SiC materials and devices.: Volume 1 /
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up...
Gespeichert in:
| Weitere Verfasser: | , , |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New Jersey ; London :
World Scientific,
©2006.
|
| Schriftenreihe: | Selected topics in electronics and systems ;
v. 40. |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi. |
| Beschreibung: | Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner. |
| Beschreibung: | 1 online resource (v, 1033 pages) : illustrations |
| Bibliographie: | Includes bibliographical references. |
| ISBN: | 9789812773371 9812773371 |
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| 504 | |a Includes bibliographical references. | ||
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| 505 | 0 | |a Preface; CONTENTS; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime; 9 Properties of SiC/SiO2 Interfaces; Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts; 3 Specific Contact Resistance; 4 Ohmic Contacts to n-type SiC. | |
| 505 | 8 | |a 5 Ohmic Contacts to p-type SiC6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 7 New Trends in Ohmic Contacts for Practical Devices; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode; 1 Introduction; 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction; 2 PiN Rectifier Design and Operation; 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions. | |
| 505 | 8 | |a AcknowledgementsReferences; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors; 3 Silicon Carbide Varactors; 4 Silicon carbide Schotty barrier mixer diodes; 5 Silicon carbide p-i-n diode; 6 Silicon carbide IMPATT diode; 7 Conclusions; 8 Acknowledgments; 9 References; SiC Thyristors; 1 Introduction; 2 Turn-on process in the thyristors; 3 Steady-state current-voltage characteristics; 4 Turn-off performance; 5 Frequency properties; 6 Critical charge; 7 Conclusion; Acknowledgments; References; Silicon Carbide Static Induction Transistors. | |
| 505 | 8 | |a 1 Introduction and History of the Static Induction Transistor2 Static Induction Transistor Device Structures; 3 Current-Voltage Characteristics of the Static Induction Transistor; 4 Static Induction Transistor Applications; 5 Summary; 6 Acknowledgements; 7 References. | |
| 520 | |a After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi. | ||
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| contents | Preface; CONTENTS; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime; 9 Properties of SiC/SiO2 Interfaces; Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts; 3 Specific Contact Resistance; 4 Ohmic Contacts to n-type SiC. 5 Ohmic Contacts to p-type SiC6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 7 New Trends in Ohmic Contacts for Practical Devices; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode; 1 Introduction; 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction; 2 PiN Rectifier Design and Operation; 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions. AcknowledgementsReferences; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors; 3 Silicon Carbide Varactors; 4 Silicon carbide Schotty barrier mixer diodes; 5 Silicon carbide p-i-n diode; 6 Silicon carbide IMPATT diode; 7 Conclusions; 8 Acknowledgments; 9 References; SiC Thyristors; 1 Introduction; 2 Turn-on process in the thyristors; 3 Steady-state current-voltage characteristics; 4 Turn-off performance; 5 Frequency properties; 6 Critical charge; 7 Conclusion; Acknowledgments; References; Silicon Carbide Static Induction Transistors. 1 Introduction and History of the Static Induction Transistor2 Static Induction Transistor Device Structures; 3 Current-Voltage Characteristics of the Static Induction Transistor; 4 Static Induction Transistor Applications; 5 Summary; 6 Acknowledgements; 7 References. |
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| series | Selected topics in electronics and systems ; |
| series2 | Selected topics in electronics and systems ; |
| spelling | SiC materials and devices. Volume 1 / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein. New Jersey ; London : World Scientific, ©2006. 1 online resource (v, 1033 pages) : illustrations text txt rdacontent computer c rdamedia online resource cr rdacarrier Selected topics in electronics and systems ; v. 40 Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner. Includes bibliographical references. Print version record. Preface; CONTENTS; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime; 9 Properties of SiC/SiO2 Interfaces; Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts; 3 Specific Contact Resistance; 4 Ohmic Contacts to n-type SiC. 5 Ohmic Contacts to p-type SiC6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 7 New Trends in Ohmic Contacts for Practical Devices; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode; 1 Introduction; 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction; 2 PiN Rectifier Design and Operation; 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions. AcknowledgementsReferences; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors; 3 Silicon Carbide Varactors; 4 Silicon carbide Schotty barrier mixer diodes; 5 Silicon carbide p-i-n diode; 6 Silicon carbide IMPATT diode; 7 Conclusions; 8 Acknowledgments; 9 References; SiC Thyristors; 1 Introduction; 2 Turn-on process in the thyristors; 3 Steady-state current-voltage characteristics; 4 Turn-off performance; 5 Frequency properties; 6 Critical charge; 7 Conclusion; Acknowledgments; References; Silicon Carbide Static Induction Transistors. 1 Introduction and History of the Static Induction Transistor2 Static Induction Transistor Device Structures; 3 Current-Voltage Characteristics of the Static Induction Transistor; 4 Static Induction Transistor Applications; 5 Summary; 6 Acknowledgements; 7 References. After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wi. Silicon carbide Electric properties. http://id.loc.gov/authorities/subjects/sh85122520 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Semiconductors fast Silicon carbide Electric properties fast Shur, Michael. Rumyantsev, Sergey L. https://id.oclc.org/worldcat/entity/E39PCjDJ9wFYHcVBrjdxrm6Bj3 http://id.loc.gov/authorities/names/n00012327 Levinshteĭn, M. E. (Mikhail Efimovich) https://id.oclc.org/worldcat/entity/E39PCjMy3FCp3JF9GhHYbpFbBd http://id.loc.gov/authorities/names/n90696730 Journal of high speed electronics & systems. has work: Volume 1 SiC materials and devices (Text) https://id.oclc.org/worldcat/entity/E39PCGdPjmhMpwMbvKbDCWrC33 https://id.oclc.org/worldcat/ontology/hasWork Print version: SiC materials and devices. Volume 1. New Jersey ; London : World Scientific, ©2006 9812568352 9789812568359 (DLC) 2007272569 (OCoLC)71298024 Selected topics in electronics and systems ; v. 40. http://id.loc.gov/authorities/names/no95054495 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210570 Volltext |
| spellingShingle | SiC materials and devices. Selected topics in electronics and systems ; Preface; CONTENTS; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime; 9 Properties of SiC/SiO2 Interfaces; Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts; 3 Specific Contact Resistance; 4 Ohmic Contacts to n-type SiC. 5 Ohmic Contacts to p-type SiC6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 7 New Trends in Ohmic Contacts for Practical Devices; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode; 1 Introduction; 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction; 2 PiN Rectifier Design and Operation; 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions. AcknowledgementsReferences; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors; 3 Silicon Carbide Varactors; 4 Silicon carbide Schotty barrier mixer diodes; 5 Silicon carbide p-i-n diode; 6 Silicon carbide IMPATT diode; 7 Conclusions; 8 Acknowledgments; 9 References; SiC Thyristors; 1 Introduction; 2 Turn-on process in the thyristors; 3 Steady-state current-voltage characteristics; 4 Turn-off performance; 5 Frequency properties; 6 Critical charge; 7 Conclusion; Acknowledgments; References; Silicon Carbide Static Induction Transistors. 1 Introduction and History of the Static Induction Transistor2 Static Induction Transistor Device Structures; 3 Current-Voltage Characteristics of the Static Induction Transistor; 4 Static Induction Transistor Applications; 5 Summary; 6 Acknowledgements; 7 References. Silicon carbide Electric properties. http://id.loc.gov/authorities/subjects/sh85122520 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Semiconductors fast Silicon carbide Electric properties fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85122520 http://id.loc.gov/authorities/subjects/sh85119903 https://id.nlm.nih.gov/mesh/D012666 |
| title | SiC materials and devices. |
| title_alt | Journal of high speed electronics & systems. |
| title_auth | SiC materials and devices. |
| title_exact_search | SiC materials and devices. |
| title_full | SiC materials and devices. Volume 1 / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein. |
| title_fullStr | SiC materials and devices. Volume 1 / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein. |
| title_full_unstemmed | SiC materials and devices. Volume 1 / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein. |
| title_short | SiC materials and devices. |
| title_sort | sic materials and devices |
| topic | Silicon carbide Electric properties. http://id.loc.gov/authorities/subjects/sh85122520 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Semiconductors fast Silicon carbide Electric properties fast |
| topic_facet | Silicon carbide Electric properties. Semiconductors. Semiconductors Semi-conducteurs. semiconductor. TECHNOLOGY & ENGINEERING Electronics Solid State. TECHNOLOGY & ENGINEERING Electronics Semiconductors. Silicon carbide Electric properties |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=210570 |
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