Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching
Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e. V.
August 2022
|
| Ausgabe: | 1. Auflage |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
Vol. 245 |
| Schlagworte: | |
| Beschreibung: | xi, 194 Seiten Illustrationen, Diagramme |
| ISBN: | 9783946379454 |
Internformat
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| physical | xi, 194 Seiten Illustrationen, Diagramme |
| publishDate | 2022 |
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| publisher | Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e. V. |
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| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Kraut, Max aut Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy Max Kraut 1. Auflage Garching Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e. V. August 2022 xi, 194 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology Vol. 245 Dissertation Technische Universität München 2022 (DE-588)4113937-9 Hochschulschrift gnd-content Stutzmann, Martin dgs Technische Universität München (DE-588)36241-4 dgg Selected topics of semiconductor physics and technology Vol. 245 (DE-604)BV011499438 245 |
| spellingShingle | Kraut, Max Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy Selected topics of semiconductor physics and technology |
| subject_GND | (DE-588)4113937-9 |
| title | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy |
| title_auth | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy |
| title_exact_search | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy |
| title_exact_search_txtP | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy |
| title_full | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy Max Kraut |
| title_fullStr | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy Max Kraut |
| title_full_unstemmed | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy Max Kraut |
| title_short | Optoelectronic Properties of GaN Nanostructures and Novel II-III Oxynitrides Grown by Molecular Beam Epitaxy |
| title_sort | optoelectronic properties of gan nanostructures and novel ii iii oxynitrides grown by molecular beam epitaxy |
| topic_facet | Hochschulschrift |
| volume_link | (DE-604)BV011499438 |
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