Silicon carbide and related materials 2012 :: selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation /
The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commerc...
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Weitere Verfasser: | , , , |
Format: | Elektronisch Tagungsbericht E-Book |
Sprache: | English |
Veröffentlicht: |
Durnten-Zurich, Switzerland :
Trans Tech Publications,
[2013]
|
Schriftenreihe: | Materials science forum ;
v. 740-742. |
Schlagworte: | |
Online-Zugang: | Volltext |
Zusammenfassung: | The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG. |
Beschreibung: | 1 online resource (xxiii, 1149 pages .). |
Bibliographie: | Includes bibliographical references and indexes. |
ISBN: | 3038260053 9783038260059 |
Internformat
MARC
LEADER | 00000cam a2200000Mi 4500 | ||
---|---|---|---|
001 | ZDB-4-EBA-ocn861212430 | ||
003 | OCoLC | ||
005 | 20241004212047.0 | ||
006 | m o d | ||
007 | cr |n||||||||| | ||
008 | 131021s2013 sz ob 101 0 eng d | ||
040 | |a YDXCP |b eng |e pn |c YDXCP |d N$T |d OCLCO |d OCLCF |d OCLCO |d OCLCQ |d EBLCP |d DEBSZ |d OCLCO |d OCL |d OCLCO |d OCLCQ |d OCLCO |d OCLCQ |d AGLDB |d OCLCQ |d VTS |d STF |d M8D |d OCLCQ |d AJS |d OCLCO |d OCLCQ |d OCLCO |d OCLCL | ||
019 | |a 897641295 | ||
020 | |a 3038260053 |q (electronic bk.) | ||
020 | |a 9783038260059 |q (electronic bk.) | ||
020 | |z 9783037856246 | ||
020 | |z 3037856246 | ||
035 | |a (OCoLC)861212430 |z (OCoLC)897641295 | ||
050 | 4 | |a TA401.3 |b .M3793 v. 740-742 |a TK7871.15.S56 | |
072 | 7 | |a TEC |x 009000 |2 bisacsh | |
072 | 7 | |a TEC |x 035000 |2 bisacsh | |
082 | 7 | |a 620.193 |2 23 | |
049 | |a MAIN | ||
111 | 2 | |a European Conference on Silicon Carbide and Related Materials |n (9th : |d 2012 : |c St. Petersburg, Russia) | |
245 | 1 | 0 | |a Silicon carbide and related materials 2012 : |b selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / |c edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein. |
264 | 1 | |a Durnten-Zurich, Switzerland : |b Trans Tech Publications, |c [2013] | |
300 | |a 1 online resource (xxiii, 1149 pages .). | ||
336 | |a text |b txt |2 rdacontent | ||
337 | |a computer |b c |2 rdamedia | ||
338 | |a online resource |b cr |2 rdacarrier | ||
490 | 1 | |a Materials science forum ; |v v. 740-742 | |
504 | |a Includes bibliographical references and indexes. | ||
588 | 0 | |a Print version record. | |
520 | |a The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG. | ||
650 | 0 | |a Silicon carbide |v Congresses. | |
650 | 0 | |a Silicon carbide |x Electric properties |v Congresses. | |
650 | 0 | |a Silicon-carbide thin films |v Congresses. | |
650 | 6 | |a Couches minces de carbure de silicium |v Congrès. | |
650 | 7 | |a TECHNOLOGY & ENGINEERING |x Engineering (General) |2 bisacsh | |
650 | 7 | |a TECHNOLOGY & ENGINEERING |x Reference. |2 bisacsh | |
650 | 7 | |a Silicon carbide |2 fast | |
650 | 7 | |a Silicon carbide |x Electric properties |2 fast | |
650 | 7 | |a Silicon-carbide thin films |2 fast | |
655 | 7 | |a Conference papers and proceedings |2 fast | |
700 | 1 | |a Lebedev, Alexander A., |e editor. | |
700 | 1 | |a Davydov, Sergey Uu, |e editor. | |
700 | 1 | |a Ivanov, Pavel A., |e editor. | |
700 | 1 | |a Levinshtein, Mikhail E., |e editor. | |
758 | |i has work: |a Silicon carbide and related materials 2012 (Text) |1 https://id.oclc.org/worldcat/entity/E39PCH4qdQvPkDHm8KMgBTgh73 |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
776 | 0 | 8 | |i Print version: |z 9783037856246 |z 3037856246 |
830 | 0 | |a Materials science forum ; |v v. 740-742. |0 http://id.loc.gov/authorities/names/no94007967 | |
856 | 4 | 0 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646392 |3 Volltext |
938 | |a ProQuest Ebook Central |b EBLB |n EBL1873079 | ||
938 | |a EBSCOhost |b EBSC |n 646392 | ||
938 | |a YBP Library Services |b YANK |n 11223037 | ||
994 | |a 92 |b GEBAY | ||
912 | |a ZDB-4-EBA | ||
049 | |a DE-863 |
Datensatz im Suchindex
DE-BY-FWS_katkey | ZDB-4-EBA-ocn861212430 |
---|---|
_version_ | 1816882248024064000 |
adam_text | |
any_adam_object | |
author2 | Lebedev, Alexander A. Davydov, Sergey Uu Ivanov, Pavel A. Levinshtein, Mikhail E. |
author2_role | edt edt edt edt |
author2_variant | a a l aa aal s u d su sud p a i pa pai m e l me mel |
author_corporate | European Conference on Silicon Carbide and Related Materials St. Petersburg, Russia |
author_corporate_role | |
author_facet | Lebedev, Alexander A. Davydov, Sergey Uu Ivanov, Pavel A. Levinshtein, Mikhail E. European Conference on Silicon Carbide and Related Materials St. Petersburg, Russia |
author_sort | European Conference on Silicon Carbide and Related Materials St. Petersburg, Russia |
building | Verbundindex |
bvnumber | localFWS |
callnumber-first | T - Technology |
callnumber-label | TA401 |
callnumber-raw | TA401.3 .M3793 v. 740-742 TK7871.15.S56 |
callnumber-search | TA401.3 .M3793 v. 740-742 TK7871.15.S56 |
callnumber-sort | TA 3401.3 M3793 V 3740 3742 T K7871 215. S56 |
callnumber-subject | TA - General and Civil Engineering |
collection | ZDB-4-EBA |
ctrlnum | (OCoLC)861212430 |
dewey-full | 620.193 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 620 - Engineering and allied operations |
dewey-raw | 620.193 |
dewey-search | 620.193 |
dewey-sort | 3620.193 |
dewey-tens | 620 - Engineering and allied operations |
format | Electronic Conference Proceeding eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03669cam a2200637Mi 4500</leader><controlfield tag="001">ZDB-4-EBA-ocn861212430</controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20241004212047.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr |n|||||||||</controlfield><controlfield tag="008">131021s2013 sz ob 101 0 eng d</controlfield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">YDXCP</subfield><subfield code="b">eng</subfield><subfield code="e">pn</subfield><subfield code="c">YDXCP</subfield><subfield code="d">N$T</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCF</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">EBLCP</subfield><subfield code="d">DEBSZ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCL</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">AGLDB</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">VTS</subfield><subfield code="d">STF</subfield><subfield code="d">M8D</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">AJS</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCL</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">897641295</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3038260053</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783038260059</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9783037856246</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">3037856246</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)861212430</subfield><subfield code="z">(OCoLC)897641295</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">TA401.3</subfield><subfield code="b">.M3793 v. 740-742</subfield><subfield code="a">TK7871.15.S56</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">009000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">035000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">620.193</subfield><subfield code="2">23</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">European Conference on Silicon Carbide and Related Materials</subfield><subfield code="n">(9th :</subfield><subfield code="d">2012 :</subfield><subfield code="c">St. Petersburg, Russia)</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon carbide and related materials 2012 :</subfield><subfield code="b">selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation /</subfield><subfield code="c">edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Durnten-Zurich, Switzerland :</subfield><subfield code="b">Trans Tech Publications,</subfield><subfield code="c">[2013]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (xxiii, 1149 pages .).</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Materials science forum ;</subfield><subfield code="v">v. 740-742</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and indexes.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Silicon carbide</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Silicon carbide</subfield><subfield code="x">Electric properties</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Silicon-carbide thin films</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Couches minces de carbure de silicium</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Engineering (General)</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Reference.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="x">Electric properties</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon-carbide thin films</subfield><subfield code="2">fast</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="a">Conference papers and proceedings</subfield><subfield code="2">fast</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lebedev, Alexander A.,</subfield><subfield code="e">editor.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Davydov, Sergey Uu,</subfield><subfield code="e">editor.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ivanov, Pavel A.,</subfield><subfield code="e">editor.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Levinshtein, Mikhail E.,</subfield><subfield code="e">editor.</subfield></datafield><datafield tag="758" ind1=" " ind2=" "><subfield code="i">has work:</subfield><subfield code="a">Silicon carbide and related materials 2012 (Text)</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCH4qdQvPkDHm8KMgBTgh73</subfield><subfield code="4">https://id.oclc.org/worldcat/ontology/hasWork</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="z">9783037856246</subfield><subfield code="z">3037856246</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Materials science forum ;</subfield><subfield code="v">v. 740-742.</subfield><subfield code="0">http://id.loc.gov/authorities/names/no94007967</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646392</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ProQuest Ebook Central</subfield><subfield code="b">EBLB</subfield><subfield code="n">EBL1873079</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">646392</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">11223037</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-863</subfield></datafield></record></collection> |
genre | Conference papers and proceedings fast |
genre_facet | Conference papers and proceedings |
id | ZDB-4-EBA-ocn861212430 |
illustrated | Not Illustrated |
indexdate | 2024-11-27T13:25:35Z |
institution | BVB |
isbn | 3038260053 9783038260059 |
language | English |
oclc_num | 861212430 |
open_access_boolean | |
owner | MAIN DE-863 DE-BY-FWS |
owner_facet | MAIN DE-863 DE-BY-FWS |
physical | 1 online resource (xxiii, 1149 pages .). |
psigel | ZDB-4-EBA |
publishDate | 2013 |
publishDateSearch | 2013 |
publishDateSort | 2013 |
publisher | Trans Tech Publications, |
record_format | marc |
series | Materials science forum ; |
series2 | Materials science forum ; |
spelling | European Conference on Silicon Carbide and Related Materials (9th : 2012 : St. Petersburg, Russia) Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein. Durnten-Zurich, Switzerland : Trans Tech Publications, [2013] 1 online resource (xxiii, 1149 pages .). text txt rdacontent computer c rdamedia online resource cr rdacarrier Materials science forum ; v. 740-742 Includes bibliographical references and indexes. Print version record. The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from ""Bulk growth"" to ""Device and application"". The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm 2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IG. Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Couches minces de carbure de silicium Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Silicon carbide fast Silicon carbide Electric properties fast Silicon-carbide thin films fast Conference papers and proceedings fast Lebedev, Alexander A., editor. Davydov, Sergey Uu, editor. Ivanov, Pavel A., editor. Levinshtein, Mikhail E., editor. has work: Silicon carbide and related materials 2012 (Text) https://id.oclc.org/worldcat/entity/E39PCH4qdQvPkDHm8KMgBTgh73 https://id.oclc.org/worldcat/ontology/hasWork Print version: 9783037856246 3037856246 Materials science forum ; v. 740-742. http://id.loc.gov/authorities/names/no94007967 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646392 Volltext |
spellingShingle | Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / Materials science forum ; Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Couches minces de carbure de silicium Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Silicon carbide fast Silicon carbide Electric properties fast Silicon-carbide thin films fast |
title | Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / |
title_auth | Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / |
title_exact_search | Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / |
title_full | Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein. |
title_fullStr | Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein. |
title_full_unstemmed | Silicon carbide and related materials 2012 : selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / edited by Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov adn Mikhail E. Levinshtein. |
title_short | Silicon carbide and related materials 2012 : |
title_sort | silicon carbide and related materials 2012 selected peer reviewed materials from the 9th european conference on silicon carbide and related materials september 2 6 2012 st petersburg russian federation |
title_sub | selected, peer reviewed materials from the 9th European Conference on Silicon carbide and Related Materials, September 2-6, 2012, St. Petersburg, Russian Federation / |
topic | Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Couches minces de carbure de silicium Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Silicon carbide fast Silicon carbide Electric properties fast Silicon-carbide thin films fast |
topic_facet | Silicon carbide Congresses. Silicon carbide Electric properties Congresses. Silicon-carbide thin films Congresses. Couches minces de carbure de silicium Congrès. TECHNOLOGY & ENGINEERING Engineering (General) TECHNOLOGY & ENGINEERING Reference. Silicon carbide Silicon carbide Electric properties Silicon-carbide thin films Conference papers and proceedings |
url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=646392 |
work_keys_str_mv | AT europeanconferenceonsiliconcarbideandrelatedmaterialsstpetersburgrussia siliconcarbideandrelatedmaterials2012selectedpeerreviewedmaterialsfromthe9theuropeanconferenceonsiliconcarbideandrelatedmaterialsseptember262012stpetersburgrussianfederation AT lebedevalexandera siliconcarbideandrelatedmaterials2012selectedpeerreviewedmaterialsfromthe9theuropeanconferenceonsiliconcarbideandrelatedmaterialsseptember262012stpetersburgrussianfederation AT davydovsergeyuu siliconcarbideandrelatedmaterials2012selectedpeerreviewedmaterialsfromthe9theuropeanconferenceonsiliconcarbideandrelatedmaterialsseptember262012stpetersburgrussianfederation AT ivanovpavela siliconcarbideandrelatedmaterials2012selectedpeerreviewedmaterialsfromthe9theuropeanconferenceonsiliconcarbideandrelatedmaterialsseptember262012stpetersburgrussianfederation AT levinshteinmikhaile siliconcarbideandrelatedmaterials2012selectedpeerreviewedmaterialsfromthe9theuropeanconferenceonsiliconcarbideandrelatedmaterialsseptember262012stpetersburgrussianfederation |