III-nitride :: semiconductor materials /
III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This...
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Format: | Elektronisch E-Book |
Sprache: | English |
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London : Singapore ; Hackensack, NJ :
Imperial College Press ; Distributed by World Scientific,
©2006.
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Online-Zugang: | Volltext |
Zusammenfassung: | III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. |
Beschreibung: | 1 online resource (xii, 428 pages) : illustrations |
Bibliographie: | Includes bibliographical references. |
ISBN: | 1860946364 9781860946363 1860949037 9781860949036 1281867217 9781281867216 |
Internformat
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245 | 0 | 0 | |a III-nitride : |b semiconductor materials / |c editor, Zhe Chuan Feng. |
260 | |a London : |b Imperial College Press ; |a Singapore ; |a Hackensack, NJ : |b Distributed by World Scientific, |c ©2006. | ||
300 | |a 1 online resource (xii, 428 pages) : |b illustrations | ||
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504 | |a Includes bibliographical references. | ||
505 | 0 | |a Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides. | |
520 | |a III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. | ||
588 | 0 | |a Print version record. | |
650 | 0 | |a Semiconductors |x Materials. | |
650 | 0 | |a Nitrides. |0 http://id.loc.gov/authorities/subjects/sh85092049 | |
650 | 0 | |a Semiconductors. |0 http://id.loc.gov/authorities/subjects/sh85119903 | |
650 | 0 | |a Nitrides |x Electric properties. | |
650 | 0 | |a Electronics |x Materials. |0 http://id.loc.gov/authorities/subjects/sh85042388 | |
650 | 0 | |a Metal organic chemical vapor deposition. |0 http://id.loc.gov/authorities/subjects/sh00005424 | |
650 | 2 | |a Semiconductors |0 https://id.nlm.nih.gov/mesh/D012666 | |
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700 | 1 | |a Feng, Zhe Chuan. |0 http://id.loc.gov/authorities/names/n92046733 | |
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Datensatz im Suchindex
DE-BY-FWS_katkey | ZDB-4-EBA-ocn294847682 |
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adam_text | |
any_adam_object | |
author2 | Feng, Zhe Chuan |
author2_role | |
author2_variant | z c f zc zcf |
author_GND | http://id.loc.gov/authorities/names/n92046733 |
author_facet | Feng, Zhe Chuan |
author_sort | Feng, Zhe Chuan |
building | Verbundindex |
bvnumber | localFWS |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.15.N57 A1299 2006eb |
callnumber-search | TK7871.15.N57 A1299 2006eb |
callnumber-sort | TK 47871.15 N57 A1299 42006EB |
callnumber-subject | TK - Electrical and Nuclear Engineering |
collection | ZDB-4-EBA |
contents | Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides. |
ctrlnum | (OCoLC)294847682 |
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dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 541 - Physical chemistry |
dewey-raw | 541/.377 |
dewey-search | 541/.377 |
dewey-sort | 3541 3377 |
dewey-tens | 540 - Chemistry and allied sciences |
discipline | Chemie / Pharmazie |
format | Electronic eBook |
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:</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="347" ind1=" " ind2=" "><subfield code="a">data file</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. 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id | ZDB-4-EBA-ocn294847682 |
illustrated | Illustrated |
indexdate | 2024-11-27T13:16:37Z |
institution | BVB |
isbn | 1860946364 9781860946363 1860949037 9781860949036 1281867217 9781281867216 |
language | English |
oclc_num | 294847682 |
open_access_boolean | |
owner | MAIN DE-863 DE-BY-FWS |
owner_facet | MAIN DE-863 DE-BY-FWS |
physical | 1 online resource (xii, 428 pages) : illustrations |
psigel | ZDB-4-EBA |
publishDate | 2006 |
publishDateSearch | 2006 |
publishDateSort | 2006 |
publisher | Imperial College Press ; Distributed by World Scientific, |
record_format | marc |
spelling | III-nitride : semiconductor materials / editor, Zhe Chuan Feng. London : Imperial College Press ; Singapore ; Hackensack, NJ : Distributed by World Scientific, ©2006. 1 online resource (xii, 428 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier data file Includes bibliographical references. Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides. III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Print version record. Semiconductors Materials. Nitrides. http://id.loc.gov/authorities/subjects/sh85092049 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Nitrides Electric properties. Electronics Materials. http://id.loc.gov/authorities/subjects/sh85042388 Metal organic chemical vapor deposition. http://id.loc.gov/authorities/subjects/sh00005424 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. Nitrures Propriétés électriques. Électronique Matériaux. Dépôt en phase vapeur par organométalliques. Semi-conducteurs Matériaux. Nitrures. semiconductor. aat SCIENCE Chemistry Physical & Theoretical. bisacsh Semiconductors fast Metal organic chemical vapor deposition fast Electronics Materials fast Nitrides fast Semiconductors Materials fast Feng, Zhe Chuan. http://id.loc.gov/authorities/names/n92046733 has work: III-nitride (Text) https://id.oclc.org/worldcat/entity/E39PCFHm6CGMWqv6yx3YdfdvVy https://id.oclc.org/worldcat/ontology/hasWork III-nitride. London : Imperial College Press ; Singapore ; Hackensack, NJ : Distributed by World Scientific, ©2006 1860946364 (DLC) 2006299211 (OCoLC)70160598 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210705 Volltext |
spellingShingle | III-nitride : semiconductor materials / Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides. Semiconductors Materials. Nitrides. http://id.loc.gov/authorities/subjects/sh85092049 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Nitrides Electric properties. Electronics Materials. http://id.loc.gov/authorities/subjects/sh85042388 Metal organic chemical vapor deposition. http://id.loc.gov/authorities/subjects/sh00005424 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. Nitrures Propriétés électriques. Électronique Matériaux. Dépôt en phase vapeur par organométalliques. Semi-conducteurs Matériaux. Nitrures. semiconductor. aat SCIENCE Chemistry Physical & Theoretical. bisacsh Semiconductors fast Metal organic chemical vapor deposition fast Electronics Materials fast Nitrides fast Semiconductors Materials fast |
subject_GND | http://id.loc.gov/authorities/subjects/sh85092049 http://id.loc.gov/authorities/subjects/sh85119903 http://id.loc.gov/authorities/subjects/sh85042388 http://id.loc.gov/authorities/subjects/sh00005424 https://id.nlm.nih.gov/mesh/D012666 |
title | III-nitride : semiconductor materials / |
title_auth | III-nitride : semiconductor materials / |
title_exact_search | III-nitride : semiconductor materials / |
title_full | III-nitride : semiconductor materials / editor, Zhe Chuan Feng. |
title_fullStr | III-nitride : semiconductor materials / editor, Zhe Chuan Feng. |
title_full_unstemmed | III-nitride : semiconductor materials / editor, Zhe Chuan Feng. |
title_short | III-nitride : |
title_sort | iii nitride semiconductor materials |
title_sub | semiconductor materials / |
topic | Semiconductors Materials. Nitrides. http://id.loc.gov/authorities/subjects/sh85092049 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Nitrides Electric properties. Electronics Materials. http://id.loc.gov/authorities/subjects/sh85042388 Metal organic chemical vapor deposition. http://id.loc.gov/authorities/subjects/sh00005424 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. Nitrures Propriétés électriques. Électronique Matériaux. Dépôt en phase vapeur par organométalliques. Semi-conducteurs Matériaux. Nitrures. semiconductor. aat SCIENCE Chemistry Physical & Theoretical. bisacsh Semiconductors fast Metal organic chemical vapor deposition fast Electronics Materials fast Nitrides fast Semiconductors Materials fast |
topic_facet | Semiconductors Materials. Nitrides. Semiconductors. Nitrides Electric properties. Electronics Materials. Metal organic chemical vapor deposition. Semiconductors Semi-conducteurs. Nitrures Propriétés électriques. Électronique Matériaux. Dépôt en phase vapeur par organométalliques. Semi-conducteurs Matériaux. Nitrures. semiconductor. SCIENCE Chemistry Physical & Theoretical. Metal organic chemical vapor deposition Electronics Materials Nitrides Semiconductors Materials |
url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210705 |
work_keys_str_mv | AT fengzhechuan iiinitridesemiconductormaterials |