Rapid thermal processing for future semiconductor devices :: proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 /
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokk...
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| Format: | Electronic Conference Proceeding eBook |
| Language: | English |
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Amsterdam ; London :
Elsevier,
2003.
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| Online Access: | DE-862 DE-863 DE-862 DE-863 |
| Summary: | This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies. |
| Physical Description: | 1 online resource (x, 150 pages :) |
| Bibliography: | Includes bibliographical references. |
| ISBN: | 9780444513397 0444513396 9780080540269 0080540260 |
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| 520 | |a This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies. | ||
| 588 | 0 | |a Print version record. | |
| 504 | |a Includes bibliographical references. | ||
| 505 | 0 | |a Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page. | |
| 650 | 0 | |a Semiconductors |x Heat treatment |v Congresses. | |
| 650 | 0 | |a Rapid thermal processing |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |x Traitement thermique |v Congrès. | |
| 650 | 6 | |a Recuit thermique rapide |v Congrès. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
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| 758 | |i has work: |a Rapid thermal processing for future semiconductor devices (Text) |1 https://id.oclc.org/worldcat/entity/E39PCFDyVKbgdv4RMJyc4MYkQm |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
| 776 | 0 | 8 | |i Print version: |a International Conference on Rapid Thermal Processing for Future Semiconductor Devices (2nd : 2001 : Ise-Shima, Mie, Japan). |t Rapid thermal processing for future semiconductor devices. |d Amsterdam ; London : Elsevier, 2003 |z 0444513396 |z 9780444513397 |w (DLC) 2003271753 |w (OCoLC)51668070 |
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| contents | Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page. |
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This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. 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| genre | proceedings (reports) aat Conference papers and proceedings fast Conference papers and proceedings. lcgft http://id.loc.gov/authorities/genreForms/gf2014026068 Actes de congrès. rvmgf |
| genre_facet | proceedings (reports) Conference papers and proceedings Conference papers and proceedings. Actes de congrès. |
| id | ZDB-4-EBA-ocn162131007 |
| illustrated | Illustrated |
| indexdate | 2025-03-18T14:14:18Z |
| institution | BVB |
| isbn | 9780444513397 0444513396 9780080540269 0080540260 |
| language | English |
| oclc_num | 162131007 |
| open_access_boolean | |
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| physical | 1 online resource (x, 150 pages :) |
| psigel | ZDB-4-EBA FWS_PDA_EBA ZDB-4-EBA |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Elsevier, |
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| spelling | International Conference on Rapid Thermal Processing for Future Semiconductor Devices (2nd : 2001 : Ise-Shima, Mie, Japan) Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / edited by Hisashi Fukuda. Amsterdam ; London : Elsevier, 2003. 1 online resource (x, 150 pages :) text txt rdacontent computer c rdamedia online resource cr rdacarrier This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies. Print version record. Includes bibliographical references. Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page. Semiconductors Heat treatment Congresses. Rapid thermal processing Congresses. Semi-conducteurs Traitement thermique Congrès. Recuit thermique rapide Congrès. TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Rapid thermal processing fast Semiconductors Heat treatment fast proceedings (reports) aat Conference papers and proceedings fast Conference papers and proceedings. lcgft http://id.loc.gov/authorities/genreForms/gf2014026068 Actes de congrès. rvmgf Fukuda, Hisashi. http://id.loc.gov/authorities/names/nb2003021584 has work: Rapid thermal processing for future semiconductor devices (Text) https://id.oclc.org/worldcat/entity/E39PCFDyVKbgdv4RMJyc4MYkQm https://id.oclc.org/worldcat/ontology/hasWork Print version: International Conference on Rapid Thermal Processing for Future Semiconductor Devices (2nd : 2001 : Ise-Shima, Mie, Japan). Rapid thermal processing for future semiconductor devices. Amsterdam ; London : Elsevier, 2003 0444513396 9780444513397 (DLC) 2003271753 (OCoLC)51668070 |
| spellingShingle | Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / Cover -- Copyright Page -- CONTENTS -- Preface -- RTP2001 Organization -- Chapter 1. Role of Rapid Thermal Processing in the Development of Disruptive and Non-disruptive Technologies for Semiconductor Manufacturing in the 21st Century -- Chapter 2. Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities -- Chapter 3. Process and Technology Drivers for Single Wafer Processes in DRAM Manufacturing -- Chapter 4. Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals -- Chapter 5. Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication -- Chapter 6. High-Performance Poly-Si TFT and its Application to LCD -- Chapter 7. Rapid Low Temperature Photo Oxidation Processing for Advanced Poly-Si TFTs -- Chapter 8. Properties of Phosphorus-Doped Polycrystalline Silicon Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing -- Chapter 9. Evaluation of Crystalline Defects in Thin, Strained Silicon-Germanium Epitaxial Layers by Optical Shallow Defect Analyzer -- Chapter 10. Novel UV-assisted Rapid Thermal Annealing of Ferroelectric Materials -- Chapter 11. Rapid Thermal Annealing of (l-x)Ta2O5-xTiO2 Thin Films Formed by Metalorganic Decomposition -- Chapter 12. Hard Breakdown Characteristics in a 2.2-nm-thick SiO2 film -- Chapter 13. Rapid Thermal MOCVD Processing for InP-Based Devices -- Chapter 14. Sb Pile-up at the SiO2/Si Interface during Drive-in Process after Predeposition using SOG Source -- Chapter 15. Large Refractive Index C-S-Au Composite Film Formation by Plasma Processes -- Chapter 16. The LEVITOR 4000 system, Ultra-fast, Emissivity-independent, heating of substrates via heat conduction through thin gas layers -- Chapter 17. Steady and Transient Gas Flow Simulation of SiGe Vertical Reactor -- Chapter 18. The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers -- Chapter 19. Si Epitaxial Growth on the Atomic-Order Nitrided Si(l00) Surface in SiH4 Reaction -- Chapter 20. Heavy Doping Characteristics of Si Films Epitaxially Grown at 450oC by Alternately Supplied PH3 and SiH4 -- Last Page. Semiconductors Heat treatment Congresses. Rapid thermal processing Congresses. Semi-conducteurs Traitement thermique Congrès. Recuit thermique rapide Congrès. TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Rapid thermal processing fast Semiconductors Heat treatment fast |
| subject_GND | http://id.loc.gov/authorities/genreForms/gf2014026068 |
| title | Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / |
| title_auth | Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / |
| title_exact_search | Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / |
| title_full | Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / edited by Hisashi Fukuda. |
| title_fullStr | Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / edited by Hisashi Fukuda. |
| title_full_unstemmed | Rapid thermal processing for future semiconductor devices : proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / edited by Hisashi Fukuda. |
| title_short | Rapid thermal processing for future semiconductor devices : |
| title_sort | rapid thermal processing for future semiconductor devices proceedings of the 2001 international conference on rapid thermal processing for future semiconductor devices rtp 2001 held at ise shima mie japan november 14 16 2001 |
| title_sub | proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP 2001), held at Ise-Shima, Mie, Japan, November 14-16, 2001 / |
| topic | Semiconductors Heat treatment Congresses. Rapid thermal processing Congresses. Semi-conducteurs Traitement thermique Congrès. Recuit thermique rapide Congrès. TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Rapid thermal processing fast Semiconductors Heat treatment fast |
| topic_facet | Semiconductors Heat treatment Congresses. Rapid thermal processing Congresses. Semi-conducteurs Traitement thermique Congrès. Recuit thermique rapide Congrès. TECHNOLOGY & ENGINEERING Electronics Solid State. TECHNOLOGY & ENGINEERING Electronics Semiconductors. Rapid thermal processing Semiconductors Heat treatment proceedings (reports) Conference papers and proceedings Conference papers and proceedings. Actes de congrès. |
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