GaN-based materials and devices :: growth, fabrication, characterization and performance /
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentratio...
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| Other Authors: | , |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
River Edge, N.J. ; London :
World Scientific.,
©2004.
|
| Series: | Selected topics in electronics and systems ;
v. 33. |
| Subjects: | |
| Online Access: | DE-862 DE-863 |
| Summary: | The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology. |
| Physical Description: | 1 online resource (x, 284 pages :) |
| Bibliography: | Includes bibliographical references. |
| ISBN: | 9812562362 9789812562364 1281347620 9781281347626 |
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| 520 | |a The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology. | ||
| 505 | 0 | 0 | |t Materials Properties of Nitrides. Summary/ |r S.L. Rumyantsev, M.S. Shur, and M.E. Levinshtein -- |t Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/ |r A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis -- |t Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/ |r S. Einfeldt, Z.J. Reitmeier, and R.F. Davis -- |t Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/ |r P.R. Tavernier, E.V. Etzkorn, and D.R. Clarke -- |t Cracking of GaN Films/ |r E.V. Etzkorn and D.R. Clarke -- |t Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/ |r J. Lee, R.F. Davis, and R.J. Nemanich -- |t Electronic Properties of GaN(0001) -- Dielectric Interfaces/ |r T.E. Cook, Jr., C.C. Fulton, W.J. Mecouch, R.F. Davis, G. Lucovsky, and R.J. Nemanich -- |t Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/ |r K.W. Kim, V.A. Kochelap, V.N. Sokolov, and S.M. Komirenko -- |t High Field Transport in AlN/ |r R. Collazo, R. Schlesser, and Z. Sitar -- |t Generation-Recombination Noise in GaN-Based Devices/ |r S.L. Rumyantsev, N. Pala, M.S. Shur, M.E. Levinshtein, R. Gaska, M. Asif Khan, and G. Simin -- |t Insulated Gate 111-N Heterostructure Field-Effect Transistors/ |r G. Simin, M. Asif Khan, M.S. Shur, and R. Gaska -- |t High Voltage AIGaN/GaN Heterojunction Transistors/ |r L.S. McCarthy, N-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U.K. Mishra -- |t Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/ |r Y. Gao, I. Ben-Yaacov, U. Mishra, and E. Hu -- |t n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/ |r S. Estrada, E. Hu, and U. Mishra. |
| 650 | 0 | |a Gallium nitride. |0 http://id.loc.gov/authorities/subjects/sh96005578 | |
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 6 | |a Nitrure de gallium. | |
| 650 | 6 | |a Semi-conducteurs |x Matériaux. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 0 | 7 | |a Gallium nitride. |2 cct |
| 650 | 0 | 7 | |a Semiconductors |x Materials. |2 cct |
| 650 | 7 | |a Gallium nitride |2 fast | |
| 650 | 7 | |a Semiconductors |x Materials |2 fast | |
| 700 | 1 | |a Shur, Michael. | |
| 700 | 1 | |a Davis, Robert F. |q (Robert Foster), |d 1942- |1 https://id.oclc.org/worldcat/entity/E39PBJh4rJVGBd8dWYmvXwTj4q |0 http://id.loc.gov/authorities/names/n78040303 | |
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| 830 | 0 | |a Selected topics in electronics and systems ; |v v. 33. |0 http://id.loc.gov/authorities/names/no95054495 | |
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| author2 | Shur, Michael Davis, Robert F. (Robert Foster), 1942- |
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| author_GND | http://id.loc.gov/authorities/names/n78040303 |
| author_additional | S.L. Rumyantsev, M.S. Shur, and M.E. Levinshtein -- A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis -- S. Einfeldt, Z.J. Reitmeier, and R.F. Davis -- P.R. Tavernier, E.V. Etzkorn, and D.R. Clarke -- E.V. Etzkorn and D.R. Clarke -- J. Lee, R.F. Davis, and R.J. Nemanich -- T.E. Cook, Jr., C.C. Fulton, W.J. Mecouch, R.F. Davis, G. Lucovsky, and R.J. Nemanich -- K.W. Kim, V.A. Kochelap, V.N. Sokolov, and S.M. Komirenko -- R. Collazo, R. Schlesser, and Z. Sitar -- S.L. Rumyantsev, N. Pala, M.S. Shur, M.E. Levinshtein, R. Gaska, M. Asif Khan, and G. Simin -- G. Simin, M. Asif Khan, M.S. Shur, and R. Gaska -- L.S. McCarthy, N-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U.K. Mishra -- Y. Gao, I. Ben-Yaacov, U. Mishra, and E. Hu -- S. Estrada, E. Hu, and U. Mishra. |
| author_facet | Shur, Michael Davis, Robert F. (Robert Foster), 1942- |
| author_sort | Shur, Michael |
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| bvnumber | localFWS |
| callnumber-first | T - Technology |
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| callnumber-raw | TK7871.15.G33 G36 2004eb |
| callnumber-search | TK7871.15.G33 G36 2004eb |
| callnumber-sort | TK 47871.15 G33 G36 42004EB |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | Materials Properties of Nitrides. Summary/ Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/ Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/ Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/ Cracking of GaN Films/ Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/ Electronic Properties of GaN(0001) -- Dielectric Interfaces/ Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/ High Field Transport in AlN/ Generation-Recombination Noise in GaN-Based Devices/ Insulated Gate 111-N Heterostructure Field-Effect Transistors/ High Voltage AIGaN/GaN Heterojunction Transistors/ Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/ n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/ |
| ctrlnum | (OCoLC)59550183 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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Davis.</subfield></datafield><datafield tag="260" ind1=" " ind2=" "><subfield code="a">River Edge, N.J. ;</subfield><subfield code="a">London :</subfield><subfield code="b">World Scientific.,</subfield><subfield code="c">©2004.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (x, 284 pages :)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected topics in electronics and systems ;</subfield><subfield code="v">vol. 33</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.</subfield></datafield><datafield tag="505" ind1="0" ind2="0"><subfield code="t">Materials Properties of Nitrides. Summary/</subfield><subfield code="r">S.L. Rumyantsev, M.S. Shur, and M.E. Levinshtein --</subfield><subfield code="t">Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/</subfield><subfield code="r">A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis --</subfield><subfield code="t">Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/</subfield><subfield code="r">S. Einfeldt, Z.J. Reitmeier, and R.F. Davis --</subfield><subfield code="t">Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/</subfield><subfield code="r">P.R. Tavernier, E.V. Etzkorn, and D.R. Clarke --</subfield><subfield code="t">Cracking of GaN Films/</subfield><subfield code="r">E.V. Etzkorn and D.R. Clarke --</subfield><subfield code="t">Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/</subfield><subfield code="r">J. Lee, R.F. Davis, and R.J. 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| id | ZDB-4-EBA-ocm59550183 |
| illustrated | Illustrated |
| indexdate | 2025-03-18T14:14:02Z |
| institution | BVB |
| isbn | 9812562362 9789812562364 1281347620 9781281347626 |
| language | English |
| oclc_num | 59550183 |
| open_access_boolean | |
| owner | MAIN DE-862 DE-BY-FWS DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-862 DE-BY-FWS DE-863 DE-BY-FWS |
| physical | 1 online resource (x, 284 pages :) |
| psigel | ZDB-4-EBA FWS_PDA_EBA ZDB-4-EBA |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | World Scientific., |
| record_format | marc |
| series | Selected topics in electronics and systems ; |
| series2 | Selected topics in electronics and systems ; |
| spelling | GaN-based materials and devices : growth, fabrication, characterization and performance / editors M.S. Shur, R.F. Davis. River Edge, N.J. ; London : World Scientific., ©2004. 1 online resource (x, 284 pages :) text txt rdacontent computer c rdamedia online resource cr rdacarrier Selected topics in electronics and systems ; vol. 33 Includes bibliographical references. Print version record. The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AIN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology. Materials Properties of Nitrides. Summary/ S.L. Rumyantsev, M.S. Shur, and M.E. Levinshtein -- Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/ A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis -- Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/ S. Einfeldt, Z.J. Reitmeier, and R.F. Davis -- Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/ P.R. Tavernier, E.V. Etzkorn, and D.R. Clarke -- Cracking of GaN Films/ E.V. Etzkorn and D.R. Clarke -- Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/ J. Lee, R.F. Davis, and R.J. Nemanich -- Electronic Properties of GaN(0001) -- Dielectric Interfaces/ T.E. Cook, Jr., C.C. Fulton, W.J. Mecouch, R.F. Davis, G. Lucovsky, and R.J. Nemanich -- Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/ K.W. Kim, V.A. Kochelap, V.N. Sokolov, and S.M. Komirenko -- High Field Transport in AlN/ R. Collazo, R. Schlesser, and Z. Sitar -- Generation-Recombination Noise in GaN-Based Devices/ S.L. Rumyantsev, N. Pala, M.S. Shur, M.E. Levinshtein, R. Gaska, M. Asif Khan, and G. Simin -- Insulated Gate 111-N Heterostructure Field-Effect Transistors/ G. Simin, M. Asif Khan, M.S. Shur, and R. Gaska -- High Voltage AIGaN/GaN Heterojunction Transistors/ L.S. McCarthy, N-Q. Zhang, H. Xing, B. Moran, S. DenBaars, and U.K. Mishra -- Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/ Y. Gao, I. Ben-Yaacov, U. Mishra, and E. Hu -- n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/ S. Estrada, E. Hu, and U. Mishra. Gallium nitride. http://id.loc.gov/authorities/subjects/sh96005578 Semiconductors Materials. Nitrure de gallium. Semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Gallium nitride. cct Semiconductors Materials. cct Gallium nitride fast Semiconductors Materials fast Shur, Michael. Davis, Robert F. (Robert Foster), 1942- https://id.oclc.org/worldcat/entity/E39PBJh4rJVGBd8dWYmvXwTj4q http://id.loc.gov/authorities/names/n78040303 has work: GaN-based materials and devices (Text) https://id.oclc.org/worldcat/entity/E39PCFQ78dcCKYCxHf3K3pdYT3 https://id.oclc.org/worldcat/ontology/hasWork Print version: GaN-based materials and devices. River Edge, N.J. ; London : World Scientific., ©2004 9812388443 (OCoLC)56658540 Selected topics in electronics and systems ; v. 33. http://id.loc.gov/authorities/names/no95054495 |
| spellingShingle | GaN-based materials and devices : growth, fabrication, characterization and performance / Selected topics in electronics and systems ; Materials Properties of Nitrides. Summary/ Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/ Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/ Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/ Cracking of GaN Films/ Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/ Electronic Properties of GaN(0001) -- Dielectric Interfaces/ Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/ High Field Transport in AlN/ Generation-Recombination Noise in GaN-Based Devices/ Insulated Gate 111-N Heterostructure Field-Effect Transistors/ High Voltage AIGaN/GaN Heterojunction Transistors/ Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/ n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/ Gallium nitride. http://id.loc.gov/authorities/subjects/sh96005578 Semiconductors Materials. Nitrure de gallium. Semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Gallium nitride. cct Semiconductors Materials. cct Gallium nitride fast Semiconductors Materials fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh96005578 |
| title | GaN-based materials and devices : growth, fabrication, characterization and performance / |
| title_alt | Materials Properties of Nitrides. Summary/ Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy/ Strain of GaN Layers Grown Using 6s-SiC(OOO1) Substrates with Different Buffer Layers/ Growth of Thick GaN Films and Seeds for Bulk Crystal Growth/ Cracking of GaN Films/ Direct Bonding of GaN and Sic; A Novel Technique for Electronic Device Fabrication/ Electronic Properties of GaN(0001) -- Dielectric Interfaces/ Quasi-Ballistic and Overshoot Transport in Group 111-Nitrides/ High Field Transport in AlN/ Generation-Recombination Noise in GaN-Based Devices/ Insulated Gate 111-N Heterostructure Field-Effect Transistors/ High Voltage AIGaN/GaN Heterojunction Transistors/ Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching/ n-AlGaAs/pGaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion/ |
| title_auth | GaN-based materials and devices : growth, fabrication, characterization and performance / |
| title_exact_search | GaN-based materials and devices : growth, fabrication, characterization and performance / |
| title_full | GaN-based materials and devices : growth, fabrication, characterization and performance / editors M.S. Shur, R.F. Davis. |
| title_fullStr | GaN-based materials and devices : growth, fabrication, characterization and performance / editors M.S. Shur, R.F. Davis. |
| title_full_unstemmed | GaN-based materials and devices : growth, fabrication, characterization and performance / editors M.S. Shur, R.F. Davis. |
| title_short | GaN-based materials and devices : |
| title_sort | gan based materials and devices growth fabrication characterization and performance |
| title_sub | growth, fabrication, characterization and performance / |
| topic | Gallium nitride. http://id.loc.gov/authorities/subjects/sh96005578 Semiconductors Materials. Nitrure de gallium. Semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Gallium nitride. cct Semiconductors Materials. cct Gallium nitride fast Semiconductors Materials fast |
| topic_facet | Gallium nitride. Semiconductors Materials. Nitrure de gallium. Semi-conducteurs Matériaux. TECHNOLOGY & ENGINEERING Electronics Solid State. TECHNOLOGY & ENGINEERING Electronics Semiconductors. Gallium nitride Semiconductors Materials |
| work_keys_str_mv | AT shurmichael ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance AT davisrobertf ganbasedmaterialsanddevicesgrowthfabricationcharacterizationandperformance |