Ultra clean processing of semiconductor surfaces XI :: selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium /
This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications....
Gespeichert in:
| Körperschaft: | |
|---|---|
| Weitere Verfasser: | , , |
| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Durnten-Zurich, Switzerland :
Trans Tech Publications Ltd.,
[2013]
|
| Schriftenreihe: | Diffusion and defect data. Solid state phenomena ;
v. 195. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also t. |
| Beschreibung: | 1 online resource (328 pages) : illustrations (black and white) |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9783038139089 3038139084 9781680151091 1680151096 |
| ISSN: | 1012-0394 ; |
| Zugangseinschränkungen: | Access restricted to Ryerson students, faculty and staff. |
Internformat
MARC
| LEADER | 00000cam a2200000Mi 4500 | ||
|---|---|---|---|
| 001 | ZDB-4-EBA-ocn868960708 | ||
| 003 | OCoLC | ||
| 005 | 20241004212047.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 130228t20132013sz a ob 101 0 eng d | ||
| 010 | |a 2012538789 | ||
| 040 | |a E7B |b eng |e rda |e pn |c E7B |d OCLCO |d KNOVL |d N$T |d ZCU |d KNOVL |d OCLCF |d COO |d YDXCP |d CUS |d OCLCO |d EBLCP |d REB |d DEBSZ |d OCLCO |d OCLCQ |d OCLCO |d OCL |d OCLCO |d STF |d OCLCQ |d AGLDB |d OCLCQ |d VT2 |d OCLCQ |d VTS |d CEF |d RRP |d OCLCQ |d UWW |d AU@ |d M8D |d OCLCQ |d OCL |d OCLCQ |d OCL |d AJS |d TEF |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 824172390 |a 883342170 |a 892191613 |a 897641182 |a 957735202 |a 958081456 |a 1087372328 |a 1124348959 | ||
| 020 | |a 9783038139089 |q (electronic bk.) | ||
| 020 | |a 3038139084 |q (electronic bk.) | ||
| 020 | |a 9781680151091 |q (electronic bk.) | ||
| 020 | |a 1680151096 |q (electronic bk.) | ||
| 020 | |z 9783037855270 |q (paperback) | ||
| 020 | |z 3037855274 |q (paperback) | ||
| 035 | |a (OCoLC)868960708 |z (OCoLC)824172390 |z (OCoLC)883342170 |z (OCoLC)892191613 |z (OCoLC)897641182 |z (OCoLC)957735202 |z (OCoLC)958081456 |z (OCoLC)1087372328 |z (OCoLC)1124348959 | ||
| 037 | |b 00128348 | ||
| 050 | 4 | |a QC611.6.S9 |b I68 2013eb | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 072 | 7 | |a SCI |x 022000 |2 bisacsh | |
| 082 | 7 | |a 537.622 |2 23 | |
| 049 | |a MAIN | ||
| 111 | 2 | |a International Symposium on Ultra Clean Processing of Semiconductor Surfaces |n (11th : |d 2012 : |c Ghent, Belgium) |0 http://id.loc.gov/authorities/names/nb2013018963 | |
| 245 | 1 | 0 | |a Ultra clean processing of semiconductor surfaces XI : |b selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / |c edited by Paul Mertens, Marc Meuris and Marc Heyns. |
| 246 | 3 | |a UCPSS 2012 | |
| 264 | 1 | |a Durnten-Zurich, Switzerland : |b Trans Tech Publications Ltd., |c [2013] | |
| 264 | 4 | |c ©2013 | |
| 300 | |a 1 online resource (328 pages) : |b illustrations (black and white) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Solid state phenomena, |x 1012-0394 ; |v v. 195 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Online resource; title from PDF title page (ebrary, viewed November 1, 2013). | |
| 505 | 0 | |a Ultra Clean Processing of Semiconductor Surfaces XI; Preface, Committees and Acknowledgements; Table of Contents; Keynote; Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors; Chapter 1: Cleaning for FEOL Applications; Cleaning Technology for Advanced Devices beyond 20 nm Node; Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue; Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals; Development of a Integrated Dry/Wet Hybrid Cleaning System. | |
| 505 | 8 | |a New Chemical Vapor Delivery Systems for Surface CleaningRemoval of UV Cured Resin Using Hybrid Cleaning Method; Chapter 2: Wet Etching; Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process; Wet Etching Behavior of Poly-Si in TMAH Solution; Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor; Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent; SiO2 Etch Rate Modification by Ion Implantation; Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch. | |
| 505 | 8 | |a Chapter 3: Surface Chemistry and FunctionalisationChemical Control of Surfaces: From Fundamental Understanding to Practical Application; Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance; A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor; Clean Process Mechanism of HKMG during N-PMOS Patterning; Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers); Evaluation of CD Fluctuation on QC Monitor. | |
| 505 | 8 | |a In Situ Studies of III-V Surfaces and High-K Atomic Layer DepositionALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry; Cleaning of III-V Materials: Surface Chemistry Considerations; Chapter 4: Cleaning for BEOL and 3D Applications; Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features; The Risk of Pattern Collapse for Structures in Future Logic Devices. | |
| 505 | 8 | |a Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue RemovalWet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process; Analysis of Oxidized Copper Surface and its Evolution; Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning; Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture -- A Case Study. | |
| 520 | |a This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also t. | ||
| 506 | |a Access restricted to Ryerson students, faculty and staff. |5 CaOTR | ||
| 650 | 0 | |a Electrical engineering |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Surfaces |v Congresses. | |
| 650 | 6 | |a Génie électrique |v Congrès. | |
| 650 | 6 | |a Semi-conducteurs |x Surfaces |v Congrès. | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Electrical engineering |2 fast | |
| 650 | 7 | |a Semiconductors |x Surfaces |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Heyns, Marc. |0 http://id.loc.gov/authorities/names/nr2002012446 | |
| 700 | 1 | |a Mertens, Paul. |0 http://id.loc.gov/authorities/names/nr2002012447 | |
| 700 | 1 | |a Meuris, Marc. |0 http://id.loc.gov/authorities/names/nr2002012448 | |
| 776 | 0 | 8 | |i Print version: |t Ultra clean processing of semiconductor surfaces XI. |d Durnten-Zurich, Switzerland ; Trans Tech Publications, [2013] |h xiv, 332 pages : illustrations (black and white) ; 24 cm. |k Diffusion and defect data. Pt. B, Solid state phenomena ; v. 195 |z 9783037855270 |z 3037855274 |w (DLC) 2012538789 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. B, |p Solid state phenomena ; |v v. 195. |0 http://id.loc.gov/authorities/names/no00104273 | |
| 856 | 4 | 0 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646329 |3 Volltext |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL1872981 | ||
| 938 | |a ebrary |b EBRY |n ebr10777722 | ||
| 938 | |a EBSCOhost |b EBSC |n 646329 | ||
| 938 | |a YBP Library Services |b YANK |n 11211308 | ||
| 994 | |a 92 |b GEBAY | ||
| 912 | |a ZDB-4-EBA | ||
| 049 | |a DE-863 | ||
Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocn868960708 |
|---|---|
| _version_ | 1816882258120802304 |
| adam_text | |
| any_adam_object | |
| author2 | Heyns, Marc Mertens, Paul Meuris, Marc |
| author2_role | |
| author2_variant | m h mh p m pm m m mm |
| author_GND | http://id.loc.gov/authorities/names/nr2002012446 http://id.loc.gov/authorities/names/nr2002012447 http://id.loc.gov/authorities/names/nr2002012448 |
| author_corporate | International Symposium on Ultra Clean Processing of Semiconductor Surfaces Ghent, Belgium |
| author_corporate_role | |
| author_facet | Heyns, Marc Mertens, Paul Meuris, Marc International Symposium on Ultra Clean Processing of Semiconductor Surfaces Ghent, Belgium |
| author_sort | International Symposium on Ultra Clean Processing of Semiconductor Surfaces Ghent, Belgium |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611.6.S9 I68 2013eb |
| callnumber-search | QC611.6.S9 I68 2013eb |
| callnumber-sort | QC 3611.6 S9 I68 42013EB |
| callnumber-subject | QC - Physics |
| collection | ZDB-4-EBA |
| contents | Ultra Clean Processing of Semiconductor Surfaces XI; Preface, Committees and Acknowledgements; Table of Contents; Keynote; Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors; Chapter 1: Cleaning for FEOL Applications; Cleaning Technology for Advanced Devices beyond 20 nm Node; Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue; Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals; Development of a Integrated Dry/Wet Hybrid Cleaning System. New Chemical Vapor Delivery Systems for Surface CleaningRemoval of UV Cured Resin Using Hybrid Cleaning Method; Chapter 2: Wet Etching; Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process; Wet Etching Behavior of Poly-Si in TMAH Solution; Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor; Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent; SiO2 Etch Rate Modification by Ion Implantation; Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch. Chapter 3: Surface Chemistry and FunctionalisationChemical Control of Surfaces: From Fundamental Understanding to Practical Application; Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance; A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor; Clean Process Mechanism of HKMG during N-PMOS Patterning; Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers); Evaluation of CD Fluctuation on QC Monitor. In Situ Studies of III-V Surfaces and High-K Atomic Layer DepositionALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry; Cleaning of III-V Materials: Surface Chemistry Considerations; Chapter 4: Cleaning for BEOL and 3D Applications; Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features; The Risk of Pattern Collapse for Structures in Future Logic Devices. Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue RemovalWet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process; Analysis of Oxidized Copper Surface and its Evolution; Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning; Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture -- A Case Study. |
| ctrlnum | (OCoLC)868960708 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Electronic Conference Proceeding eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>07228cam a2200757Mi 4500</leader><controlfield tag="001">ZDB-4-EBA-ocn868960708</controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20241004212047.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr cn|||||||||</controlfield><controlfield tag="008">130228t20132013sz a ob 101 0 eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a"> 2012538789</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">E7B</subfield><subfield code="b">eng</subfield><subfield code="e">rda</subfield><subfield code="e">pn</subfield><subfield code="c">E7B</subfield><subfield code="d">OCLCO</subfield><subfield code="d">KNOVL</subfield><subfield code="d">N$T</subfield><subfield code="d">ZCU</subfield><subfield code="d">KNOVL</subfield><subfield code="d">OCLCF</subfield><subfield code="d">COO</subfield><subfield code="d">YDXCP</subfield><subfield code="d">CUS</subfield><subfield code="d">OCLCO</subfield><subfield code="d">EBLCP</subfield><subfield code="d">REB</subfield><subfield code="d">DEBSZ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCL</subfield><subfield code="d">OCLCO</subfield><subfield code="d">STF</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">AGLDB</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">VT2</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">VTS</subfield><subfield code="d">CEF</subfield><subfield code="d">RRP</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">UWW</subfield><subfield code="d">AU@</subfield><subfield code="d">M8D</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCL</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCL</subfield><subfield code="d">AJS</subfield><subfield code="d">TEF</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">824172390</subfield><subfield code="a">883342170</subfield><subfield code="a">892191613</subfield><subfield code="a">897641182</subfield><subfield code="a">957735202</subfield><subfield code="a">958081456</subfield><subfield code="a">1087372328</subfield><subfield code="a">1124348959</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783038139089</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3038139084</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781680151091</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1680151096</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9783037855270</subfield><subfield code="q">(paperback)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">3037855274</subfield><subfield code="q">(paperback)</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)868960708</subfield><subfield code="z">(OCoLC)824172390</subfield><subfield code="z">(OCoLC)883342170</subfield><subfield code="z">(OCoLC)892191613</subfield><subfield code="z">(OCoLC)897641182</subfield><subfield code="z">(OCoLC)957735202</subfield><subfield code="z">(OCoLC)958081456</subfield><subfield code="z">(OCoLC)1087372328</subfield><subfield code="z">(OCoLC)1124348959</subfield></datafield><datafield tag="037" ind1=" " ind2=" "><subfield code="b">00128348</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">QC611.6.S9</subfield><subfield code="b">I68 2013eb</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">SCI</subfield><subfield code="x">021000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">SCI</subfield><subfield code="x">022000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">537.622</subfield><subfield code="2">23</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">International Symposium on Ultra Clean Processing of Semiconductor Surfaces</subfield><subfield code="n">(11th :</subfield><subfield code="d">2012 :</subfield><subfield code="c">Ghent, Belgium)</subfield><subfield code="0">http://id.loc.gov/authorities/names/nb2013018963</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ultra clean processing of semiconductor surfaces XI :</subfield><subfield code="b">selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium /</subfield><subfield code="c">edited by Paul Mertens, Marc Meuris and Marc Heyns.</subfield></datafield><datafield tag="246" ind1="3" ind2=" "><subfield code="a">UCPSS 2012</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Durnten-Zurich, Switzerland :</subfield><subfield code="b">Trans Tech Publications Ltd.,</subfield><subfield code="c">[2013]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">©2013</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (328 pages) :</subfield><subfield code="b">illustrations (black and white)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Solid state phenomena,</subfield><subfield code="x">1012-0394 ;</subfield><subfield code="v">v. 195</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Online resource; title from PDF title page (ebrary, viewed November 1, 2013).</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Ultra Clean Processing of Semiconductor Surfaces XI; Preface, Committees and Acknowledgements; Table of Contents; Keynote; Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors; Chapter 1: Cleaning for FEOL Applications; Cleaning Technology for Advanced Devices beyond 20 nm Node; Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue; Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals; Development of a Integrated Dry/Wet Hybrid Cleaning System.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">New Chemical Vapor Delivery Systems for Surface CleaningRemoval of UV Cured Resin Using Hybrid Cleaning Method; Chapter 2: Wet Etching; Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process; Wet Etching Behavior of Poly-Si in TMAH Solution; Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor; Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent; SiO2 Etch Rate Modification by Ion Implantation; Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Chapter 3: Surface Chemistry and FunctionalisationChemical Control of Surfaces: From Fundamental Understanding to Practical Application; Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance; A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor; Clean Process Mechanism of HKMG during N-PMOS Patterning; Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers); Evaluation of CD Fluctuation on QC Monitor.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">In Situ Studies of III-V Surfaces and High-K Atomic Layer DepositionALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry; Cleaning of III-V Materials: Surface Chemistry Considerations; Chapter 4: Cleaning for BEOL and 3D Applications; Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features; The Risk of Pattern Collapse for Structures in Future Logic Devices.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue RemovalWet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process; Analysis of Oxidized Copper Surface and its Evolution; Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning; Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture -- A Case Study.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also t.</subfield></datafield><datafield tag="506" ind1=" " ind2=" "><subfield code="a">Access restricted to Ryerson students, faculty and staff.</subfield><subfield code="5">CaOTR</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Electrical engineering</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Semiconductors</subfield><subfield code="x">Surfaces</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Génie électrique</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Semi-conducteurs</subfield><subfield code="x">Surfaces</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SCIENCE</subfield><subfield code="x">Physics</subfield><subfield code="x">Electricity.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SCIENCE</subfield><subfield code="x">Physics</subfield><subfield code="x">Electromagnetism.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Electrical engineering</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors</subfield><subfield code="x">Surfaces</subfield><subfield code="2">fast</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="a">Conference papers and proceedings</subfield><subfield code="2">fast</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Heyns, Marc.</subfield><subfield code="0">http://id.loc.gov/authorities/names/nr2002012446</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mertens, Paul.</subfield><subfield code="0">http://id.loc.gov/authorities/names/nr2002012447</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meuris, Marc.</subfield><subfield code="0">http://id.loc.gov/authorities/names/nr2002012448</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="t">Ultra clean processing of semiconductor surfaces XI.</subfield><subfield code="d">Durnten-Zurich, Switzerland ; Trans Tech Publications, [2013]</subfield><subfield code="h">xiv, 332 pages : illustrations (black and white) ; 24 cm.</subfield><subfield code="k">Diffusion and defect data. Pt. B, Solid state phenomena ; v. 195</subfield><subfield code="z">9783037855270</subfield><subfield code="z">3037855274</subfield><subfield code="w">(DLC) 2012538789</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Diffusion and defect data.</subfield><subfield code="n">Pt. B,</subfield><subfield code="p">Solid state phenomena ;</subfield><subfield code="v">v. 195.</subfield><subfield code="0">http://id.loc.gov/authorities/names/no00104273</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646329</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ProQuest Ebook Central</subfield><subfield code="b">EBLB</subfield><subfield code="n">EBL1872981</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ebrary</subfield><subfield code="b">EBRY</subfield><subfield code="n">ebr10777722</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">646329</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">11211308</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-863</subfield></datafield></record></collection> |
| genre | Conference papers and proceedings fast |
| genre_facet | Conference papers and proceedings |
| id | ZDB-4-EBA-ocn868960708 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:25:45Z |
| institution | BVB |
| institution_GND | http://id.loc.gov/authorities/names/nb2013018963 |
| isbn | 9783038139089 3038139084 9781680151091 1680151096 |
| issn | 1012-0394 ; |
| language | English |
| lccn | 2012538789 |
| oclc_num | 868960708 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (328 pages) : illustrations (black and white) |
| psigel | ZDB-4-EBA |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Trans Tech Publications Ltd., |
| record_format | marc |
| series | Diffusion and defect data. Solid state phenomena ; |
| series2 | Solid state phenomena, |
| spelling | International Symposium on Ultra Clean Processing of Semiconductor Surfaces (11th : 2012 : Ghent, Belgium) http://id.loc.gov/authorities/names/nb2013018963 Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / edited by Paul Mertens, Marc Meuris and Marc Heyns. UCPSS 2012 Durnten-Zurich, Switzerland : Trans Tech Publications Ltd., [2013] ©2013 1 online resource (328 pages) : illustrations (black and white) text txt rdacontent computer c rdamedia online resource cr rdacarrier Solid state phenomena, 1012-0394 ; v. 195 Includes bibliographical references and index. Online resource; title from PDF title page (ebrary, viewed November 1, 2013). Ultra Clean Processing of Semiconductor Surfaces XI; Preface, Committees and Acknowledgements; Table of Contents; Keynote; Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors; Chapter 1: Cleaning for FEOL Applications; Cleaning Technology for Advanced Devices beyond 20 nm Node; Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue; Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals; Development of a Integrated Dry/Wet Hybrid Cleaning System. New Chemical Vapor Delivery Systems for Surface CleaningRemoval of UV Cured Resin Using Hybrid Cleaning Method; Chapter 2: Wet Etching; Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process; Wet Etching Behavior of Poly-Si in TMAH Solution; Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor; Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent; SiO2 Etch Rate Modification by Ion Implantation; Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch. Chapter 3: Surface Chemistry and FunctionalisationChemical Control of Surfaces: From Fundamental Understanding to Practical Application; Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance; A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor; Clean Process Mechanism of HKMG during N-PMOS Patterning; Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers); Evaluation of CD Fluctuation on QC Monitor. In Situ Studies of III-V Surfaces and High-K Atomic Layer DepositionALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry; Cleaning of III-V Materials: Surface Chemistry Considerations; Chapter 4: Cleaning for BEOL and 3D Applications; Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features; The Risk of Pattern Collapse for Structures in Future Logic Devices. Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue RemovalWet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process; Analysis of Oxidized Copper Surface and its Evolution; Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning; Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture -- A Case Study. This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also t. Access restricted to Ryerson students, faculty and staff. CaOTR Electrical engineering Congresses. Semiconductors Surfaces Congresses. Génie électrique Congrès. Semi-conducteurs Surfaces Congrès. SCIENCE Physics Electricity. bisacsh SCIENCE Physics Electromagnetism. bisacsh Electrical engineering fast Semiconductors Surfaces fast Conference papers and proceedings fast Heyns, Marc. http://id.loc.gov/authorities/names/nr2002012446 Mertens, Paul. http://id.loc.gov/authorities/names/nr2002012447 Meuris, Marc. http://id.loc.gov/authorities/names/nr2002012448 Print version: Ultra clean processing of semiconductor surfaces XI. Durnten-Zurich, Switzerland ; Trans Tech Publications, [2013] xiv, 332 pages : illustrations (black and white) ; 24 cm. Diffusion and defect data. Pt. B, Solid state phenomena ; v. 195 9783037855270 3037855274 (DLC) 2012538789 Diffusion and defect data. Pt. B, Solid state phenomena ; v. 195. http://id.loc.gov/authorities/names/no00104273 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646329 Volltext |
| spellingShingle | Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / Diffusion and defect data. Solid state phenomena ; Ultra Clean Processing of Semiconductor Surfaces XI; Preface, Committees and Acknowledgements; Table of Contents; Keynote; Silicon & beyond CMOS: The Path of Advanced Electronic Structure Engineering for Low-Voltage Transistors; Chapter 1: Cleaning for FEOL Applications; Cleaning Technology for Advanced Devices beyond 20 nm Node; Dummy Oxide Removal in High-K Last Process Integration how to Avoid Silicon Corrosion Issue; Implanted Photoresist Remover for Advanced Nodes Including SiGe, Ge and High K-Metals; Development of a Integrated Dry/Wet Hybrid Cleaning System. New Chemical Vapor Delivery Systems for Surface CleaningRemoval of UV Cured Resin Using Hybrid Cleaning Method; Chapter 2: Wet Etching; Selective Nickel Silicide Wet Etchback Chemistry for Low Temperature Anneal Process; Wet Etching Behavior of Poly-Si in TMAH Solution; Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor; Selective Nitride Etch by Using Fluorides in High Boiling Point Solvent; SiO2 Etch Rate Modification by Ion Implantation; Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch. Chapter 3: Surface Chemistry and FunctionalisationChemical Control of Surfaces: From Fundamental Understanding to Practical Application; Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance; A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor; Clean Process Mechanism of HKMG during N-PMOS Patterning; Study of Highly Selective and Sensitive Microarray Structure Based on Hydrophilic/Hydrophobic SAMs (Self-Assembled Monolayers); Evaluation of CD Fluctuation on QC Monitor. In Situ Studies of III-V Surfaces and High-K Atomic Layer DepositionALD Growth Behavior of High-K Nanolayers on Various Substrates Characterized by X-Ray Spectrometry in Gracing Incidence Geometry; Cleaning of III-V Materials: Surface Chemistry Considerations; Chapter 4: Cleaning for BEOL and 3D Applications; Unique Size-Dependent Challenges for BEOL Cleans in the Patterning of Sub-20 nm Features; The Risk of Pattern Collapse for Structures in Future Logic Devices. Determination of Surface Energy Characteristics of Plasma Processed Ultra Low-K Dielectrics for Optimized Wetting in Wet Chemical Plasma Etch Residue RemovalWet Removal of Post-Etch Residues by a Combination of UV Irradiation and a SC1 Process; Analysis of Oxidized Copper Surface and its Evolution; Introduction of a Dynamic Corrosion Inhibitor for Copper Interconnect Cleaning; Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture -- A Case Study. Electrical engineering Congresses. Semiconductors Surfaces Congresses. Génie électrique Congrès. Semi-conducteurs Surfaces Congrès. SCIENCE Physics Electricity. bisacsh SCIENCE Physics Electromagnetism. bisacsh Electrical engineering fast Semiconductors Surfaces fast |
| title | Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / |
| title_alt | UCPSS 2012 |
| title_auth | Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / |
| title_exact_search | Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / |
| title_full | Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / edited by Paul Mertens, Marc Meuris and Marc Heyns. |
| title_fullStr | Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / edited by Paul Mertens, Marc Meuris and Marc Heyns. |
| title_full_unstemmed | Ultra clean processing of semiconductor surfaces XI : selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / edited by Paul Mertens, Marc Meuris and Marc Heyns. |
| title_short | Ultra clean processing of semiconductor surfaces XI : |
| title_sort | ultra clean processing of semiconductor surfaces xi selected peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces ucpss september 17 19 2012 gent belgium |
| title_sub | selected, peer reviewed papers from the 11th international symposium on ultra clean processing of semiconductor surfaces (UCPSS), September 17-19, 2012, Gent, Belgium / |
| topic | Electrical engineering Congresses. Semiconductors Surfaces Congresses. Génie électrique Congrès. Semi-conducteurs Surfaces Congrès. SCIENCE Physics Electricity. bisacsh SCIENCE Physics Electromagnetism. bisacsh Electrical engineering fast Semiconductors Surfaces fast |
| topic_facet | Electrical engineering Congresses. Semiconductors Surfaces Congresses. Génie électrique Congrès. Semi-conducteurs Surfaces Congrès. SCIENCE Physics Electricity. SCIENCE Physics Electromagnetism. Electrical engineering Semiconductors Surfaces Conference papers and proceedings |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646329 |
| work_keys_str_mv | AT internationalsymposiumonultracleanprocessingofsemiconductorsurfacesghentbelgium ultracleanprocessingofsemiconductorsurfacesxiselectedpeerreviewedpapersfromthe11thinternationalsymposiumonultracleanprocessingofsemiconductorsurfacesucpssseptember17192012gentbelgium AT heynsmarc ultracleanprocessingofsemiconductorsurfacesxiselectedpeerreviewedpapersfromthe11thinternationalsymposiumonultracleanprocessingofsemiconductorsurfacesucpssseptember17192012gentbelgium AT mertenspaul ultracleanprocessingofsemiconductorsurfacesxiselectedpeerreviewedpapersfromthe11thinternationalsymposiumonultracleanprocessingofsemiconductorsurfacesucpssseptember17192012gentbelgium AT meurismarc ultracleanprocessingofsemiconductorsurfacesxiselectedpeerreviewedpapersfromthe11thinternationalsymposiumonultracleanprocessingofsemiconductorsurfacesucpssseptember17192012gentbelgium AT internationalsymposiumonultracleanprocessingofsemiconductorsurfacesghentbelgium ucpss2012 AT heynsmarc ucpss2012 AT mertenspaul ucpss2012 AT meurismarc ucpss2012 |