Advances in silicon carbide processing and applications /:
Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begin...
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston :
Artech House,
[2004]
|
| Schriftenreihe: | Artech House semiconductor materials and devices library.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications. |
| Beschreibung: | 1 online resource (xiii, 212 pages) : illustrations. |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9781580537414 1580537413 9781580537407 1580537405 |
Internformat
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| 245 | 0 | 0 | |a Advances in silicon carbide processing and applications / |c Stephen E. Saddow, Anant Agarwal, editors. |
| 264 | 1 | |a Boston : |b Artech House, |c [2004] | |
| 264 | 4 | |c ©2004 | |
| 300 | |a 1 online resource (xiii, 212 pages) : |b illustrations. | ||
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| 520 | 8 | |a Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications. | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. | |
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Silicon carbide. |0 http://id.loc.gov/authorities/subjects/sh85122519 | |
| 650 | 0 | |a Semiconductors. |0 http://id.loc.gov/authorities/subjects/sh85119903 | |
| 650 | 2 | |a Semiconductors |0 https://id.nlm.nih.gov/mesh/D012666 | |
| 650 | 6 | |a Semi-conducteurs. | |
| 650 | 7 | |a semiconductor. |2 aat | |
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| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
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| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Silicon carbide |2 fast | |
| 700 | 1 | |a Saddow, Stephen E., |e editor. |0 http://id.loc.gov/authorities/names/n2003015190 | |
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| author2 | Saddow, Stephen E. Agarwal, Anant (Anant K.) |
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| contents | 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. |
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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Saddow, Anant Agarwal, editors.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston :</subfield><subfield code="b">Artech House,</subfield><subfield code="c">[2004]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">©2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource (xiii, 212 pages) :</subfield><subfield code="b">illustrations.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="347" ind1=" " ind2=" "><subfield code="a">data file</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Semiconductor materials and devices series</subfield></datafield><datafield tag="520" ind1="8" ind2=" "><subfield code="a">Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.</subfield></datafield><datafield tag="504" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index.</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. 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| id | ZDB-4-EBA-ocm56123954 |
| illustrated | Illustrated |
| indexdate | 2024-11-27T13:15:34Z |
| institution | BVB |
| isbn | 9781580537414 1580537413 9781580537407 1580537405 |
| language | English |
| oclc_num | 56123954 |
| open_access_boolean | |
| owner | MAIN DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-863 DE-BY-FWS |
| physical | 1 online resource (xiii, 212 pages) : illustrations. |
| psigel | ZDB-4-EBA |
| publishDate | 2004 |
| publishDateSearch | 2004 |
| publishDateSort | 2004 |
| publisher | Artech House, |
| record_format | marc |
| series | Artech House semiconductor materials and devices library. |
| series2 | Semiconductor materials and devices series |
| spelling | Advances in silicon carbide processing and applications / Stephen E. Saddow, Anant Agarwal, editors. Boston : Artech House, [2004] ©2004 1 online resource (xiii, 212 pages) : illustrations. text txt rdacontent computer c rdamedia online resource cr rdacarrier data file Semiconductor materials and devices series Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications. Includes bibliographical references and index. 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. Print version record. Silicon carbide. http://id.loc.gov/authorities/subjects/sh85122519 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Silicon carbide. cct Semiconductors. cct Semiconductors fast Silicon carbide fast Saddow, Stephen E., editor. http://id.loc.gov/authorities/names/n2003015190 Agarwal, Anant (Anant K.), editor. https://id.oclc.org/worldcat/entity/E39PCjtTDKQxKyphpyqvW4qGBK http://id.loc.gov/authorities/names/n2001009351 has work: Advances in silicon carbide processing and applications (Text) https://id.oclc.org/worldcat/entity/E39PCGVjdHGMfKMWXw3BVtYH83 https://id.oclc.org/worldcat/ontology/hasWork Print version: Advances in silicon carbide processing and applications. Boston : Artech House, ©2004 1580537405 (DLC) 2004052344 (OCoLC)55502702 Artech House semiconductor materials and devices library. http://id.loc.gov/authorities/names/n2004004232 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=113805 Volltext |
| spellingShingle | Advances in silicon carbide processing and applications / Artech House semiconductor materials and devices library. 1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour. Silicon carbide. http://id.loc.gov/authorities/subjects/sh85122519 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Silicon carbide. cct Semiconductors. cct Semiconductors fast Silicon carbide fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85122519 http://id.loc.gov/authorities/subjects/sh85119903 https://id.nlm.nih.gov/mesh/D012666 |
| title | Advances in silicon carbide processing and applications / |
| title_auth | Advances in silicon carbide processing and applications / |
| title_exact_search | Advances in silicon carbide processing and applications / |
| title_full | Advances in silicon carbide processing and applications / Stephen E. Saddow, Anant Agarwal, editors. |
| title_fullStr | Advances in silicon carbide processing and applications / Stephen E. Saddow, Anant Agarwal, editors. |
| title_full_unstemmed | Advances in silicon carbide processing and applications / Stephen E. Saddow, Anant Agarwal, editors. |
| title_short | Advances in silicon carbide processing and applications / |
| title_sort | advances in silicon carbide processing and applications |
| topic | Silicon carbide. http://id.loc.gov/authorities/subjects/sh85122519 Semiconductors. http://id.loc.gov/authorities/subjects/sh85119903 Semiconductors https://id.nlm.nih.gov/mesh/D012666 Semi-conducteurs. semiconductor. aat TECHNOLOGY & ENGINEERING Electronics Solid State. bisacsh TECHNOLOGY & ENGINEERING Electronics Semiconductors. bisacsh Silicon carbide. cct Semiconductors. cct Semiconductors fast Silicon carbide fast |
| topic_facet | Silicon carbide. Semiconductors. Semiconductors Semi-conducteurs. semiconductor. TECHNOLOGY & ENGINEERING Electronics Solid State. TECHNOLOGY & ENGINEERING Electronics Semiconductors. Silicon carbide |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=113805 |
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