Breakdown phenomena in semiconductors and semiconductor devices /:
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to pr...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Weitere Verfasser: | , |
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey ; London :
World Scientific,
©2005.
|
| Schriftenreihe: | Selected topics in electronics and systems ;
v. 36. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi. |
| Beschreibung: | 1 online resource (xiii, 208 pages) : illustrations |
| Bibliographie: | Includes bibliographical references and indexes. |
| ISBN: | 9812563954 9789812563958 9812703330 9789812703330 1281372927 9781281372925 9786611372927 661137292X |
Internformat
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | ZDB-4-EBA-ocn191818482 | ||
| 003 | OCoLC | ||
| 005 | 20241004212047.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 051121s2005 njua ob 001 0 eng d | ||
| 040 | |a COCUF |b eng |e pn |c COCUF |d OCLCG |d OCLCQ |d QE2 |d N$T |d YDXCP |d IDEBK |d OCLCQ |d MERUC |d CCO |d E7B |d OCLCQ |d FVL |d B24X7 |d OCLCQ |d OCLCO |d OCLCQ |d OCLCF |d OCLCQ |d AZK |d JBG |d LOA |d COCUF |d AGLDB |d MOR |d PIFBR |d OTZ |d OCLCQ |d STF |d WRM |d VTS |d INT |d VT2 |d OCLCQ |d COO |d WYU |d TKN |d OCLCQ |d M8D |d UKAHL |d UKCRE |d VLY |d OCLCQ |d OCLCO |d MHW |d OCLCO |d OCLCQ |d OCLCO |d OCLCL |d OCLCQ | ||
| 015 | |a GBA600293 |2 bnb | ||
| 016 | 7 | |a 013341171 |2 Uk | |
| 019 | |a 77721200 |a 144224608 |a 455949354 |a 560338215 |a 648234363 |a 722568924 |a 728037836 |a 888794544 |a 961522507 |a 962667511 |a 966169391 |a 988438093 |a 992014744 |a 994955476 |a 1037745071 |a 1038684520 |a 1055354068 |a 1062914004 |a 1064143013 |a 1081236993 |a 1153463540 |a 1162510899 |a 1228589609 |a 1241856024 |a 1290042561 |a 1300685759 | ||
| 020 | |a 9812563954 | ||
| 020 | |a 9789812563958 | ||
| 020 | |a 9812703330 |q (electronic bk.) | ||
| 020 | |a 9789812703330 |q (electronic bk.) | ||
| 020 | |a 1281372927 | ||
| 020 | |a 9781281372925 | ||
| 020 | |a 9786611372927 | ||
| 020 | |a 661137292X | ||
| 035 | |a (OCoLC)191818482 |z (OCoLC)77721200 |z (OCoLC)144224608 |z (OCoLC)455949354 |z (OCoLC)560338215 |z (OCoLC)648234363 |z (OCoLC)722568924 |z (OCoLC)728037836 |z (OCoLC)888794544 |z (OCoLC)961522507 |z (OCoLC)962667511 |z (OCoLC)966169391 |z (OCoLC)988438093 |z (OCoLC)992014744 |z (OCoLC)994955476 |z (OCoLC)1037745071 |z (OCoLC)1038684520 |z (OCoLC)1055354068 |z (OCoLC)1062914004 |z (OCoLC)1064143013 |z (OCoLC)1081236993 |z (OCoLC)1153463540 |z (OCoLC)1162510899 |z (OCoLC)1228589609 |z (OCoLC)1241856024 |z (OCoLC)1290042561 |z (OCoLC)1300685759 | ||
| 050 | 4 | |a TK7871.85 |b .L48 2005eb | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 082 | 7 | |a 621.38152 |2 22 | |
| 049 | |a MAIN | ||
| 100 | 1 | |a Levinshteĭn, M. E. |q (Mikhail Efimovich) |1 https://id.oclc.org/worldcat/entity/E39PCjMy3FCp3JF9GhHYbpFbBd |0 http://id.loc.gov/authorities/names/n90696730 | |
| 245 | 1 | 0 | |a Breakdown phenomena in semiconductors and semiconductor devices / |c Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein. |
| 260 | |a New Jersey ; |a London : |b World Scientific, |c ©2005. | ||
| 300 | |a 1 online resource (xiii, 208 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 347 | |a data file | ||
| 490 | 1 | |a Selected topics in electronics and systems ; |v v. 36 | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX. | |
| 520 | |a Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors. |0 http://id.loc.gov/authorities/subjects/sh85119903 | |
| 650 | 0 | |a Breakdown (Electricity) |0 http://id.loc.gov/authorities/subjects/sh85016670 | |
| 650 | 0 | |a High voltages. |0 http://id.loc.gov/authorities/subjects/sh85060753 | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 6 | |a Rupture diélectrique. | |
| 650 | 6 | |a Haute tension. | |
| 650 | 7 | |a semiconductor. |2 aat | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Breakdown (Electricity) |2 fast | |
| 650 | 7 | |a High voltages |2 fast | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 700 | 1 | |a Kostamovaara, Juha. | |
| 700 | 1 | |a Vainshtein, Sergey. | |
| 776 | 0 | 8 | |i Print version: |a Levinshteĭn, M.E. (Mikhail Efimovich). |t Breakdown phenomena in semiconductors and semiconductor devices. |d New Jersey ; London : World Scientific, ©2005 |z 9812563954 |w (DLC) 2006273468 |w (OCoLC)62473250 |
| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 36. |0 http://id.loc.gov/authorities/names/no95054495 | |
| 856 | 4 | 0 | |l FWS01 |p ZDB-4-EBA |q FWS_PDA_EBA |u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=174564 |3 Volltext |
| 936 | |a BATCHLOAD | ||
| 938 | |a Askews and Holts Library Services |b ASKH |n AH24683978 | ||
| 938 | |a Books 24x7 |b B247 |n bke00018661 | ||
| 938 | |a ebrary |b EBRY |n ebr10174085 | ||
| 938 | |a EBSCOhost |b EBSC |n 174564 | ||
| 938 | |a YBP Library Services |b YANK |n 2507585 | ||
| 994 | |a 92 |b GEBAY | ||
| 912 | |a ZDB-4-EBA | ||
| 049 | |a DE-863 | ||
Datensatz im Suchindex
| DE-BY-FWS_katkey | ZDB-4-EBA-ocn191818482 |
|---|---|
| _version_ | 1816881660558311424 |
| adam_text | |
| any_adam_object | |
| author | Levinshteĭn, M. E. (Mikhail Efimovich) |
| author2 | Kostamovaara, Juha Vainshtein, Sergey |
| author2_role | |
| author2_variant | j k jk s v sv |
| author_GND | http://id.loc.gov/authorities/names/n90696730 |
| author_facet | Levinshteĭn, M. E. (Mikhail Efimovich) Kostamovaara, Juha Vainshtein, Sergey |
| author_role | |
| author_sort | Levinshteĭn, M. E. |
| author_variant | m e l me mel |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 .L48 2005eb |
| callnumber-search | TK7871.85 .L48 2005eb |
| callnumber-sort | TK 47871.85 L48 42005EB |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX. |
| ctrlnum | (OCoLC)191818482 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>05032cam a2200769 a 4500</leader><controlfield tag="001">ZDB-4-EBA-ocn191818482</controlfield><controlfield tag="003">OCoLC</controlfield><controlfield tag="005">20241004212047.0</controlfield><controlfield tag="006">m o d </controlfield><controlfield tag="007">cr cn|||||||||</controlfield><controlfield tag="008">051121s2005 njua ob 001 0 eng d</controlfield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">COCUF</subfield><subfield code="b">eng</subfield><subfield code="e">pn</subfield><subfield code="c">COCUF</subfield><subfield code="d">OCLCG</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">QE2</subfield><subfield code="d">N$T</subfield><subfield code="d">YDXCP</subfield><subfield code="d">IDEBK</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">MERUC</subfield><subfield code="d">CCO</subfield><subfield code="d">E7B</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">FVL</subfield><subfield code="d">B24X7</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCF</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">AZK</subfield><subfield code="d">JBG</subfield><subfield code="d">LOA</subfield><subfield code="d">COCUF</subfield><subfield code="d">AGLDB</subfield><subfield code="d">MOR</subfield><subfield code="d">PIFBR</subfield><subfield code="d">OTZ</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">STF</subfield><subfield code="d">WRM</subfield><subfield code="d">VTS</subfield><subfield code="d">INT</subfield><subfield code="d">VT2</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">COO</subfield><subfield code="d">WYU</subfield><subfield code="d">TKN</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">M8D</subfield><subfield code="d">UKAHL</subfield><subfield code="d">UKCRE</subfield><subfield code="d">VLY</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">MHW</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCQ</subfield><subfield code="d">OCLCO</subfield><subfield code="d">OCLCL</subfield><subfield code="d">OCLCQ</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">GBA600293</subfield><subfield code="2">bnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">013341171</subfield><subfield code="2">Uk</subfield></datafield><datafield tag="019" ind1=" " ind2=" "><subfield code="a">77721200</subfield><subfield code="a">144224608</subfield><subfield code="a">455949354</subfield><subfield code="a">560338215</subfield><subfield code="a">648234363</subfield><subfield code="a">722568924</subfield><subfield code="a">728037836</subfield><subfield code="a">888794544</subfield><subfield code="a">961522507</subfield><subfield code="a">962667511</subfield><subfield code="a">966169391</subfield><subfield code="a">988438093</subfield><subfield code="a">992014744</subfield><subfield code="a">994955476</subfield><subfield code="a">1037745071</subfield><subfield code="a">1038684520</subfield><subfield code="a">1055354068</subfield><subfield code="a">1062914004</subfield><subfield code="a">1064143013</subfield><subfield code="a">1081236993</subfield><subfield code="a">1153463540</subfield><subfield code="a">1162510899</subfield><subfield code="a">1228589609</subfield><subfield code="a">1241856024</subfield><subfield code="a">1290042561</subfield><subfield code="a">1300685759</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812563954</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812563958</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812703330</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812703330</subfield><subfield code="q">(electronic bk.)</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1281372927</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781281372925</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9786611372927</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">661137292X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)191818482</subfield><subfield code="z">(OCoLC)77721200</subfield><subfield code="z">(OCoLC)144224608</subfield><subfield code="z">(OCoLC)455949354</subfield><subfield code="z">(OCoLC)560338215</subfield><subfield code="z">(OCoLC)648234363</subfield><subfield code="z">(OCoLC)722568924</subfield><subfield code="z">(OCoLC)728037836</subfield><subfield code="z">(OCoLC)888794544</subfield><subfield code="z">(OCoLC)961522507</subfield><subfield code="z">(OCoLC)962667511</subfield><subfield code="z">(OCoLC)966169391</subfield><subfield code="z">(OCoLC)988438093</subfield><subfield code="z">(OCoLC)992014744</subfield><subfield code="z">(OCoLC)994955476</subfield><subfield code="z">(OCoLC)1037745071</subfield><subfield code="z">(OCoLC)1038684520</subfield><subfield code="z">(OCoLC)1055354068</subfield><subfield code="z">(OCoLC)1062914004</subfield><subfield code="z">(OCoLC)1064143013</subfield><subfield code="z">(OCoLC)1081236993</subfield><subfield code="z">(OCoLC)1153463540</subfield><subfield code="z">(OCoLC)1162510899</subfield><subfield code="z">(OCoLC)1228589609</subfield><subfield code="z">(OCoLC)1241856024</subfield><subfield code="z">(OCoLC)1290042561</subfield><subfield code="z">(OCoLC)1300685759</subfield></datafield><datafield tag="050" ind1=" " ind2="4"><subfield code="a">TK7871.85</subfield><subfield code="b">.L48 2005eb</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">008100</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="072" ind1=" " ind2="7"><subfield code="a">TEC</subfield><subfield code="x">008090</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="082" ind1="7" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">MAIN</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Levinshteĭn, M. E.</subfield><subfield code="q">(Mikhail Efimovich)</subfield><subfield code="1">https://id.oclc.org/worldcat/entity/E39PCjMy3FCp3JF9GhHYbpFbBd</subfield><subfield code="0">http://id.loc.gov/authorities/names/n90696730</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Breakdown phenomena in semiconductors and semiconductor devices /</subfield><subfield code="c">Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein.</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="a">New Jersey ;</subfield><subfield code="a">London :</subfield><subfield code="b">World Scientific,</subfield><subfield code="c">©2005.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (xiii, 208 pages) :</subfield><subfield code="b">illustrations</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="347" ind1=" " ind2=" "><subfield code="a">data file</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected topics in electronics and systems ;</subfield><subfield code="v">v. 36</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and indexes.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi.</subfield></datafield><datafield tag="546" ind1=" " ind2=" "><subfield code="a">English.</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Semiconductors.</subfield><subfield code="0">http://id.loc.gov/authorities/subjects/sh85119903</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">Breakdown (Electricity)</subfield><subfield code="0">http://id.loc.gov/authorities/subjects/sh85016670</subfield></datafield><datafield tag="650" ind1=" " ind2="0"><subfield code="a">High voltages.</subfield><subfield code="0">http://id.loc.gov/authorities/subjects/sh85060753</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Semi-conducteurs.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Rupture diélectrique.</subfield></datafield><datafield tag="650" ind1=" " ind2="6"><subfield code="a">Haute tension.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">semiconductor.</subfield><subfield code="2">aat</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Electronics</subfield><subfield code="x">Solid State.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING</subfield><subfield code="x">Electronics</subfield><subfield code="x">Semiconductors.</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Breakdown (Electricity)</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">High voltages</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kostamovaara, Juha.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vainshtein, Sergey.</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Print version:</subfield><subfield code="a">Levinshteĭn, M.E. (Mikhail Efimovich).</subfield><subfield code="t">Breakdown phenomena in semiconductors and semiconductor devices.</subfield><subfield code="d">New Jersey ; London : World Scientific, ©2005</subfield><subfield code="z">9812563954</subfield><subfield code="w">(DLC) 2006273468</subfield><subfield code="w">(OCoLC)62473250</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Selected topics in electronics and systems ;</subfield><subfield code="v">v. 36.</subfield><subfield code="0">http://id.loc.gov/authorities/names/no95054495</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="l">FWS01</subfield><subfield code="p">ZDB-4-EBA</subfield><subfield code="q">FWS_PDA_EBA</subfield><subfield code="u">https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=174564</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="936" ind1=" " ind2=" "><subfield code="a">BATCHLOAD</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">Askews and Holts Library Services</subfield><subfield code="b">ASKH</subfield><subfield code="n">AH24683978</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">Books 24x7</subfield><subfield code="b">B247</subfield><subfield code="n">bke00018661</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">ebrary</subfield><subfield code="b">EBRY</subfield><subfield code="n">ebr10174085</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">EBSCOhost</subfield><subfield code="b">EBSC</subfield><subfield code="n">174564</subfield></datafield><datafield tag="938" ind1=" " ind2=" "><subfield code="a">YBP Library Services</subfield><subfield code="b">YANK</subfield><subfield code="n">2507585</subfield></datafield><datafield tag="994" ind1=" " ind2=" "><subfield code="a">92</subfield><subfield code="b">GEBAY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-4-EBA</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-863</subfield></datafield></record></collection> |
| id | ZDB-4-EBA-ocn191818482 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:16:15Z |
| institution | BVB |
| isbn | 9812563954 9789812563958 9812703330 9789812703330 1281372927 9781281372925 9786611372927 661137292X |
| language | English |
| oclc_num | 191818482 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xiii, 208 pages) : illustrations |
| psigel | ZDB-4-EBA |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | World Scientific, |
| record_format | marc |
| series | Selected topics in electronics and systems ; |
| series2 | Selected topics in electronics and systems ; |
| spelling | Levinshteĭn, M. E. (Mikhail Efimovich) https://id.oclc.org/worldcat/entity/E39PCjMy3FCp3JF9GhHYbpFbBd http://id.loc.gov/authorities/names/n90696730 Breakdown phenomena in semiconductors and semiconductor devices / Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein. New Jersey ; London : World Scientific, ©2005. 1 online resource (xiii, 208 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier data file Selected topics in electronics and systems ; v. 36 Includes bibliographical references and indexes. Print version record. Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX. Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experi. English. Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Breakdown (Electricity) http://id.loc.gov/authorities/subjects/sh85016670 High voltages. http://id.loc.gov/authorities/subjects/sh85060753 Semi-conducteurs. Rupture diélectrique. Haute tension. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast Kostamovaara, Juha. Vainshtein, Sergey. Print version: Levinshteĭn, M.E. (Mikhail Efimovich). Breakdown phenomena in semiconductors and semiconductor devices. New Jersey ; London : World Scientific, ©2005 9812563954 (DLC) 2006273468 (OCoLC)62473250 Selected topics in electronics and systems ; v. 36. http://id.loc.gov/authorities/names/no95054495 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=174564 Volltext |
| spellingShingle | Levinshteĭn, M. E. (Mikhail Efimovich) Breakdown phenomena in semiconductors and semiconductor devices / Selected topics in electronics and systems ; Preface; Contents; Chapter 1 Introductory Chapter; Chapter 2 Avalanche Multiplication; Chapter 3 Static Avalanche Breakdown; Chapter 4 Avalanche Injection; Chapter 5 Dynamic Breakdown; Conclusion; List of Symbols; Bibliography; Index; AUTHOR INDEX. Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Breakdown (Electricity) http://id.loc.gov/authorities/subjects/sh85016670 High voltages. http://id.loc.gov/authorities/subjects/sh85060753 Semi-conducteurs. Rupture diélectrique. Haute tension. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85119903 http://id.loc.gov/authorities/subjects/sh85016670 http://id.loc.gov/authorities/subjects/sh85060753 |
| title | Breakdown phenomena in semiconductors and semiconductor devices / |
| title_auth | Breakdown phenomena in semiconductors and semiconductor devices / |
| title_exact_search | Breakdown phenomena in semiconductors and semiconductor devices / |
| title_full | Breakdown phenomena in semiconductors and semiconductor devices / Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein. |
| title_fullStr | Breakdown phenomena in semiconductors and semiconductor devices / Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein. |
| title_full_unstemmed | Breakdown phenomena in semiconductors and semiconductor devices / Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein. |
| title_short | Breakdown phenomena in semiconductors and semiconductor devices / |
| title_sort | breakdown phenomena in semiconductors and semiconductor devices |
| topic | Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Breakdown (Electricity) http://id.loc.gov/authorities/subjects/sh85016670 High voltages. http://id.loc.gov/authorities/subjects/sh85060753 Semi-conducteurs. Rupture diélectrique. Haute tension. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Breakdown (Electricity) fast High voltages fast Semiconductors fast |
| topic_facet | Semiconductors. Breakdown (Electricity) High voltages. Semi-conducteurs. Rupture diélectrique. Haute tension. semiconductor. TECHNOLOGY & ENGINEERING Electronics Solid State. TECHNOLOGY & ENGINEERING Electronics Semiconductors. High voltages Semiconductors |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=174564 |
| work_keys_str_mv | AT levinshteinme breakdownphenomenainsemiconductorsandsemiconductordevices AT kostamovaarajuha breakdownphenomenainsemiconductorsandsemiconductordevices AT vainshteinsergey breakdownphenomenainsemiconductorsandsemiconductordevices |