Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications:
Gespeichert in:
1. Verfasser: | |
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Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
Berlin
2024
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Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | xiv, 195 Seiten Illustrationen, Diagramme |
Internformat
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264 | 1 | |a Berlin |c 2024 | |
300 | |a xiv, 195 Seiten |b Illustrationen, Diagramme | ||
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337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
502 | |b Dissertation |c Freie Universität Berlin |d 2024 | ||
650 | 4 | |a Ferroelectric tunnel junction devices | |
650 | 4 | |a FTJ devices | |
650 | 4 | |a HZO-Al2O3 bilayer FTJ | |
650 | 4 | |a Impact of wake-up cycling on FTJ performance | |
650 | 4 | |a Neuromorphic application of FTJ | |
650 | 4 | |a BEOL FTJ current amplification with FEOL nmos transistor | |
650 | 4 | |a FTJ device stack optimization | |
650 | 4 | |a CMOS back end of line integration of FTJ | |
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
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856 | 4 | 1 | |u https://refubium.fu-berlin.de/handle/fub188/45749 |x Resolving-System |z kostenfrei |3 Volltext |
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Datensatz im Suchindex
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adam_text | |
any_adam_object | |
author | Shajil Nair, Keerthana |
author_GND | (DE-588)1350302740 |
author_facet | Shajil Nair, Keerthana |
author_role | aut |
author_sort | Shajil Nair, Keerthana |
author_variant | n k s nk nks |
building | Verbundindex |
bvnumber | BV050067385 |
collection | ebook |
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dewey-ones | 540 - Chemistry and allied sciences |
dewey-raw | 540 |
dewey-search | 540 |
dewey-sort | 3540 |
dewey-tens | 540 - Chemistry and allied sciences |
discipline | Chemie / Pharmazie |
format | Thesis Book |
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genre_facet | Hochschulschrift |
id | DE-604.BV050067385 |
illustrated | Illustrated |
indexdate | 2025-01-28T11:09:37Z |
institution | BVB |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-035404845 |
oclc_num | 1477606721 |
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owner | DE-188 |
owner_facet | DE-188 |
physical | xiv, 195 Seiten Illustrationen, Diagramme |
psigel | ebook |
publishDate | 2024 |
publishDateSearch | 2024 |
publishDateSort | 2024 |
record_format | marc |
spelling | Shajil Nair, Keerthana Verfasser (DE-588)1350302740 aut Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications by Keerthana Shajil Nair Berlin 2024 xiv, 195 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Freie Universität Berlin 2024 Ferroelectric tunnel junction devices FTJ devices HZO-Al2O3 bilayer FTJ Impact of wake-up cycling on FTJ performance Neuromorphic application of FTJ BEOL FTJ current amplification with FEOL nmos transistor FTJ device stack optimization CMOS back end of line integration of FTJ (DE-588)4113937-9 Hochschulschrift gnd-content Erscheint auch als Online-Ausgabe Shajil Nair, Keerthana Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications 10.17169/refubium-45462 (DE-604)BV050067383 https://refubium.fu-berlin.de/handle/fub188/45749 Resolving-System kostenfrei Volltext |
spellingShingle | Shajil Nair, Keerthana Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications Ferroelectric tunnel junction devices FTJ devices HZO-Al2O3 bilayer FTJ Impact of wake-up cycling on FTJ performance Neuromorphic application of FTJ BEOL FTJ current amplification with FEOL nmos transistor FTJ device stack optimization CMOS back end of line integration of FTJ |
subject_GND | (DE-588)4113937-9 |
title | Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications |
title_auth | Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications |
title_exact_search | Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications |
title_full | Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications by Keerthana Shajil Nair |
title_fullStr | Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications by Keerthana Shajil Nair |
title_full_unstemmed | Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications by Keerthana Shajil Nair |
title_short | Development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications |
title_sort | development of ferroelectric tunnel junction devices based on hafnia zirconia films for neuromorphic applications |
topic | Ferroelectric tunnel junction devices FTJ devices HZO-Al2O3 bilayer FTJ Impact of wake-up cycling on FTJ performance Neuromorphic application of FTJ BEOL FTJ current amplification with FEOL nmos transistor FTJ device stack optimization CMOS back end of line integration of FTJ |
topic_facet | Ferroelectric tunnel junction devices FTJ devices HZO-Al2O3 bilayer FTJ Impact of wake-up cycling on FTJ performance Neuromorphic application of FTJ BEOL FTJ current amplification with FEOL nmos transistor FTJ device stack optimization CMOS back end of line integration of FTJ Hochschulschrift |
url | https://refubium.fu-berlin.de/handle/fub188/45749 |
work_keys_str_mv | AT shajilnairkeerthana developmentofferroelectrictunneljunctiondevicesbasedonhafniazirconiafilmsforneuromorphicapplications |