Metal Oxide Semiconductors: Synthesis, Properties, and Devices
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Newark
John Wiley & Sons, Incorporated
2023
|
| Ausgabe: | 1st ed |
| Schlagworte: | |
| Online-Zugang: | DE-91 |
| Beschreibung: | Description based on publisher supplied metadata and other sources |
| Beschreibung: | 1 Online-Ressource (186 pages) Illustrationen |
| ISBN: | 9783527842544 |
Internformat
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Datensatz im Suchindex
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| author_facet | Zang, Zhigang |
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| dewey-full | 621.39732 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.39732 |
| dewey-search | 621.39732 |
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| edition | 1st ed |
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| id | DE-604.BV049830216 |
| illustrated | Illustrated |
| indexdate | 2025-01-10T17:14:51Z |
| institution | BVB |
| isbn | 9783527842544 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-035170194 |
| oclc_num | 1411310629 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | 1 Online-Ressource (186 pages) Illustrationen |
| psigel | ZDB-30-PQE ZDB-30-PQE TUM_PDA_PQE |
| publishDate | 2023 |
| publishDateSearch | 2023 |
| publishDateSort | 2023 |
| publisher | John Wiley & Sons, Incorporated |
| record_format | marc |
| spelling | Zang, Zhigang Verfasser aut Metal Oxide Semiconductors Synthesis, Properties, and Devices 1st ed Newark John Wiley & Sons, Incorporated 2023 ©2024 1 Online-Ressource (186 pages) Illustrationen txt rdacontent c rdamedia cr rdacarrier Description based on publisher supplied metadata and other sources MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 Cai, Wensi Sonstige oth Zhou, Yong Sonstige oth Erscheint auch als Druck-Ausgabe Zang, Zhigang Metal Oxide Semiconductors Newark : John Wiley & Sons, Incorporated,c2023 9783527352258 |
| spellingShingle | Zang, Zhigang Metal Oxide Semiconductors Synthesis, Properties, and Devices MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | Metal Oxide Semiconductors Synthesis, Properties, and Devices |
| title_auth | Metal Oxide Semiconductors Synthesis, Properties, and Devices |
| title_exact_search | Metal Oxide Semiconductors Synthesis, Properties, and Devices |
| title_full | Metal Oxide Semiconductors Synthesis, Properties, and Devices |
| title_fullStr | Metal Oxide Semiconductors Synthesis, Properties, and Devices |
| title_full_unstemmed | Metal Oxide Semiconductors Synthesis, Properties, and Devices |
| title_short | Metal Oxide Semiconductors |
| title_sort | metal oxide semiconductors synthesis properties and devices |
| title_sub | Synthesis, Properties, and Devices |
| topic | MOS (DE-588)4130209-6 gnd |
| topic_facet | MOS |
| work_keys_str_mv | AT zangzhigang metaloxidesemiconductorssynthesispropertiesanddevices AT caiwensi metaloxidesemiconductorssynthesispropertiesanddevices AT zhouyong metaloxidesemiconductorssynthesispropertiesanddevices |