Gettering and defect engineering in semiconductor technology XIII :: GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 /
This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, subm...
Gespeichert in:
| Körperschaft: | |
|---|---|
| Weitere Verfasser: | , |
| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Stafa-Zuerich, Switzerland :
Trans Tech Publications,
©2010.
|
| Schriftenreihe: | Diffusion and defect data. Solid state phenomena ;
v. 156/158. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, submitted by internationally recognized experts in the field, review the state-of-the-art and likely future trends in their respective research field. Upon comparing this volume with previous volumes, it is clearly seen that defect engineering in photovoltaics is becoming a topic of ever-increasing inte. |
| Beschreibung: | 1 online resource (xiv, 592 pages) : illustrations |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9783038133698 3038133698 |
| ISSN: | 1012-0394 ; |
Internformat
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | ZDB-4-EBA-ocn828869002 | ||
| 003 | OCoLC | ||
| 005 | 20241004212047.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 130304s2010 sz a ob 101 0 eng d | ||
| 040 | |a N$T |b eng |e pn |c N$T |d CUS |d OCLCF |d OCLCO |d YDXCP |d E7B |d EBLCP |d DEBSZ |d OCLCO |d OCL |d OCLCO |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d AGLDB |d OCLCQ |d VTS |d STF |d M8D |d OCLCQ |d VLY |d AJS |d OCLCQ |d OCLCO |d OCLCQ |d OCLCO |d OCLCL |d OCLCQ | ||
| 019 | |a 823870785 |a 872665498 |a 897070629 |a 1162418832 |a 1241931289 |a 1300531323 | ||
| 020 | |a 9783038133698 |q (electronic bk.) | ||
| 020 | |a 3038133698 |q (electronic bk.) | ||
| 020 | |z 9771012039401 | ||
| 020 | |z 9783908451747 | ||
| 020 | |z 3908451744 | ||
| 035 | |a (OCoLC)828869002 |z (OCoLC)823870785 |z (OCoLC)872665498 |z (OCoLC)897070629 |z (OCoLC)1162418832 |z (OCoLC)1241931289 |z (OCoLC)1300531323 | ||
| 050 | 4 | |a QD543 |b .S64x v. 156/158eb | |
| 072 | 7 | |a TEC |x 009000 |2 bisacsh | |
| 072 | 7 | |a TEC |x 035000 |2 bisacsh | |
| 082 | 7 | |a 620.38152 |2 22 | |
| 049 | |a MAIN | ||
| 111 | 2 | |a International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" |n (13th : |d 2009 : |c Dölnsee-Schorfheide, Germany) | |
| 245 | 1 | 0 | |a Gettering and defect engineering in semiconductor technology XIII : |b GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / |c edited by M. Kittler and H. Richter. |
| 246 | 3 | 0 | |a GADEST 2009 |
| 260 | |a Stafa-Zuerich, Switzerland : |b Trans Tech Publications, |c ©2010. | ||
| 300 | |a 1 online resource (xiv, 592 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Solid state phenomena, |x 1012-0394 ; |v v. 156-158 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon. | |
| 505 | 8 | |a Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing. | |
| 505 | 8 | |a Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies. | |
| 505 | 8 | |a Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms. | |
| 505 | 8 | |a Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects. | |
| 520 | |a This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, submitted by internationally recognized experts in the field, review the state-of-the-art and likely future trends in their respective research field. Upon comparing this volume with previous volumes, it is clearly seen that defect engineering in photovoltaics is becoming a topic of ever-increasing inte. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Solid state electronics |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |v Congrès. | |
| 650 | 6 | |a Électronique de l'état solide |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Engineering (General) |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Reference. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Solid state electronics |2 fast | |
| 655 | 7 | |a Conference papers and proceedings |2 fast | |
| 700 | 1 | |a Kittler, Martin. |0 http://id.loc.gov/authorities/names/nb2008020812 | |
| 700 | 1 | |a Richter, H., |d 1940- |1 https://id.oclc.org/worldcat/entity/E39PCjx69vDHtVYbFMHygv7CQq |0 http://id.loc.gov/authorities/names/nb99081098 | |
| 776 | 0 | 8 | |i Print version: |a International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (13th : 2009 : Dölnsee-Schorfheide, Germany). |t Gettering and defect engineering in semiconductor technology XIII. |d Stafa-Zuerich, Switzerland : Trans Tech Publications, ©2010 |z 9783908451747 |w (OCoLC)505417272 |
| 830 | 0 | |a Diffusion and defect data. |n Pt. B, |p Solid state phenomena ; |v v. 156/158. |0 http://id.loc.gov/authorities/names/no00104273 | |
| 856 | 4 | 0 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=503559 |3 Volltext |
| 938 | |a ProQuest Ebook Central |b EBLB |n EBL1869265 | ||
| 938 | |a ebrary |b EBRY |n ebr10828923 | ||
| 938 | |a EBSCOhost |b EBSC |n 503559 | ||
| 938 | |a YBP Library Services |b YANK |n 9933658 | ||
| 994 | |a 92 |b GEBAY | ||
| 912 | |a ZDB-4-EBA | ||
| 049 | |a DE-863 | ||
Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocn828869002 |
|---|---|
| _version_ | 1816882223763161088 |
| adam_text | |
| any_adam_object | |
| author2 | Kittler, Martin Richter, H., 1940- |
| author2_role | |
| author2_variant | m k mk h r hr |
| author_GND | http://id.loc.gov/authorities/names/nb2008020812 http://id.loc.gov/authorities/names/nb99081098 |
| author_corporate | International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" Dölnsee-Schorfheide, Germany |
| author_corporate_role | |
| author_facet | Kittler, Martin Richter, H., 1940- International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" Dölnsee-Schorfheide, Germany |
| author_sort | International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" Dölnsee-Schorfheide, Germany |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | Q - Science |
| callnumber-label | QD543 |
| callnumber-raw | QD543 .S64x v. 156/158eb |
| callnumber-search | QD543 .S64x v. 156/158eb |
| callnumber-sort | QD 3543 S64 X V 3156 3158EB |
| callnumber-subject | QD - Chemistry |
| collection | ZDB-4-EBA |
| contents | Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon. Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing. Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies. Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms. Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects. |
| ctrlnum | (OCoLC)828869002 |
| dewey-full | 620.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
| dewey-raw | 620.38152 |
| dewey-search | 620.38152 |
| dewey-sort | 3620.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| format | Electronic Conference Proceeding eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>06946cam a2200697 a 4500</leader><controlfield tag="001">ZDB-4-EBA-ocn828869002</controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20241004212047.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr cnu---unuuu</controlfield><controlfield tag="008">130304s2010 sz a ob 101 0 eng d</controlfield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">N$T</subfield><subfield code="b">eng</subfield><subfield code="e">pn</subfield><subfield code="c">N$T</subfield><subfield code="d">CUS</subfield><subfield code="d">OCLCF</subfield><subfield code="d">OCLCO</subfield><subfield code="d">YDXCP</subfield><subfield code="d">E7B</subfield><subfield code="d">EBLCP</subfield><subfield code="d">DEBSZ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCL</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">AGLDB</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">VTS</subfield><subfield code="d">STF</subfield><subfield code="d">M8D</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">VLY</subfield><subfield code="d">AJS</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCL</subfield><subfield code="d">OCLCQ</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">823870785</subfield><subfield code="a">872665498</subfield><subfield code="a">897070629</subfield><subfield code="a">1162418832</subfield><subfield code="a">1241931289</subfield><subfield code="a">1300531323</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783038133698</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3038133698</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9771012039401</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9783908451747</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">3908451744</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)828869002</subfield><subfield code="z">(OCoLC)823870785</subfield><subfield code="z">(OCoLC)872665498</subfield><subfield code="z">(OCoLC)897070629</subfield><subfield code="z">(OCoLC)1162418832</subfield><subfield code="z">(OCoLC)1241931289</subfield><subfield code="z">(OCoLC)1300531323</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">QD543</subfield><subfield code="b">.S64x v. 156/158eb</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">009000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">035000</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">620.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology"</subfield><subfield code="n">(13th :</subfield><subfield code="d">2009 :</subfield><subfield code="c">Dölnsee-Schorfheide, Germany)</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Gettering and defect engineering in semiconductor technology XIII :</subfield><subfield code="b">GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 /</subfield><subfield code="c">edited by M. Kittler and H. Richter.</subfield></datafield><datafield tag="246" ind1="3" ind2="0"><subfield code="a">GADEST 2009</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="a">Stafa-Zuerich, Switzerland :</subfield><subfield code="b">Trans Tech Publications,</subfield><subfield code="c">©2010.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (xiv, 592 pages) :</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Solid state phenomena,</subfield><subfield code="x">1012-0394 ;</subfield><subfield code="v">v. 156-158</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, submitted by internationally recognized experts in the field, review the state-of-the-art and likely future trends in their respective research field. Upon comparing this volume with previous volumes, it is clearly seen that defect engineering in photovoltaics is becoming a topic of ever-increasing inte.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">English.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Semiconductors</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Solid state electronics</subfield><subfield code="v">Congresses.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Semi-conducteurs</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Électronique de l'état solide</subfield><subfield code="v">Congrès.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Engineering (General)</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Reference.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Solid state electronics</subfield><subfield code="2">fast</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="a">Conference papers and proceedings</subfield><subfield code="2">fast</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kittler, Martin.</subfield><subfield code="0">http://id.loc.gov/authorities/names/nb2008020812</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Richter, H.,</subfield><subfield code="d">1940-</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCjx69vDHtVYbFMHygv7CQq</subfield><subfield code="0">http://id.loc.gov/authorities/names/nb99081098</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="a">International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (13th : 2009 : Dölnsee-Schorfheide, Germany).</subfield><subfield code="t">Gettering and defect engineering in semiconductor technology XIII.</subfield><subfield code="d">Stafa-Zuerich, Switzerland : Trans Tech Publications, ©2010</subfield><subfield code="z">9783908451747</subfield><subfield code="w">(OCoLC)505417272</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Diffusion and defect data.</subfield><subfield code="n">Pt. B,</subfield><subfield code="p">Solid state phenomena ;</subfield><subfield code="v">v. 156/158.</subfield><subfield code="0">http://id.loc.gov/authorities/names/no00104273</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=503559</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ProQuest Ebook Central</subfield><subfield code="b">EBLB</subfield><subfield code="n">EBL1869265</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ebrary</subfield><subfield code="b">EBRY</subfield><subfield code="n">ebr10828923</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">503559</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">9933658</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-863</subfield></datafield></record></collection> |
| genre | Conference papers and proceedings fast |
| genre_facet | Conference papers and proceedings |
| id | ZDB-4-EBA-ocn828869002 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:25:12Z |
| institution | BVB |
| isbn | 9783038133698 3038133698 |
| issn | 1012-0394 ; |
| language | English |
| oclc_num | 828869002 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xiv, 592 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Trans Tech Publications, |
| record_format | marc |
| series | Diffusion and defect data. Solid state phenomena ; |
| series2 | Solid state phenomena, |
| spelling | International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (13th : 2009 : Dölnsee-Schorfheide, Germany) Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / edited by M. Kittler and H. Richter. GADEST 2009 Stafa-Zuerich, Switzerland : Trans Tech Publications, ©2010. 1 online resource (xiv, 592 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Solid state phenomena, 1012-0394 ; v. 156-158 Includes bibliographical references and index. Print version record. Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon. Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing. Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies. Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms. Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects. This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices. The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, submitted by internationally recognized experts in the field, review the state-of-the-art and likely future trends in their respective research field. Upon comparing this volume with previous volumes, it is clearly seen that defect engineering in photovoltaics is becoming a topic of ever-increasing inte. English. Semiconductors Congresses. Solid state electronics Congresses. Semi-conducteurs Congrès. Électronique de l'état solide Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Semiconductors fast Solid state electronics fast Conference papers and proceedings fast Kittler, Martin. http://id.loc.gov/authorities/names/nb2008020812 Richter, H., 1940- https://id.oclc.org/worldcat/entity/E39PCjx69vDHtVYbFMHygv7CQq http://id.loc.gov/authorities/names/nb99081098 Print version: International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology" (13th : 2009 : Dölnsee-Schorfheide, Germany). Gettering and defect engineering in semiconductor technology XIII. Stafa-Zuerich, Switzerland : Trans Tech Publications, ©2010 9783908451747 (OCoLC)505417272 Diffusion and defect data. Pt. B, Solid state phenomena ; v. 156/158. http://id.loc.gov/authorities/names/no00104273 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=503559 Volltext |
| spellingShingle | Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / Diffusion and defect data. Solid state phenomena ; Gettering and Defect Engineering in Semiconductor Technology XIII; Preface; Committeess; Table of Contents; I. Multi-Crystalline Silicon for Solar Cells; Influence of Defects on Solar Cell Characteristics; Dislocation Engineering in Multicrystalline Silicon; Grain Boundaries in Multicrystalline Si; Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon; Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells; Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon. Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline SiliconAn Investigation into Fracture of Multi-Crystalline Silicon; II. Advanced Semiconductor Materials: Strained Si, SOI, SiGe, SiC; Strained Silicon Devices; Novel Trends in SOI Technology for CMOS Applications; Advanced Si-based Semiconductors for Energy and Photonic Applications; Si Wafer Bonding: Structural Features of the Interface; Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing. Growth of Heavily Phosphorus-Doped (111) Silicon CrystalsSemi-Insulating Silicon for Microwave Devices; III. Impurities (Oxygen, Carbon, Nitrogen, Metals) and Point Defects in Si and SiGe; Can Impurities be Beneficial to Photovoltaics?; Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors; The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures; Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies. Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon CrystalsVacancies and Self-Interstitials Dynamics in Silicon Wafers; Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface; Anomalous Out-Diffusion Profiles of Nitrogen in Silicon; DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon ; Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing; Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms. Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium LayersOxygen Diffusion in Si1-xGex Alloys; The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon; IV. Modeling and Simulation of Growth, Gettering and Characterization; Numerical Analysis of mc-Si Crystal Growth; Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates; Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects. Semiconductors Congresses. Solid state electronics Congresses. Semi-conducteurs Congrès. Électronique de l'état solide Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Semiconductors fast Solid state electronics fast |
| title | Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / |
| title_alt | GADEST 2009 |
| title_auth | Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / |
| title_exact_search | Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / |
| title_full | Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / edited by M. Kittler and H. Richter. |
| title_fullStr | Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / edited by M. Kittler and H. Richter. |
| title_full_unstemmed | Gettering and defect engineering in semiconductor technology XIII : GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / edited by M. Kittler and H. Richter. |
| title_short | Gettering and defect engineering in semiconductor technology XIII : |
| title_sort | gettering and defect engineering in semiconductor technology xiii gadest 2009 proceedings of the xiiith international autumn meeting dolnsee schorfheide north of berlin germany september 26 october 02 2009 |
| title_sub | GADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September 26-October 02, 2009 / |
| topic | Semiconductors Congresses. Solid state electronics Congresses. Semi-conducteurs Congrès. Électronique de l'état solide Congrès. TECHNOLOGY & ENGINEERING Engineering (General) bisacsh TECHNOLOGY & ENGINEERING Reference. bisacsh Semiconductors fast Solid state electronics fast |
| topic_facet | Semiconductors Congresses. Solid state electronics Congresses. Semi-conducteurs Congrès. Électronique de l'état solide Congrès. TECHNOLOGY & ENGINEERING Engineering (General) TECHNOLOGY & ENGINEERING Reference. Semiconductors Solid state electronics Conference papers and proceedings |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=503559 |
| work_keys_str_mv | AT internationalautumnmeetinggetteringanddefectengineeringinsemiconductortechnologydolnseeschorfheidegermany getteringanddefectengineeringinsemiconductortechnologyxiiigadest2009proceedingsofthexiiithinternationalautumnmeetingdolnseeschorfheidenorthofberlingermanyseptember26october022009 AT kittlermartin getteringanddefectengineeringinsemiconductortechnologyxiiigadest2009proceedingsofthexiiithinternationalautumnmeetingdolnseeschorfheidenorthofberlingermanyseptember26october022009 AT richterh getteringanddefectengineeringinsemiconductortechnologyxiiigadest2009proceedingsofthexiiithinternationalautumnmeetingdolnseeschorfheidenorthofberlingermanyseptember26october022009 AT internationalautumnmeetinggetteringanddefectengineeringinsemiconductortechnologydolnseeschorfheidegermany gadest2009 AT kittlermartin gadest2009 AT richterh gadest2009 |