Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Cottbus ; Senftenberg
2023
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| Schlagworte: | |
| Online-Zugang: | Volltext Volltext Volltext |
| Beschreibung: | xxvii, 140 Blätter Illustrationen, Diagramme |
| DOI: | 10.26127/BTUOpen-6557 |
Internformat
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Datensatz im Suchindex
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| spelling | Kalishettyhalli Mahadevaiah, Mamathamba Verfasser aut Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications vorgelegt von Mamathamba Kalishettyhalli Mahadevaiah Cottbus ; Senftenberg 2023 xxvii, 140 Blätter Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Brandenburgische Technische Universität Cottbus-Senftenberg 2023 Dispersion (DE-588)4012484-8 gnd rswk-swf Nichtflüchtiger Speicher (DE-588)4728810-3 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf Memristor (DE-588)1022027832 gnd rswk-swf Modellierung (DE-588)4170297-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content CMOS (DE-588)4010319-5 s Nichtflüchtiger Speicher (DE-588)4728810-3 s Memristor (DE-588)1022027832 s Modellierung (DE-588)4170297-9 s Dispersion (DE-588)4012484-8 s DE-604 Erscheint auch als Online-Ausgabe urn:nbn:de:kobv:co1-opus4-65571 https://opus4.kobv.de/opus4-btu/frontdoor/index/index/searchtype/latest/docId/6557/start/0/rows/10 Verlag kostenfrei Volltext https://doi.org/10.26127/BTUOpen-6557 Resolving-System kostenfrei Volltext https://nbn-resolving.org/urn:nbn:de:kobv:co1-opus4-65571 Resolving-System kostenfrei Volltext |
| spellingShingle | Kalishettyhalli Mahadevaiah, Mamathamba Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications Dispersion (DE-588)4012484-8 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd CMOS (DE-588)4010319-5 gnd Memristor (DE-588)1022027832 gnd Modellierung (DE-588)4170297-9 gnd |
| subject_GND | (DE-588)4012484-8 (DE-588)4728810-3 (DE-588)4010319-5 (DE-588)1022027832 (DE-588)4170297-9 (DE-588)4113937-9 |
| title | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications |
| title_auth | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications |
| title_exact_search | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications |
| title_exact_search_txtP | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications |
| title_full | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications vorgelegt von Mamathamba Kalishettyhalli Mahadevaiah |
| title_fullStr | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications vorgelegt von Mamathamba Kalishettyhalli Mahadevaiah |
| title_full_unstemmed | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications vorgelegt von Mamathamba Kalishettyhalli Mahadevaiah |
| title_short | Process development and electrical characterization of CMOS-integrated memristive devices for emerging non-volatile memory applications |
| title_sort | process development and electrical characterization of cmos integrated memristive devices for emerging non volatile memory applications |
| topic | Dispersion (DE-588)4012484-8 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd CMOS (DE-588)4010319-5 gnd Memristor (DE-588)1022027832 gnd Modellierung (DE-588)4170297-9 gnd |
| topic_facet | Dispersion Nichtflüchtiger Speicher CMOS Memristor Modellierung Hochschulschrift |
| url | https://opus4.kobv.de/opus4-btu/frontdoor/index/index/searchtype/latest/docId/6557/start/0/rows/10 https://doi.org/10.26127/BTUOpen-6557 https://nbn-resolving.org/urn:nbn:de:kobv:co1-opus4-65571 |
| work_keys_str_mv | AT kalishettyhallimahadevaiahmamathamba processdevelopmentandelectricalcharacterizationofcmosintegratedmemristivedevicesforemergingnonvolatilememoryapplications |