Semiconductor Photodetectors: Optical Spectrometry
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin
De Gruyter
2024
|
| Schriftenreihe: | De Gruyter STEM
|
| Schlagworte: | |
| Online-Zugang: | https://www.degruyter.com/isbn/9783111427874 Inhaltsverzeichnis |
| Beschreibung: | XVI, 170 Seiten 24 cm x 17 cm |
| ISBN: | 9783111427874 3111427870 |
Internformat
MARC
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| 100 | 1 | |a Khudaverdyan, Surik |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Semiconductor Photodetectors |b Optical Spectrometry |c Surik Khudaverdyan, Ashok Vaseashta |
| 264 | 1 | |a Berlin |b De Gruyter |c 2024 | |
| 300 | |a XVI, 170 Seiten |c 24 cm x 17 cm | ||
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| 653 | |a Optik | ||
| 653 | |a Photonik | ||
| 653 | |a Photonics | ||
| 653 | |a Sensors | ||
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| 689 | 0 | 0 | |a Optische Spektroskopie |0 (DE-588)4043680-9 |D s |
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| 700 | 1 | |a Vaseashta, Ashok |e Verfasser |4 aut | |
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Datensatz im Suchindex
| _version_ | 1826551927840702464 |
|---|---|
| adam_text |
CONTENTS
FOREWORD
-
V
PREFACE
-
VII
GLOSSARY
OF
SYMBOLS
AND
SCIENTIFIC
NOTATIONS
-
XV
INTRODUCTION
-
1
PART
1:
PHOTODETECTOR
STRUCTURES
CHAPTER
1
PHOTODIODE
STRUCTURES
WITH
A
HIGH-RESISTANCE
LAYER
-
7
1.1
INTRODUCTION:
INJECTION
AMPLIFICATION
OF
PHOTOCURRENT
IN
CDTE-BASED
DIODE
STRUCTURES
-
7
1.1.1
1.1.2
1.1.3
1.1.4
1.1.5
1.1.6
PRINCIPLE
OF
PHOTOCURRENT
AMPLIFICATION
-
7
CURRENT-VOLTAGE
CHARACTERISTICS
OF
DIODES
-
8
SPECTRAL
CHARACTERISTICS
OF
DIODES
-
9
EVALUATION
OF
PHOTOSENSITIVITY
AND
NOISE
OF
DIODE
STRUCTURES
-
10
SPEED
OF
DIODES
-
12
MECHANISM
OF
PHOTOSENSITIVITY
OF
DIODE
STRUCTURES
BY
ENERGY
DIAGRAMS
-
13
1.1.7
1.2
MECHANISM
OF
PHOTOSENSITIVITY
OF
DIODES
AT
FORWARD
BIAS
-
15
SUMMARY
-
17
CHAPTER
2
CADMIUM
TELLURIDE-BASED
HIGHLY
SENSITIVE
PHOTOSENSORS
-
18
2.1
2.2
INTRODUCTION
-
18
CADMIUM
TELLURIDE-BASED
INJECTION
DETECTORS
FOR
IONIZING
RADIATION
-
18
2.3
MECHANISM
OF
FREE
CARRIER
GENERATION
UPON
IRRADIATION
BY
HIGH
ENERGY
PHOTONS
-
19
2.4
2.5
2.6
2.7
DIODE
CHARACTERISTICS
AND
PARAMETERS
UNDER
X-RAY
IRRADIATION
-
20
DOSE
SENSITIVITY
OF
DIODES
EXPOSED
TO
X-RADIATION
-
23
THRESHOLDS
AND
DETECTION
ABILITY
OF
DIODES
UNDER
X-RADIATION
-
24
INTERCONNECTION
OF
SENSITIVITY
IN
THE
INTRINSIC
AND
X-RAY
REGIONS
OF
THE
SPECTRUM
-
25
2.8
SUMMARY
-
26
XII
-
CONTENTS
CHAPTER
3
CADMIUM
TELLURIDE
AND
SILICON-BASED
PHOTODIODES
-
28
3.1
3.2
3.3
3.4
INTRODUCTION
-
28
CADMIUM
TELLURIDE-BASED
DIODES
-
28
SILICON-BASED
DIODES
----
29
MECHANISM
OF
SPECTRAL
PHOTOCURRENT
SIGN
CHANGE
IN
DIODE
STRUCTURES
----
32
3.5
DEPENDENCE
OF
THE
THICKNESS
OF
THE
ENERGY
BARRIERS
ON
THE
EXTERNAL
VOLTAGE
IN
STRUCTURES
WITH
A
HIGH-RESISTANCE
LAYER
BETWEEN
SCHOTTKY
BARRIERS
----
35
3.6
DARK
CURRENT-VOLTAGE
CHARACTERISTICS
OF
A
STRUCTURE
WITH
A
HIGH
RESISTANCE
THIN
LAYER
BETWEEN
OPPOSITELY
DIRECTED
SCHOTTKY
BARRIERS
----
39
3.7
LIGHT
CURRENT-VOLTAGE
CHARACTERISTICS
OF
TWO-BARRIER
DIODE
STRUCTURES
WITH
A
HIGH-RESISTANCE
THIN
LAYER
BETWEEN
OPPOSITELY
DIRECTED
SCHOTTKY
BARRIERS
-
41
3.8
SUMMARY
----
44
PART
2:
METHODS
OF
SPECTRAL-SELECTIVE
SENSITIVITY
OF
OPTICAL
RADIATION
CHAPTER
4
SPECTRAL-SELECTIVE
SENSITIVITY
OF
OPTICAL
RADIATION
-
47
4.1
4.2
4.3
INTRODUCTION
----
47
DETECTORS
WITH
SELECTIVE
SPECTRAL
SENSITIVITY
-
47
SPECTROPHOTOMETRIC
PROPERTIES
OF
PHOTODETECTORS
WITH
TWO-BARRIER
STRUCTURES:
ADVANTAGES
AND
DISADVANTAGES
-
52
4.4
4.4.1
4.4.2
4.5
STATE-OF-THE-ART
CAPABILITIES
OF
THE
OPTICAL
SPECTRAL
ANALYSIS
-
54
LIGHT
SOURCES
----
58
DETECTORS
-
60
SUMMARY
-
64
PART
3:
STRUCTURAL
AND
TECHNOLOGICAL
ASPECTS
CHAPTER
5
STRUCTURAL
AND
TECHNOLOGICAL
ASPECTS
OF
PHOTODETECTORS
-
69
5.1
5.2
INTRODUCTION
-
69
STRUCTURAL
FEATURES
OF
THE
PHOTODETECTORS
DERIVED
FOR
PHOTOSPECTROMETRY
-
69
5.3
RELATING
STRUCTURAL,
ENERGY,
AND
TECHNOLOGICAL
PARAMETERS
OF
PHOTODETECTORS
-
73
CONTENTS
-
XIII
5.4
STRUCTURAL
LAYERS
OF
THE
SPECTROMETRIC
PHOTODETECTOR
-
80
5.4.1
FORMING
P
+
AND
N
LAYERS
-
80
5.5
OHMIC
CONTACTS
AND
THE
TECHNOLOGICAL
PARAMETERS
OF
THE
STRUCTURE
-
81
5.6
CHOICE
OF
THE
SILICIDE
BARRIER
-
83
5.7
SUMMARY
-----
85
PART
4:
MEASUREMENT
METHODS
AND
PHOTOELECTRONIC
CHARACTERISTICS
CHAPTER
6
PHOTOELECTRONIC
CHARACTERISTICS
AND
MEASUREMENT
METHODS
-
89
6.1
INTRODUCTION
-
89
6.2
CURRENT-VOLTAGE
CHARACTERISTICS
-
89
6.3
VOLT-FARAD
CHARACTERISTIC
-
95
6.4
P
+
(PTSI)-N(SI)-P
+
(SI)
STRUCTURE
AND
PARAMETRIC
DEPENDENCE
OF
ABSORBED
RADIATION
-
98
6.5
SUMMARY
-----
103
PART
5:
RESEARCH
RESULTS
CHAPTER
7
PERFORMANCE
ASSESSMENT
OF
PHOTODETECTORS
-
107
7.1
INTRODUCTION
-----
107
7.2
PERFORMANCE
CAPABILITIES
OF
THE
SPECTRAL-SELECTIVE
SENSITIVITY
OF
THE
PHOTODETECTORS
-
107
7.3
NOISES
IN
THE
P
+
(PTSI)-N(SI)-P
+
(SI)
STRUCTURE:
PERFORMANCE
AND
THRESHOLD
PHOTOSENSITIVITY
-
112
7.4
SPEED
ASSESSMENT
-
114
7.5
THE
EFFICIENCY
ASSESSMENT
OF
THE
WORK
IN
TERMS
OF
THE
CURRENT
DEMANDS
-
114
7.6
SUMMARY:
A
DEMAND
ANALYSIS
OF
THE
PROPOSED
PHOTODETECTORS
-
117
PART
6:
ON
THE
SEMICONDUCTOR
SPECTROSCOPY
CHAPTER
8
IDENTIFICATION
OF
EMERGENT
CONTAMINANTS
IN
TRANSPARENT
MEDIA
-
121
8.1
INTRODUCTION
-
121
8.2
STATE-OF-THE-ART
SEMICONDUCTOR
SPECTROSCOPY
-
121
8.2.1
INNOVATIVE
METHOD
OF
SPECTROSCOPY
-
122
XIV
-
CONTENTS
8.3
PHOTOELECTRONIC
PROCESSES:
SELECTIVE
SPECTRAL
SENSITIVITY
-
123
8.3.1
TUNNELING
ISSUES
-
124
8.4
INTERRELATION
OF
STRUCTURAL
PARAMETERS
-
125
8.4.1
OPTIMAL
DESIGN
OF
PHOTODETECTORS
-
126
8.5
DERIVING
THE
PHOTOCURRENT
EXPRESSION
FOR
SELECTED
STRUCTURES
-
127
8.6
CASE
STUDIES
OF
THREE
TYPICAL
SAMPLES
-
130
8.6.1
SILICIDE-N-P
-----
130
8.6.2
SILICON-N-P-N
-----
131
8.6.3
SILICON1-N-P-N
-
132
8.6.4
MECHANISM
OF
THE
SELECTIVE
SPECTRAL
SENSITIVITY
-
136
8.6.5
INJECTION
AMPLIFICATION
OF
THE
PHOTOCURRENT
-
139
8.7
SUMMARY
-
141
CHAPTER
9
SPECTRAL
SENSITIVITY
-
142
9.1
INTRODUCTION
-
142
9.2
SELECTIVE
SPECTRAL
SENSITIVITY
OF
OPPOSITELY
PLACED
DOUBLE-BARRIER
STRUCTURES
-
142
9.3
EXPERIMENTAL
DEVICE
STRUCTURE
-
143
9.4
RESULTS
FROM
EXPERIMENTAL
STRUCTURE
-
145
9.5
SUMMARY
-
151
CHAPTER
10
HIGH
PHOTOSENSITIVITY
IN
TWO-BARRIER
PHOTODETECTORS
-
152
10.1
INTRODUCTION
-
152
10.2
HIGH
PHOTOSENSITIVITY
IN
TWO-BARRIER
STRUCTURES
-
152
10.3
RESEARCH
DIRECTIONS
-
153
10.4
RESULTS
OF
TWO-BARRIER
STRUCTURES
-
154
10.5
MECHANISM
OF
HIGH
PHOTOSENSITIVITY
-
156
10.6
SUMMARY
-
160
REFERENCES
-
163
ABOUT
THE
AUTHORS
-
171
INDEX
-
173 |
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| author_facet | Khudaverdyan, Surik Vaseashta, Ashok |
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| illustrated | Not Illustrated |
| indexdate | 2025-03-14T07:00:59Z |
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| institution_GND | (DE-588)10095502-2 |
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| language | English |
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| owner | DE-11 |
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| physical | XVI, 170 Seiten 24 cm x 17 cm |
| publishDate | 2024 |
| publishDateSearch | 2024 |
| publishDateSort | 2024 |
| publisher | De Gruyter |
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| spelling | Khudaverdyan, Surik Verfasser aut Semiconductor Photodetectors Optical Spectrometry Surik Khudaverdyan, Ashok Vaseashta Berlin De Gruyter 2024 XVI, 170 Seiten 24 cm x 17 cm txt rdacontent n rdamedia nc rdacarrier De Gruyter STEM Optische Spektroskopie (DE-588)4043680-9 gnd rswk-swf Optik Photonik Photonics Sensors Environment. Optische Spektroskopie (DE-588)4043680-9 s DE-604 Vaseashta, Ashok Verfasser aut Walter de Gruyter GmbH & Co. KG (DE-588)10095502-2 pbl Erscheint auch als Online-Ausgabe 9783111428314 Erscheint auch als Online-Ausgabe 9783111428024 X:MVB https://www.degruyter.com/isbn/9783111427874 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=035235278&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p vlb 20240406 DE-101 https://d-nb.info/provenance/plan#vlb |
| spellingShingle | Khudaverdyan, Surik Vaseashta, Ashok Semiconductor Photodetectors Optical Spectrometry Optische Spektroskopie (DE-588)4043680-9 gnd |
| subject_GND | (DE-588)4043680-9 |
| title | Semiconductor Photodetectors Optical Spectrometry |
| title_auth | Semiconductor Photodetectors Optical Spectrometry |
| title_exact_search | Semiconductor Photodetectors Optical Spectrometry |
| title_full | Semiconductor Photodetectors Optical Spectrometry Surik Khudaverdyan, Ashok Vaseashta |
| title_fullStr | Semiconductor Photodetectors Optical Spectrometry Surik Khudaverdyan, Ashok Vaseashta |
| title_full_unstemmed | Semiconductor Photodetectors Optical Spectrometry Surik Khudaverdyan, Ashok Vaseashta |
| title_short | Semiconductor Photodetectors |
| title_sort | semiconductor photodetectors optical spectrometry |
| title_sub | Optical Spectrometry |
| topic | Optische Spektroskopie (DE-588)4043680-9 gnd |
| topic_facet | Optische Spektroskopie |
| url | https://www.degruyter.com/isbn/9783111427874 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=035235278&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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