Compound semiconductor bulk materials and characterizations.: Volume 2 /
Annotation
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore ; London :
World Scientific,
©2012.
|
| Schriftenreihe: | Compound semiconductor bulk materials and characterizations ;
v. 2 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | Annotation |
| Beschreibung: | 1 online resource (xi, 396 pages) : illustrations |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9789812835062 9812835067 |
Internformat
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| 100 | 1 | |a Oda, Osamu. | |
| 245 | 1 | 0 | |a Compound semiconductor bulk materials and characterizations. |n Volume 2 / |c Osamu Oda. |
| 260 | |a Singapore ; |a London : |b World Scientific, |c ©2012. | ||
| 300 | |a 1 online resource (xi, 396 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
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| 490 | 0 | |a Compound semiconductor bulk materials and characterizations ; |v v. 2 | |
| 588 | 0 | |a Print version record. | |
| 504 | |a Includes bibliographical references and index. | ||
| 520 | 8 | |a Annotation |b This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices. | |
| 505 | 0 | |a PREFACE; CONTENTS; PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS; 19. III-V MIXED CRYSTALS; 19.1 INTRODUCTION; 19.2 PHYSICAL PROPERTIES; 19.3 CRYSTAL GROWTH; 19.3.1 In1-x GaxP; 19.3.2 ln1-x GaxAs; 19.3.3 In1-x GaxSb; 19.3.4 InP l-xAsx; 19.3.5 GaAs1-xP x; 19.3.6 A1Ga1-x, Asx; 19.3. 7 InSb1-xBix; 19.3.8 Quaternary III-V Mixed Crystals; 19.4 APPLICATIONS; REFERENCES; 20. NITRIDE AND OTHER III-V COMPOUNDS; 20.1 INTRODUCTION; 20.2 PHYSICAL PROPERTIES; 20.3 CRYSTAL GROWTH; 20.3.1 Boron Nitride; 20.3.2 Aluminum Nitride; (1) Melt growth; (2) Solution growth; (3) Vapor phase growth. | |
| 505 | 8 | |a Physical Vapor Transport (PVT) method- Other vapor phase growth methods; (4) Metal Organic Chemical Vapor Deposition (MOCVD); (5) Hydride Vapor Phase Epitaxy (HVPE); (6) Other growth methods; 20.3.3 Gallium Nitride; (1) Melt growth; (2) Solution growth; -- High Pressure Solution Growth (HP-SG); -Pressure-Controlled Solution Growth (PC-SG) method; -- Flux method; -- Ammonothermal method; -- Other solution growth methods; (3) Vapor phase growth; -- Physical Vapor Transport (PVT) method; -- Reaction of Ga with NH3; -- Reaction of Ga with activated nitrogen; (4) Hydride Vapor Phase Epitaxy (HVPE). | |
| 505 | 8 | |a Sapphire- NdGa03 (NGO); -- GaAs; -SiC; -- Si; -- GaN; -Oxides; (5) Others; 20.3.4 Indium Nitride (InN); 20.3.5 Other III-V Compounds; 20.4 CHARACTERIZATION; 20.4.1 Purity; (1) BN; (2) AIN; (3) GaN; 20.4.2 Defects; (1) Dislocations; -BN; -AIN; -- GaN; (2) Structural defects; -BN; -AIN; -- GaN; (3) Point defects; -BN; -AIN; -- GaN; (i) Vacancies; (ii) Divacancies; (iii) Interstitials; (iv) Antisite defects; (v) Complex defects; (4) Deep levels; -AIN; -- GaN; (i) n-type GaN; (ii) p-type; (iii) Semi-insulating (SI); (iv) Fe and Cr doping; 20.4.3 Electrical Properties; (l)BN; (2) AIN; (3) GaN; (4) InN. | |
| 505 | 8 | |a 20.4.4 Optical Properties(1) BN; (2) AIN; (3) GaN; 20.5 APPLICATIONS; 20.5.1 Substrates for Devices; (1) BN; (2) AlN; (3) GaN; 20.5.2 Light Emitting Diodes (LEDs); (1) Red LEDs; (2) Green LEDs; (3) Blue and violet LEDs; (4) White LEDs; (5) Violet and ultraviolet (UV) LEDs; 20.5.2 Lasers; (1) Blue and violet LDs; (2) Ultraviolet (UV) LDs; (3) Green LDs; 20.5.3 Detectors; 20.5.4 Electronic devices; 20.5.5 Field emitters; REFERENCES; 21. ZnO; 21.1 INTRODUCTION; 21.2 PHYSICAL PROPERTIES; 21.3 CRYSTAL GROWTH; 21.3.1 Melt Growth; 21.3.2 Solution Growth; (1) Flux method; (2) Hydrothermal method. | |
| 505 | 8 | |a 21.3.3 Vapor Phase Growth(I) Vapor reaction; (2) Chemical Vapor Transport (CVT); (3) Chemical Vapor Deposition (CVD); 21.4 CHARACTERIZATION; 21.4.1 Purity; 21.4.2 Defects; (1) Dislocations; (2) Structural defects; (3) Nonstoichiometry; (4) Native defects; 21.4.3 Electrical Properties; 21.4.4 Optical Properties; (1) Edge emission; (2) Impurities; (3) Native defects; (4) Polishing; (5) Polar surfaces; 21.5 APPLICATIONS; 21.5.1 Substrates; 21.5.2 Scintillators; 21.5.3 Light Emitting Diodes (LEDs); 21.5.4 Laser Diodes (LDs); 21.5.5 Photodiodes; REFERENCES; 22. MERCURY COMPOUNDS; 22.1 INTRODUCTION. | |
| 650 | 0 | |a Compound semiconductors |x Materials. | |
| 650 | 6 | |a Composés semi-conducteurs |x Matériaux. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Compound semiconductors |x Materials |2 fast | |
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| contents | PREFACE; CONTENTS; PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS; 19. III-V MIXED CRYSTALS; 19.1 INTRODUCTION; 19.2 PHYSICAL PROPERTIES; 19.3 CRYSTAL GROWTH; 19.3.1 In1-x GaxP; 19.3.2 ln1-x GaxAs; 19.3.3 In1-x GaxSb; 19.3.4 InP l-xAsx; 19.3.5 GaAs1-xP x; 19.3.6 A1Ga1-x, Asx; 19.3. 7 InSb1-xBix; 19.3.8 Quaternary III-V Mixed Crystals; 19.4 APPLICATIONS; REFERENCES; 20. NITRIDE AND OTHER III-V COMPOUNDS; 20.1 INTRODUCTION; 20.2 PHYSICAL PROPERTIES; 20.3 CRYSTAL GROWTH; 20.3.1 Boron Nitride; 20.3.2 Aluminum Nitride; (1) Melt growth; (2) Solution growth; (3) Vapor phase growth. Physical Vapor Transport (PVT) method- Other vapor phase growth methods; (4) Metal Organic Chemical Vapor Deposition (MOCVD); (5) Hydride Vapor Phase Epitaxy (HVPE); (6) Other growth methods; 20.3.3 Gallium Nitride; (1) Melt growth; (2) Solution growth; -- High Pressure Solution Growth (HP-SG); -Pressure-Controlled Solution Growth (PC-SG) method; -- Flux method; -- Ammonothermal method; -- Other solution growth methods; (3) Vapor phase growth; -- Physical Vapor Transport (PVT) method; -- Reaction of Ga with NH3; -- Reaction of Ga with activated nitrogen; (4) Hydride Vapor Phase Epitaxy (HVPE). Sapphire- NdGa03 (NGO); -- GaAs; -SiC; -- Si; -- GaN; -Oxides; (5) Others; 20.3.4 Indium Nitride (InN); 20.3.5 Other III-V Compounds; 20.4 CHARACTERIZATION; 20.4.1 Purity; (1) BN; (2) AIN; (3) GaN; 20.4.2 Defects; (1) Dislocations; -BN; -AIN; -- GaN; (2) Structural defects; -BN; -AIN; -- GaN; (3) Point defects; -BN; -AIN; -- GaN; (i) Vacancies; (ii) Divacancies; (iii) Interstitials; (iv) Antisite defects; (v) Complex defects; (4) Deep levels; -AIN; -- GaN; (i) n-type GaN; (ii) p-type; (iii) Semi-insulating (SI); (iv) Fe and Cr doping; 20.4.3 Electrical Properties; (l)BN; (2) AIN; (3) GaN; (4) InN. 20.4.4 Optical Properties(1) BN; (2) AIN; (3) GaN; 20.5 APPLICATIONS; 20.5.1 Substrates for Devices; (1) BN; (2) AlN; (3) GaN; 20.5.2 Light Emitting Diodes (LEDs); (1) Red LEDs; (2) Green LEDs; (3) Blue and violet LEDs; (4) White LEDs; (5) Violet and ultraviolet (UV) LEDs; 20.5.2 Lasers; (1) Blue and violet LDs; (2) Ultraviolet (UV) LDs; (3) Green LDs; 20.5.3 Detectors; 20.5.4 Electronic devices; 20.5.5 Field emitters; REFERENCES; 21. ZnO; 21.1 INTRODUCTION; 21.2 PHYSICAL PROPERTIES; 21.3 CRYSTAL GROWTH; 21.3.1 Melt Growth; 21.3.2 Solution Growth; (1) Flux method; (2) Hydrothermal method. 21.3.3 Vapor Phase Growth(I) Vapor reaction; (2) Chemical Vapor Transport (CVT); (3) Chemical Vapor Deposition (CVD); 21.4 CHARACTERIZATION; 21.4.1 Purity; 21.4.2 Defects; (1) Dislocations; (2) Structural defects; (3) Nonstoichiometry; (4) Native defects; 21.4.3 Electrical Properties; 21.4.4 Optical Properties; (1) Edge emission; (2) Impurities; (3) Native defects; (4) Polishing; (5) Polar surfaces; 21.5 APPLICATIONS; 21.5.1 Substrates; 21.5.2 Scintillators; 21.5.3 Light Emitting Diodes (LEDs); 21.5.4 Laser Diodes (LDs); 21.5.5 Photodiodes; REFERENCES; 22. MERCURY COMPOUNDS; 22.1 INTRODUCTION. |
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code="a">Annotation</subfield><subfield code="b">This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">PREFACE; CONTENTS; PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS; 19. III-V MIXED CRYSTALS; 19.1 INTRODUCTION; 19.2 PHYSICAL PROPERTIES; 19.3 CRYSTAL GROWTH; 19.3.1 In1-x GaxP; 19.3.2 ln1-x GaxAs; 19.3.3 In1-x GaxSb; 19.3.4 InP l-xAsx; 19.3.5 GaAs1-xP x; 19.3.6 A1Ga1-x, Asx; 19.3. 7 InSb1-xBix; 19.3.8 Quaternary III-V Mixed Crystals; 19.4 APPLICATIONS; REFERENCES; 20. NITRIDE AND OTHER III-V COMPOUNDS; 20.1 INTRODUCTION; 20.2 PHYSICAL PROPERTIES; 20.3 CRYSTAL GROWTH; 20.3.1 Boron Nitride; 20.3.2 Aluminum Nitride; (1) Melt growth; (2) Solution growth; (3) Vapor phase growth.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Physical Vapor Transport (PVT) method- Other vapor phase growth methods; (4) Metal Organic Chemical Vapor Deposition (MOCVD); (5) Hydride Vapor Phase Epitaxy (HVPE); (6) Other growth methods; 20.3.3 Gallium Nitride; (1) Melt growth; (2) Solution growth; -- High Pressure Solution Growth (HP-SG); -Pressure-Controlled Solution Growth (PC-SG) method; -- Flux method; -- Ammonothermal method; -- Other solution growth methods; (3) Vapor phase growth; -- Physical Vapor Transport (PVT) method; -- Reaction of Ga with NH3; -- Reaction of Ga with activated nitrogen; (4) Hydride Vapor Phase Epitaxy (HVPE).</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Sapphire- NdGa03 (NGO); -- GaAs; -SiC; -- Si; -- GaN; -Oxides; (5) Others; 20.3.4 Indium Nitride (InN); 20.3.5 Other III-V Compounds; 20.4 CHARACTERIZATION; 20.4.1 Purity; (1) BN; (2) AIN; (3) GaN; 20.4.2 Defects; (1) Dislocations; -BN; -AIN; -- GaN; (2) Structural defects; -BN; -AIN; -- GaN; (3) Point defects; -BN; -AIN; -- GaN; (i) Vacancies; (ii) Divacancies; (iii) Interstitials; (iv) Antisite defects; (v) Complex defects; (4) Deep levels; -AIN; -- GaN; (i) n-type GaN; (ii) p-type; (iii) Semi-insulating (SI); (iv) Fe and Cr doping; 20.4.3 Electrical Properties; (l)BN; (2) AIN; (3) GaN; (4) InN.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">20.4.4 Optical Properties(1) BN; (2) AIN; (3) GaN; 20.5 APPLICATIONS; 20.5.1 Substrates for Devices; (1) BN; (2) AlN; (3) GaN; 20.5.2 Light Emitting Diodes (LEDs); (1) Red LEDs; (2) Green LEDs; (3) Blue and violet LEDs; (4) White LEDs; (5) Violet and ultraviolet (UV) LEDs; 20.5.2 Lasers; (1) Blue and violet LDs; (2) Ultraviolet (UV) LDs; (3) Green LDs; 20.5.3 Detectors; 20.5.4 Electronic devices; 20.5.5 Field emitters; REFERENCES; 21. ZnO; 21.1 INTRODUCTION; 21.2 PHYSICAL PROPERTIES; 21.3 CRYSTAL GROWTH; 21.3.1 Melt Growth; 21.3.2 Solution Growth; (1) Flux method; (2) Hydrothermal method.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">21.3.3 Vapor Phase Growth(I) Vapor reaction; (2) Chemical Vapor Transport (CVT); (3) Chemical Vapor Deposition (CVD); 21.4 CHARACTERIZATION; 21.4.1 Purity; 21.4.2 Defects; (1) Dislocations; (2) Structural defects; (3) Nonstoichiometry; (4) Native defects; 21.4.3 Electrical Properties; 21.4.4 Optical Properties; (1) Edge emission; (2) Impurities; (3) Native defects; (4) Polishing; (5) Polar surfaces; 21.5 APPLICATIONS; 21.5.1 Substrates; 21.5.2 Scintillators; 21.5.3 Light Emitting Diodes (LEDs); 21.5.4 Laser Diodes (LDs); 21.5.5 Photodiodes; REFERENCES; 22. 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| id | ZDB-4-EBA-ocn847527641 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:25:23Z |
| institution | BVB |
| isbn | 9789812835062 9812835067 |
| language | English |
| oclc_num | 847527641 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xi, 396 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | World Scientific, |
| record_format | marc |
| series2 | Compound semiconductor bulk materials and characterizations ; |
| spelling | Oda, Osamu. Compound semiconductor bulk materials and characterizations. Volume 2 / Osamu Oda. Singapore ; London : World Scientific, ©2012. 1 online resource (xi, 396 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Compound semiconductor bulk materials and characterizations ; v. 2 Print version record. Includes bibliographical references and index. Annotation This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices. PREFACE; CONTENTS; PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS; 19. III-V MIXED CRYSTALS; 19.1 INTRODUCTION; 19.2 PHYSICAL PROPERTIES; 19.3 CRYSTAL GROWTH; 19.3.1 In1-x GaxP; 19.3.2 ln1-x GaxAs; 19.3.3 In1-x GaxSb; 19.3.4 InP l-xAsx; 19.3.5 GaAs1-xP x; 19.3.6 A1Ga1-x, Asx; 19.3. 7 InSb1-xBix; 19.3.8 Quaternary III-V Mixed Crystals; 19.4 APPLICATIONS; REFERENCES; 20. NITRIDE AND OTHER III-V COMPOUNDS; 20.1 INTRODUCTION; 20.2 PHYSICAL PROPERTIES; 20.3 CRYSTAL GROWTH; 20.3.1 Boron Nitride; 20.3.2 Aluminum Nitride; (1) Melt growth; (2) Solution growth; (3) Vapor phase growth. Physical Vapor Transport (PVT) method- Other vapor phase growth methods; (4) Metal Organic Chemical Vapor Deposition (MOCVD); (5) Hydride Vapor Phase Epitaxy (HVPE); (6) Other growth methods; 20.3.3 Gallium Nitride; (1) Melt growth; (2) Solution growth; -- High Pressure Solution Growth (HP-SG); -Pressure-Controlled Solution Growth (PC-SG) method; -- Flux method; -- Ammonothermal method; -- Other solution growth methods; (3) Vapor phase growth; -- Physical Vapor Transport (PVT) method; -- Reaction of Ga with NH3; -- Reaction of Ga with activated nitrogen; (4) Hydride Vapor Phase Epitaxy (HVPE). Sapphire- NdGa03 (NGO); -- GaAs; -SiC; -- Si; -- GaN; -Oxides; (5) Others; 20.3.4 Indium Nitride (InN); 20.3.5 Other III-V Compounds; 20.4 CHARACTERIZATION; 20.4.1 Purity; (1) BN; (2) AIN; (3) GaN; 20.4.2 Defects; (1) Dislocations; -BN; -AIN; -- GaN; (2) Structural defects; -BN; -AIN; -- GaN; (3) Point defects; -BN; -AIN; -- GaN; (i) Vacancies; (ii) Divacancies; (iii) Interstitials; (iv) Antisite defects; (v) Complex defects; (4) Deep levels; -AIN; -- GaN; (i) n-type GaN; (ii) p-type; (iii) Semi-insulating (SI); (iv) Fe and Cr doping; 20.4.3 Electrical Properties; (l)BN; (2) AIN; (3) GaN; (4) InN. 20.4.4 Optical Properties(1) BN; (2) AIN; (3) GaN; 20.5 APPLICATIONS; 20.5.1 Substrates for Devices; (1) BN; (2) AlN; (3) GaN; 20.5.2 Light Emitting Diodes (LEDs); (1) Red LEDs; (2) Green LEDs; (3) Blue and violet LEDs; (4) White LEDs; (5) Violet and ultraviolet (UV) LEDs; 20.5.2 Lasers; (1) Blue and violet LDs; (2) Ultraviolet (UV) LDs; (3) Green LDs; 20.5.3 Detectors; 20.5.4 Electronic devices; 20.5.5 Field emitters; REFERENCES; 21. ZnO; 21.1 INTRODUCTION; 21.2 PHYSICAL PROPERTIES; 21.3 CRYSTAL GROWTH; 21.3.1 Melt Growth; 21.3.2 Solution Growth; (1) Flux method; (2) Hydrothermal method. 21.3.3 Vapor Phase Growth(I) Vapor reaction; (2) Chemical Vapor Transport (CVT); (3) Chemical Vapor Deposition (CVD); 21.4 CHARACTERIZATION; 21.4.1 Purity; 21.4.2 Defects; (1) Dislocations; (2) Structural defects; (3) Nonstoichiometry; (4) Native defects; 21.4.3 Electrical Properties; 21.4.4 Optical Properties; (1) Edge emission; (2) Impurities; (3) Native defects; (4) Polishing; (5) Polar surfaces; 21.5 APPLICATIONS; 21.5.1 Substrates; 21.5.2 Scintillators; 21.5.3 Light Emitting Diodes (LEDs); 21.5.4 Laser Diodes (LDs); 21.5.5 Photodiodes; REFERENCES; 22. MERCURY COMPOUNDS; 22.1 INTRODUCTION. Compound semiconductors Materials. Composés semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh Compound semiconductors Materials fast has work: Compound semiconductor bulk materials and characterizations 2 (Text) https://id.oclc.org/worldcat/entity/E39PCXJYTkc8VccXx8hm7MW66q https://id.oclc.org/worldcat/ontology/hasWork Print version: Oda, Osamu. Compound semiconductor bulk materials and characterizations. Volume 2. Singapore ; London : World Scientific, ©2012 9789812835055 (OCoLC)793214236 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=592608 Volltext |
| spellingShingle | Oda, Osamu Compound semiconductor bulk materials and characterizations. PREFACE; CONTENTS; PART 4 OTHER COMPOUND SEMICONDUCTOR MATERIALS; 19. III-V MIXED CRYSTALS; 19.1 INTRODUCTION; 19.2 PHYSICAL PROPERTIES; 19.3 CRYSTAL GROWTH; 19.3.1 In1-x GaxP; 19.3.2 ln1-x GaxAs; 19.3.3 In1-x GaxSb; 19.3.4 InP l-xAsx; 19.3.5 GaAs1-xP x; 19.3.6 A1Ga1-x, Asx; 19.3. 7 InSb1-xBix; 19.3.8 Quaternary III-V Mixed Crystals; 19.4 APPLICATIONS; REFERENCES; 20. NITRIDE AND OTHER III-V COMPOUNDS; 20.1 INTRODUCTION; 20.2 PHYSICAL PROPERTIES; 20.3 CRYSTAL GROWTH; 20.3.1 Boron Nitride; 20.3.2 Aluminum Nitride; (1) Melt growth; (2) Solution growth; (3) Vapor phase growth. Physical Vapor Transport (PVT) method- Other vapor phase growth methods; (4) Metal Organic Chemical Vapor Deposition (MOCVD); (5) Hydride Vapor Phase Epitaxy (HVPE); (6) Other growth methods; 20.3.3 Gallium Nitride; (1) Melt growth; (2) Solution growth; -- High Pressure Solution Growth (HP-SG); -Pressure-Controlled Solution Growth (PC-SG) method; -- Flux method; -- Ammonothermal method; -- Other solution growth methods; (3) Vapor phase growth; -- Physical Vapor Transport (PVT) method; -- Reaction of Ga with NH3; -- Reaction of Ga with activated nitrogen; (4) Hydride Vapor Phase Epitaxy (HVPE). Sapphire- NdGa03 (NGO); -- GaAs; -SiC; -- Si; -- GaN; -Oxides; (5) Others; 20.3.4 Indium Nitride (InN); 20.3.5 Other III-V Compounds; 20.4 CHARACTERIZATION; 20.4.1 Purity; (1) BN; (2) AIN; (3) GaN; 20.4.2 Defects; (1) Dislocations; -BN; -AIN; -- GaN; (2) Structural defects; -BN; -AIN; -- GaN; (3) Point defects; -BN; -AIN; -- GaN; (i) Vacancies; (ii) Divacancies; (iii) Interstitials; (iv) Antisite defects; (v) Complex defects; (4) Deep levels; -AIN; -- GaN; (i) n-type GaN; (ii) p-type; (iii) Semi-insulating (SI); (iv) Fe and Cr doping; 20.4.3 Electrical Properties; (l)BN; (2) AIN; (3) GaN; (4) InN. 20.4.4 Optical Properties(1) BN; (2) AIN; (3) GaN; 20.5 APPLICATIONS; 20.5.1 Substrates for Devices; (1) BN; (2) AlN; (3) GaN; 20.5.2 Light Emitting Diodes (LEDs); (1) Red LEDs; (2) Green LEDs; (3) Blue and violet LEDs; (4) White LEDs; (5) Violet and ultraviolet (UV) LEDs; 20.5.2 Lasers; (1) Blue and violet LDs; (2) Ultraviolet (UV) LDs; (3) Green LDs; 20.5.3 Detectors; 20.5.4 Electronic devices; 20.5.5 Field emitters; REFERENCES; 21. ZnO; 21.1 INTRODUCTION; 21.2 PHYSICAL PROPERTIES; 21.3 CRYSTAL GROWTH; 21.3.1 Melt Growth; 21.3.2 Solution Growth; (1) Flux method; (2) Hydrothermal method. 21.3.3 Vapor Phase Growth(I) Vapor reaction; (2) Chemical Vapor Transport (CVT); (3) Chemical Vapor Deposition (CVD); 21.4 CHARACTERIZATION; 21.4.1 Purity; 21.4.2 Defects; (1) Dislocations; (2) Structural defects; (3) Nonstoichiometry; (4) Native defects; 21.4.3 Electrical Properties; 21.4.4 Optical Properties; (1) Edge emission; (2) Impurities; (3) Native defects; (4) Polishing; (5) Polar surfaces; 21.5 APPLICATIONS; 21.5.1 Substrates; 21.5.2 Scintillators; 21.5.3 Light Emitting Diodes (LEDs); 21.5.4 Laser Diodes (LDs); 21.5.5 Photodiodes; REFERENCES; 22. MERCURY COMPOUNDS; 22.1 INTRODUCTION. Compound semiconductors Materials. Composés semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh Compound semiconductors Materials fast |
| title | Compound semiconductor bulk materials and characterizations. |
| title_auth | Compound semiconductor bulk materials and characterizations. |
| title_exact_search | Compound semiconductor bulk materials and characterizations. |
| title_full | Compound semiconductor bulk materials and characterizations. Volume 2 / Osamu Oda. |
| title_fullStr | Compound semiconductor bulk materials and characterizations. Volume 2 / Osamu Oda. |
| title_full_unstemmed | Compound semiconductor bulk materials and characterizations. Volume 2 / Osamu Oda. |
| title_short | Compound semiconductor bulk materials and characterizations. |
| title_sort | compound semiconductor bulk materials and characterizations |
| topic | Compound semiconductors Materials. Composés semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh Compound semiconductors Materials fast |
| topic_facet | Compound semiconductors Materials. Composés semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Semiconductors. TECHNOLOGY & ENGINEERING Electronics Solid State. Compound semiconductors Materials |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=592608 |
| work_keys_str_mv | AT odaosamu compoundsemiconductorbulkmaterialsandcharacterizationsvolume2 |