The physics and modeling of MOSFETS :: surface-potential model HiSIM /
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm M...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Singapore ; Hackensack, N.J. :
World Scientific Pub.,
©2008.
|
| Schriftenreihe: | International series on advances in solid state electronics and technology.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation. |
| Beschreibung: | Title from title screen. |
| Beschreibung: | 1 online resource (xxii, 352 pages) : illustrations. |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9812812059 9789812812056 1281960896 9781281960894 9786611960896 6611960899 |
Internformat
MARC
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| 100 | 1 | |a Miura-Mattausch, Mitiko, |d 1949- |1 https://id.oclc.org/worldcat/entity/E39PCjvFHj9F4rH6hwmXvP9Dmd |0 http://id.loc.gov/authorities/names/n88168924 | |
| 245 | 1 | 4 | |a The physics and modeling of MOSFETS : |b surface-potential model HiSIM / |c Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki. |
| 260 | |a Singapore ; |a Hackensack, N.J. : |b World Scientific Pub., |c ©2008. | ||
| 300 | |a 1 online resource (xxii, 352 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a International series on advances in solid state electronics and technology | |
| 500 | |a Title from title screen. | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a ""Contents""; ""Foreword""; ""Preface""; ""Definition of Symbols Used for Variables and Constants""; ""1. Semiconductor Device Physics""; ""1.1 Band Structure Concept""; ""1.1.1 Energy Bands and Quasi Particles""; ""1.1.2 Effective Mass Approximation""; ""1.2 Carrier Density and Fermi Level in Semiconductors""; ""1.2.1 Impurities in Semiconductors""; ""1.2.2 Impurity Levels""; ""1.2.3 Number of Carriers under Thermal Equilibrium""; ""1.2.3.1 Carrier Density in Pure Semiconductors""; ""1.2.3.2 Carrier Density in Impure or Doped Semiconductors""; ""1.2.4 Fermi Level""; ""1.3 P-N Junction"" | |
| 505 | 8 | |a ""1.3.1 P-N Junction in Thermal Equilibrium""""1.3.2 P-N Junction with External Voltages""; ""1.4 Device Simulation""; ""1.4.1 Basic Equations""; ""1.4.2 Linearization and Discretization of Poisson Equation""; ""1.4.3 Device Simulation of MOSFETs""; ""1.5 Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics""; ""Bibliography""; ""2. Basic Compact Surface-Potential Model of the MOSFET""; ""2.1 Compact Modeling Concept""; ""2.2 Device Structure Parameters of the MOSFET""; ""2.3 Surface Potentials""; ""2.4 Charge Densities""; ""2.5 Drain Current"" | |
| 505 | 8 | |a ""2.6 Summary of Equations and Model Parameters Presented in Chapter 2 for Basic Compact Surface-Potential Model of the MOSFET""""2.6.1 Section 2.2: Device Structure Parameters of the MOSFET""; ""2.6.2 Section 2.3: Surface Potentials""; ""2.6.3 Section 2.4: Charge Densities""; ""2.6.4 Section 2.5: Drain Current""; ""Bibliography""; ""3. Advanced MOSFET Phenomena Modeling""; ""3.1 Threshold Voltage Shift""; ""3.1.1 (I) Short-Channel Effects""; ""3.1.2 (II) Reverse-Short-Channel Effects""; ""3.2 Depletion Effect of the Poly-Si Gate""; ""3.3 Quantum-Mechanical Effects""; ""3.4 Mobility Model"" | |
| 505 | 8 | |a ""3.4.1 Low Field Mobility""""3.4.2 High Field Mobility""; ""3.5 Channel-Length Modulation""; ""3.6 Narrow-Channel Effects""; ""3.6.1 Threshold Voltage Shift""; ""3.6.2 Mobility Modification due to a Narrow Gate""; ""3.6.3 Leakage Current due to STI Technology""; ""3.6.4 Small-Geometry Effects""; ""3.7 Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies""; ""3.8 Temperature Dependences""; ""3.9 Conservation of Symmetry at Vds = 0""; ""3.10 Harmonic Distortions"" | |
| 505 | 8 | |a ""3.11 Summary of Equations and Model Parameters Appearing in Chapter 3 for Advanced MOSFET Phenomena Modeling""""3.11.1 Section 3.1: Threshold Voltage Shift""; ""3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon Gate""; ""3.11.3 Section 3.3: Quatum-Mechanical Effects""; ""3.11.4 Section 3.4: Mobility Model""; ""3.11.5 Section 3.5: Channel-Length Modulation""; ""3.11.6 Section 3.6: Narrow-Channel Effects""; ""3.11.7 Section 3.7: Effect of the Source/Drain Diffusion Length for Shallow-Trench Isolation (STI) Technologies""; ""3.11.8 Section 3.8: Temperature Dependences"" | |
| 520 | |a This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models. | |
| 650 | 6 | |a Transistors MOSFET |x Modèles mathématiques. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING. |2 bisac | |
| 650 | 7 | |a Electrical. |2 bisac | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Transistors. |2 bisacsh | |
| 650 | 7 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models |2 fast | |
| 650 | 7 | |a Electrical & Computer Engineering. |2 hilcc | |
| 650 | 7 | |a Engineering & Applied Sciences. |2 hilcc | |
| 650 | 7 | |a Electrical Engineering. |2 hilcc | |
| 700 | 1 | |a Mattausch, Hans Jürgen. |4 aut | |
| 700 | 1 | |a Ezaki, Tatsuya. |4 aut | |
| 758 | |i has work: |a The physics and modeling of MOSFETS (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFFDPxk7QRFTqc7DvFVdXq |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a Miura-Mattausch, Mitiko. |t Physics And Modeling Of Mosfets, The : Surface-Potential Model Hisim. |d Singapore : World Scientific & Imperial College Press, ©2008 |z 9789812568649 |
| 830 | 0 | |a International series on advances in solid state electronics and technology. |0 http://id.loc.gov/authorities/names/no95055036 | |
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| author | Miura-Mattausch, Mitiko, 1949- Mattausch, Hans Jürgen Ezaki, Tatsuya |
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| contents | ""Contents""; ""Foreword""; ""Preface""; ""Definition of Symbols Used for Variables and Constants""; ""1. Semiconductor Device Physics""; ""1.1 Band Structure Concept""; ""1.1.1 Energy Bands and Quasi Particles""; ""1.1.2 Effective Mass Approximation""; ""1.2 Carrier Density and Fermi Level in Semiconductors""; ""1.2.1 Impurities in Semiconductors""; ""1.2.2 Impurity Levels""; ""1.2.3 Number of Carriers under Thermal Equilibrium""; ""1.2.3.1 Carrier Density in Pure Semiconductors""; ""1.2.3.2 Carrier Density in Impure or Doped Semiconductors""; ""1.2.4 Fermi Level""; ""1.3 P-N Junction"" ""1.3.1 P-N Junction in Thermal Equilibrium""""1.3.2 P-N Junction with External Voltages""; ""1.4 Device Simulation""; ""1.4.1 Basic Equations""; ""1.4.2 Linearization and Discretization of Poisson Equation""; ""1.4.3 Device Simulation of MOSFETs""; ""1.5 Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics""; ""Bibliography""; ""2. Basic Compact Surface-Potential Model of the MOSFET""; ""2.1 Compact Modeling Concept""; ""2.2 Device Structure Parameters of the MOSFET""; ""2.3 Surface Potentials""; ""2.4 Charge Densities""; ""2.5 Drain Current"" ""2.6 Summary of Equations and Model Parameters Presented in Chapter 2 for Basic Compact Surface-Potential Model of the MOSFET""""2.6.1 Section 2.2: Device Structure Parameters of the MOSFET""; ""2.6.2 Section 2.3: Surface Potentials""; ""2.6.3 Section 2.4: Charge Densities""; ""2.6.4 Section 2.5: Drain Current""; ""Bibliography""; ""3. Advanced MOSFET Phenomena Modeling""; ""3.1 Threshold Voltage Shift""; ""3.1.1 (I) Short-Channel Effects""; ""3.1.2 (II) Reverse-Short-Channel Effects""; ""3.2 Depletion Effect of the Poly-Si Gate""; ""3.3 Quantum-Mechanical Effects""; ""3.4 Mobility Model"" ""3.4.1 Low Field Mobility""""3.4.2 High Field Mobility""; ""3.5 Channel-Length Modulation""; ""3.6 Narrow-Channel Effects""; ""3.6.1 Threshold Voltage Shift""; ""3.6.2 Mobility Modification due to a Narrow Gate""; ""3.6.3 Leakage Current due to STI Technology""; ""3.6.4 Small-Geometry Effects""; ""3.7 Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies""; ""3.8 Temperature Dependences""; ""3.9 Conservation of Symmetry at Vds = 0""; ""3.10 Harmonic Distortions"" ""3.11 Summary of Equations and Model Parameters Appearing in Chapter 3 for Advanced MOSFET Phenomena Modeling""""3.11.1 Section 3.1: Threshold Voltage Shift""; ""3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon Gate""; ""3.11.3 Section 3.3: Quatum-Mechanical Effects""; ""3.11.4 Section 3.4: Mobility Model""; ""3.11.5 Section 3.5: Channel-Length Modulation""; ""3.11.6 Section 3.6: Narrow-Channel Effects""; ""3.11.7 Section 3.7: Effect of the Source/Drain Diffusion Length for Shallow-Trench Isolation (STI) Technologies""; ""3.11.8 Section 3.8: Temperature Dependences"" |
| ctrlnum | (OCoLC)551762896 |
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| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.3815/284015118 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. 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| id | ZDB-4-EBA-ocn551762896 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:16:58Z |
| institution | BVB |
| isbn | 9812812059 9789812812056 1281960896 9781281960894 9786611960896 6611960899 |
| language | English |
| oclc_num | 551762896 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xxii, 352 pages) : illustrations. |
| psigel | ZDB-4-EBA |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | World Scientific Pub., |
| record_format | marc |
| series | International series on advances in solid state electronics and technology. |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Miura-Mattausch, Mitiko, 1949- https://id.oclc.org/worldcat/entity/E39PCjvFHj9F4rH6hwmXvP9Dmd http://id.loc.gov/authorities/names/n88168924 The physics and modeling of MOSFETS : surface-potential model HiSIM / Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki. Singapore ; Hackensack, N.J. : World Scientific Pub., ©2008. 1 online resource (xxii, 352 pages) : illustrations. text txt rdacontent computer c rdamedia online resource cr rdacarrier International series on advances in solid state electronics and technology Title from title screen. Includes bibliographical references and index. ""Contents""; ""Foreword""; ""Preface""; ""Definition of Symbols Used for Variables and Constants""; ""1. Semiconductor Device Physics""; ""1.1 Band Structure Concept""; ""1.1.1 Energy Bands and Quasi Particles""; ""1.1.2 Effective Mass Approximation""; ""1.2 Carrier Density and Fermi Level in Semiconductors""; ""1.2.1 Impurities in Semiconductors""; ""1.2.2 Impurity Levels""; ""1.2.3 Number of Carriers under Thermal Equilibrium""; ""1.2.3.1 Carrier Density in Pure Semiconductors""; ""1.2.3.2 Carrier Density in Impure or Doped Semiconductors""; ""1.2.4 Fermi Level""; ""1.3 P-N Junction"" ""1.3.1 P-N Junction in Thermal Equilibrium""""1.3.2 P-N Junction with External Voltages""; ""1.4 Device Simulation""; ""1.4.1 Basic Equations""; ""1.4.2 Linearization and Discretization of Poisson Equation""; ""1.4.3 Device Simulation of MOSFETs""; ""1.5 Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics""; ""Bibliography""; ""2. Basic Compact Surface-Potential Model of the MOSFET""; ""2.1 Compact Modeling Concept""; ""2.2 Device Structure Parameters of the MOSFET""; ""2.3 Surface Potentials""; ""2.4 Charge Densities""; ""2.5 Drain Current"" ""2.6 Summary of Equations and Model Parameters Presented in Chapter 2 for Basic Compact Surface-Potential Model of the MOSFET""""2.6.1 Section 2.2: Device Structure Parameters of the MOSFET""; ""2.6.2 Section 2.3: Surface Potentials""; ""2.6.3 Section 2.4: Charge Densities""; ""2.6.4 Section 2.5: Drain Current""; ""Bibliography""; ""3. Advanced MOSFET Phenomena Modeling""; ""3.1 Threshold Voltage Shift""; ""3.1.1 (I) Short-Channel Effects""; ""3.1.2 (II) Reverse-Short-Channel Effects""; ""3.2 Depletion Effect of the Poly-Si Gate""; ""3.3 Quantum-Mechanical Effects""; ""3.4 Mobility Model"" ""3.4.1 Low Field Mobility""""3.4.2 High Field Mobility""; ""3.5 Channel-Length Modulation""; ""3.6 Narrow-Channel Effects""; ""3.6.1 Threshold Voltage Shift""; ""3.6.2 Mobility Modification due to a Narrow Gate""; ""3.6.3 Leakage Current due to STI Technology""; ""3.6.4 Small-Geometry Effects""; ""3.7 Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies""; ""3.8 Temperature Dependences""; ""3.9 Conservation of Symmetry at Vds = 0""; ""3.10 Harmonic Distortions"" ""3.11 Summary of Equations and Model Parameters Appearing in Chapter 3 for Advanced MOSFET Phenomena Modeling""""3.11.1 Section 3.1: Threshold Voltage Shift""; ""3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon Gate""; ""3.11.3 Section 3.3: Quatum-Mechanical Effects""; ""3.11.4 Section 3.4: Mobility Model""; ""3.11.5 Section 3.5: Channel-Length Modulation""; ""3.11.6 Section 3.6: Narrow-Channel Effects""; ""3.11.7 Section 3.7: Effect of the Source/Drain Diffusion Length for Shallow-Trench Isolation (STI) Technologies""; ""3.11.8 Section 3.8: Temperature Dependences"" This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation. English. Metal oxide semiconductor field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. TECHNOLOGY & ENGINEERING. bisac Electrical. bisac TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Metal oxide semiconductor field-effect transistors Mathematical models fast Electrical & Computer Engineering. hilcc Engineering & Applied Sciences. hilcc Electrical Engineering. hilcc Mattausch, Hans Jürgen. aut Ezaki, Tatsuya. aut has work: The physics and modeling of MOSFETS (Text) https://id.oclc.org/worldcat/entity/E39PCFFDPxk7QRFTqc7DvFVdXq https://id.oclc.org/worldcat/ontology/hasWork Print version: Miura-Mattausch, Mitiko. Physics And Modeling Of Mosfets, The : Surface-Potential Model Hisim. Singapore : World Scientific & Imperial College Press, ©2008 9789812568649 International series on advances in solid state electronics and technology. http://id.loc.gov/authorities/names/no95055036 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=514830 Volltext |
| spellingShingle | Miura-Mattausch, Mitiko, 1949- Mattausch, Hans Jürgen Ezaki, Tatsuya The physics and modeling of MOSFETS : surface-potential model HiSIM / International series on advances in solid state electronics and technology. ""Contents""; ""Foreword""; ""Preface""; ""Definition of Symbols Used for Variables and Constants""; ""1. Semiconductor Device Physics""; ""1.1 Band Structure Concept""; ""1.1.1 Energy Bands and Quasi Particles""; ""1.1.2 Effective Mass Approximation""; ""1.2 Carrier Density and Fermi Level in Semiconductors""; ""1.2.1 Impurities in Semiconductors""; ""1.2.2 Impurity Levels""; ""1.2.3 Number of Carriers under Thermal Equilibrium""; ""1.2.3.1 Carrier Density in Pure Semiconductors""; ""1.2.3.2 Carrier Density in Impure or Doped Semiconductors""; ""1.2.4 Fermi Level""; ""1.3 P-N Junction"" ""1.3.1 P-N Junction in Thermal Equilibrium""""1.3.2 P-N Junction with External Voltages""; ""1.4 Device Simulation""; ""1.4.1 Basic Equations""; ""1.4.2 Linearization and Discretization of Poisson Equation""; ""1.4.3 Device Simulation of MOSFETs""; ""1.5 Summary of Equations and Symbols Presented in Chapter 1 for Semiconductor Device Physics""; ""Bibliography""; ""2. Basic Compact Surface-Potential Model of the MOSFET""; ""2.1 Compact Modeling Concept""; ""2.2 Device Structure Parameters of the MOSFET""; ""2.3 Surface Potentials""; ""2.4 Charge Densities""; ""2.5 Drain Current"" ""2.6 Summary of Equations and Model Parameters Presented in Chapter 2 for Basic Compact Surface-Potential Model of the MOSFET""""2.6.1 Section 2.2: Device Structure Parameters of the MOSFET""; ""2.6.2 Section 2.3: Surface Potentials""; ""2.6.3 Section 2.4: Charge Densities""; ""2.6.4 Section 2.5: Drain Current""; ""Bibliography""; ""3. Advanced MOSFET Phenomena Modeling""; ""3.1 Threshold Voltage Shift""; ""3.1.1 (I) Short-Channel Effects""; ""3.1.2 (II) Reverse-Short-Channel Effects""; ""3.2 Depletion Effect of the Poly-Si Gate""; ""3.3 Quantum-Mechanical Effects""; ""3.4 Mobility Model"" ""3.4.1 Low Field Mobility""""3.4.2 High Field Mobility""; ""3.5 Channel-Length Modulation""; ""3.6 Narrow-Channel Effects""; ""3.6.1 Threshold Voltage Shift""; ""3.6.2 Mobility Modification due to a Narrow Gate""; ""3.6.3 Leakage Current due to STI Technology""; ""3.6.4 Small-Geometry Effects""; ""3.7 Effects of the Length of the Diffused Source/Drain Contacts in Shallow-Trench Isolation (STI) Technologies""; ""3.8 Temperature Dependences""; ""3.9 Conservation of Symmetry at Vds = 0""; ""3.10 Harmonic Distortions"" ""3.11 Summary of Equations and Model Parameters Appearing in Chapter 3 for Advanced MOSFET Phenomena Modeling""""3.11.1 Section 3.1: Threshold Voltage Shift""; ""3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon Gate""; ""3.11.3 Section 3.3: Quatum-Mechanical Effects""; ""3.11.4 Section 3.4: Mobility Model""; ""3.11.5 Section 3.5: Channel-Length Modulation""; ""3.11.6 Section 3.6: Narrow-Channel Effects""; ""3.11.7 Section 3.7: Effect of the Source/Drain Diffusion Length for Shallow-Trench Isolation (STI) Technologies""; ""3.11.8 Section 3.8: Temperature Dependences"" Metal oxide semiconductor field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. TECHNOLOGY & ENGINEERING. bisac Electrical. bisac TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Metal oxide semiconductor field-effect transistors Mathematical models fast Electrical & Computer Engineering. hilcc Engineering & Applied Sciences. hilcc Electrical Engineering. hilcc |
| title | The physics and modeling of MOSFETS : surface-potential model HiSIM / |
| title_auth | The physics and modeling of MOSFETS : surface-potential model HiSIM / |
| title_exact_search | The physics and modeling of MOSFETS : surface-potential model HiSIM / |
| title_full | The physics and modeling of MOSFETS : surface-potential model HiSIM / Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki. |
| title_fullStr | The physics and modeling of MOSFETS : surface-potential model HiSIM / Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki. |
| title_full_unstemmed | The physics and modeling of MOSFETS : surface-potential model HiSIM / Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki. |
| title_short | The physics and modeling of MOSFETS : |
| title_sort | physics and modeling of mosfets surface potential model hisim |
| title_sub | surface-potential model HiSIM / |
| topic | Metal oxide semiconductor field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. TECHNOLOGY & ENGINEERING. bisac Electrical. bisac TECHNOLOGY & ENGINEERING Electronics Transistors. bisacsh Metal oxide semiconductor field-effect transistors Mathematical models fast Electrical & Computer Engineering. hilcc Engineering & Applied Sciences. hilcc Electrical Engineering. hilcc |
| topic_facet | Metal oxide semiconductor field-effect transistors Mathematical models. Transistors MOSFET Modèles mathématiques. TECHNOLOGY & ENGINEERING. Electrical. TECHNOLOGY & ENGINEERING Electronics Transistors. Metal oxide semiconductor field-effect transistors Mathematical models Electrical & Computer Engineering. Engineering & Applied Sciences. Electrical Engineering. |
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