Physics-based trap modeling of GaN HEMTs:
Saved in:
Bibliographic Details
Main Author: Beleniotis, Petros (Author)
Format: Thesis Book
Language:English
Published: Cottbus ; Senftenberg Brandenburgische Technische Universität 2024
Subjects:
Online Access:Volltext
Volltext
Volltext
Physical Description:xi, 152 Seiten Illustrationen, Diagramme
DOI:10.26127/BTUOpen-6933

There is no print copy available.

Interlibrary loan Place Request Caution: Not in THWS collection! Get full text