MOSFET modeling for circuit analysis and design /:
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Weitere Verfasser: | |
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore ; Hackensack, NJ :
World Scientific,
©2007.
|
| Schriftenreihe: | International series on advances in solid state electronics and technology.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex. |
| Beschreibung: | 1 online resource (xxiv, 418 pages) : illustrations |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9789812707598 981270759X |
Internformat
MARC
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| 100 | 1 | |a Galup-Montoro, Carlos. |0 http://id.loc.gov/authorities/names/no2007078691 | |
| 245 | 1 | 0 | |a MOSFET modeling for circuit analysis and design / |c Carlos Galup-Montoro, Márcio Cherem Schneider. |
| 260 | |a Singapore ; |a Hackensack, NJ : |b World Scientific, |c ©2007. | ||
| 300 | |a 1 online resource (xxiv, 418 pages) : |b illustrations | ||
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| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension. | |
| 520 | |a This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models. | |
| 650 | 0 | |a Field-effect transistors |x Mathematical models. | |
| 650 | 6 | |a Transistors MOSFET |x Modèles mathématiques. | |
| 650 | 6 | |a Transistors à effet de champ |x Modèles mathématiques. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Transistors. |2 bisacsh | |
| 650 | 7 | |a Field-effect transistors |x Mathematical models |2 fast | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models |2 fast | |
| 700 | 1 | |a Schneider, Márcio Cherem. |0 http://id.loc.gov/authorities/names/no2007078693 | |
| 758 | |i has work: |a MOSFET modeling for circuit analysis and design (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFXp4X8XB9RjVgcFxgWjQ3 |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
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Datensatz im Suchindex
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| _version_ | 1816881729746501632 |
| adam_text | |
| any_adam_object | |
| author | Galup-Montoro, Carlos |
| author2 | Schneider, Márcio Cherem |
| author2_role | |
| author2_variant | m c s mc mcs |
| author_GND | http://id.loc.gov/authorities/names/no2007078691 http://id.loc.gov/authorities/names/no2007078693 |
| author_facet | Galup-Montoro, Carlos Schneider, Márcio Cherem |
| author_role | |
| author_sort | Galup-Montoro, Carlos |
| author_variant | c g m cgm |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 G35 2007eb |
| callnumber-search | TK7871.99.M44 G35 2007eb |
| callnumber-sort | TK 47871.99 M44 G35 42007EB |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension. |
| ctrlnum | (OCoLC)648317008 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | ZDB-4-EBA-ocn648317008 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:17:21Z |
| institution | BVB |
| isbn | 9789812707598 981270759X |
| language | English |
| lccn | 2007298484 |
| oclc_num | 648317008 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xxiv, 418 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | World Scientific, |
| record_format | marc |
| series | International series on advances in solid state electronics and technology. |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Galup-Montoro, Carlos. http://id.loc.gov/authorities/names/no2007078691 MOSFET modeling for circuit analysis and design / Carlos Galup-Montoro, Márcio Cherem Schneider. Singapore ; Hackensack, NJ : World Scientific, ©2007. 1 online resource (xxiv, 418 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier data file rda International series on advances in solid state electronics and technology Includes bibliographical references and index. Print version record. Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension. This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex. Metal oxide semiconductor field-effect transistors Mathematical models. Field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. Transistors à effet de champ Modèles mathématiques. TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Field-effect transistors Mathematical models fast Metal oxide semiconductor field-effect transistors Mathematical models fast Schneider, Márcio Cherem. http://id.loc.gov/authorities/names/no2007078693 has work: MOSFET modeling for circuit analysis and design (Text) https://id.oclc.org/worldcat/entity/E39PCFXp4X8XB9RjVgcFxgWjQ3 https://id.oclc.org/worldcat/ontology/hasWork Print version: Galup-Montoro, Carlos. MOSFET modeling for circuit analysis and design. Singapore ; Hackensack, NJ : World Scientific, ©2007 9812568107 9789812568106 (DLC) 2007298484 (OCoLC)140548109 International series on advances in solid state electronics and technology. http://id.loc.gov/authorities/names/no95055036 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=203859 Volltext |
| spellingShingle | Galup-Montoro, Carlos MOSFET modeling for circuit analysis and design / International series on advances in solid state electronics and technology. Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension. Metal oxide semiconductor field-effect transistors Mathematical models. Field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. Transistors à effet de champ Modèles mathématiques. TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Field-effect transistors Mathematical models fast Metal oxide semiconductor field-effect transistors Mathematical models fast |
| title | MOSFET modeling for circuit analysis and design / |
| title_auth | MOSFET modeling for circuit analysis and design / |
| title_exact_search | MOSFET modeling for circuit analysis and design / |
| title_full | MOSFET modeling for circuit analysis and design / Carlos Galup-Montoro, Márcio Cherem Schneider. |
| title_fullStr | MOSFET modeling for circuit analysis and design / Carlos Galup-Montoro, Márcio Cherem Schneider. |
| title_full_unstemmed | MOSFET modeling for circuit analysis and design / Carlos Galup-Montoro, Márcio Cherem Schneider. |
| title_short | MOSFET modeling for circuit analysis and design / |
| title_sort | mosfet modeling for circuit analysis and design |
| topic | Metal oxide semiconductor field-effect transistors Mathematical models. Field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. Transistors à effet de champ Modèles mathématiques. TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Field-effect transistors Mathematical models fast Metal oxide semiconductor field-effect transistors Mathematical models fast |
| topic_facet | Metal oxide semiconductor field-effect transistors Mathematical models. Field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. Transistors à effet de champ Modèles mathématiques. TECHNOLOGY & ENGINEERING Electronics Transistors. Field-effect transistors Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=203859 |
| work_keys_str_mv | AT galupmontorocarlos mosfetmodelingforcircuitanalysisanddesign AT schneidermarciocherem mosfetmodelingforcircuitanalysisanddesign |