Emerging ferroelectric materials and devices:
Front Cover -- Series Page -- Semiconductors and Semimetals -- Copyright -- Contents -- Contributors -- Preface -- Chapter One: Epitaxial ScAlN: Transistors through high ScN fraction thin films -- 1 ScAlN/GaN high-electron-mobility transistors -- 1.1 Introduction -- 1.2 Growth of ScAlN for HEMTs --...
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Cambridge, MA
Elsevier ; Academic Press
2023
|
| Ausgabe: | First edition |
| Schriftenreihe: | Semiconductors and semimetals
volume one hundred and fourteen |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | Front Cover -- Series Page -- Semiconductors and Semimetals -- Copyright -- Contents -- Contributors -- Preface -- Chapter One: Epitaxial ScAlN: Transistors through high ScN fraction thin films -- 1 ScAlN/GaN high-electron-mobility transistors -- 1.1 Introduction -- 1.2 Growth of ScAlN for HEMTs -- 1.2.1 MBE growth of ScAlN -- 1.3 ScAlN HEMT device design and performance -- 1.3.1 Interlayers -- 1.3.2 Dispersion and epitaxial capping layers -- 1.4 Ferroelectric transistors -- 2 Heteroepitaxial high ScN fraction ScAlN -- 2.1 Introduction -- 2.2 MBE growth of high ScN fraction ScAlN -- 2.2.1 Substrate considerations -- 2.2.2 MBE growth conditions -- 2.2.3 Impact of nucleation layers -- 2.3 Stress in epitaxial ScAlN/SiC -- 2.4 Integration of ScAlN/SiC for ferroelectric applications -- References -- Chapter Two: Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications -- 1 Introduction -- 2 Molecular beam epitaxy -- 2.1 Phase purity control -- 2.2 Lattice polarity control -- 2.3 Impurity control -- 3 Material properties -- 3.1 Piezoelectricity -- 3.2 Ferroelectricity -- 3.3 Bandgap and band alignment -- 4 Emerging device applications -- 4.1 Ferroelectric transistors -- 4.2 Nonvolatile, programmable ferroelectric nitride memory -- 4.3 Photo detectors -- 4.4 Acoustic resonators -- 4.5 Nonlinear photonic devices -- 5 Summary -- Acknowledgments -- References -- Chapter Three: Structural and ferroelectric properties of Al1−xScxN -- 1 Introduction -- 2 Composition dependent structural properties -- 3 Growth mode dependent structural properties -- 4 On the ferroelectric properties of Al1−xScxN -- 4.1 Strain and stress -- 4.2 Leakage and band gap -- 4.3 Endurance -- 4.4 Thickness scaling -- 4.5 Epitaxy -- 4.6 Temperature and retention -- 5 Comparison of Al1−xScxN with other wurtzite-type ferroelectrics. |
| Beschreibung: | Description based on publisher supplied metadata and other sources |
| Beschreibung: | 1 Online-Ressource (xiii, 170 Seiten) |
| ISBN: | 9780443193910 |
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| 490 | 1 | |a Semiconductors and semimetals |v volume one hundred and fourteen | |
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| 520 | 3 | |a Front Cover -- Series Page -- Semiconductors and Semimetals -- Copyright -- Contents -- Contributors -- Preface -- Chapter One: Epitaxial ScAlN: Transistors through high ScN fraction thin films -- 1 ScAlN/GaN high-electron-mobility transistors -- 1.1 Introduction -- 1.2 Growth of ScAlN for HEMTs -- 1.2.1 MBE growth of ScAlN -- 1.3 ScAlN HEMT device design and performance -- 1.3.1 Interlayers -- 1.3.2 Dispersion and epitaxial capping layers -- 1.4 Ferroelectric transistors -- 2 Heteroepitaxial high ScN fraction ScAlN -- 2.1 Introduction -- 2.2 MBE growth of high ScN fraction ScAlN -- 2.2.1 Substrate considerations -- 2.2.2 MBE growth conditions -- 2.2.3 Impact of nucleation layers -- 2.3 Stress in epitaxial ScAlN/SiC -- 2.4 Integration of ScAlN/SiC for ferroelectric applications -- References -- Chapter Two: Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications -- 1 Introduction -- 2 Molecular beam epitaxy -- 2.1 Phase purity control -- 2.2 Lattice polarity control -- 2.3 Impurity control -- 3 Material properties -- 3.1 Piezoelectricity -- 3.2 Ferroelectricity -- 3.3 Bandgap and band alignment -- 4 Emerging device applications -- 4.1 Ferroelectric transistors -- 4.2 Nonvolatile, programmable ferroelectric nitride memory -- 4.3 Photo detectors -- 4.4 Acoustic resonators -- 4.5 Nonlinear photonic devices -- 5 Summary -- Acknowledgments -- References -- Chapter Three: Structural and ferroelectric properties of Al1−xScxN -- 1 Introduction -- 2 Composition dependent structural properties -- 3 Growth mode dependent structural properties -- 4 On the ferroelectric properties of Al1−xScxN -- 4.1 Strain and stress -- 4.2 Leakage and band gap -- 4.3 Endurance -- 4.4 Thickness scaling -- 4.5 Epitaxy -- 4.6 Temperature and retention -- 5 Comparison of Al1−xScxN with other wurtzite-type ferroelectrics. | |
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| id | DE-604.BV049569101 |
| illustrated | Not Illustrated |
| index_date | 2024-07-03T23:30:07Z |
| indexdate | 2025-01-10T17:14:00Z |
| institution | BVB |
| isbn | 9780443193910 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-034914339 |
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| series | Semiconductors and semimetals |
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| spelling | Emerging ferroelectric materials and devices edited by John Heron, Zetian Mi First edition Cambridge, MA Elsevier ; Academic Press 2023 1 Online-Ressource (xiii, 170 Seiten) txt rdacontent c rdamedia cr rdacarrier Semiconductors and semimetals volume one hundred and fourteen Description based on publisher supplied metadata and other sources Front Cover -- Series Page -- Semiconductors and Semimetals -- Copyright -- Contents -- Contributors -- Preface -- Chapter One: Epitaxial ScAlN: Transistors through high ScN fraction thin films -- 1 ScAlN/GaN high-electron-mobility transistors -- 1.1 Introduction -- 1.2 Growth of ScAlN for HEMTs -- 1.2.1 MBE growth of ScAlN -- 1.3 ScAlN HEMT device design and performance -- 1.3.1 Interlayers -- 1.3.2 Dispersion and epitaxial capping layers -- 1.4 Ferroelectric transistors -- 2 Heteroepitaxial high ScN fraction ScAlN -- 2.1 Introduction -- 2.2 MBE growth of high ScN fraction ScAlN -- 2.2.1 Substrate considerations -- 2.2.2 MBE growth conditions -- 2.2.3 Impact of nucleation layers -- 2.3 Stress in epitaxial ScAlN/SiC -- 2.4 Integration of ScAlN/SiC for ferroelectric applications -- References -- Chapter Two: Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications -- 1 Introduction -- 2 Molecular beam epitaxy -- 2.1 Phase purity control -- 2.2 Lattice polarity control -- 2.3 Impurity control -- 3 Material properties -- 3.1 Piezoelectricity -- 3.2 Ferroelectricity -- 3.3 Bandgap and band alignment -- 4 Emerging device applications -- 4.1 Ferroelectric transistors -- 4.2 Nonvolatile, programmable ferroelectric nitride memory -- 4.3 Photo detectors -- 4.4 Acoustic resonators -- 4.5 Nonlinear photonic devices -- 5 Summary -- Acknowledgments -- References -- Chapter Three: Structural and ferroelectric properties of Al1−xScxN -- 1 Introduction -- 2 Composition dependent structural properties -- 3 Growth mode dependent structural properties -- 4 On the ferroelectric properties of Al1−xScxN -- 4.1 Strain and stress -- 4.2 Leakage and band gap -- 4.3 Endurance -- 4.4 Thickness scaling -- 4.5 Epitaxy -- 4.6 Temperature and retention -- 5 Comparison of Al1−xScxN with other wurtzite-type ferroelectrics. Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Ferroelektrischer Halbleiter (DE-588)4154123-6 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 s Ferroelektrischer Halbleiter (DE-588)4154123-6 s Halbleiterbauelement (DE-588)4113826-0 s DE-604 Heron, John edt Mi, Zetian (DE-588)1132338557 edt Erscheint auch als Druck-Ausgabe 978-0-443-19390-3 Semiconductors and semimetals volume one hundred and fourteen (DE-604)BV042773169 114 https://www.sciencedirect.com/bookseries/semiconductors-and-semimetals/vol/114/suppl/C Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Emerging ferroelectric materials and devices Semiconductors and semimetals Halbleiterbauelement (DE-588)4113826-0 gnd Ferroelektrischer Halbleiter (DE-588)4154123-6 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4154123-6 (DE-588)4154121-2 |
| title | Emerging ferroelectric materials and devices |
| title_auth | Emerging ferroelectric materials and devices |
| title_exact_search | Emerging ferroelectric materials and devices |
| title_exact_search_txtP | Emerging ferroelectric materials and devices |
| title_full | Emerging ferroelectric materials and devices edited by John Heron, Zetian Mi |
| title_fullStr | Emerging ferroelectric materials and devices edited by John Heron, Zetian Mi |
| title_full_unstemmed | Emerging ferroelectric materials and devices edited by John Heron, Zetian Mi |
| title_short | Emerging ferroelectric materials and devices |
| title_sort | emerging ferroelectric materials and devices |
| topic | Halbleiterbauelement (DE-588)4113826-0 gnd Ferroelektrischer Halbleiter (DE-588)4154123-6 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| topic_facet | Halbleiterbauelement Ferroelektrischer Halbleiter Ferroelektrikum |
| url | https://www.sciencedirect.com/bookseries/semiconductors-and-semimetals/vol/114/suppl/C |
| volume_link | (DE-604)BV042773169 |
| work_keys_str_mv | AT heronjohn emergingferroelectricmaterialsanddevices AT mizetian emergingferroelectricmaterialsanddevices |