Silicon surfaces and formation of interfaces :: basic science in the industrial world /
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physi...
Gespeichert in:
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| Weitere Verfasser: | |
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore ; River Edge, NJ :
World Scientific,
©2000.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded. |
| Beschreibung: | 1 online resource (xxiv, 550 pages) : illustrations |
| Bibliographie: | Includes bibliographical references (pages 463-506) and indexes. |
| ISBN: | 9789812813657 9812813659 |
Internformat
MARC
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| 100 | 1 | |a Dabrowski, Jarek. | |
| 245 | 1 | 0 | |a Silicon surfaces and formation of interfaces : |b basic science in the industrial world / |c Jarek Dabrowski, Hans-Joachim Müssig. |
| 260 | |a Singapore ; |a River Edge, NJ : |b World Scientific, |c ©2000. | ||
| 300 | |a 1 online resource (xxiv, 550 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references (pages 463-506) and indexes. | ||
| 505 | 0 | 0 | |t The Silicon Age -- |t The omnipresent silicon -- |t The MOS technology -- |t Miniaturization -- |t Technological MOS processes -- |t Methods of Modern Surface Science -- |t Theoretical techniques -- |t Approximations in ab initio studies -- |t Convergency issues -- |t Tight-binding methods -- |t Experimental techniques -- |t Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) -- |t Atomic Force Microscope (AFM) -- |t Low Energy Electron Diffraction (LEED) -- |t Auger Electron Spectroscopy (AES) -- |t X-Ray Photoelectron Spectroscopy (XPS) -- |t Ultraviolet Photoelectron Spectroscopy (UPS) -- |t Absorption and Diffraction of X-Rays -- |t Ion Spectroscopies -- |t High Resolution Electron Energy Loss Spectroscopy (HREELS) -- |t Other Surface Science Techniques -- |t Silicon Surfaces and Interfaces -- |t Fundamental concepts -- |t Ideal Truncated bulk and surface energy -- |t Realistic clean surfaces -- |t Free surfaces -- |t Defects on the surface and in the bulk -- |t Adsorption and epitaxial growth -- |t Desorption, etching, cleaning, cleaving -- |t Buried interfaces -- |t Primary Silicon Surfaces and Their Vicinals -- |t Structures of Si(001) -- |t Structures of Si(111) -- |t Si(11n) surfaces -- |t Structures of Si(113) -- |t Structures of Si(110) -- |t The Famous Reconstruction of Si(001) -- |t Overview: expectations bias our predictions -- |t Pre-STM Era: Groping through the Dark -- |t Early observations and models -- |t The first idea: 2 [times] 1 order of dimers -- |t The first alternative and the first puzzle -- |t Dimers, chains, vacancies, or maybe something else? -- |t Soft phonons, double bonds, and rediscoveries. |
| 588 | 0 | |a Print version record. | |
| 520 | |a Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded. | ||
| 650 | 0 | |a Silicon |x Surfaces. | |
| 650 | 0 | |a Surface chemistry. |0 http://id.loc.gov/authorities/subjects/sh85130718 | |
| 650 | 6 | |a Silicium |x Surfaces. | |
| 650 | 6 | |a Chimie des surfaces. | |
| 650 | 7 | |a SCIENCE |x Chemistry |x Inorganic. |2 bisacsh | |
| 650 | 7 | |a Silicon |x Surfaces |2 fast | |
| 650 | 7 | |a Surface chemistry |2 fast | |
| 650 | 7 | |a Grenzfläche |2 gnd |0 http://d-nb.info/gnd/4021991-4 | |
| 650 | 7 | |a Oberfläche |2 gnd |0 http://d-nb.info/gnd/4042907-6 | |
| 650 | 7 | |a Silicium |2 gnd |0 http://d-nb.info/gnd/4077445-4 | |
| 700 | 1 | |a Müssig, Hans-Joachim. | |
| 776 | 0 | 8 | |i Print version: |a Dabrowski, Jarek. |t Silicon surfaces and formation of interfaces. |d Singapore ; River Edge, NJ : World Scientific, ©2000 |z 9810232861 |w (DLC) 99089210 |w (OCoLC)43063253 |
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Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocn826660205 |
|---|---|
| _version_ | 1816882221005406208 |
| adam_text | |
| any_adam_object | |
| author | Dabrowski, Jarek |
| author2 | Müssig, Hans-Joachim |
| author2_role | |
| author2_variant | h j m hjm |
| author_facet | Dabrowski, Jarek Müssig, Hans-Joachim |
| author_role | |
| author_sort | Dabrowski, Jarek |
| author_variant | j d jd |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | Q - Science |
| callnumber-label | QD412 |
| callnumber-raw | QD412.S6 D33 2000eb |
| callnumber-search | QD412.S6 D33 2000eb |
| callnumber-sort | QD 3412 S6 D33 42000EB |
| callnumber-subject | QD - Chemistry |
| classification_rvk | UP 7570 |
| classification_tum | PHY 697f PHY 690f |
| collection | ZDB-4-EBA |
| contents | The Silicon Age -- The omnipresent silicon -- The MOS technology -- Miniaturization -- Technological MOS processes -- Methods of Modern Surface Science -- Theoretical techniques -- Approximations in ab initio studies -- Convergency issues -- Tight-binding methods -- Experimental techniques -- Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) -- Atomic Force Microscope (AFM) -- Low Energy Electron Diffraction (LEED) -- Auger Electron Spectroscopy (AES) -- X-Ray Photoelectron Spectroscopy (XPS) -- Ultraviolet Photoelectron Spectroscopy (UPS) -- Absorption and Diffraction of X-Rays -- Ion Spectroscopies -- High Resolution Electron Energy Loss Spectroscopy (HREELS) -- Other Surface Science Techniques -- Silicon Surfaces and Interfaces -- Fundamental concepts -- Ideal Truncated bulk and surface energy -- Realistic clean surfaces -- Free surfaces -- Defects on the surface and in the bulk -- Adsorption and epitaxial growth -- Desorption, etching, cleaning, cleaving -- Buried interfaces -- Primary Silicon Surfaces and Their Vicinals -- Structures of Si(001) -- Structures of Si(111) -- Si(11n) surfaces -- Structures of Si(113) -- Structures of Si(110) -- The Famous Reconstruction of Si(001) -- Overview: expectations bias our predictions -- Pre-STM Era: Groping through the Dark -- Early observations and models -- The first idea: 2 [times] 1 order of dimers -- The first alternative and the first puzzle -- Dimers, chains, vacancies, or maybe something else? -- Soft phonons, double bonds, and rediscoveries. |
| ctrlnum | (OCoLC)826660205 |
| dewey-full | 546/.68353 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 546 - Inorganic chemistry |
| dewey-raw | 546/.68353 |
| dewey-search | 546/.68353 |
| dewey-sort | 3546 568353 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie Physik |
| format | Electronic eBook |
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| id | ZDB-4-EBA-ocn826660205 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:25:10Z |
| institution | BVB |
| isbn | 9789812813657 9812813659 |
| language | English |
| oclc_num | 826660205 |
| open_access_boolean | |
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| physical | 1 online resource (xxiv, 550 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | World Scientific, |
| record_format | marc |
| spelling | Dabrowski, Jarek. Silicon surfaces and formation of interfaces : basic science in the industrial world / Jarek Dabrowski, Hans-Joachim Müssig. Singapore ; River Edge, NJ : World Scientific, ©2000. 1 online resource (xxiv, 550 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Includes bibliographical references (pages 463-506) and indexes. The Silicon Age -- The omnipresent silicon -- The MOS technology -- Miniaturization -- Technological MOS processes -- Methods of Modern Surface Science -- Theoretical techniques -- Approximations in ab initio studies -- Convergency issues -- Tight-binding methods -- Experimental techniques -- Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) -- Atomic Force Microscope (AFM) -- Low Energy Electron Diffraction (LEED) -- Auger Electron Spectroscopy (AES) -- X-Ray Photoelectron Spectroscopy (XPS) -- Ultraviolet Photoelectron Spectroscopy (UPS) -- Absorption and Diffraction of X-Rays -- Ion Spectroscopies -- High Resolution Electron Energy Loss Spectroscopy (HREELS) -- Other Surface Science Techniques -- Silicon Surfaces and Interfaces -- Fundamental concepts -- Ideal Truncated bulk and surface energy -- Realistic clean surfaces -- Free surfaces -- Defects on the surface and in the bulk -- Adsorption and epitaxial growth -- Desorption, etching, cleaning, cleaving -- Buried interfaces -- Primary Silicon Surfaces and Their Vicinals -- Structures of Si(001) -- Structures of Si(111) -- Si(11n) surfaces -- Structures of Si(113) -- Structures of Si(110) -- The Famous Reconstruction of Si(001) -- Overview: expectations bias our predictions -- Pre-STM Era: Groping through the Dark -- Early observations and models -- The first idea: 2 [times] 1 order of dimers -- The first alternative and the first puzzle -- Dimers, chains, vacancies, or maybe something else? -- Soft phonons, double bonds, and rediscoveries. Print version record. Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded. Silicon Surfaces. Surface chemistry. http://id.loc.gov/authorities/subjects/sh85130718 Silicium Surfaces. Chimie des surfaces. SCIENCE Chemistry Inorganic. bisacsh Silicon Surfaces fast Surface chemistry fast Grenzfläche gnd http://d-nb.info/gnd/4021991-4 Oberfläche gnd http://d-nb.info/gnd/4042907-6 Silicium gnd http://d-nb.info/gnd/4077445-4 Müssig, Hans-Joachim. Print version: Dabrowski, Jarek. Silicon surfaces and formation of interfaces. Singapore ; River Edge, NJ : World Scientific, ©2000 9810232861 (DLC) 99089210 (OCoLC)43063253 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=513981 Volltext |
| spellingShingle | Dabrowski, Jarek Silicon surfaces and formation of interfaces : basic science in the industrial world / The Silicon Age -- The omnipresent silicon -- The MOS technology -- Miniaturization -- Technological MOS processes -- Methods of Modern Surface Science -- Theoretical techniques -- Approximations in ab initio studies -- Convergency issues -- Tight-binding methods -- Experimental techniques -- Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) -- Atomic Force Microscope (AFM) -- Low Energy Electron Diffraction (LEED) -- Auger Electron Spectroscopy (AES) -- X-Ray Photoelectron Spectroscopy (XPS) -- Ultraviolet Photoelectron Spectroscopy (UPS) -- Absorption and Diffraction of X-Rays -- Ion Spectroscopies -- High Resolution Electron Energy Loss Spectroscopy (HREELS) -- Other Surface Science Techniques -- Silicon Surfaces and Interfaces -- Fundamental concepts -- Ideal Truncated bulk and surface energy -- Realistic clean surfaces -- Free surfaces -- Defects on the surface and in the bulk -- Adsorption and epitaxial growth -- Desorption, etching, cleaning, cleaving -- Buried interfaces -- Primary Silicon Surfaces and Their Vicinals -- Structures of Si(001) -- Structures of Si(111) -- Si(11n) surfaces -- Structures of Si(113) -- Structures of Si(110) -- The Famous Reconstruction of Si(001) -- Overview: expectations bias our predictions -- Pre-STM Era: Groping through the Dark -- Early observations and models -- The first idea: 2 [times] 1 order of dimers -- The first alternative and the first puzzle -- Dimers, chains, vacancies, or maybe something else? -- Soft phonons, double bonds, and rediscoveries. Silicon Surfaces. Surface chemistry. http://id.loc.gov/authorities/subjects/sh85130718 Silicium Surfaces. Chimie des surfaces. SCIENCE Chemistry Inorganic. bisacsh Silicon Surfaces fast Surface chemistry fast Grenzfläche gnd http://d-nb.info/gnd/4021991-4 Oberfläche gnd http://d-nb.info/gnd/4042907-6 Silicium gnd http://d-nb.info/gnd/4077445-4 |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85130718 http://d-nb.info/gnd/4021991-4 http://d-nb.info/gnd/4042907-6 http://d-nb.info/gnd/4077445-4 |
| title | Silicon surfaces and formation of interfaces : basic science in the industrial world / |
| title_alt | The Silicon Age -- The omnipresent silicon -- The MOS technology -- Miniaturization -- Technological MOS processes -- Methods of Modern Surface Science -- Theoretical techniques -- Approximations in ab initio studies -- Convergency issues -- Tight-binding methods -- Experimental techniques -- Scanning Tunneling Microscopy (STM) and Spectroscopy (STS) -- Atomic Force Microscope (AFM) -- Low Energy Electron Diffraction (LEED) -- Auger Electron Spectroscopy (AES) -- X-Ray Photoelectron Spectroscopy (XPS) -- Ultraviolet Photoelectron Spectroscopy (UPS) -- Absorption and Diffraction of X-Rays -- Ion Spectroscopies -- High Resolution Electron Energy Loss Spectroscopy (HREELS) -- Other Surface Science Techniques -- Silicon Surfaces and Interfaces -- Fundamental concepts -- Ideal Truncated bulk and surface energy -- Realistic clean surfaces -- Free surfaces -- Defects on the surface and in the bulk -- Adsorption and epitaxial growth -- Desorption, etching, cleaning, cleaving -- Buried interfaces -- Primary Silicon Surfaces and Their Vicinals -- Structures of Si(001) -- Structures of Si(111) -- Si(11n) surfaces -- Structures of Si(113) -- Structures of Si(110) -- The Famous Reconstruction of Si(001) -- Overview: expectations bias our predictions -- Pre-STM Era: Groping through the Dark -- Early observations and models -- The first idea: 2 [times] 1 order of dimers -- The first alternative and the first puzzle -- Dimers, chains, vacancies, or maybe something else? -- Soft phonons, double bonds, and rediscoveries. |
| title_auth | Silicon surfaces and formation of interfaces : basic science in the industrial world / |
| title_exact_search | Silicon surfaces and formation of interfaces : basic science in the industrial world / |
| title_full | Silicon surfaces and formation of interfaces : basic science in the industrial world / Jarek Dabrowski, Hans-Joachim Müssig. |
| title_fullStr | Silicon surfaces and formation of interfaces : basic science in the industrial world / Jarek Dabrowski, Hans-Joachim Müssig. |
| title_full_unstemmed | Silicon surfaces and formation of interfaces : basic science in the industrial world / Jarek Dabrowski, Hans-Joachim Müssig. |
| title_short | Silicon surfaces and formation of interfaces : |
| title_sort | silicon surfaces and formation of interfaces basic science in the industrial world |
| title_sub | basic science in the industrial world / |
| topic | Silicon Surfaces. Surface chemistry. http://id.loc.gov/authorities/subjects/sh85130718 Silicium Surfaces. Chimie des surfaces. SCIENCE Chemistry Inorganic. bisacsh Silicon Surfaces fast Surface chemistry fast Grenzfläche gnd http://d-nb.info/gnd/4021991-4 Oberfläche gnd http://d-nb.info/gnd/4042907-6 Silicium gnd http://d-nb.info/gnd/4077445-4 |
| topic_facet | Silicon Surfaces. Surface chemistry. Silicium Surfaces. Chimie des surfaces. SCIENCE Chemistry Inorganic. Silicon Surfaces Surface chemistry Grenzfläche Oberfläche Silicium |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=513981 |
| work_keys_str_mv | AT dabrowskijarek siliconsurfacesandformationofinterfacesbasicscienceintheindustrialworld AT mussighansjoachim siliconsurfacesandformationofinterfacesbasicscienceintheindustrialworld |