This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical...

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Bibliographic Details

Other Authors:	Maiti, Chinmay K. (Editor)
Format:	Electronic eBook
Language:	English
Published:	Stevenage IET 2001
Series:	IEE circuits, devices and systems series 12
Subjects:	Heterostruktur Silicium Chemical vapor deposition Electric resistance Energy levels (Quantum mechanics) Field-effect transistors Heterojunctions Molecular beam epitaxy Silicon chemical vapour deposition elemental semiconductors energy gap field effect transistors molecular beam epitaxial growth semiconductor heterojunctions silicon
Online Access:	UBY01 Volltext
Summary:	This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists
Physical Description:	1 Online-Ressource
ISBN:	9781849191678
DOI:	10.1049/PBCS012E