Front Cover -- Nanoelectronics: Physics, Materials, and Devices -- Copyright Page -- Contents -- List of contributors -- Preface -- 1 Basics concepts of device physics -- 1.1 Introduction -- 1.2 How electrons move -- 1.2.1 Atomic structure -- 1.3 Mobility of carriers -- 1.3.1 Scattering -- 1.4 Conce...

Ausführliche Beschreibung

Bibliographische Detailangaben

Weitere Verfasser:	Sarkar, Angsuman (HerausgeberIn), Sarkar, Chandan Kumar (HerausgeberIn), Deyasi, Arpan (HerausgeberIn), De, Debashis (HerausgeberIn), Benfdila, Arezki (HerausgeberIn)
Format:	Elektronisch E-Book
Sprache:	English
Veröffentlicht:	San Diego Elsevier 2023
Schriftenreihe:	Micro and Nano Technologies series
Schlagworte:	Electronic books
Online-Zugang:	DE-634 DE-1050 https://doi.org/10.1016/C2020-0-03814-4
Zusammenfassung:	Front Cover -- Nanoelectronics: Physics, Materials, and Devices -- Copyright Page -- Contents -- List of contributors -- Preface -- 1 Basics concepts of device physics -- 1.1 Introduction -- 1.2 How electrons move -- 1.2.1 Atomic structure -- 1.3 Mobility of carriers -- 1.3.1 Scattering -- 1.4 Concentration of carriers -- 1.5 Electric field -- References -- 2 Scaling the MOSFET: detrimental short channel effects and mitigation techniques -- 2.1 Introduction -- 2.2 Carrier velocity saturation -- 2.3 Channel charge sharing -- 2.3.1 Long channel devices -- 2.3.2 Short channel devices -- 2.4 Drain-induced barrier lowering -- 2.5 Punch-through -- 2.6 Hot carrier effect/hot carrier injection -- 2.7 Velocity overshoot -- 2.8 Gate-induced drain leakage -- 2.9 Direct source to drain tunneling -- 2.10 Mitigation of short channel effects -- 2.10.1 Gate engineering -- 2.10.2 Dual-material gate -- 2.10.2.1 Structure and operation -- 2.10.2.2 Challenges -- 2.10.3 Multigate FETs -- 2.10.3.1 Structure -- 2.10.3.2 Operation -- 2.10.3.3 Challenges -- 2.10.4 Channel engineering -- 2.10.4.1 Structure -- 2.10.4.2 Operation -- 2.10.4.3 Challenges -- 2.10.5 Buried oxide engineering -- 2.10.5.1 Ground plane FDSOI MOSFET -- 2.10.5.1.1 Structure and operation -- 2.10.6 Alternate conduction mechanism -- 2.10.6.1 Tunneling -- 2.10.6.2 Impact ionization -- 2.11 Conclusion -- References -- 3 Alternate device architectures to mitigate challenges -- 3.1 Introduction -- 3.2 Silicon on insulator and silicon on nothing concepts -- 3.2.1 Silicon on insulator -- 3.2.2 Silicon on nothing -- 3.3 Nonuniform doping and pocket engineering, halo doping, and reverse short channel effects -- 3.3.1 Nonuniform doping -- 3.3.2 Halo/pocket doping profile -- 3.3.3 Reverse short channel effect -- 3.4 Gate material engineering: dual material gate, triple material gate.
Beschreibung:	Description based on publisher supplied metadata and other sources
Beschreibung:	1 Online-Ressource (xx, 528 Seiten) Illustrationen, Diagramme
ISBN:	9780323918336
DOI:	10.1016/C2020-0-03814-4