Fabrication of GaAs Devices:
The following topics are dealt with: semiconductor properties, semiconductor growth, cleaning; passivation; dry etching; ohmic contacts; Schottky contacts; field effect transistors; heterojunction bipolar transistors; wet oxidation; optoelectronic device; and MIS GaAs device
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Stevenage
IET
2005
|
| Schriftenreihe: | Circuits, Devices and Systems
|
| Schlagworte: | |
| Online-Zugang: | UBY01 Volltext |
| Zusammenfassung: | The following topics are dealt with: semiconductor properties, semiconductor growth, cleaning; passivation; dry etching; ohmic contacts; Schottky contacts; field effect transistors; heterojunction bipolar transistors; wet oxidation; optoelectronic device; and MIS GaAs device |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9781849190688 |
| DOI: | 10.1049/PBEP006E |
Internformat
MARC
| LEADER | 00000nmm a22000001c 4500 | ||
|---|---|---|---|
| 001 | BV047493670 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 211004s2005 xxk|||| o||u| ||||||eng d | ||
| 020 | |a 9781849190688 |9 978-1-84919-068-8 | ||
| 035 | |a (ZDB-100-IET)978-1-84919-068-8 | ||
| 035 | |a (OCoLC)1277028200 | ||
| 035 | |a (DE-599)BVBBV047493670 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 044 | |a xxk |c XA-GB | ||
| 049 | |a DE-706 | ||
| 100 | 1 | |a Baca, Albert G. |e Verfasser |0 (DE-588)1080271015 |4 aut | |
| 245 | 1 | 0 | |a Fabrication of GaAs Devices |c A. Baca & C. Ashby |
| 264 | 1 | |a Stevenage |b IET |c 2005 | |
| 300 | |a 1 Online-Ressource | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Circuits, Devices and Systems | |
| 520 | 3 | |a The following topics are dealt with: semiconductor properties, semiconductor growth, cleaning; passivation; dry etching; ohmic contacts; Schottky contacts; field effect transistors; heterojunction bipolar transistors; wet oxidation; optoelectronic device; and MIS GaAs device | |
| 653 | 0 | |a Bipolar transistors | |
| 653 | 0 | |a Cleaning | |
| 653 | 0 | |a Crystal growth | |
| 653 | 0 | |a Diodes, Schottky-barrier | |
| 653 | 0 | |a Electronic apparatus and appliances | |
| 653 | 0 | |a Etching | |
| 653 | 0 | |a Gallium arsenide | |
| 653 | 0 | |a Heterojunctions | |
| 653 | 0 | |a Metal insulator semiconductors | |
| 653 | 0 | |a Ohmic contacts | |
| 653 | 0 | |a Optoelectronic devices | |
| 653 | 0 | |a Oxidation | |
| 653 | 0 | |a Semiconductors | |
| 653 | 0 | |a Semiconductors--Junctions | |
| 653 | 0 | |a Surface preparation | |
| 653 | 0 | |a etching | |
| 653 | 0 | |a gallium arsenide | |
| 653 | 0 | |a heterojunction bipolar transistors | |
| 653 | 0 | |a III-V semiconductors | |
| 653 | 0 | |a MIS devices | |
| 700 | 1 | |a Ashby, Carol Iris Hill |d 1953- |e Verfasser |0 (DE-588)172651409 |4 aut | |
| 776 | 0 | |z 9780863413537 | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 978-1-84919-068-8 |
| 856 | 4 | 0 | |u https://doi.org/10.1049/PBEP006E |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-100-IET | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-032894888 | ||
| 966 | e | |u https://doi.org/10.1049/PBEP006E |l UBY01 |p ZDB-100-IET |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804182820741971968 |
|---|---|
| adam_txt | |
| any_adam_object | |
| any_adam_object_boolean | |
| author | Baca, Albert G. Ashby, Carol Iris Hill 1953- |
| author_GND | (DE-588)1080271015 (DE-588)172651409 |
| author_facet | Baca, Albert G. Ashby, Carol Iris Hill 1953- |
| author_role | aut aut |
| author_sort | Baca, Albert G. |
| author_variant | a g b ag agb c i h a cih ciha |
| building | Verbundindex |
| bvnumber | BV047493670 |
| collection | ZDB-100-IET |
| ctrlnum | (ZDB-100-IET)978-1-84919-068-8 (OCoLC)1277028200 (DE-599)BVBBV047493670 |
| doi_str_mv | 10.1049/PBEP006E |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02223nmm a22006131c 4500</leader><controlfield tag="001">BV047493670</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">211004s2005 xxk|||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781849190688</subfield><subfield code="9">978-1-84919-068-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-100-IET)978-1-84919-068-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1277028200</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV047493670</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">xxk</subfield><subfield code="c">XA-GB</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Baca, Albert G.</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)1080271015</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication of GaAs Devices</subfield><subfield code="c">A. Baca & C. Ashby</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Stevenage</subfield><subfield code="b">IET</subfield><subfield code="c">2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Circuits, Devices and Systems</subfield></datafield><datafield tag="520" ind1="3" ind2=" "><subfield code="a">The following topics are dealt with: semiconductor properties, semiconductor growth, cleaning; passivation; dry etching; ohmic contacts; Schottky contacts; field effect transistors; heterojunction bipolar transistors; wet oxidation; optoelectronic device; and MIS GaAs device</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Bipolar transistors</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Cleaning</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Crystal growth</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Diodes, Schottky-barrier</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Electronic apparatus and appliances</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Etching</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Gallium arsenide</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Heterojunctions</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Metal insulator semiconductors</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Ohmic contacts</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Optoelectronic devices</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Oxidation</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Semiconductors--Junctions</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">Surface preparation</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">etching</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">gallium arsenide</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">heterojunction bipolar transistors</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">III-V semiconductors</subfield></datafield><datafield tag="653" ind1=" " ind2="0"><subfield code="a">MIS devices</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ashby, Carol Iris Hill</subfield><subfield code="d">1953-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)172651409</subfield><subfield code="4">aut</subfield></datafield><datafield tag="776" ind1="0" ind2=" "><subfield code="z">9780863413537</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">978-1-84919-068-8</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1049/PBEP006E</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-100-IET</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-032894888</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1049/PBEP006E</subfield><subfield code="l">UBY01</subfield><subfield code="p">ZDB-100-IET</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV047493670 |
| illustrated | Not Illustrated |
| index_date | 2024-07-03T18:16:15Z |
| indexdate | 2024-07-10T09:13:38Z |
| institution | BVB |
| isbn | 9781849190688 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032894888 |
| oclc_num | 1277028200 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | 1 Online-Ressource |
| psigel | ZDB-100-IET |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | IET |
| record_format | marc |
| series2 | Circuits, Devices and Systems |
| spelling | Baca, Albert G. Verfasser (DE-588)1080271015 aut Fabrication of GaAs Devices A. Baca & C. Ashby Stevenage IET 2005 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Circuits, Devices and Systems The following topics are dealt with: semiconductor properties, semiconductor growth, cleaning; passivation; dry etching; ohmic contacts; Schottky contacts; field effect transistors; heterojunction bipolar transistors; wet oxidation; optoelectronic device; and MIS GaAs device Bipolar transistors Cleaning Crystal growth Diodes, Schottky-barrier Electronic apparatus and appliances Etching Gallium arsenide Heterojunctions Metal insulator semiconductors Ohmic contacts Optoelectronic devices Oxidation Semiconductors Semiconductors--Junctions Surface preparation etching gallium arsenide heterojunction bipolar transistors III-V semiconductors MIS devices Ashby, Carol Iris Hill 1953- Verfasser (DE-588)172651409 aut 9780863413537 Erscheint auch als Druck-Ausgabe 978-1-84919-068-8 https://doi.org/10.1049/PBEP006E Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Baca, Albert G. Ashby, Carol Iris Hill 1953- Fabrication of GaAs Devices |
| title | Fabrication of GaAs Devices |
| title_auth | Fabrication of GaAs Devices |
| title_exact_search | Fabrication of GaAs Devices |
| title_exact_search_txtP | Fabrication of GaAs Devices |
| title_full | Fabrication of GaAs Devices A. Baca & C. Ashby |
| title_fullStr | Fabrication of GaAs Devices A. Baca & C. Ashby |
| title_full_unstemmed | Fabrication of GaAs Devices A. Baca & C. Ashby |
| title_short | Fabrication of GaAs Devices |
| title_sort | fabrication of gaas devices |
| url | https://doi.org/10.1049/PBEP006E |
| work_keys_str_mv | AT bacaalbertg fabricationofgaasdevices AT ashbycarolirishill fabricationofgaasdevices |