Device circuit co-design issues in FETs:
This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devi...
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Main Author: | |
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Format: | Book |
Language: | English |
Published: |
Boca Raton
CRC Press
[2024]
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Series: | Materials, Devices, and Circuits
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Subjects: | |
Summary: | This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues. |
Physical Description: | xvii, 261 Seiten Illustrationen, Diagramme 517 gr |
ISBN: | 9781032414256 9781032416823 |
Staff View
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id | DE-604.BV050159452 |
illustrated | Illustrated |
indexdate | 2025-03-17T13:01:18Z |
institution | BVB |
isbn | 9781032414256 9781032416823 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-035495616 |
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owner | DE-29T |
owner_facet | DE-29T |
physical | xvii, 261 Seiten Illustrationen, Diagramme 517 gr |
publishDate | 2024 |
publishDateSearch | 2024 |
publishDateSort | 2024 |
publisher | CRC Press |
record_format | marc |
series2 | Materials, Devices, and Circuits |
spelling | Device circuit co-design issues in FETs edited by Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, Zeinab Ramezani Boca Raton CRC Press [2024] xvii, 261 Seiten Illustrationen, Diagramme 517 gr txt rdacontent n rdamedia nc rdacarrier Materials, Devices, and Circuits This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues. bicssc / Electronic devices & materials bicssc / Mathematical modelling bicssc / Electrical engineering bicssc / Microwave technology bisacsh / TECHNOLOGY & ENGINEERING / Electrical Tayal, Shubham Sonstige oth Smaani, Billel Sonstige oth Rahi, Shiromani Balmukund Sonstige oth Labiod, Samir Sonstige oth Ramezani, Zeinab Sonstige oth Erscheint auch als Online-Ausgabe 978-1-00335923-4 |
spellingShingle | Tayal, Shubham Device circuit co-design issues in FETs bicssc / Electronic devices & materials bicssc / Mathematical modelling bicssc / Electrical engineering bicssc / Microwave technology bisacsh / TECHNOLOGY & ENGINEERING / Electrical |
title | Device circuit co-design issues in FETs |
title_auth | Device circuit co-design issues in FETs |
title_exact_search | Device circuit co-design issues in FETs |
title_full | Device circuit co-design issues in FETs edited by Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, Zeinab Ramezani |
title_fullStr | Device circuit co-design issues in FETs edited by Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, Zeinab Ramezani |
title_full_unstemmed | Device circuit co-design issues in FETs edited by Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, Zeinab Ramezani |
title_short | Device circuit co-design issues in FETs |
title_sort | device circuit co design issues in fets |
topic | bicssc / Electronic devices & materials bicssc / Mathematical modelling bicssc / Electrical engineering bicssc / Microwave technology bisacsh / TECHNOLOGY & ENGINEERING / Electrical |
topic_facet | bicssc / Electronic devices & materials bicssc / Mathematical modelling bicssc / Electrical engineering bicssc / Microwave technology bisacsh / TECHNOLOGY & ENGINEERING / Electrical |
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