Advances in semiconductor lasers and applications to optoelectronics /:
This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is...
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| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore ; River Edge, NJ :
World Scientific,
©2000.
|
| Schriftenreihe: | Selected topics in electronics and systems ;
v. 16. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers. As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport. |
| Beschreibung: | 1 online resource (xiii, 431 pages) : illustrations |
| Bibliographie: | Includes bibliographical references. |
| ISBN: | 9789812793614 9812793615 |
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| contents | Tunnel injection lasers / Quantum well intersubband lasers / Advances in measurements of physical parameters of semiconductor lasers / Lateral injection lasers / Extended wavelength (1.0 to 1.3 um)InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers / dr D.G. Deppe and D.L. Huffaker -- GaN-based laser diodes / Quantum-dot semiconductor lasers / Device characteristics of low-threshold quantum-dot lasers / Nitride lasers: optical gain and devise implications / Advanced concepts in intersubband unipolar lasers / Optoelectronic properties of strained wurtzite GaN quantum-well lasers / Carrier capture in semiconductor quantum well lasers: a quantum transport analysis / Quantum state engieering based on electromagnetic analogies and numerical methods for semiconductor intersubband lasers / Advanced semiconductor lasers: phonon engineering and phonon interactions / |
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| indexdate | 2024-10-25T16:21:19Z |
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| series | Selected topics in electronics and systems ; |
| series2 | Selected topics in electronics and systems ; |
| spelling | Advances in semiconductor lasers and applications to optoelectronics / editors Mitra Dutta, Michael A. Stroscio. Singapore ; River Edge, NJ : World Scientific, ©2000. 1 online resource (xiii, 431 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Selected topics in electronics and systems ; v. 16 Includes bibliographical references. Tunnel injection lasers / P. Bhattacharya -- Quantum well intersubband lasers / J.P. Sun [and others] -- Advances in measurements of physical parameters of semiconductor lasers / G.E. Shtengel [and others] -- Lateral injection lasers / E.H. Sargent and J.M. Xu -- Extended wavelength (1.0 to 1.3 um)InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers / dr D.G. Deppe and D.L. Huffaker -- GaN-based laser diodes / M. Razeghi -- Quantum-dot semiconductor lasers / P. Bhattacharya -- Device characteristics of low-threshold quantum-dot lasers / A.E. Zhukov, V.M. Ustinov, and Z.I. Alferov -- Nitride lasers: optical gain and devise implications / A.V. Nurmikko and Y.K. Song -- Advanced concepts in intersubband unipolar lasers / J.P. Leburton, F.H. Julien, and Y. Lyanda-Geller -- Optoelectronic properties of strained wurtzite GaN quantum-well lasers / J. Wang [and others] -- Carrier capture in semiconductor quantum well lasers: a quantum transport analysis / L.F. Register -- Quantum state engieering based on electromagnetic analogies and numerical methods for semiconductor intersubband lasers / E. Anemogiannis, E.N. Glytsis, and T.K. Gaylord -- Advanced semiconductor lasers: phonon engineering and phonon interactions / M. Dutta and M.A. Stroscio. Print version record. This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel injection laser, quantum well intersubband lasers, and quantum dot lasers. The full exploitation of dimensional confinement leads to the exciting new capability of scattering time engineering in novel semiconductor lasers. As a result of continuing advances in techniques for growing quantum heterostructures, recent developments are likely to be followed in coming years by many more advances in semiconductor lasers and optoelectronics. As our understanding of these devices and the ability to fabricate them grow, so does our need for more sophisticated theories and simulation methods bridging the gap between quantum and classical transport. Semiconductor lasers. http://id.loc.gov/authorities/subjects/sh85119896 Optoelectronic devices. http://id.loc.gov/authorities/subjects/sh85095200 Lasers, Semiconductor https://id.nlm.nih.gov/mesh/D054023 Lasers à semi-conducteurs. Dispositifs optoélectroniques. TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh Optoelectronic devices fast Semiconductor lasers fast Aufsatzsammlung gnd Halbleiterlaser gnd http://d-nb.info/gnd/4139556-6 Lasers à semiconducteurs. ram Dispositifs optoélectroniques. ram Dutta, Mitra. Stroscio, Michael A., 1949- https://id.oclc.org/worldcat/entity/E39PCjrhcJGMV3pQT93y6xfDv3 http://id.loc.gov/authorities/names/n98078769 has work: Advances in semiconductor lasers and applications to optoelectronics (Text) https://id.oclc.org/worldcat/entity/E39PCGdCpwkYFgqVbmpMPrwgXb https://id.oclc.org/worldcat/ontology/hasWork Print version: Advances in semiconductor lasers and applications to optoelectronics. Singapore ; River Edge, NJ : World Scientific, ©2000 9810242573 (DLC) 2005297489 (OCoLC)45577332 Selected topics in electronics and systems ; v. 16. http://id.loc.gov/authorities/names/no95054495 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=519183 Volltext CBO01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=519183 Volltext |
| spellingShingle | Advances in semiconductor lasers and applications to optoelectronics / Selected topics in electronics and systems ; Tunnel injection lasers / Quantum well intersubband lasers / Advances in measurements of physical parameters of semiconductor lasers / Lateral injection lasers / Extended wavelength (1.0 to 1.3 um)InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers / dr D.G. Deppe and D.L. Huffaker -- GaN-based laser diodes / Quantum-dot semiconductor lasers / Device characteristics of low-threshold quantum-dot lasers / Nitride lasers: optical gain and devise implications / Advanced concepts in intersubband unipolar lasers / Optoelectronic properties of strained wurtzite GaN quantum-well lasers / Carrier capture in semiconductor quantum well lasers: a quantum transport analysis / Quantum state engieering based on electromagnetic analogies and numerical methods for semiconductor intersubband lasers / Advanced semiconductor lasers: phonon engineering and phonon interactions / Semiconductor lasers. http://id.loc.gov/authorities/subjects/sh85119896 Optoelectronic devices. http://id.loc.gov/authorities/subjects/sh85095200 Lasers, Semiconductor https://id.nlm.nih.gov/mesh/D054023 Lasers à semi-conducteurs. Dispositifs optoélectroniques. TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh Optoelectronic devices fast Semiconductor lasers fast Aufsatzsammlung gnd Halbleiterlaser gnd http://d-nb.info/gnd/4139556-6 Lasers à semiconducteurs. ram Dispositifs optoélectroniques. ram |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85119896 http://id.loc.gov/authorities/subjects/sh85095200 https://id.nlm.nih.gov/mesh/D054023 http://d-nb.info/gnd/4139556-6 |
| title | Advances in semiconductor lasers and applications to optoelectronics / |
| title_alt | Tunnel injection lasers / Quantum well intersubband lasers / Advances in measurements of physical parameters of semiconductor lasers / Lateral injection lasers / Extended wavelength (1.0 to 1.3 um)InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers / dr D.G. Deppe and D.L. Huffaker -- GaN-based laser diodes / Quantum-dot semiconductor lasers / Device characteristics of low-threshold quantum-dot lasers / Nitride lasers: optical gain and devise implications / Advanced concepts in intersubband unipolar lasers / Optoelectronic properties of strained wurtzite GaN quantum-well lasers / Carrier capture in semiconductor quantum well lasers: a quantum transport analysis / Quantum state engieering based on electromagnetic analogies and numerical methods for semiconductor intersubband lasers / Advanced semiconductor lasers: phonon engineering and phonon interactions / |
| title_auth | Advances in semiconductor lasers and applications to optoelectronics / |
| title_exact_search | Advances in semiconductor lasers and applications to optoelectronics / |
| title_full | Advances in semiconductor lasers and applications to optoelectronics / editors Mitra Dutta, Michael A. Stroscio. |
| title_fullStr | Advances in semiconductor lasers and applications to optoelectronics / editors Mitra Dutta, Michael A. Stroscio. |
| title_full_unstemmed | Advances in semiconductor lasers and applications to optoelectronics / editors Mitra Dutta, Michael A. Stroscio. |
| title_short | Advances in semiconductor lasers and applications to optoelectronics / |
| title_sort | advances in semiconductor lasers and applications to optoelectronics |
| topic | Semiconductor lasers. http://id.loc.gov/authorities/subjects/sh85119896 Optoelectronic devices. http://id.loc.gov/authorities/subjects/sh85095200 Lasers, Semiconductor https://id.nlm.nih.gov/mesh/D054023 Lasers à semi-conducteurs. Dispositifs optoélectroniques. TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh Optoelectronic devices fast Semiconductor lasers fast Aufsatzsammlung gnd Halbleiterlaser gnd http://d-nb.info/gnd/4139556-6 Lasers à semiconducteurs. ram Dispositifs optoélectroniques. ram |
| topic_facet | Semiconductor lasers. Optoelectronic devices. Lasers, Semiconductor Lasers à semi-conducteurs. Dispositifs optoélectroniques. TECHNOLOGY & ENGINEERING Electronics Semiconductors. TECHNOLOGY & ENGINEERING Electronics Solid State. Optoelectronic devices Semiconductor lasers Aufsatzsammlung Halbleiterlaser Lasers à semiconducteurs. |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=519183 |
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