707</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ebrary</subfield><subfield code="b">EBRY</subfield><subfield code="n">ebr10846253</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">711956</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">11697649</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-863</subfield></datafield></record></collection> |
| genre | Conference papers and proceedings fast |
| genre_facet | Conference papers and proceedings |
| id | ZDB-4-EBA-ocn872573051 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:25:50Z |
| institution | BVB |
| isbn | 9783038263913 3038263915 |
| issn | 0255-5476 ; 1662-9752 |
| language | English |
| oclc_num | 872573051 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (1205 pages) : illustrations (some color) |
| psigel | ZDB-4-EBA |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| publisher | Trans Tech Publications, |
| record_format | marc |
| series | Materials science forum ; |
| series2 | Materials science forum, |
| spelling | International Conference on Silicon Carbide and Related Materials (15th : 2013 : Miyazaki-shi, Japan) Silicon carbide and related materials 2013 / edited by Hajime Okumura [and eight others]. Switzerland : Trans Tech Publications, 2014. ©2014 1 online resource (1205 pages) : illustrations (some color) text txt rdacontent computer c rdamedia online resource cr rdacarrier Materials science forum, 0255-5476 ; vols. 778-780 "The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface Includes bibliographical references and indexes. Online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014). The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T. Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth. Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method. Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity. Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle. Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate. Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Nitrides Congresses. Graphene Congresses. Crystal growth Congresses. Wide gap semiconductors Materials Congresses. Wide gap semiconductors Materials Technological innovations Congresses. Couches minces de carbure de silicium Congrès. Nitrures Congrès. Graphène Congrès. Cristaux Croissance Congrès. Semi-conducteurs à large bande interdite Matériaux Congrès. Semi-conducteurs à large bande interdite Matériaux Innovations Congrès. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Crystal growth fast Graphene fast Nitrides fast Silicon carbide fast Silicon carbide Electric properties fast Silicon-carbide thin films fast Conference papers and proceedings fast Okumura, Hajime, editor. Print version: International Conference on Silicon Carbide and Related Materials (15th : 2013 : Miyazaki-shi, Japan). Silicon carbide and related materials : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. Zurich, Switzerland : TTP, ©2014 1230 pages Materials science forum ; Volume 778-780 1662-9752 Materials science forum ; v. 778-780. http://id.loc.gov/authorities/names/no94007967 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=711956 Volltext |
| spellingShingle | Silicon carbide and related materials 2013 / Materials science forum ; Silicon Carbide and Related Materials 2013; Preface, Committees, Sponsors and Overview; Table of Contents; Chapter 1: SiC Bulk Growth; 1.1 PVT and CVD; Open Issues in SiC Bulk Growth; Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography; Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation; Development of RAF Quality 150mm 4H-SiC Wafer; Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth; Effect of TaC-Coated Crucible on SiC Single Crystal Growth. Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTComparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT; Spiral Step Dissociation on PVT Grown SiC Crystals; Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-Axis; Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique; 4H-SiC Bulk Growth Using High-Temperature Gas Source Method; Fast 4H-SiC Crystal Growth by High-Temperature Gas Source Method. Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method1.2 Solution Growth; Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC; Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent; Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling Approach; Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity. Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsChapter 2: SiC Epitaxial Growth; 2.1 Homoepitaxial Growth; Evolution of Fast 4H-SiC CVD Growth and Defect Reduction Techniques; Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density; Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications; Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle. Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorC-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput; Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor; Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation; 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106; Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate; Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate. Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Nitrides Congresses. Graphene Congresses. Crystal growth Congresses. Wide gap semiconductors Materials Congresses. Wide gap semiconductors Materials Technological innovations Congresses. Couches minces de carbure de silicium Congrès. Nitrures Congrès. Graphène Congrès. Cristaux Croissance Congrès. Semi-conducteurs à large bande interdite Matériaux Congrès. Semi-conducteurs à large bande interdite Matériaux Innovations Congrès. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Crystal growth fast Graphene fast Nitrides fast Silicon carbide fast Silicon carbide Electric properties fast Silicon-carbide thin films fast |
| title | Silicon carbide and related materials 2013 / |
| title_auth | Silicon carbide and related materials 2013 / |
| title_exact_search | Silicon carbide and related materials 2013 / |
| title_full | Silicon carbide and related materials 2013 / edited by Hajime Okumura [and eight others]. |
| title_fullStr | Silicon carbide and related materials 2013 / edited by Hajime Okumura [and eight others]. |
| title_full_unstemmed | Silicon carbide and related materials 2013 / edited by Hajime Okumura [and eight others]. |
| title_short | Silicon carbide and related materials 2013 / |
| title_sort | silicon carbide and related materials 2013 |
| topic | Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Nitrides Congresses. Graphene Congresses. Crystal growth Congresses. Wide gap semiconductors Materials Congresses. Wide gap semiconductors Materials Technological innovations Congresses. Couches minces de carbure de silicium Congrès. Nitrures Congrès. Graphène Congrès. Cristaux Croissance Congrès. Semi-conducteurs à large bande interdite Matériaux Congrès. Semi-conducteurs à large bande interdite Matériaux Innovations Congrès. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Crystal growth fast Graphene fast Nitrides fast Silicon carbide fast Silicon carbide Electric properties fast Silicon-carbide thin films fast |
| topic_facet | Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Nitrides Congresses. Graphene Congresses. Crystal growth Congresses. Wide gap semiconductors Materials Congresses. Wide gap semiconductors Materials Technological innovations Congresses. Couches minces de carbure de silicium Congrès. Nitrures Congrès. Graphène Congrès. Cristaux Croissance Congrès. Semi-conducteurs à large bande interdite Matériaux Congrès. Semi-conducteurs à large bande interdite Matériaux Innovations Congrès. TECHNOLOGY & ENGINEERING Mechanical. Crystal growth Graphene Nitrides Silicon carbide Silicon carbide Electric properties Silicon-carbide thin films Conference papers and proceedings |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=711956 |
| work_keys_str_mv | AT internationalconferenceonsiliconcarbideandrelatedmaterialsmiyazakishijapan siliconcarbideandrelatedmaterials2013 AT okumurahajime siliconcarbideandrelatedmaterials2013 |