Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin
2021
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| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | xii, 194 Seiten Illustrationen, Diagramme |
| DOI: | 10.14279/depositonce-12458 |
Internformat
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| 245 | 1 | 0 | |a Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy |c vorgelegt von Pascal Robert Günter Farin, M. Sc. |
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Datensatz im Suchindex
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| indexdate | 2024-07-10T09:15:32Z |
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| physical | xii, 194 Seiten Illustrationen, Diagramme |
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| spelling | Farin, Pascal Robert Günter Verfasser (DE-588)1245871137 aut Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy vorgelegt von Pascal Robert Günter Farin, M. Sc. Berlin 2021 xii, 194 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Berlin 2021 Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Grenzfläche (DE-588)4021991-4 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Rastertunnelmikroskopie (DE-588)4252995-5 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Drei-Fünf-Halbleiter (DE-588)4150649-2 s Epitaxieschicht (DE-588)4152546-2 s Grenzfläche (DE-588)4021991-4 s Gitterbaufehler (DE-588)4125030-8 s Rastertunnelmikroskopie (DE-588)4252995-5 s DE-604 Erscheint auch als Online-Ausgabe 10.14279/depositonce-12458 (DE-604)BV047584538 https://doi.org/10.14279/depositonce-12458 Resolving-System kostenfrei Volltext |
| spellingShingle | Farin, Pascal Robert Günter Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy Epitaxieschicht (DE-588)4152546-2 gnd Grenzfläche (DE-588)4021991-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd Rastertunnelmikroskopie (DE-588)4252995-5 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4152546-2 (DE-588)4021991-4 (DE-588)4125030-8 (DE-588)4252995-5 (DE-588)4150649-2 (DE-588)4113937-9 |
| title | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy |
| title_auth | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy |
| title_exact_search | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy |
| title_exact_search_txtP | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy |
| title_full | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy vorgelegt von Pascal Robert Günter Farin, M. Sc. |
| title_fullStr | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy vorgelegt von Pascal Robert Günter Farin, M. Sc. |
| title_full_unstemmed | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy vorgelegt von Pascal Robert Günter Farin, M. Sc. |
| title_short | Structural and electronic properties of antiphase boundaries in III-V semiconductor layers on Si(001) investigated by two-side cross-sectional scanning tunneling microscopy |
| title_sort | structural and electronic properties of antiphase boundaries in iii v semiconductor layers on si 001 investigated by two side cross sectional scanning tunneling microscopy |
| topic | Epitaxieschicht (DE-588)4152546-2 gnd Grenzfläche (DE-588)4021991-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd Rastertunnelmikroskopie (DE-588)4252995-5 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Epitaxieschicht Grenzfläche Gitterbaufehler Rastertunnelmikroskopie Drei-Fünf-Halbleiter Hochschulschrift |
| url | https://doi.org/10.14279/depositonce-12458 |
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