Short circuit requirements of power converters based upon wide-bandgap semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Kassel, Hess
Kassel University Press
[2021]
|
| Schriftenreihe: | Elektrische Energiesysteme
20 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | xiv, 253 Seiten Illustrationen, Diagramme 21 cm x 14.8 cm |
| ISBN: | 9783737609777 3737609772 |
Internformat
MARC
| LEADER | 00000nam a22000008cb4500 | ||
|---|---|---|---|
| 001 | BV047512167 | ||
| 003 | DE-604 | ||
| 005 | 20220223 | ||
| 007 | t| | ||
| 008 | 211014s2021 gw a||| m||| 00||| eng d | ||
| 015 | |a 21,N40 |2 dnb | ||
| 016 | 7 | |a 1242284788 |2 DE-101 | |
| 020 | |a 9783737609777 |c : EUR 39.00 (DE), EUR 40.10 (AT) |9 978-3-7376-0977-7 | ||
| 020 | |a 3737609772 |9 3-7376-0977-2 | ||
| 024 | 3 | |a 9783737609777 | |
| 035 | |a (OCoLC)1302327117 | ||
| 035 | |a (DE-599)DNB1242284788 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-HE | ||
| 049 | |a DE-83 | ||
| 084 | |a ZN 8340 |0 (DE-625)157614: |2 rvk | ||
| 084 | |8 1\p |a 620 |2 23sdnb | ||
| 100 | 1 | |a Pappis, Douglas |e Verfasser |0 (DE-588)1248916484 |4 aut | |
| 245 | 1 | 0 | |a Short circuit requirements of power converters based upon wide-bandgap semiconductors |c Douglas Pappis |
| 264 | 1 | |a Kassel, Hess |b Kassel University Press |c [2021] | |
| 264 | 4 | |c © 2021 | |
| 300 | |a xiv, 253 Seiten |b Illustrationen, Diagramme |c 21 cm x 14.8 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 336 | |b sti |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Elektrische Energiesysteme |v 20 | |
| 502 | |b Dissertation |c Universität Kassel |d 2020 | ||
| 650 | 0 | 7 | |a Kurzschluss |0 (DE-588)4166241-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Funktionssicherheit |0 (DE-588)4760707-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Leistungselektronik |0 (DE-588)4035235-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Leistungshalbleiter |0 (DE-588)4167286-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
| 653 | |a GaN HEMT | ||
| 653 | |a Short Circuit | ||
| 653 | |a IGBT | ||
| 653 | |a SiC MOSFET | ||
| 653 | |a Power Semiconductors | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Leistungselektronik |0 (DE-588)4035235-3 |D s |
| 689 | 0 | 1 | |a Kurzschluss |0 (DE-588)4166241-6 |D s |
| 689 | 0 | 2 | |a Funktionssicherheit |0 (DE-588)4760707-5 |D s |
| 689 | 0 | 3 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 4 | |a Leistungshalbleiter |0 (DE-588)4167286-0 |D s |
| 689 | 0 | 5 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 830 | 0 | |a Elektrische Energiesysteme |v 20 |w (DE-604)BV037185707 |9 20 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032913027&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 883 | 1 | |8 1\p |a vlb |d 20211001 |q DE-101 |u https://d-nb.info/provenance/plan#vlb | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-032913027 | |
Datensatz im Suchindex
| _version_ | 1815695489118502912 |
|---|---|
| adam_text |
CONTENTS
1
INTRODUCTION
1
1.1
MOTIVATION
.
1
1.2
OVERVIEW
OF
SHORT
CIRCUIT
ON
ACTIVE
POWER
SEMICONDUCTORS
.
.
7
1.3
RESEARCH
OBJECTIVES
AND
APPROACHES
.
10
1.4
DISSERTATION
ORGANIZATION
.
10
2
SHORT
CIRCUIT
CAPABILITY
OF
LOW-VOLTAGE
IGBTS
13
2.1
OBJECTIVE
.
13
2.2
IGBT
SHORT
CIRCUIT:
STATE-OF-THE-ART
.
13
2.2.1
INTRODUCTION
.
13
2.2.2
FAILURE
MECHANISMS
.
14
2.2.3
EXCEEDING
THERMAL
LIMIT
.
17
2.2.4
ELECTRICAL
FAILURE
.
20
2.2.5
TYPES
OF
SHORT
CIRCUIT
FAULTS
.
23
2.2.6
IGBT
SAFE
OPERATION
AREA
(SOA)
.
29
2.2.7
MAXIMUM
SAFE
SHORT
CIRCUIT
TIME
UNDER
EXTREME
WORKING
CONDITIONS
.
30
2.3
EXPERIMENTAL
INVESTIGATION
.
32
2.3.1
TEST
SETUP
.
33
2.3.2
PERFORMED
MEASUREMENTS
AND
TESTS
.
35
2.4
CHAPTER
CONCLUSIONS
.
53
3
SHORT
CIRCUIT
CAPABILITY
OF
SIC
MOSFETS
55
3.1
OBJECTIVE
.
55
3.2
INTRODUCTION
.
55
3.3
OVERVIEW
OF
SHORT
CIRCUIT
ON
SIC
MOSFETS
.
57
3.4
EXPERIMENTAL
INVESTIGATION
.
60
3.4.1
TEST
SETUP
.
61
3.4.2
PLANAR
SIC
MOSFET
.
64
3.4.3
TRENCH
SIC
MOSFET
.
70
3.5
FAILURE
ANALYSIS
OF
THE
TESTED
SIC
MOSFETS
.
80
3.5.1
PERFORMANCE
OF
THE
TESTED
DEVICES
.
80
3.6
CHAPTER
CONCLUSION
.
97
4
SHORT
CIRCUIT
CAPABILITY
OF
GAN
DEVICES
99
4.1
OBJECTIVE
.
99
4.2
INTRODUCTION
.
99
4.3
OVERVIEW
OF
GAN
HEMT
.
101
4.4
SHORT
CIRCUIT
ON
GAN
HEMT
.
104
4.5
EXPERIMENTAL
INVESTIGATION
.
107
4.5.1
PERFORMED
TESTS
.
107
4.6
FAILURE
ANALYSIS
.
121
4.7
DISCUSSION
.
129
4.8
CHAPTER
CONCLUSIONS
.
131
5
SC
REQUIREMENTS
AND
PROTECTION
133
5.1
APPLICATION
REQUIREMENTS
.
133
5.2
SHORT
CIRCUIT
IN
VOLTAGE-SOURCE
INVERTERS
.
135
5.2.1
SHORT
CIRCUIT
ON
MULTILEVEL
INVERTERS
.
137
5.3
SC
DRIVER
REQUIREMENTS
.
139
5.4
PROTECTION
SCHEMES
.
140
5.4.1
SHUNT
RESISTOR
.
142
5.4.2
SOLID-STATE
CIRCUIT
BREAKER
.
143
5.4.3
DESATURATION
.
143
5.4.4
FAULT
CURRENT
EVALUATION
.
145
5.5
SOFT
TURN-OFF
.
147
5.6
DISCUSSION
.
149
5.7
CHAPTER
CONCLUSION
.
150
6
CONCLUSION
151
6.1
SUMMARY
.
151
6.2
FUTURE
WORK
.
154
APPENDICES
157
A
REPETITIVE
SHORT
CIRCUIT
TESTS
159
B
SIC
MOSFET
ELECTRO-THERMAL
SIMULATION
189
B.L
PHYSICAL
MODEL
.
190
B.2
SOLUTION
OF
THE
UNIDIMENSIONAL
HEAT
EQUATION
.
193
B.2.1
FIXED
BOUNDARY
CONDITION
.
193
B.2.
2
INSULATED
BOUNDARIES
.
201
B.2.
3
HEAT
SOURCE
.
203
B.2.
4
MATLAB
SCRIPT
.
206
C
DYNAMIC
MODEL
OF
THE
GAN
SHORT
CIRCUIT
215
REFERENCES
219 |
| adam_txt |
CONTENTS
1
INTRODUCTION
1
1.1
MOTIVATION
.
1
1.2
OVERVIEW
OF
SHORT
CIRCUIT
ON
ACTIVE
POWER
SEMICONDUCTORS
.
.
7
1.3
RESEARCH
OBJECTIVES
AND
APPROACHES
.
10
1.4
DISSERTATION
ORGANIZATION
.
10
2
SHORT
CIRCUIT
CAPABILITY
OF
LOW-VOLTAGE
IGBTS
13
2.1
OBJECTIVE
.
13
2.2
IGBT
SHORT
CIRCUIT:
STATE-OF-THE-ART
.
13
2.2.1
INTRODUCTION
.
13
2.2.2
FAILURE
MECHANISMS
.
14
2.2.3
EXCEEDING
THERMAL
LIMIT
.
17
2.2.4
ELECTRICAL
FAILURE
.
20
2.2.5
TYPES
OF
SHORT
CIRCUIT
FAULTS
.
23
2.2.6
IGBT
SAFE
OPERATION
AREA
(SOA)
.
29
2.2.7
MAXIMUM
SAFE
SHORT
CIRCUIT
TIME
UNDER
EXTREME
WORKING
CONDITIONS
.
30
2.3
EXPERIMENTAL
INVESTIGATION
.
32
2.3.1
TEST
SETUP
.
33
2.3.2
PERFORMED
MEASUREMENTS
AND
TESTS
.
35
2.4
CHAPTER
CONCLUSIONS
.
53
3
SHORT
CIRCUIT
CAPABILITY
OF
SIC
MOSFETS
55
3.1
OBJECTIVE
.
55
3.2
INTRODUCTION
.
55
3.3
OVERVIEW
OF
SHORT
CIRCUIT
ON
SIC
MOSFETS
.
57
3.4
EXPERIMENTAL
INVESTIGATION
.
60
3.4.1
TEST
SETUP
.
61
3.4.2
PLANAR
SIC
MOSFET
.
64
3.4.3
TRENCH
SIC
MOSFET
.
70
3.5
FAILURE
ANALYSIS
OF
THE
TESTED
SIC
MOSFETS
.
80
3.5.1
PERFORMANCE
OF
THE
TESTED
DEVICES
.
80
3.6
CHAPTER
CONCLUSION
.
97
4
SHORT
CIRCUIT
CAPABILITY
OF
GAN
DEVICES
99
4.1
OBJECTIVE
.
99
4.2
INTRODUCTION
.
99
4.3
OVERVIEW
OF
GAN
HEMT
.
101
4.4
SHORT
CIRCUIT
ON
GAN
HEMT
.
104
4.5
EXPERIMENTAL
INVESTIGATION
.
107
4.5.1
PERFORMED
TESTS
.
107
4.6
FAILURE
ANALYSIS
.
121
4.7
DISCUSSION
.
129
4.8
CHAPTER
CONCLUSIONS
.
131
5
SC
REQUIREMENTS
AND
PROTECTION
133
5.1
APPLICATION
REQUIREMENTS
.
133
5.2
SHORT
CIRCUIT
IN
VOLTAGE-SOURCE
INVERTERS
.
135
5.2.1
SHORT
CIRCUIT
ON
MULTILEVEL
INVERTERS
.
137
5.3
SC
DRIVER
REQUIREMENTS
.
139
5.4
PROTECTION
SCHEMES
.
140
5.4.1
SHUNT
RESISTOR
.
142
5.4.2
SOLID-STATE
CIRCUIT
BREAKER
.
143
5.4.3
DESATURATION
.
143
5.4.4
FAULT
CURRENT
EVALUATION
.
145
5.5
SOFT
TURN-OFF
.
147
5.6
DISCUSSION
.
149
5.7
CHAPTER
CONCLUSION
.
150
6
CONCLUSION
151
6.1
SUMMARY
.
151
6.2
FUTURE
WORK
.
154
APPENDICES
157
A
REPETITIVE
SHORT
CIRCUIT
TESTS
159
B
SIC
MOSFET
ELECTRO-THERMAL
SIMULATION
189
B.L
PHYSICAL
MODEL
.
190
B.2
SOLUTION
OF
THE
UNIDIMENSIONAL
HEAT
EQUATION
.
193
B.2.1
FIXED
BOUNDARY
CONDITION
.
193
B.2.
2
INSULATED
BOUNDARIES
.
201
B.2.
3
HEAT
SOURCE
.
203
B.2.
4
MATLAB
SCRIPT
.
206
C
DYNAMIC
MODEL
OF
THE
GAN
SHORT
CIRCUIT
215
REFERENCES
219 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Pappis, Douglas |
| author_GND | (DE-588)1248916484 |
| author_facet | Pappis, Douglas |
| author_role | aut |
| author_sort | Pappis, Douglas |
| author_variant | d p dp |
| building | Verbundindex |
| bvnumber | BV047512167 |
| classification_rvk | ZN 8340 |
| ctrlnum | (OCoLC)1302327117 (DE-599)DNB1242284788 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a22000008cb4500</leader><controlfield tag="001">BV047512167</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20220223</controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">211014s2021 gw a||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">21,N40</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1242284788</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783737609777</subfield><subfield code="c">: EUR 39.00 (DE), EUR 40.10 (AT)</subfield><subfield code="9">978-3-7376-0977-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3737609772</subfield><subfield code="9">3-7376-0977-2</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783737609777</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1302327117</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1242284788</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-HE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 8340</subfield><subfield code="0">(DE-625)157614:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="8">1\p</subfield><subfield code="a">620</subfield><subfield code="2">23sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Pappis, Douglas</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)1248916484</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Short circuit requirements of power converters based upon wide-bandgap semiconductors</subfield><subfield code="c">Douglas Pappis</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Kassel, Hess</subfield><subfield code="b">Kassel University Press</subfield><subfield code="c">[2021]</subfield></datafield><datafield tag="264" ind1=" " ind2="4"><subfield code="c">© 2021</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xiv, 253 Seiten</subfield><subfield code="b">Illustrationen, Diagramme</subfield><subfield code="c">21 cm x 14.8 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">sti</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Elektrische Energiesysteme</subfield><subfield code="v">20</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="b">Dissertation</subfield><subfield code="c">Universität Kassel</subfield><subfield code="d">2020</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kurzschluss</subfield><subfield code="0">(DE-588)4166241-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Funktionssicherheit</subfield><subfield code="0">(DE-588)4760707-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Leistungselektronik</subfield><subfield code="0">(DE-588)4035235-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Leistungshalbleiter</subfield><subfield code="0">(DE-588)4167286-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">GaN HEMT</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Short Circuit</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">IGBT</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">SiC MOSFET</subfield></datafield><datafield tag="653" ind1=" " ind2=" "><subfield code="a">Power Semiconductors</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Leistungselektronik</subfield><subfield code="0">(DE-588)4035235-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Kurzschluss</subfield><subfield code="0">(DE-588)4166241-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Funktionssicherheit</subfield><subfield code="0">(DE-588)4760707-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Leistungshalbleiter</subfield><subfield code="0">(DE-588)4167286-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Elektrische Energiesysteme</subfield><subfield code="v">20</subfield><subfield code="w">(DE-604)BV037185707</subfield><subfield code="9">20</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032913027&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">vlb</subfield><subfield code="d">20211001</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#vlb</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-032913027</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV047512167 |
| illustrated | Illustrated |
| index_date | 2024-07-03T18:22:16Z |
| indexdate | 2024-11-14T11:02:32Z |
| institution | BVB |
| isbn | 9783737609777 3737609772 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032913027 |
| oclc_num | 1302327117 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | xiv, 253 Seiten Illustrationen, Diagramme 21 cm x 14.8 cm |
| publishDate | 2021 |
| publishDateSearch | 2021 |
| publishDateSort | 2021 |
| publisher | Kassel University Press |
| record_format | marc |
| series | Elektrische Energiesysteme |
| series2 | Elektrische Energiesysteme |
| spelling | Pappis, Douglas Verfasser (DE-588)1248916484 aut Short circuit requirements of power converters based upon wide-bandgap semiconductors Douglas Pappis Kassel, Hess Kassel University Press [2021] © 2021 xiv, 253 Seiten Illustrationen, Diagramme 21 cm x 14.8 cm txt rdacontent sti rdacontent n rdamedia nc rdacarrier Elektrische Energiesysteme 20 Dissertation Universität Kassel 2020 Kurzschluss (DE-588)4166241-6 gnd rswk-swf Funktionssicherheit (DE-588)4760707-5 gnd rswk-swf Leistungselektronik (DE-588)4035235-3 gnd rswk-swf Leistungshalbleiter (DE-588)4167286-0 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf GaN HEMT Short Circuit IGBT SiC MOSFET Power Semiconductors (DE-588)4113937-9 Hochschulschrift gnd-content Leistungselektronik (DE-588)4035235-3 s Kurzschluss (DE-588)4166241-6 s Funktionssicherheit (DE-588)4760707-5 s MOS-FET (DE-588)4207266-9 s Leistungshalbleiter (DE-588)4167286-0 s Siliciumcarbid (DE-588)4055009-6 s DE-604 Elektrische Energiesysteme 20 (DE-604)BV037185707 20 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032913027&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p vlb 20211001 DE-101 https://d-nb.info/provenance/plan#vlb |
| spellingShingle | Pappis, Douglas Short circuit requirements of power converters based upon wide-bandgap semiconductors Elektrische Energiesysteme Kurzschluss (DE-588)4166241-6 gnd Funktionssicherheit (DE-588)4760707-5 gnd Leistungselektronik (DE-588)4035235-3 gnd Leistungshalbleiter (DE-588)4167286-0 gnd MOS-FET (DE-588)4207266-9 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4166241-6 (DE-588)4760707-5 (DE-588)4035235-3 (DE-588)4167286-0 (DE-588)4207266-9 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Short circuit requirements of power converters based upon wide-bandgap semiconductors |
| title_auth | Short circuit requirements of power converters based upon wide-bandgap semiconductors |
| title_exact_search | Short circuit requirements of power converters based upon wide-bandgap semiconductors |
| title_exact_search_txtP | Short circuit requirements of power converters based upon wide-bandgap semiconductors |
| title_full | Short circuit requirements of power converters based upon wide-bandgap semiconductors Douglas Pappis |
| title_fullStr | Short circuit requirements of power converters based upon wide-bandgap semiconductors Douglas Pappis |
| title_full_unstemmed | Short circuit requirements of power converters based upon wide-bandgap semiconductors Douglas Pappis |
| title_short | Short circuit requirements of power converters based upon wide-bandgap semiconductors |
| title_sort | short circuit requirements of power converters based upon wide bandgap semiconductors |
| topic | Kurzschluss (DE-588)4166241-6 gnd Funktionssicherheit (DE-588)4760707-5 gnd Leistungselektronik (DE-588)4035235-3 gnd Leistungshalbleiter (DE-588)4167286-0 gnd MOS-FET (DE-588)4207266-9 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Kurzschluss Funktionssicherheit Leistungselektronik Leistungshalbleiter MOS-FET Siliciumcarbid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032913027&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV037185707 |
| work_keys_str_mv | AT pappisdouglas shortcircuitrequirementsofpowerconvertersbaseduponwidebandgapsemiconductors |