CMOS RF modeling, characterization and applications /:
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach ab...
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
River Edge, N.J. :
World Scientific,
©2002.
|
| Schriftenreihe: | Selected topics in electronics and systems ;
v. 24. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (global positioning system) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design. |
| Beschreibung: | 1 online resource (xi, 409 pages) : illustrations |
| Bibliographie: | Includes bibliographical references. |
| ISBN: | 9812777768 9789812777768 |
Internformat
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| 520 | |a CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (global positioning system) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design. | ||
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Datensatz im Suchindex
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| contents | RF MOS measurements / F. Sischka and T. Gneiting -- MOSFET modeling and parameter extraction for RF IC's / M. Je [and others] -- MOSFET modeling for RF IC design / Y. Cheng -- RF CMOS noise characterization and modeling / C.-H. Chen and M.J. Deen -- SOI CMOS transistors for RF and microwave applications / D. Flandre, J.-P. Raskin, and D. Vanhoenacker-Janvier -- RF CMOS reliability / S. Naseh and M.J. Deen. |
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| dewey-search | 621.39/732 |
| dewey-sort | 3621.39 3732 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | ZDB-4-EBA-ocn560447067 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:17:00Z |
| institution | BVB |
| isbn | 9812777768 9789812777768 |
| language | English |
| lccn | 2002283685 |
| oclc_num | 560447067 |
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| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xi, 409 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| publisher | World Scientific, |
| record_format | marc |
| series | Selected topics in electronics and systems ; |
| series2 | Selected topics in electronics and systems ; |
| spelling | CMOS RF modeling, characterization and applications / editors, M. Jamal Deen, Tor A. Fjeldly. River Edge, N.J. : World Scientific, ©2002. 1 online resource (xi, 409 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Selected topics in electronics and systems ; v. 24 Includes bibliographical references. Print version record. RF MOS measurements / F. Sischka and T. Gneiting -- MOSFET modeling and parameter extraction for RF IC's / M. Je [and others] -- MOSFET modeling for RF IC design / Y. Cheng -- RF CMOS noise characterization and modeling / C.-H. Chen and M.J. Deen -- SOI CMOS transistors for RF and microwave applications / D. Flandre, J.-P. Raskin, and D. Vanhoenacker-Janvier -- RF CMOS reliability / S. Naseh and M.J. Deen. CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (global positioning system) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design. English. Metal oxide semiconductors, Complementary. http://id.loc.gov/authorities/subjects/sh85084067 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 MOS complémentaires. Semi-conducteurs. semiconductor. aat COMPUTERS Machine Theory. bisacsh COMPUTERS Computer Engineering. bisacsh COMPUTERS Hardware General. bisacsh Metal oxide semiconductors, Complementary fast Semiconductors fast Deen, M. Jamal. http://id.loc.gov/authorities/names/n98002659 Fjeldly, Tor A. http://id.loc.gov/authorities/names/n96119555 Print version: CMOS RF modeling, characterization and applications. River Edge, NJ : World Scientific, ©2002 9810249055 9789810249052 (DLC) 2002283685 (OCoLC)50025753 Selected topics in electronics and systems ; v. 24. http://id.loc.gov/authorities/names/no95054495 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210645 Volltext |
| spellingShingle | CMOS RF modeling, characterization and applications / Selected topics in electronics and systems ; RF MOS measurements / F. Sischka and T. Gneiting -- MOSFET modeling and parameter extraction for RF IC's / M. Je [and others] -- MOSFET modeling for RF IC design / Y. Cheng -- RF CMOS noise characterization and modeling / C.-H. Chen and M.J. Deen -- SOI CMOS transistors for RF and microwave applications / D. Flandre, J.-P. Raskin, and D. Vanhoenacker-Janvier -- RF CMOS reliability / S. Naseh and M.J. Deen. Metal oxide semiconductors, Complementary. http://id.loc.gov/authorities/subjects/sh85084067 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 MOS complémentaires. Semi-conducteurs. semiconductor. aat COMPUTERS Machine Theory. bisacsh COMPUTERS Computer Engineering. bisacsh COMPUTERS Hardware General. bisacsh Metal oxide semiconductors, Complementary fast Semiconductors fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85084067 http://id.loc.gov/authorities/subjects/sh85119903 |
| title | CMOS RF modeling, characterization and applications / |
| title_auth | CMOS RF modeling, characterization and applications / |
| title_exact_search | CMOS RF modeling, characterization and applications / |
| title_full | CMOS RF modeling, characterization and applications / editors, M. Jamal Deen, Tor A. Fjeldly. |
| title_fullStr | CMOS RF modeling, characterization and applications / editors, M. Jamal Deen, Tor A. Fjeldly. |
| title_full_unstemmed | CMOS RF modeling, characterization and applications / editors, M. Jamal Deen, Tor A. Fjeldly. |
| title_short | CMOS RF modeling, characterization and applications / |
| title_sort | cmos rf modeling characterization and applications |
| topic | Metal oxide semiconductors, Complementary. http://id.loc.gov/authorities/subjects/sh85084067 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 MOS complémentaires. Semi-conducteurs. semiconductor. aat COMPUTERS Machine Theory. bisacsh COMPUTERS Computer Engineering. bisacsh COMPUTERS Hardware General. bisacsh Metal oxide semiconductors, Complementary fast Semiconductors fast |
| topic_facet | Metal oxide semiconductors, Complementary. Semiconductors. MOS complémentaires. Semi-conducteurs. semiconductor. COMPUTERS Machine Theory. COMPUTERS Computer Engineering. COMPUTERS Hardware General. Metal oxide semiconductors, Complementary Semiconductors |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210645 |
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