Lattice dynamics and semiconductor physics :: festschrift for Professor Kun Huang /
This review volume consists of scientific articles representing the frontier and most advanced progress in the field of semiconductor physics and lattice dynamics.
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore ; Teaneck, NJ :
World Scientific,
1990.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This review volume consists of scientific articles representing the frontier and most advanced progress in the field of semiconductor physics and lattice dynamics. |
| Beschreibung: | Errata inserted. |
| Beschreibung: | 1 online resource (ix, 613 pages) : illustrations |
| Format: | Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |
| Bibliographie: | Includes bibliographical references. |
| ISBN: | 9789814368346 9814368342 |
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| 049 | |a MAIN | ||
| 245 | 0 | 0 | |a Lattice dynamics and semiconductor physics : |b festschrift for Professor Kun Huang / |c [C.N. Yang and others]. |
| 260 | |a Singapore ; |a Teaneck, NJ : |b World Scientific, |c 1990. | ||
| 300 | |a 1 online resource (ix, 613 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references. | ||
| 500 | |a Errata inserted. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2012. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2012 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a PREFACE; MODERN PHYSICS AND WARM FRIENDSHIP; PART A LATTICE DYNAMICS; ELECTRON-PHONON INTERACTION REVEALED BY RAMAN AND INFRARED SPECTROSCOPY; 1. INTRODUCTION; 2.2.2. Electron-phonon coupling in layered insertion materials. In2Se3 and InSe; 3. ELECTRON-PHONON INTERACTION REVEALED BY LIGHT SCATTERING.; 3.1. Light Scattering on Single Excitations.; 3.2. Light Scattering by Plasmons.; 3.3. Observation of the Plasmon-Phonon Coupling by Light Scattering.; REFERENCES; FIRST-PRINCIPLES STUDIES OF LATTICE DYNAMICS AND ELECTRONIC PROPERTIES OF SEMICONDUCTORS; I. INTRODUCTION. | |
| 505 | 8 | |a II. GROUND STATE ENERGY OF A SOLIDA. Density-functional theory; B. Electron-ion potential; Direct summation over the conduction bands.; Direct summation.; B. Ground state properties; C. Electronic properties; V. CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; POINT DEFECTS AND RECOMBINATION IN SEMICONDUCTORS; 1. INTRODUCTION; 2. ENERGY LEVELS OF LOCALIZED POINT DEFECTS; 2.1 Defect Wave Function Localization and Electron-Phonon Coupling -- Extrinsic Self-Trapping; 2.2 Metastable Defects (DX-centers); 2.2.1. Donors in CdF2.; 2.2.2. DX centers in AlGaAs.; 2.2.3. Structural models of metastable defects. | |
| 505 | 8 | |a 2.3 Many-Electron Phenomena2.3.1 Problem of negative-U.; 2.3.2 Transition metal impurity levels.; 3. DEFECT MEDIATED RECOMBINATION; 3.1 Multiphonon Processes; 3.2 Auger-type processes; 3.1. Auger-type carrier trapping; 3.2. Luminescence quenching by the Auger effect; 3.3 Recombination enhanced defect reactions; 4. CONCLUDING REMARKS; 5. REFERENCES; MOLECULAR DYNAMICS AND QUANTUM MONTE CARLO SIMULATIONS OF STATIC AND DYNAMICAL PROPERTIES OF BULK AND SURFACE PHONONS; 1. INTRODUCTION; 2. PATH INTEGRAL QUANTUM MONTE CARLO EVALUATION OF THERMODYNAMIC FUNCTIONS OF ANHARMONIC CRYSTALS. | |
| 505 | 8 | |a 3. MOLECULAR DYNAMICS SIMULATIONS OF SURFACE PHONONS4. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; LASER STUDIES OF POLARITONS; REFERENCES; QUANTAL VERSUS CLASSICAL PICTURES FOR THE OPTICALLY EXCITED ELECTRON INTERACTING WITH PHONONS; 1. Introduction; 2. The Zero-Phonon Line and the Phonon Sidebands; 3. The Classical Limit and the Interaction Mode; 4. Quantal versus Classical Pictures; References; Phonoriton: A New Elementary Excitation in Semiconductors under Intense Pump Conditions; 0. Historical Background; 1. Introduction; 2. Two level system; 3. Existence Conditions For Phonoriton. | |
| 505 | 8 | |a 4. Phonoriton: Relation to Inverse Raman Scattering5. Experimental Detection of the Phonoriton; a) A Proposed Non -Linear RBS Experiment; b) A Proposed Reflection Experiment; 6 Threshold behavior, Coherence and Noise, Squeezing; 7. Concluding Remark; References; Quantum Theory of Surface Phonon-Polaritons; I. INTRODUCTION; II. BASIC VIEWPOINT OF THE QUANTUM THEORY METHOD; 2.1 Some Difficulties; 2.2 Main Contents of The Quantum Theory of Surface Phonon-Polaritons; III. HAMILTONIAN OF THE PH0N0N-PH0T0N INTERACTION SYSTEM; 3.1 The Matter Hamiltonian; 3.2 The Radiation Hamiltonian. | |
| 520 | |a This review volume consists of scientific articles representing the frontier and most advanced progress in the field of semiconductor physics and lattice dynamics. | ||
| 600 | 1 | 0 | |a Huang, Kun, |d 1919-2005. |
| 600 | 1 | 7 | |a Huang, Kun, |d 1919-2005 |2 fast |1 https://id.oclc.org/worldcat/entity/E39PBJmy3vdcqyvk9yYy78YVmd |
| 650 | 0 | |a Lattice dynamics. |0 http://id.loc.gov/authorities/subjects/sh85074986 | |
| 650 | 0 | |a Semiconductors. |0 http://id.loc.gov/authorities/subjects/sh85119903 | |
| 650 | 2 | |a Semiconductors |0 https://id.nlm.nih.gov/mesh/D012666 | |
| 650 | 6 | |a Dynamique réticulaire. | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a SCIENCE |x Nanoscience. |2 bisacsh | |
| 650 | 7 | |a Lattice dynamics |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Dynamique réticulaire. |2 ram | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 655 | 7 | |a Festschriften |2 fast | |
| 655 | 7 | |a Festschriften. |2 lcgft |0 http://id.loc.gov/authorities/genreForms/gf2016026082 | |
| 700 | 1 | |a Yang, Chen Ning, |d 1922- |1 https://id.oclc.org/worldcat/entity/E39PBJhGY7dwr3K4Pf9TVWPbBP |0 http://id.loc.gov/authorities/names/n82102558 | |
| 700 | 1 | |a Huang, Kun, |d 1919-2005. |1 https://id.oclc.org/worldcat/entity/E39PCjwT9VbxRBtjWxtbBBCXwK | |
| 776 | 0 | 8 | |i Print version: |t Lattice dynamics and semiconductor physics. |d Singapore ; Teaneck, NJ : World Scientific, 1990 |w (OCoLC)21586572 |
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Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocn801245878 |
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| _version_ | 1816882200918884352 |
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| author2 | Yang, Chen Ning, 1922- Huang, Kun, 1919-2005 |
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| author_sort | Yang, Chen Ning, 1922- |
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| callnumber-subject | QD - Chemistry |
| collection | ZDB-4-EBA |
| contents | PREFACE; MODERN PHYSICS AND WARM FRIENDSHIP; PART A LATTICE DYNAMICS; ELECTRON-PHONON INTERACTION REVEALED BY RAMAN AND INFRARED SPECTROSCOPY; 1. INTRODUCTION; 2.2.2. Electron-phonon coupling in layered insertion materials. In2Se3 and InSe; 3. ELECTRON-PHONON INTERACTION REVEALED BY LIGHT SCATTERING.; 3.1. Light Scattering on Single Excitations.; 3.2. Light Scattering by Plasmons.; 3.3. Observation of the Plasmon-Phonon Coupling by Light Scattering.; REFERENCES; FIRST-PRINCIPLES STUDIES OF LATTICE DYNAMICS AND ELECTRONIC PROPERTIES OF SEMICONDUCTORS; I. INTRODUCTION. II. GROUND STATE ENERGY OF A SOLIDA. Density-functional theory; B. Electron-ion potential; Direct summation over the conduction bands.; Direct summation.; B. Ground state properties; C. Electronic properties; V. CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; POINT DEFECTS AND RECOMBINATION IN SEMICONDUCTORS; 1. INTRODUCTION; 2. ENERGY LEVELS OF LOCALIZED POINT DEFECTS; 2.1 Defect Wave Function Localization and Electron-Phonon Coupling -- Extrinsic Self-Trapping; 2.2 Metastable Defects (DX-centers); 2.2.1. Donors in CdF2.; 2.2.2. DX centers in AlGaAs.; 2.2.3. Structural models of metastable defects. 2.3 Many-Electron Phenomena2.3.1 Problem of negative-U.; 2.3.2 Transition metal impurity levels.; 3. DEFECT MEDIATED RECOMBINATION; 3.1 Multiphonon Processes; 3.2 Auger-type processes; 3.1. Auger-type carrier trapping; 3.2. Luminescence quenching by the Auger effect; 3.3 Recombination enhanced defect reactions; 4. CONCLUDING REMARKS; 5. REFERENCES; MOLECULAR DYNAMICS AND QUANTUM MONTE CARLO SIMULATIONS OF STATIC AND DYNAMICAL PROPERTIES OF BULK AND SURFACE PHONONS; 1. INTRODUCTION; 2. PATH INTEGRAL QUANTUM MONTE CARLO EVALUATION OF THERMODYNAMIC FUNCTIONS OF ANHARMONIC CRYSTALS. 3. MOLECULAR DYNAMICS SIMULATIONS OF SURFACE PHONONS4. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; LASER STUDIES OF POLARITONS; REFERENCES; QUANTAL VERSUS CLASSICAL PICTURES FOR THE OPTICALLY EXCITED ELECTRON INTERACTING WITH PHONONS; 1. Introduction; 2. The Zero-Phonon Line and the Phonon Sidebands; 3. The Classical Limit and the Interaction Mode; 4. Quantal versus Classical Pictures; References; Phonoriton: A New Elementary Excitation in Semiconductors under Intense Pump Conditions; 0. Historical Background; 1. Introduction; 2. Two level system; 3. Existence Conditions For Phonoriton. 4. Phonoriton: Relation to Inverse Raman Scattering5. Experimental Detection of the Phonoriton; a) A Proposed Non -Linear RBS Experiment; b) A Proposed Reflection Experiment; 6 Threshold behavior, Coherence and Noise, Squeezing; 7. Concluding Remark; References; Quantum Theory of Surface Phonon-Polaritons; I. INTRODUCTION; II. BASIC VIEWPOINT OF THE QUANTUM THEORY METHOD; 2.1 Some Difficulties; 2.2 Main Contents of The Quantum Theory of Surface Phonon-Polaritons; III. HAMILTONIAN OF THE PH0N0N-PH0T0N INTERACTION SYSTEM; 3.1 The Matter Hamiltonian; 3.2 The Radiation Hamiltonian. |
| ctrlnum | (OCoLC)801245878 |
| dewey-full | 530.411 |
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| dewey-ones | 530 - Physics |
| dewey-raw | 530.411 |
| dewey-search | 530.411 |
| dewey-sort | 3530.411 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Electronic eBook |
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Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.</subfield><subfield code="u">http://purl.oclc.org/DLF/benchrepro0212</subfield><subfield code="5">MiAaHDL</subfield></datafield><datafield tag="583" ind1="1" ind2=" "><subfield code="a">digitized</subfield><subfield code="c">2012</subfield><subfield code="h">HathiTrust Digital Library</subfield><subfield code="l">committed to preserve</subfield><subfield code="2">pda</subfield><subfield code="5">MiAaHDL</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">PREFACE; MODERN PHYSICS AND WARM FRIENDSHIP; PART A LATTICE DYNAMICS; ELECTRON-PHONON INTERACTION REVEALED BY RAMAN AND INFRARED SPECTROSCOPY; 1. INTRODUCTION; 2.2.2. Electron-phonon coupling in layered insertion materials. In2Se3 and InSe; 3. ELECTRON-PHONON INTERACTION REVEALED BY LIGHT SCATTERING.; 3.1. Light Scattering on Single Excitations.; 3.2. Light Scattering by Plasmons.; 3.3. Observation of the Plasmon-Phonon Coupling by Light Scattering.; REFERENCES; FIRST-PRINCIPLES STUDIES OF LATTICE DYNAMICS AND ELECTRONIC PROPERTIES OF SEMICONDUCTORS; I. INTRODUCTION.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">II. GROUND STATE ENERGY OF A SOLIDA. Density-functional theory; B. Electron-ion potential; Direct summation over the conduction bands.; Direct summation.; B. Ground state properties; C. Electronic properties; V. CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; POINT DEFECTS AND RECOMBINATION IN SEMICONDUCTORS; 1. INTRODUCTION; 2. ENERGY LEVELS OF LOCALIZED POINT DEFECTS; 2.1 Defect Wave Function Localization and Electron-Phonon Coupling -- Extrinsic Self-Trapping; 2.2 Metastable Defects (DX-centers); 2.2.1. Donors in CdF2.; 2.2.2. DX centers in AlGaAs.; 2.2.3. Structural models of metastable defects.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">2.3 Many-Electron Phenomena2.3.1 Problem of negative-U.; 2.3.2 Transition metal impurity levels.; 3. DEFECT MEDIATED RECOMBINATION; 3.1 Multiphonon Processes; 3.2 Auger-type processes; 3.1. Auger-type carrier trapping; 3.2. Luminescence quenching by the Auger effect; 3.3 Recombination enhanced defect reactions; 4. CONCLUDING REMARKS; 5. REFERENCES; MOLECULAR DYNAMICS AND QUANTUM MONTE CARLO SIMULATIONS OF STATIC AND DYNAMICAL PROPERTIES OF BULK AND SURFACE PHONONS; 1. INTRODUCTION; 2. PATH INTEGRAL QUANTUM MONTE CARLO EVALUATION OF THERMODYNAMIC FUNCTIONS OF ANHARMONIC CRYSTALS.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">3. MOLECULAR DYNAMICS SIMULATIONS OF SURFACE PHONONS4. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; LASER STUDIES OF POLARITONS; REFERENCES; QUANTAL VERSUS CLASSICAL PICTURES FOR THE OPTICALLY EXCITED ELECTRON INTERACTING WITH PHONONS; 1. Introduction; 2. The Zero-Phonon Line and the Phonon Sidebands; 3. The Classical Limit and the Interaction Mode; 4. Quantal versus Classical Pictures; References; Phonoriton: A New Elementary Excitation in Semiconductors under Intense Pump Conditions; 0. Historical Background; 1. Introduction; 2. Two level system; 3. Existence Conditions For Phonoriton.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">4. Phonoriton: Relation to Inverse Raman Scattering5. Experimental Detection of the Phonoriton; a) A Proposed Non -Linear RBS Experiment; b) A Proposed Reflection Experiment; 6 Threshold behavior, Coherence and Noise, Squeezing; 7. Concluding Remark; References; Quantum Theory of Surface Phonon-Polaritons; I. INTRODUCTION; II. BASIC VIEWPOINT OF THE QUANTUM THEORY METHOD; 2.1 Some Difficulties; 2.2 Main Contents of The Quantum Theory of Surface Phonon-Polaritons; III. 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| genre | Festschriften fast Festschriften. lcgft http://id.loc.gov/authorities/genreForms/gf2016026082 |
| genre_facet | Festschriften Festschriften. |
| id | ZDB-4-EBA-ocn801245878 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:24:50Z |
| institution | BVB |
| isbn | 9789814368346 9814368342 |
| language | English |
| oclc_num | 801245878 |
| open_access_boolean | |
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| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (ix, 613 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 1990 |
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| publisher | World Scientific, |
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| spelling | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / [C.N. Yang and others]. Singapore ; Teaneck, NJ : World Scientific, 1990. 1 online resource (ix, 613 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Includes bibliographical references. Errata inserted. Use copy Restrictions unspecified star MiAaHDL Electronic reproduction. [Place of publication not identified] : HathiTrust Digital Library, 2012. MiAaHDL Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL digitized 2012 HathiTrust Digital Library committed to preserve pda MiAaHDL Print version record. PREFACE; MODERN PHYSICS AND WARM FRIENDSHIP; PART A LATTICE DYNAMICS; ELECTRON-PHONON INTERACTION REVEALED BY RAMAN AND INFRARED SPECTROSCOPY; 1. INTRODUCTION; 2.2.2. Electron-phonon coupling in layered insertion materials. In2Se3 and InSe; 3. ELECTRON-PHONON INTERACTION REVEALED BY LIGHT SCATTERING.; 3.1. Light Scattering on Single Excitations.; 3.2. Light Scattering by Plasmons.; 3.3. Observation of the Plasmon-Phonon Coupling by Light Scattering.; REFERENCES; FIRST-PRINCIPLES STUDIES OF LATTICE DYNAMICS AND ELECTRONIC PROPERTIES OF SEMICONDUCTORS; I. INTRODUCTION. II. GROUND STATE ENERGY OF A SOLIDA. Density-functional theory; B. Electron-ion potential; Direct summation over the conduction bands.; Direct summation.; B. Ground state properties; C. Electronic properties; V. CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; POINT DEFECTS AND RECOMBINATION IN SEMICONDUCTORS; 1. INTRODUCTION; 2. ENERGY LEVELS OF LOCALIZED POINT DEFECTS; 2.1 Defect Wave Function Localization and Electron-Phonon Coupling -- Extrinsic Self-Trapping; 2.2 Metastable Defects (DX-centers); 2.2.1. Donors in CdF2.; 2.2.2. DX centers in AlGaAs.; 2.2.3. Structural models of metastable defects. 2.3 Many-Electron Phenomena2.3.1 Problem of negative-U.; 2.3.2 Transition metal impurity levels.; 3. DEFECT MEDIATED RECOMBINATION; 3.1 Multiphonon Processes; 3.2 Auger-type processes; 3.1. Auger-type carrier trapping; 3.2. Luminescence quenching by the Auger effect; 3.3 Recombination enhanced defect reactions; 4. CONCLUDING REMARKS; 5. REFERENCES; MOLECULAR DYNAMICS AND QUANTUM MONTE CARLO SIMULATIONS OF STATIC AND DYNAMICAL PROPERTIES OF BULK AND SURFACE PHONONS; 1. INTRODUCTION; 2. PATH INTEGRAL QUANTUM MONTE CARLO EVALUATION OF THERMODYNAMIC FUNCTIONS OF ANHARMONIC CRYSTALS. 3. MOLECULAR DYNAMICS SIMULATIONS OF SURFACE PHONONS4. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; LASER STUDIES OF POLARITONS; REFERENCES; QUANTAL VERSUS CLASSICAL PICTURES FOR THE OPTICALLY EXCITED ELECTRON INTERACTING WITH PHONONS; 1. Introduction; 2. The Zero-Phonon Line and the Phonon Sidebands; 3. The Classical Limit and the Interaction Mode; 4. Quantal versus Classical Pictures; References; Phonoriton: A New Elementary Excitation in Semiconductors under Intense Pump Conditions; 0. Historical Background; 1. Introduction; 2. Two level system; 3. Existence Conditions For Phonoriton. 4. Phonoriton: Relation to Inverse Raman Scattering5. Experimental Detection of the Phonoriton; a) A Proposed Non -Linear RBS Experiment; b) A Proposed Reflection Experiment; 6 Threshold behavior, Coherence and Noise, Squeezing; 7. Concluding Remark; References; Quantum Theory of Surface Phonon-Polaritons; I. INTRODUCTION; II. BASIC VIEWPOINT OF THE QUANTUM THEORY METHOD; 2.1 Some Difficulties; 2.2 Main Contents of The Quantum Theory of Surface Phonon-Polaritons; III. HAMILTONIAN OF THE PH0N0N-PH0T0N INTERACTION SYSTEM; 3.1 The Matter Hamiltonian; 3.2 The Radiation Hamiltonian. This review volume consists of scientific articles representing the frontier and most advanced progress in the field of semiconductor physics and lattice dynamics. Huang, Kun, 1919-2005. Huang, Kun, 1919-2005 fast https://id.oclc.org/worldcat/entity/E39PBJmy3vdcqyvk9yYy78YVmd Lattice dynamics. http://id.loc.gov/authorities/subjects/sh85074986 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Dynamique réticulaire. Semi-conducteurs. semiconductor. aat SCIENCE Nanoscience. bisacsh Lattice dynamics fast Semiconductors fast Dynamique réticulaire. ram Semiconducteurs. ram Festschriften fast Festschriften. lcgft http://id.loc.gov/authorities/genreForms/gf2016026082 Yang, Chen Ning, 1922- https://id.oclc.org/worldcat/entity/E39PBJhGY7dwr3K4Pf9TVWPbBP http://id.loc.gov/authorities/names/n82102558 Huang, Kun, 1919-2005. https://id.oclc.org/worldcat/entity/E39PCjwT9VbxRBtjWxtbBBCXwK Print version: Lattice dynamics and semiconductor physics. Singapore ; Teaneck, NJ : World Scientific, 1990 (OCoLC)21586572 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=564793 Volltext |
| spellingShingle | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / PREFACE; MODERN PHYSICS AND WARM FRIENDSHIP; PART A LATTICE DYNAMICS; ELECTRON-PHONON INTERACTION REVEALED BY RAMAN AND INFRARED SPECTROSCOPY; 1. INTRODUCTION; 2.2.2. Electron-phonon coupling in layered insertion materials. In2Se3 and InSe; 3. ELECTRON-PHONON INTERACTION REVEALED BY LIGHT SCATTERING.; 3.1. Light Scattering on Single Excitations.; 3.2. Light Scattering by Plasmons.; 3.3. Observation of the Plasmon-Phonon Coupling by Light Scattering.; REFERENCES; FIRST-PRINCIPLES STUDIES OF LATTICE DYNAMICS AND ELECTRONIC PROPERTIES OF SEMICONDUCTORS; I. INTRODUCTION. II. GROUND STATE ENERGY OF A SOLIDA. Density-functional theory; B. Electron-ion potential; Direct summation over the conduction bands.; Direct summation.; B. Ground state properties; C. Electronic properties; V. CONCLUSIONS; ACKNOWLEDGMENT; REFERENCES; POINT DEFECTS AND RECOMBINATION IN SEMICONDUCTORS; 1. INTRODUCTION; 2. ENERGY LEVELS OF LOCALIZED POINT DEFECTS; 2.1 Defect Wave Function Localization and Electron-Phonon Coupling -- Extrinsic Self-Trapping; 2.2 Metastable Defects (DX-centers); 2.2.1. Donors in CdF2.; 2.2.2. DX centers in AlGaAs.; 2.2.3. Structural models of metastable defects. 2.3 Many-Electron Phenomena2.3.1 Problem of negative-U.; 2.3.2 Transition metal impurity levels.; 3. DEFECT MEDIATED RECOMBINATION; 3.1 Multiphonon Processes; 3.2 Auger-type processes; 3.1. Auger-type carrier trapping; 3.2. Luminescence quenching by the Auger effect; 3.3 Recombination enhanced defect reactions; 4. CONCLUDING REMARKS; 5. REFERENCES; MOLECULAR DYNAMICS AND QUANTUM MONTE CARLO SIMULATIONS OF STATIC AND DYNAMICAL PROPERTIES OF BULK AND SURFACE PHONONS; 1. INTRODUCTION; 2. PATH INTEGRAL QUANTUM MONTE CARLO EVALUATION OF THERMODYNAMIC FUNCTIONS OF ANHARMONIC CRYSTALS. 3. MOLECULAR DYNAMICS SIMULATIONS OF SURFACE PHONONS4. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; LASER STUDIES OF POLARITONS; REFERENCES; QUANTAL VERSUS CLASSICAL PICTURES FOR THE OPTICALLY EXCITED ELECTRON INTERACTING WITH PHONONS; 1. Introduction; 2. The Zero-Phonon Line and the Phonon Sidebands; 3. The Classical Limit and the Interaction Mode; 4. Quantal versus Classical Pictures; References; Phonoriton: A New Elementary Excitation in Semiconductors under Intense Pump Conditions; 0. Historical Background; 1. Introduction; 2. Two level system; 3. Existence Conditions For Phonoriton. 4. Phonoriton: Relation to Inverse Raman Scattering5. Experimental Detection of the Phonoriton; a) A Proposed Non -Linear RBS Experiment; b) A Proposed Reflection Experiment; 6 Threshold behavior, Coherence and Noise, Squeezing; 7. Concluding Remark; References; Quantum Theory of Surface Phonon-Polaritons; I. INTRODUCTION; II. BASIC VIEWPOINT OF THE QUANTUM THEORY METHOD; 2.1 Some Difficulties; 2.2 Main Contents of The Quantum Theory of Surface Phonon-Polaritons; III. HAMILTONIAN OF THE PH0N0N-PH0T0N INTERACTION SYSTEM; 3.1 The Matter Hamiltonian; 3.2 The Radiation Hamiltonian. Huang, Kun, 1919-2005. Huang, Kun, 1919-2005 fast https://id.oclc.org/worldcat/entity/E39PBJmy3vdcqyvk9yYy78YVmd Lattice dynamics. http://id.loc.gov/authorities/subjects/sh85074986 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Dynamique réticulaire. Semi-conducteurs. semiconductor. aat SCIENCE Nanoscience. bisacsh Lattice dynamics fast Semiconductors fast Dynamique réticulaire. ram Semiconducteurs. ram |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85074986 http://id.loc.gov/authorities/subjects/sh85119903 https://id.nlm.nih.gov/mesh/D012666 http://id.loc.gov/authorities/genreForms/gf2016026082 |
| title | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / |
| title_auth | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / |
| title_exact_search | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / |
| title_full | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / [C.N. Yang and others]. |
| title_fullStr | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / [C.N. Yang and others]. |
| title_full_unstemmed | Lattice dynamics and semiconductor physics : festschrift for Professor Kun Huang / [C.N. Yang and others]. |
| title_short | Lattice dynamics and semiconductor physics : |
| title_sort | lattice dynamics and semiconductor physics festschrift for professor kun huang |
| title_sub | festschrift for Professor Kun Huang / |
| topic | Huang, Kun, 1919-2005. Huang, Kun, 1919-2005 fast https://id.oclc.org/worldcat/entity/E39PBJmy3vdcqyvk9yYy78YVmd Lattice dynamics. http://id.loc.gov/authorities/subjects/sh85074986 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Dynamique réticulaire. Semi-conducteurs. semiconductor. aat SCIENCE Nanoscience. bisacsh Lattice dynamics fast Semiconductors fast Dynamique réticulaire. ram Semiconducteurs. ram |
| topic_facet | Huang, Kun, 1919-2005. Huang, Kun, 1919-2005 Lattice dynamics. Semiconductors. Semiconductors Dynamique réticulaire. Semi-conducteurs. semiconductor. SCIENCE Nanoscience. Lattice dynamics Semiconducteurs. Festschriften Festschriften. |
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