Handbook of silicon carbide materials and devices:
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 c...
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boca Raton ; London ; New York
CRC Press
[2023]
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| Ausgabe: | First edition |
| Schriftenreihe: | Series in materials science and engineering
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| Schlagworte: | |
| Zusammenfassung: | This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. |
| Beschreibung: | xix, 444 Seiten Illustrationen, Diagramme |
| ISBN: | 9780367188269 9781032383576 |
Internformat
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| 520 | |a This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. | ||
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Datensatz im Suchindex
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| index_date | 2024-07-03T22:13:04Z |
| indexdate | 2024-07-10T09:52:54Z |
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| isbn | 9780367188269 9781032383576 |
| language | English |
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| physical | xix, 444 Seiten Illustrationen, Diagramme |
| publishDate | 2023 |
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| publisher | CRC Press |
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| series2 | Series in materials science and engineering |
| spelling | Handbook of silicon carbide materials and devices edited by Zhe Chuan Feng First edition Boca Raton ; London ; New York CRC Press [2023] xix, 444 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Series in materials science and engineering This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. (DE-588)4143413-4 Aufsatzsammlung gnd-content Feng, Zhe Chuan edt Erscheint auch als Online-Ausgabe 978-0-429-58395-7 |
| spellingShingle | Handbook of silicon carbide materials and devices |
| subject_GND | (DE-588)4143413-4 |
| title | Handbook of silicon carbide materials and devices |
| title_auth | Handbook of silicon carbide materials and devices |
| title_exact_search | Handbook of silicon carbide materials and devices |
| title_exact_search_txtP | Handbook of silicon carbide materials and devices |
| title_full | Handbook of silicon carbide materials and devices edited by Zhe Chuan Feng |
| title_fullStr | Handbook of silicon carbide materials and devices edited by Zhe Chuan Feng |
| title_full_unstemmed | Handbook of silicon carbide materials and devices edited by Zhe Chuan Feng |
| title_short | Handbook of silicon carbide materials and devices |
| title_sort | handbook of silicon carbide materials and devices |
| topic_facet | Aufsatzsammlung |
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