Semiconductor memory devices and circuits:
This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the bo...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boca Raton ; London ; New York
CRC Press, Taylor & Francis Group
2022
|
| Ausgabe: | First edition |
| Schlagworte: | |
| Zusammenfassung: | This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics.- Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor - Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array - Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array - Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET- Explores the new applications such as in-memory computing for AI hardware acceleration |
| Beschreibung: | 1. Semiconductor Memory Devices and Circuits. 2. SRAM. 3. DRAM. 4. FLASH Memory. 5. Emerging Non-volatile Memories |
| Beschreibung: | xv, 197 Seiten Illustrationen, Diagramme 435 gr |
| ISBN: | 9780367687076 9780367687151 |
Internformat
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| 520 | |a This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics.- Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor - Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array - Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array - Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET- Explores the new applications such as in-memory computing for AI hardware acceleration | ||
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Datensatz im Suchindex
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| id | DE-604.BV049566593 |
| illustrated | Illustrated |
| index_date | 2024-07-03T23:29:38Z |
| indexdate | 2024-07-20T07:24:20Z |
| institution | BVB |
| isbn | 9780367687076 9780367687151 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-034911880 |
| oclc_num | 1429568938 |
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| owner | DE-29T |
| owner_facet | DE-29T |
| physical | xv, 197 Seiten Illustrationen, Diagramme 435 gr |
| publishDate | 2022 |
| publishDateSearch | 2022 |
| publishDateSort | 2022 |
| publisher | CRC Press, Taylor & Francis Group |
| record_format | marc |
| spelling | Yu, Shimeng Verfasser (DE-588)1311269975 aut Semiconductor memory devices and circuits Shimeng Yu First edition Boca Raton ; London ; New York CRC Press, Taylor & Francis Group 2022 xv, 197 Seiten Illustrationen, Diagramme 435 gr txt rdacontent n rdamedia nc rdacarrier 1. Semiconductor Memory Devices and Circuits. 2. SRAM. 3. DRAM. 4. FLASH Memory. 5. Emerging Non-volatile Memories This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics.- Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor - Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array - Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array - Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET- Explores the new applications such as in-memory computing for AI hardware acceleration bicssc / Information technology - general issues bicssc / Environmental science, engineering & technology bicssc / Electrical engineering bicssc / Circuits & components bisacsh / COMPUTERS / Computer Engineering bisacsh / TECHNOLOGY & ENGINEERING / Electrical bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics Speicher Informatik (DE-588)4077653-0 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Halbleiterspeicher (DE-588)4120419-0 gnd rswk-swf Halbleiterspeicher (DE-588)4120419-0 s Integrierte Schaltung (DE-588)4027242-4 s Speicher Informatik (DE-588)4077653-0 s DE-604 Erscheint auch als Online-Ausgabe 978-1-003-13874-7 |
| spellingShingle | Yu, Shimeng Semiconductor memory devices and circuits bicssc / Information technology - general issues bicssc / Environmental science, engineering & technology bicssc / Electrical engineering bicssc / Circuits & components bisacsh / COMPUTERS / Computer Engineering bisacsh / TECHNOLOGY & ENGINEERING / Electrical bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics Speicher Informatik (DE-588)4077653-0 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Halbleiterspeicher (DE-588)4120419-0 gnd |
| subject_GND | (DE-588)4077653-0 (DE-588)4027242-4 (DE-588)4120419-0 |
| title | Semiconductor memory devices and circuits |
| title_auth | Semiconductor memory devices and circuits |
| title_exact_search | Semiconductor memory devices and circuits |
| title_exact_search_txtP | Semiconductor memory devices and circuits |
| title_full | Semiconductor memory devices and circuits Shimeng Yu |
| title_fullStr | Semiconductor memory devices and circuits Shimeng Yu |
| title_full_unstemmed | Semiconductor memory devices and circuits Shimeng Yu |
| title_short | Semiconductor memory devices and circuits |
| title_sort | semiconductor memory devices and circuits |
| topic | bicssc / Information technology - general issues bicssc / Environmental science, engineering & technology bicssc / Electrical engineering bicssc / Circuits & components bisacsh / COMPUTERS / Computer Engineering bisacsh / TECHNOLOGY & ENGINEERING / Electrical bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics Speicher Informatik (DE-588)4077653-0 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Halbleiterspeicher (DE-588)4120419-0 gnd |
| topic_facet | bicssc / Information technology - general issues bicssc / Environmental science, engineering & technology bicssc / Electrical engineering bicssc / Circuits & components bisacsh / COMPUTERS / Computer Engineering bisacsh / TECHNOLOGY & ENGINEERING / Electrical bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Circuits / General bisacsh / TECHNOLOGY & ENGINEERING / Electronics / Microelectronics Speicher Informatik Integrierte Schaltung Halbleiterspeicher |
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