III-nitrides light emitting diodes: technology and applications:
The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, s...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Singapore, Singapore
Springer
[2020]
[Beijing] Science Press |
| Schriftenreihe: | Springer series in materials science
Volume 306 |
| Schlagworte: | |
| Zusammenfassung: | The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book |
| Beschreibung: | Introduction.- Basic concept of light-emitting diodes.- Property and testing analysis of III-nitrides based light-emitting diodes.- Epitaxy growth of III-nitrides based light-emitting diodes.- Green and blue light-emitting diodes based on InGaN/GaN MQWs structure.- UV light-emitting diodes based on AlGaN MQWs structure.- Quantum efficiency promotion of III-nitrides based light-emitting diodes.- Chip process of III-nitrides based light-emitting diodes.- Packaging of III-nitrides based light-emitting diodes.- Reliability analysis of III-nitrides based light-emitting diodes.- Application of light-emitting diodes.- Novel technology of III-nitrides based light-emitting diodes.; |
| Beschreibung: | xix, 285 Seiten Illustrationen, Diagramme 474 grams |
| ISBN: | 9789811579516 |
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| 500 | |a Introduction.- Basic concept of light-emitting diodes.- Property and testing analysis of III-nitrides based light-emitting diodes.- Epitaxy growth of III-nitrides based light-emitting diodes.- Green and blue light-emitting diodes based on InGaN/GaN MQWs structure.- UV light-emitting diodes based on AlGaN MQWs structure.- Quantum efficiency promotion of III-nitrides based light-emitting diodes.- Chip process of III-nitrides based light-emitting diodes.- Packaging of III-nitrides based light-emitting diodes.- Reliability analysis of III-nitrides based light-emitting diodes.- Application of light-emitting diodes.- Novel technology of III-nitrides based light-emitting diodes.; | ||
| 520 | |a The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book | ||
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Optical materials | |
| 650 | 4 | |a Electronic materials | |
| 650 | 4 | |a Microwaves | |
| 650 | 4 | |a Optical engineering | |
| 650 | 4 | |a Lasers | |
| 650 | 4 | |a Photonics | |
| 650 | 4 | |a Physics | |
| 653 | |a Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik | ||
| 700 | 1 | |a Wang, Junxi |e Verfasser |4 aut | |
| 700 | 1 | |a Yi, Xiaoyan |e Verfasser |4 aut | |
| 700 | 1 | |a Liu, Zhiqiang |e Verfasser |4 aut | |
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| 830 | 0 | |a Springer series in materials science |v Volume 306 |w (DE-604)BV000683335 |9 306 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-032968454 | ||
Datensatz im Suchindex
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| author | Li, Jinmin Wang, Junxi Yi, Xiaoyan Liu, Zhiqiang |
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| author_role | aut aut aut aut |
| author_sort | Li, Jinmin |
| author_variant | j l jl j w jw x y xy z l zl |
| building | Verbundindex |
| bvnumber | BV047583107 |
| ctrlnum | (OCoLC)1225205001 (DE-599)BVBBV047583107 |
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| id | DE-604.BV047583107 |
| illustrated | Illustrated |
| index_date | 2024-07-03T18:33:46Z |
| indexdate | 2024-07-10T09:15:29Z |
| institution | BVB |
| isbn | 9789811579516 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032968454 |
| oclc_num | 1225205001 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | xix, 285 Seiten Illustrationen, Diagramme 474 grams |
| publishDate | 2020 |
| publishDateSearch | 2020 |
| publishDateSort | 2020 |
| publisher | Springer Science Press |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Li, Jinmin Verfasser (DE-588)1223992683 aut III-nitrides light emitting diodes: technology and applications Jinmin Li, Junxi Wang, Xiaoyan Yi [und 4 weitere] Singapore, Singapore Springer [2020] [Beijing] Science Press xix, 285 Seiten Illustrationen, Diagramme 474 grams txt rdacontent n rdamedia nc rdacarrier Springer series in materials science Volume 306 Introduction.- Basic concept of light-emitting diodes.- Property and testing analysis of III-nitrides based light-emitting diodes.- Epitaxy growth of III-nitrides based light-emitting diodes.- Green and blue light-emitting diodes based on InGaN/GaN MQWs structure.- UV light-emitting diodes based on AlGaN MQWs structure.- Quantum efficiency promotion of III-nitrides based light-emitting diodes.- Chip process of III-nitrides based light-emitting diodes.- Packaging of III-nitrides based light-emitting diodes.- Reliability analysis of III-nitrides based light-emitting diodes.- Application of light-emitting diodes.- Novel technology of III-nitrides based light-emitting diodes.; The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book Semiconductors Optical materials Electronic materials Microwaves Optical engineering Lasers Photonics Physics Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik Wang, Junxi Verfasser aut Yi, Xiaoyan Verfasser aut Liu, Zhiqiang Verfasser aut Erscheint auch als Online-Ausgabe 978-981-15-7949-3 Springer series in materials science Volume 306 (DE-604)BV000683335 306 |
| spellingShingle | Li, Jinmin Wang, Junxi Yi, Xiaoyan Liu, Zhiqiang III-nitrides light emitting diodes: technology and applications Springer series in materials science Semiconductors Optical materials Electronic materials Microwaves Optical engineering Lasers Photonics Physics |
| title | III-nitrides light emitting diodes: technology and applications |
| title_auth | III-nitrides light emitting diodes: technology and applications |
| title_exact_search | III-nitrides light emitting diodes: technology and applications |
| title_exact_search_txtP | III-nitrides light emitting diodes: technology and applications |
| title_full | III-nitrides light emitting diodes: technology and applications Jinmin Li, Junxi Wang, Xiaoyan Yi [und 4 weitere] |
| title_fullStr | III-nitrides light emitting diodes: technology and applications Jinmin Li, Junxi Wang, Xiaoyan Yi [und 4 weitere] |
| title_full_unstemmed | III-nitrides light emitting diodes: technology and applications Jinmin Li, Junxi Wang, Xiaoyan Yi [und 4 weitere] |
| title_short | III-nitrides light emitting diodes: technology and applications |
| title_sort | iii nitrides light emitting diodes technology and applications |
| topic | Semiconductors Optical materials Electronic materials Microwaves Optical engineering Lasers Photonics Physics |
| topic_facet | Semiconductors Optical materials Electronic materials Microwaves Optical engineering Lasers Photonics Physics |
| volume_link | (DE-604)BV000683335 |
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